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I-200mm SiC substrate dummy grade 4H-N 8inch SiC wafer

I-200mm SiC substrate dummy grade 4H-N 8inch SiC wafer Umfanekiso obonisiweyo
  • I-200mm SiC substrate dummy grade 4H-N 8inch SiC wafer
  • I-200mm SiC substrate dummy grade 4H-N 8inch SiC wafer
  • I-200mm SiC substrate dummy grade 4H-N 8inch SiC wafer

Inkcazo emfutshane:

Isiseko se-silicon carbide esinobubanzi obuzii-intshi ezi-8 (malunga ne-200 mm). Isiseko se-silicon carbide (SiC) sisixhobo esibalulekileyo sokwenza izixhobo zamandla kunye nezixhobo ze-optoelectronic. Isiseko se-SiC esizii-intshi ezi-8 sisetyenziswa kakhulu ukuvelisa izixhobo ze-elektroniki ezinamandla aphezulu ezifana nee-MOSFET zamandla, ii-diode zamandla, kunye nezinye izixhobo zamandla ezinamandla aphezulu. Esi siseko sikhulu sinokuphucula ukusebenza kakuhle kwemveliso, sinciphise iindleko zokuvelisa, kwaye sincede ekwenzeni izixhobo ezinamandla ngakumbi. Izinto ze-silicon carbide zinomoya ogqithisileyo wokushisa, ukumelana nobushushu obuphezulu kunye nokumelana nemitha, okwenza kube lukhetho olufanelekileyo lokwenza izixhobo zamandla ezinamandla aphezulu.


Iimbonakalo

Ubunzima bobuchwephesha bokuveliswa kwe-substrate ye-SiC ye-8-intshi buquka:

1. Ukukhula kwekristale: Ukufikelela ekukhuleni kwekristale enye ekumgangatho ophezulu ye-silicon carbide ngobubanzi obukhulu kunokuba nzima ngenxa yokulawula iziphene kunye nokungcola.

2. Ukucubungula iWafer: Ubukhulu obukhulu beewafers eziziisentimitha ezi-8 buzisa imingeni ngokuhambelana kunye nolawulo lweziphene ngexesha lokucubungula iwafer, njengokupolisha, ukukrola, kunye nokufaka idosi.

3. Ukulingana kwezinto: Ukuqinisekisa ukuba izinto ziyafana kwaye ziyafana kuzo zonke izinto ezikwi-substrate ye-SiC eyi-8-intshi kufuna ubuchwephesha kwaye kufuna ulawulo oluchanekileyo ngexesha lenkqubo yokuvelisa.

4. Ixabiso: Ukwandisa ukuya kuthi ga kwi-8-intshi ze-SiC substrates ngelixa ugcina umgangatho ophezulu wezinto kunye nesivuno kunokuba nzima ngokwezoqoqosho ngenxa yobunzima kunye neendleko zeenkqubo zemveliso.

5. Ukujongana nale ngxaki yobuchwephesha kubalulekile ekusetyenzisweni ngokubanzi kwezixhobo ze-SiC ze-intshi ezi-8 kwizixhobo zamandla aphezulu kunye nezixhobo ze-optoelectronic.

Sinikezela ngee-substrates ze-sapphire ezivela kwiifektri ze-SiC ezithunyelwa ngaphandle eTshayina, kuquka iTankeblue. Iminyaka engaphezu kwe-10 ye-arhente isivumele ukuba sigcine ubudlelwane obusondeleyo nomzi-mveliso. Singakunika ii-substrates ze-6inch kunye ne-8inchSiC ozifunayo ukuze ufumane umbonelelo wexesha elide nozinzileyo, ngelixa sinikezela ngexabiso nexabiso elifanelekileyo.

I-Tankeblue lishishini lobuchwepheshe obuphezulu eligxile ekuphuhliseni, ekuveliseni nasekuthengiseni iitships ze-semiconductor silicon carbide (SiC) zesizukulwana sesithathu. Le nkampani yenye yezona nkampani ziphambili kwihlabathi jikelele ezivelisa ii-wafers ze-SiC.

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    Cofa u-enter ukuze uphendle okanye ucofe u-ESC ukuze uvale