I-200mm ye-SiC substrate ye-dummy grade 4H-N 8inch SiC wafer

200mm SiC substrate dummy ibakala 4H-N 8inch SiC wafer Featured Umfanekiso

Inkcazelo emfutshane:

I-Silicon carbide substrate kunye nobubanzi bee-intshi ezi-8 (malunga ne-200 mm). I-Silicon carbide (i-SiC) i-substrate yinto ebalulekileyo yokuvelisa izixhobo zamandla kunye nezixhobo ze-optoelectronic. Ii-8-intshi ze-SiC substrates ziqhele ukusetyenziselwa ukwenza izixhobo zombane eziphezulu zamandla ezifana nee-MOSFETs zamandla, ii-power diode, kunye nezinye izixhobo zombane ezisebenza kakhulu. Le substrate yobungakanani obukhulu inokuphucula ukusebenza kakuhle kwemveliso, ukunciphisa iindleko zokwenziwa, kunye nokunceda ukwenziwa kwezixhobo ezinamandla ngakumbi. Imathiriyeli ye-silicon ye-carbide ine-conductivity egqwesileyo ye-thermal, ukumelana nobushushu obuphezulu kunye nokumelana nemitha, iyenza ibe lolona khetho lufanelekileyo lokwenziwa kwezixhobo eziphezulu zokusebenza kwamandla.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ubunzima bobugcisa be-8-intshi yemveliso yeSiC substrate ibandakanya:

I-1.I-Crystal Ukukhula: Ukufezekisa ukukhula kwe-crystal eyodwa ye-silicon carbide kububanzi obukhulu kunokuba ngumngeni ngenxa yokulawulwa kweziphene kunye nokungcola.

I-2.I-Wafer Processing: Ubungakanani obukhulu bee-intshi ze-8-intshi zinika imingeni malunga nokufana kunye nokulawula isiphene ngexesha lokusetyenzwa kwe-wafer, njengokupholisa, ukubethelwa, kunye ne-doping.

I-3.I-Homogeneity yezinto eziphathekayo: Ukuqinisekisa iipropati eziphathekayo ezihambelanayo kunye ne-homogeneity kuyo yonke i-8-intshi ye-SiC substrate ifuna ngobuchule kwaye ifuna ulawulo oluchanekileyo ngexesha lenkqubo yokuvelisa.

I-4.Indleko: Ukulinganisa ukuya kwi-8-intshi ye-SiC substrates ngelixa ugcina umgangatho ophezulu wezinto eziphathekayo kunye nesivuno sinokuba ngumngeni wezoqoqosho ngenxa yobunzima kunye neendleko zeenkqubo zokuvelisa.

5.Ukujongana nale ngxaki yobugcisa kubalulekile ekuthotyweni ngokubanzi kwe-8-intshi ye-SiC substrates kumandla aphezulu kunye nezixhobo ze-optoelectronic.

Sinikezela ngeesapphire substrates ezivela kwiifektri zeSiC eziphambili zaseTshayina eziquka iTankeblue. Ngaphezulu kweminyaka eyi-10 ye-arhente iye yasivumela ukuba sigcine ubudlelwane obusondeleyo nomzi-mveliso. Singakunika i-6inch kunye ne-8inchSiC substrates ozifunayo ixesha elide kunye nobonelelo oluzinzileyo ngelixa unikezela ngexabiso elingcono kunye nexabiso.

I-Tankeblue lishishini lobuchwepheshe obuphezulu obukhethekileyo kuphuhliso, ukuveliswa kunye nokuthengiswa kweetshiphusi ze-semiconductor silicon carbide (SiC) zesizukulwana sesithathu. Inkampani yenye yezona zinto ziphambili ekuveliseni ii-wafers ze-SiC.