IiWafers zeSiC eziyi-2 intshi eziyi-6H okanye eziyi-4H eziziiSubstrates zeSiC eziziiDiameter eziyi-50.8mm

IiWafers zeSiC ezi-2 intshi eziyi-6H okanye eziyi-4H eziNciphisa i-SiC Substrates eziyi-Dia50.8mm Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-Silicon carbide (i-SiC) yi-binary compound yeQela IV-IV, yeyona compound eqinileyo ezinzileyo kwiQela IV lePeriodic Table of Elements, yi-semiconductor ebalulekileyo. I-SiC ineempawu ezibalaseleyo zobushushu, zoomatshini, zeekhemikhali kunye nezombane, ezenza ukuba ibe yenye yezona zinto zibalaseleyo zokwenza izixhobo ze-elektroniki ezishushu kakhulu, ezisebenza rhoqo, kunye nezinamandla aphezulu.

Thumela i-imeyile kuthi

Iimbonakalo

Ukusetyenziswa kwe-silicon carbide substrate

Isiseko se-silicon carbide sinokwahlulwa sibe luhlobo lokuqhuba kunye nohlobo oluncinci lokufaka ubushushu ngokwe-resistivity. Izixhobo ze-silicon carbide eziqhubayo zisetyenziswa kakhulu kwizithuthi zombane, ukuveliswa kwamandla e-photovoltaic, ukuthutha oololiwe, amaziko edatha, ukutshaja kunye nezinye iziseko zophuhliso. Ishishini lezithuthi zombane lifuna kakhulu ii-substrates ze-silicon carbide eziqhubayo, kwaye okwangoku, iTesla, iBYD, iNIO, iXiaopeng kunye nezinye iinkampani zezithuthi zamandla amatsha zicebe ukusebenzisa izixhobo okanye iimodyuli ze-silicon carbide discrete.

Izixhobo ze-silicon carbide ezifakwe i-semi-insulated zisetyenziswa kakhulu kunxibelelwano lwe-5G, unxibelelwano lwezithuthi, usetyenziso lokhuselo lwesizwe, ukuhanjiswa kwedatha, i-aerospace kunye nezinye iindawo. Ngokukhulisa umaleko we-gallium nitride epitaxial kwi-substrate ye-silicon carbide efakwe i-semi-insulated, i-wafer ye-epitaxial epitaxial esekwe kwi-silicon inokwenziwa ngakumbi ibe zizixhobo ze-microwave RF, ezisetyenziswa kakhulu kwicandelo le-RF, ezifana nee-amplifiers zamandla kunxibelelwano lwe-5G kunye nee-radio detectors kukhuselo lwesizwe.

Ukuveliswa kweemveliso ze-silicon carbide substrate kubandakanya uphuhliso lwezixhobo, ukwenziwa kwezinto eziluhlaza, ukukhula kwekristale, ukusika ikristale, ukucutshungulwa kwe-wafer, ukucoca nokuvavanya, kunye nezinye izinto ezininzi ezidityanisiweyo. Ngokuphathelele izinto eziluhlaza, imboni yeSongshan Boron ibonelela ngezixhobo eziluhlaza ze-silicon carbide kwimarike, kwaye ifikelele kwintengiso encinci. Izixhobo ze-semiconductor zesizukulwana sesithathu ezimelwe yi-silicon carbide zidlala indima ebalulekileyo kushishino lwanamhlanje, ngokukhawuleziswa kokungena kwezithuthi zamandla amatsha kunye nezicelo ze-photovoltaic, imfuno ye-silicon carbide substrate sele iza kungenisa indawo yokutshintsha.