Ii-intshi ezi-2 zeSiC Wafers 6H okanye 4H Semi-Insulating SiC Substrates Dia50.8mm

Inkcazelo emfutshane:

I-Silicon carbide (i-SiC) i-binary compound yeQela le-IV-IV, iyona kuphela i-compound eqinile eqinile kwiQela le-IV ye-Periodic Table of Elements, Yinto ebalulekileyo ye-semiconductor. I-SiC ineepropati ezintle kakhulu zokushisa, oomatshini, iikhemikhali kunye nombane, ezenza ukuba ibe yenye yezona zinto zibalaseleyo zokwenza izixhobo zombane eziphezulu, ubushushu obuphezulu, kunye nombane ophezulu.

Thumela i-imeyile kuthi

Iimbonakalo

Ukusetyenziswa kwe-silicon carbide substrate

I-Silicon carbide substrate inokwahlulwa ibe yintlobo ye-conductive kunye nohlobo lwe-semi-insulating ngokwe-resistivity. Izixhobo ze-silicon carbide ze-conductive zisetyenziswa kakhulu kwizithuthi zombane, ukuveliswa kwamandla e-photovoltaic, ukuhamba ngololiwe, amaziko edatha, ukutshaja kunye nezinye iziseko. Ishishini lemoto yombane linemfuno enkulu ye-silicon carbide substrates, kwaye okwangoku, iTesla, BYD, NIO, Xiaopeng kunye nezinye iinkampani zemoto zamandla amatsha zicwangcise ukusebenzisa izixhobo ze-silicon carbide discrete okanye iimodyuli.

Izixhobo ze-silicon carbide ze-semi-insulated zisetyenziswa kakhulu kwi-5G yonxibelelwano, unxibelelwano lwezithuthi, izicelo zokukhusela zelizwe, ukuhanjiswa kwedatha, i-aerospace kunye nezinye iinkalo. Ngokukhulisa umaleko we-gallium nitride epitaxial kwi-semi-insulated silicon carbide substrate, i-silicon-based gallium nitride epitaxial wafer inokwenziwa ngakumbi kwizixhobo ze-microwave RF, ezisetyenziswa kakhulu kwibala le-RF, njengezikhulisi zamandla kunxibelelwano lwe-5G kunye nezixhobo zerediyo kukhuselo lwesizwe.

Ukwenziwa kweemveliso ze-silicon carbide substrate kubandakanya uphuhliso lwezixhobo, ukuhlanganiswa kwemathiriyeli ekrwada, ukukhula kwekristale, ukusika ikristale, ukusetyenzwa kwe-wafer, ukucocwa kunye novavanyo, kunye namanye amakhonkco amaninzi. Ngokumalunga nezinto ezikrwada, ishishini le-Songshan Boron libonelela ngesilicon carbide izinto ezikrwada kwintengiso, kwaye liphumelele ibhetshi encinci yokuthengisa. Izixhobo ze-semiconductor zesizukulwana sesithathu ezimelwe yi-silicon carbide zidlala indima ephambili kwishishini langoku, kunye nokukhawuleza kokungena kwezithuthi zamandla amatsha kunye nezicelo ze-photovoltaic, imfuno ye-silicon carbide substrate sele iza kungenisa indawo yokungena.