I-intshi ye-12 ye-SiC Substrate N yoHlobo olukhulu Ubungakanani obuKhulu obuPhezulu bokusebenza kwe-RF yezicelo

I-intshi ye-12 ye-intshi ye-SiC Substrate N Uhlobo lobungakanani obukhulu obuPhezulu bokusebenza okuPhezulu kwe-RF Usetyenziso olubonakalisiweyo

Inkcazelo emfutshane:

I-12-intshi ye-SiC substrate imele ukuqhubela phambili kwe-teknoloji yezixhobo ze-semiconductor, inikezela ngeenzuzo zokuguqula amandla ombane kunye nezicelo eziphezulu ze-frequency. Njengeyona fomati inkulu ye-silicon carbide wafer kurhwebo ekhoyo, i-12-intshi ye-SiC substrate yenza uqoqosho olungazange lubonwe ngaphambili ngelixa ligcina izibonelelo zendalo zeempawu zebhendi ebanzi kunye neempawu ezikhethekileyo zobushushu. Xa kuthelekiswa nee-intshi ezi-6-intshi okanye iiwafa ezincinci ze-SiC, iqonga le-intshi ezili-12 lizisa ngaphezulu kwe-300% yendawo esebenzisekayo ngakumbi ngewafa nganye, inyusa ngokumangalisayo isivuno sokufa kunye nokunciphisa iindleko zokwenziwa kwezixhobo zombane. Olu tshintsho lobungakanani lubonisa inguquko yembali yee-silicone wafers, apho ukunyuka kwedayamitha nganye kwazisa ukucutha iindleko okubalulekileyo kunye nokuphuculwa komsebenzi. I-12-intshi ye-SiC substrate ephezulu ye-thermal conductivity (phantse i-3 × ye-silicon) kunye namandla aphezulu okuphazamiseka kwentsimi yenza ukuba kubaluleke kakhulu kwiinkqubo zezithuthi zombane ze-800V zesizukulwana esilandelayo, apho yenza ukuba iimodyuli zamandla ezihlangeneyo nezisebenzayo. Kwiziseko ezingundoqo ze-5G, isantya esiphezulu se-electron saturation sesixhobo sivumela izixhobo ze-RF ukuba zisebenze kumaza aphezulu ngelahleko ephantsi. Ukuhambelana kwe-substrate kunye nesixhobo sokwenza i-silicon elungisiweyo kwakhona kuququzelela ukwamkelwa okugudileyo ngamalaphu asele ekhona, nangona ukuphathwa okukhethekileyo kuyafuneka ngenxa yobunzima obugqithisileyo be-SiC (9.5 Mohs). Njengoko umthamo wemveliso usanda, i-12-intshi ye-SiC substrate ilindeleke ukuba ibe ngumgangatho weshishini wezicelo zamandla aphezulu, ukuqhuba izinto ezintsha kwiimoto, amandla avuselelekayo, kunye neenkqubo zokuguqula amandla oshishino.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iiparamitha zobugcisa

I-12 intshi yeSilicon Carbide (SiC) Inkcazo yeSubstrate
IBanga		Imveliso yeZeroMPD IBanga (Z Grade)	Imveliso esemgangathweni IBanga (P Grade)		IBanga leDummy (D Grade)
Ububanzi		3 0 0 mm~1305mm
Ukutyeba	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
I-Wafer Orientation		I-off axis : 4.0 ° ukuya ku- <1120 > ±0.5 ° ye-4H-N, Kwi-axis : <0001>±0.5 ° ye-4H-SI
Ukuxinana kweMibhobho	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukuxhathisa	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Ukuqhelaniswa neFlethi okuPhambili		{10-10} ±5.0°
Ubude beFlethi obuPhambili	4H-N	N / A
	4H-SI	Inotshi
Ukungabandakanywa kuMda		3 mm
LTV/TTV/Saphetha/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Uburhabaxa		IsiPolish Ra≤1 nm
		I-CMP Ra≤0.2 nm			Ra≤0.5 nm
I-Edge Cracks ngokuKhanya okuPhakamileyo Iipleyiti zeHex ngokuKhanya okuPhakamileyo Iindawo zePolytype NgokuKhanya okuPhakamileyo Ukubandakanywa kweCarbon ebonakalayo I-Silicon Surface Scratches ngokuKhanya okuPhakamileyo		Akukho nanye Indawo eyongezelekayo ≤0.05% Akukho nanye Indawo eyongezelekayo ≤0.05% Akukho nanye			Ubude obongezelekayo ≤ 20 mm, ubude obunye≤2 mm Indawo eyongezelekayo ≤0.1% Indawo eyongezelekayo≤3% Indawo eyongezelekayo ≤3% Ubude obongezelekayo≤1×i-wafer idayamitha
I-Edge Chips NgokuKhanya okuPhakamileyo		Akukho kuvunyelweyo ≥0.2mm ububanzi nobunzulu			I-7 ivunyelwe, ≤1 mm nganye
(TSD) Ukushenxiswa kwesikrufu somsonto		≤500 cm-2		N / A
(BPD) Isiseko sokuchithwa kwenqwelomoya		≤1000 cm-2		N / A
Ukungcoliswa komphezulu weSilicon ngokuKhanya okuPhakamileyo		Akukho nanye
Ukupakishwa		Multi-wafer Cassette Okanye Single Wafer Container
Amanqaku:
1 Imida yeziphene isebenza kuwo wonke umphezulu we-wafer ngaphandle kwendawo yokukhutshwa komphetho. 2Imikrwelo kufuneka ijongwe kuSi face kuphela. 3 Idatha yokususa isuka kwi-KOH etshisiweyo kuphela.

Ezona mpawu

1. I-Advantage yobungakanani obukhulu: I-12-intshi ye-SiC substrate (i-12-intshi ye-silicon carbide substrate) inika indawo enkulu ye-wafer enye, eyenza ukuba ii-chips ezininzi ziveliswe nge-wafer nganye, ngaloo ndlela ukunciphisa iindleko zokuvelisa kunye nokunyusa isivuno.
2. Izinto eziSebenzayo eziphezulu: I-silicon carbide ye-high-temperature resistance and high breakdown field field yenza i-substrate ye-12-intshi ilungele ukusetyenziswa kwe-voltage ephezulu kunye ne-high-frequency applications, njenge-EV inverters kunye neenkqubo zokutshaja ngokukhawuleza.
3. UkuPhathwa kokuPhathwa: Nangona ubunzima obuphezulu kunye nemingeni yokucubungula ye-SiC, i-substrate ye-SiC ye-intshi eyi-12 ifezekisa iziphene eziphantsi komhlaba ngokusebenzisa ubuchule bokusika kunye nokupolisha, ukuphucula isivuno sesixhobo.
4. Ulawulo oluPhezulu lwe-Thermal: Nge-conductivity engcono ye-thermal kunezinto ezisekelwe kwi-silicon, i-substrate ye-intshi eyi-12 ijongene ngokufanelekileyo nokutshatyalaliswa kobushushu kwizixhobo eziphezulu zamandla, ukwandisa ixesha lokuphila kwezixhobo.

Izicelo eziphambili

1. Izithuthi zoMbane: I-12-intshi ye-SiC substrate (i-12-intshi ye-silicon carbide substrate) yinxalenye ephambili yeenkqubo zokuqhuba umbane zesizukulwana esilandelayo, ezenza ukuba i-inverters ephezulu ephucula uluhlu kunye nokunciphisa ixesha lokutshaja.

2. Izitishi zeSiseko ze-5G: Ii-substrates ze-SiC ezinkulu zixhasa izixhobo ze-RF ze-high-frequency, ukuhlangabezana neemfuno zezikhululo ze-5G zamandla aphezulu kunye nokulahlekelwa okuphantsi.

I-3.Iimveliso zamandla amashishini: Kwii-inverters zelanga kunye ne-smart grids, i-substrate ye-intshi eyi-12 inokumelana ne-voltages ephezulu ngelixa inciphisa ukulahlekelwa kwamandla.

I-4.I-Electronics yoMthengi: Iitshaja ezikhawulezayo zexesha elizayo kunye nezixhobo zamandla eziko ledatha zinokuthatha i-12-intshi ye-SiC substrates ukuphumeza ubungakanani obudibeneyo kunye nokusebenza okuphezulu.

Iinkonzo ze-XKH

Sisebenza ngokukhethekileyo kwiinkonzo zokulungisa ezilungiselelwe i-12-intshi ye-SiC substrates (i-12-intshi ye-silicon carbide substrates), kuquka:
1. I-Dicing & Polishing: Umonakalo ophantsi, ukulungiswa kwe-substrate ephezulu ehambelana neemfuno zabathengi, ukuqinisekisa ukusebenza kwesixhobo esizinzileyo.
2. Inkxaso yokuKhula kwe-Epitaxial: Iinkonzo ze-epitaxial wafer ezikumgangatho ophezulu ukukhawulezisa ukuveliswa kwe-chip.
3. I-Small-Batch Prototyping: Ixhasa ukuqinisekiswa kwe-R&D kumaziko ophando kunye namashishini, kucuthwe imijikelo yophuhliso.
4. I-Technical Consulting: Izisombululo zokugqibela zokugqibela ukusuka ekukhethweni kwezinto eziphathekayo ukuya kwinkqubo yokuphucula, ukunceda abathengi ukuba banqobe imingeni yokucubungula i-SiC.
Nokuba yeyemveliso yobuninzi okanye uhlengahlengiso olukhethekileyo, iinkonzo zethu ze-SiC ze-12-intshi zihambelana neemfuno zeprojekthi yakho, zixhobisa ukuqhubela phambili kobuchwepheshe.