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I-wafer ye-12-intshi ye-4H-SiC yeeglasi ze-AR

I-wafer ye-4H-SiC ye-intshi ezili-12 yeeglasi ze-AR Umfanekiso obonisiweyo
  • I-wafer ye-12-intshi ye-4H-SiC yeeglasi ze-AR
  • I-wafer ye-12-intshi ye-4H-SiC yeeglasi ze-AR
  • I-wafer ye-12-intshi ye-4H-SiC yeeglasi ze-AR
  • I-wafer ye-12-intshi ye-4H-SiC yeeglasi ze-AR
  • I-wafer ye-12-intshi ye-4H-SiC yeeglasi ze-AR

Inkcazo emfutshane:

IIsiseko se-4H-SiC (i-silicon carbide) esine-intshi ezili-12 esiqhubayoyi-wafer ye-semiconductor enobubanzi obukhulu kakhulu, eyenzelwe isizukulwana esilandelayo.i-voltage ephezulu, amandla aphezulu, i-frequency ephezulu, kunye nobushushu obuphezuluukuvelisa amandla e-elektroniki. Ukusebenzisa iingenelo zangaphakathi ze-SiC—ezifanaintsimi yombane ebaluleke kakhulu, isantya esiphezulu sokukhukhuleka kwe-electron egcweleyo, ukuhanjiswa kobushushu obuphezulukunyeuzinzo oluhle kakhulu lweekhemikhali—le substrate ibekwe njengesixhobo esisisiseko samaqonga ezixhobo zamandla eziphambili kunye nezicelo ezintsha ze-wafer kwindawo enkulu.


Iimbonakalo

Umzobo oneenkcukacha

I-wafer ye-4H-SiC eyi-12-intshi
I-wafer ye-4H-SiC eyi-12-intshi

Isishwankathelo

IIsiseko se-4H-SiC (i-silicon carbide) esine-intshi ezili-12 esiqhubayoyi-wafer ye-semiconductor enobubanzi obukhulu kakhulu, eyenzelwe isizukulwana esilandelayo.i-voltage ephezulu, amandla aphezulu, i-frequency ephezulu, kunye nobushushu obuphezuluukuvelisa amandla e-elektroniki. Ukusebenzisa iingenelo zangaphakathi ze-SiC—ezifanaintsimi yombane ebaluleke kakhulu, isantya esiphezulu sokukhukhuleka kwe-electron egcweleyo, ukuhanjiswa kobushushu obuphezulukunyeuzinzo oluhle kakhulu lweekhemikhali—le substrate ibekwe njengesixhobo esisisiseko samaqonga ezixhobo zamandla eziphambili kunye nezicelo ezintsha ze-wafer kwindawo enkulu.

Ukujongana neemfuno zeshishini liphelaukunciphisa iindleko kunye nokuphucula imveliso, utshintsho oluvela kwi-mainstreamI-SiC eyi-6–8 intshi to I-SiC ye-intshi ezili-12ii-substrates ziyaziwa ngokubanzi njengendlela ephambili. I-wafer eyi-intshi ezili-12 inika indawo enkulu kakhulu enokusebenziseka kuneefomathi ezincinci, ivumela imveliso ephezulu ye-die nge-wafer nganye, ukusetyenziswa ngcono kwe-wafer, kunye nomlinganiselo oncitshisiweyo wokulahleka komda—ngaloo ndlela ixhasa ukulungiswa kweendleko zokuvelisa kulo lonke uthotho lokubonelela.

Indlela Yokukhulisa Ikristale kunye Nokwenziwa KweWafer

 

Le substrate ye-4H-SiC eqhubayo eyi-12-intshi iveliswa ngokugubungela inkqubo epheleleyo yeketangaukwandiswa kwembewu, ukukhula kwekristale enye, ukuqhekeka, ukuncitshiswa, kunye nokupolisha, ngokulandela iindlela eziqhelekileyo zokuvelisa ii-semiconductor:

 

  • Ukwandiswa kwembewu nge-Physical Vapor Transport (PVT):
    I-intshi ezili-12Ikristale yembewu ye-4H-SiCifumaneka ngokwandisa ububanzi besangqa kusetyenziswa indlela ye-PVT, nto leyo evumela ukukhula okulandelayo kweebhola ze-4H-SiC eziqhubayo eziyi-12-intshi.

  • Ukukhula kwekristale enye ye-4H-SiC eqhubayo:
    Ukuqhuban⁺ 4H-SiCukukhula kwekristale enye kufezekiswa ngokufaka initrogen kwindawo yokukhula ukuze kubonelelwe ngokulawulwa kwe-doping yabaxhasi.

  • Ukwenziwa kweWafer (ukulungiswa kwe-semiconductor eqhelekileyo):
    Emva kokubumba i-boule, ii-wafers zenziwa ngeukusika nge-laser, ilandelwe nguukuncitshiswa, ukupholisha (kubandakanya ukugqitywa kwinqanaba le-CMP), kunye nokucoca.
    Ubukhulu be-substrate obuvelayo buyi560 μm.

 

Le ndlela idibeneyo yenzelwe ukuxhasa ukukhula okuzinzileyo kwi-ultra-large diameter ngelixa igcina ukuthembeka kwekristale kunye neempawu zombane ezihambelanayo.

 

i-sic wafer 9

 

Ukuqinisekisa uvavanyo olupheleleyo lomgangatho, i-substrate ichazwa kusetyenziswa indibaniselwano yezixhobo zokuhlola izakhiwo, ezokukhanya, ezombane, kunye neziphene:

 

  • I-Raman spectroscopy (imephu yendawo):ukuqinisekiswa kokufana kwe-polytype kwi-wafer

  • I-microscopy ye-optical ezenzekelayo ngokupheleleyo (imephu ye-wafer):ukufunyanwa kunye novavanyo lwezibalo zee-micropipes

  • I-metrology yokumelana nokudibana kwezinto (imephu yewafer):ukusasazwa kokumelana kwiindawo ezininzi zokulinganisa

  • I-diffraction ye-X-ray enesisombululo esiphezulu (HRXRD):uvavanyo lomgangatho wekristale ngokusebenzisa imilinganiselo ye-rocking curve

  • Ukuhlolwa kokususwa kwendawo (emva kokugrumba okukhethiweyo):uvavanyo loxinano lwe-dislocation kunye ne-morphology (kugxininiswa ekukhutshweni kwezikrufu)

 

i-sic wafer 10

Iziphumo Zokusebenza Eziphambili (Ummeli)

Iziphumo zokuchazwa kweempawu zibonisa ukuba i-substrate ye-4H-SiC eqhubayo eyi-12-intshi ibonisa umgangatho oqinileyo wezinto ezibonakalayo kwiiparameter ezibalulekileyo:

(1) Ubunyulu kunye nokufana kwePolytype

  • Imephu yendawo yaseRaman ibonisaUgutyungelwe yi-100% 4H-SiC polytypengaphesheya kwesiseko.

  • Akukho kubandakanywa kwezinye iintlobo ze-polytype (umz., 6H okanye 15R) okufunyenweyo, nto leyo ebonisa ulawulo oluhle kakhulu lweentlobo ze-polytype kwisikali se-12-intshi.

(2) Uxinano lwee-micropipe (MPD)

  • Imephu ye-microscopy yesikali se-wafer ibonisauxinano lweemibhobho ezincinci < 0.01 cm⁻², ebonisa ukucinywa okusebenzayo kolu didi lweziphene ezithintela isixhobo.

(3) Ukumelana nombane kunye nokufana

  • Imephu yokumelana nokungachukumisi (umlinganiselo wamanqaku angama-361) ibonisa:

    • Uluhlu lokuxhathisa:20.5–23.6 mΩ·cm

    • Umlinganiselo wokuxhathisa:22.8 mΩ·cm

    • Ukungafaneki:< 2%
      Ezi ziphumo zibonisa ukuhambelana okuhle kokufakwa kwe-dopant kunye nokufana kombane okufanelekileyo kwe-wafer-scale.

(4) Umgangatho wekristale (HRXRD)

  • Ukulinganiswa kwegophe lokugoba le-HRXRD(004) ukubonakalisa, ithathwe kwiamanqaku amahlanukwicala elinobubanzi be-wafer, bonisa:

    • Iincochoyi ezinde, eziphantse zibe yi-symmetric ezingenayo indlela yokuziphatha ye-multi-peak, nto leyo ebonisa ukungabikho kweempawu zomda weenkozo ezisezantsi.

    • I-FWHM ephakathi:20.8 arcsec (″), ebonisa umgangatho ophezulu wekristale.

(5) Uxinano lwe-screw dislocation (TSD)

  • Emva kokukrola okukhethiweyo kunye nokuskena okuzenzakalelayo,uxinano lokuphuma kwesikrufuilinganiswa kwi2 cm⁻², ebonisa i-TSD ephantsi kwisikali se-12-intshi.

Isiphelo esivela kwiziphumo ezingasentla:
I-substrate ibonisaubumsulwa obugqwesileyo be-4H polytype, uxinano oluphantsi kakhulu lwe-micropipe, ukumelana okuzinzileyo nokulinganayo okuphantsi, umgangatho oqinileyo wekristale, kunye noxinano oluphantsi lwe-screw dislocation, ixhasa ukufaneleka kwayo kwimveliso yezixhobo eziphambili.

Ixabiso leMveliso kunye neeNzuzo

  • Ivumela ukufuduka kokwenziwa kweSiC ye-intshi ezili-12
    Ibonelela ngeqonga le-substrate elisemgangathweni ophezulu elihambelana nomgaqo-nkqubo weshishini lokuvelisa ii-wafer ze-SiC eziyi-12-intshi.

  • Uxinano oluphantsi lwesiphene ukuze kuphuculwe imveliso kunye nokuthembeka kwesixhobo
    Uxinano oluphantsi kakhulu lwemibhobho emincinci kunye noxinano oluphantsi lwezikrufu kunceda ekunciphiseni iindlela zokulahlekelwa yimveliso eziyingozi neziyi-parametric.

  • Ukufana kombane okugqwesileyo ukuze inkqubo izinze
    Ukusasazwa okuqinileyo kokumelana kuxhasa ukuphuculwa kokunamathelana kwewafer kunye nokuhambelana kwesixhobo ngaphakathi kwewafer.

  • Umgangatho ophezulu wekristale oxhasa i-epitaxy kunye nokucutshungulwa kwesixhobo
    Iziphumo ze-HRXRD kunye nokungabikho kweempawu zomda weenkozo ezisezantsi kubonisa umgangatho olungileyo wezinto ezisetyenziswa ekukhuleni kwe-epitaxial kunye nokwenziwa kwezixhobo.

 

Izicelo Ezijoliswe Kuzo

I-substrate ye-4H-SiC eqhubayo eyi-12-intshi iyasebenza kwezi:

  • Izixhobo zamandla zeSiC:IiMOSFET, iiSchottky barrier diodes (SBD), kunye nezakhiwo ezinxulumene noko

  • Izithuthi zombane:ii-inverters eziphambili zokudonsa, iitshaja ezikwibhodi (i-OBC), kunye nee-converters ze-DC-DC

  • Amandla ahlaziyekayo kunye negridi:ii-inverters ze-photovoltaic, iinkqubo zokugcina amandla, kunye neemodyuli zegridi ezikrelekrele

  • Izixhobo zombane zamandla zoshishino:izixhobo zamandla ezisebenzayo kakhulu, ii-motor drives, kunye nee-converters ze-high-voltage

  • Iimfuno ze-wafer ezinkulu ezivelayo:ukupakisha okuphucukileyo kunye nezinye iimeko zokwenziwa kwe-semiconductor ezihambelana ne-12 intshi

 

Imibuzo Ebuzwa Rhoqo – I-Substrate ye-4H-SiC eyi-12-Inch Conductive

Umbuzo 1. Loluphi uhlobo lwe-SiC substrate olu mveliso?

A:
Le mveliso yiI-substrate ye-4H-SiC ene-single-crystal eqhubayo eyi-12 intshi (n⁺-type), ekhuliswe ngendlela yePhysical Vapor Transport (PVT) kwaye isetyenzwa kusetyenziswa iindlela eziqhelekileyo ze-semiconductor wafering.

Umbuzo 2. Kutheni i-4H-SiC ikhethwa njenge-polytype?

A:
I-4H-SiC inikezela ngomxube olungileyo kakhulu weukuhamba okuphezulu kwee-electron, i-wide bandgap, intsimi yokuqhekeka okuphezulu, kunye nokuqhuba kobushushuphakathi kwee-polytypes zeSiC ezifanelekileyo kwezorhwebo. Yeyona polytype iphambili esetyenziselwaizixhobo zeSiC ezine-voltage ephezulu kunye namandla aphezulu, njengeeMOSFET kunye neeSchottky diodes.

Umbuzo 3. Zithini iingenelo zokusuka kwi-substrates ze-SiC eziyi-8-intshi ukuya kwi-12-intshi?

A:
I-wafer ye-SiC eyi-intshi ezili-12 inika oku kulandelayo:

  • Ngokubalulekileyoindawo enkulu enokusebenziseka

  • Imveliso ephezulu yokufa nge-wafer nganye

  • Umlinganiselo ophantsi wokulahlekelwa ngumda

  • Ukuhambelana okuphuculweyo kunyeimigca yokuvelisa ye-semiconductor ye-intshi ezili-12 ephucukileyo

Ezi zinto zinegalelo ngokuthe ngqoixabiso eliphantsi ngesixhobo ngasinyekunye nokusebenza kakuhle kwemveliso.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.

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