I-HPSI SiC Wafer ≥90% iBanga le-Optical Transmittance ye-AI/AR Glasses

Inkcazelo emfutshane:

Ipharamitha	IBanga	4-Intshi Substrate	6-Intshi Substrate
Ububanzi	IBanga le-Z / D	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Uhlobo lwePoly	IBanga le-Z / D	4H	4H
Ukutyeba	IBanga le-Z	500 μm ± 15 μm	500 μm ± 15 μm
Ukutyeba	D iBanga	500 μm ± 25 μm	500 μm ± 25 μm
I-Wafer Orientation	IBanga le-Z / D	Kwi-axis: <0001> ± 0.5 °	Kwi-axis: <0001> ± 0.5 °
Uxinzelelo lweMicropipe	IBanga le-Z	≤ 1cm²	≤ 1cm²
Uxinzelelo lweMicropipe	D iBanga	≤ 15cm²	≤ 15cm²
Ukuxhathisa	IBanga le-Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Ukuxhathisa	D iBanga	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm

Thumela i-imeyile kuthi

Iimbonakalo

Intshayelelo engundoqo: Indima ye-HPSI SiC Wafers kwiiglasi ze-AI/AR

I-HPSI (I-High-Purity Semi-Insulating) I-Silicon Carbide wafers ziziphaluka ezikhethekileyo eziphawulwa ngokumelana okuphezulu (>10⁹ Ω·cm) kunye noxinzelelo oluphantsi kakhulu lwesiphene. Kwiiglasi ze-AI / AR, ngokuyintloko zisebenza njengeyona nto iphambili ye-substrate lens ye-diffractive optical waveguide lens, ijongana neebhotile ezinxulunyaniswa nemathiriyeli yemveli ye-optical ngokwemiba yefom ebhityileyo kunye nokukhanya, ukuchithwa kobushushu, kunye nokusebenza kwamehlo. Umzekelo, iiglasi ze-AR zisebenzisa iilensi ze-SiC waveguide zinokufikelela kwindawo yokujonga ebanzi kakhulu (FOV) ye-70 ° -80 °, ngelixa inciphisa ubukhulu bomaleko welensi enye ukuya kwi-0.55mm kunye nobunzima ukuya kwi-2.7g nje, kuphucula kakhulu ukunxiba intuthuzelo kunye nokuntywiliselwa okubonakalayo.

b0968b8d-1b0f-4dfe-8fce-865d38404ba5_副本_副本

Iimpawu eziphambili: Indlela iSiC Material exhobisa ngayo i-AI/AR Glasses Design

Isalathiso esiPheleleyo esiPheleleyo esiPhezulu kunye nokuPhunyezwa koMsebenzi wokuSebenza

Isalathisi se-SiC's refractive index (2.6-2.7) siphantse sibe ngama-50% aphezulu kuneglasi yendabuko (1.8-2.0). Oku kuvumela ulwakhiwo oluncinci kunye olusebenzayo ngakumbi lwe-waveguide, ukwandisa kakhulu i-FOV. Isalathiso se-refractive ephezulu sikwanceda ukucinezela "isiphumo somnyama" esixhaphakileyo kwi-diffractive waveguides, ukuphucula ukucoceka komfanekiso.

Ubuchule bokuLawula iThermal

Nge-thermal conductivity ephezulu njenge-490 W/m·K (kufuphi naleyo yobhedu), i-SiC inokuphelisa ngokukhawuleza ubushushu obuveliswe ziimodyuli zokubonisa iMicro-LED. Oku kuthintela ukuthotywa kokusebenza okanye ukuguga kwesixhobo ngenxa yobushushu obuphezulu, ukuqinisekisa ubomi obude bebhetri kunye nokuzinza okuphezulu.

Amandla oomatshini kunye noKuhlala ixesha elide

I-SiC inobulukhuni be-Mohs obuyi-9.5 (yesibini kuphela kwidayimane), inika ukuxhathisa okungaqhelekanga kokukrweleka, oko kuyenza ilungele iiglasi ezisetyenziswa rhoqo. Uburhabaxa bayo bomphezulu bunokulawulwa ukuya kuRa <0.5 nm, kuqinisekisa ilahleko ephantsi kunye nokuhanjiswa kokukhanya okufanayo kwiindlela zamaza.

Ukuhambelana kwePropati yoMbane

Ukuxhathisa kwe-HPSI SiC (>10⁹ Ω·cm) inceda ukuthintela ukuphazamiseka kophawu. Inokuthi isebenze njengesixhobo esisebenzayo sesixhobo samandla, ikhulisa iimodyuli zolawulo lwamandla kwiiglasi ze-AR.

Imiyalelo yeSicelo esiPhambili

Amacandelo aMacho angundoqo we-AI/AR Glasses

IiLensi ze-Waveguide Diffractive: Ii-substrates ze-SiC zisetyenziselwa ukwenza i-ultra-thin optical waveguides exhasa i-FOV enkulu kunye nokupheliswa kwesiphumo somnyama.
Iipleyiti zeWindow kunye neePrisms: Ngokusikwa ngokwezifiso kunye nokupolisha, i-SiC inokucutshungulwa kwiifestile ezikhuselayo okanye iiprism ezibonakalayo kwiiglasi ze-AR, ukuphucula ukuhanjiswa kokukhanya kunye nokumelana nokunxiba.

Izicelo ezandisiweyo kweminye iMiba

I-Electronics yamandla: Isetyenziswa kwi-high-frequency, iimeko zamandla aphezulu njengeziguquli zemoto zamandla amatsha kunye nolawulo lweemoto zamashishini.
I-Quantum Optics: Isebenza njengenginginya kumaziko ombala, asetyenziswa kwii-substrates zonxibelelwano lwe-quantum kunye nezixhobo zokuva.

I-intshi ezi-4 kunye ne-6 ye-intshi ye-HPSI ye-SiC yeNkcazo yeNkcazelo yeNkcazo yoNcitho

Ipharamitha	IBanga	4-Intshi Substrate	6-Intshi Substrate
Ububanzi	IBanga le-Z / D	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Uhlobo lwePoly	IBanga le-Z / D	4H	4H
Ukutyeba	IBanga le-Z	500 μm ± 15 μm	500 μm ± 15 μm
Ukutyeba	D iBanga	500 μm ± 25 μm	500 μm ± 25 μm
I-Wafer Orientation	IBanga le-Z / D	Kwi-axis: <0001> ± 0.5 °	Kwi-axis: <0001> ± 0.5 °
Uxinzelelo lweMicropipe	IBanga le-Z	≤ 1cm²	≤ 1cm²
Uxinzelelo lweMicropipe	D iBanga	≤ 15cm²	≤ 15cm²
Ukuxhathisa	IBanga le-Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Ukuxhathisa	D iBanga	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm
Ukuqhelaniswa neFlat okuPhambili	IBanga le-Z / D	(10-10) ± 5.0 °	(10-10) ± 5.0 °
Ubude obuPhambili beFlathi	IBanga le-Z / D	32.5 mm ± 2.0 mm	Inotshi
Ubude beFlethi yesibini	IBanga le-Z / D	18.0 mm ± 2.0 mm	-
Ukukhutshwa kwe-Edge	IBanga le-Z / D	3 mm	3 mm
LTV / TTV / Isaphetha / Warp	IBanga le-Z	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm	≤ 2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm
LTV / TTV / Isaphetha / Warp	D iBanga	≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm	≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm
Uburhabaxa	IBanga le-Z	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm
Uburhabaxa	D iBanga	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm
Ii-Edge Cracks	D iBanga	Indawo eyongezelekayo ≤ 0.1%	Ubude obuqokelelweyo ≤ 20 mm, eyodwa ≤ 2 mm
Iindawo zePolytype	D iBanga	Indawo eyongezelekayo ≤ 0.3%	Indawo eyongezelekayo ≤ 3%
Ukubandakanywa kweCarbon ebonakalayo	IBanga le-Z	Indawo eyongezelekayo ≤ 0.05%	Indawo eyongezelekayo ≤ 0.05%
Ukubandakanywa kweCarbon ebonakalayo	D iBanga	Indawo eyongezelekayo ≤ 0.3%	Indawo eyongezelekayo ≤ 3%
Imikrwelo yoMphezulu weSilicon	D iBanga	I-5 ivunyelwe, nganye ≤1mm	Ubude obongezelekayo ≤ 1 x idayamitha
Ii-Edge chips	IBanga le-Z	Akukho kuvunyelweyo (ububanzi nobunzulu ≥0.2mm)	Akukho kuvunyelweyo (ububanzi nobunzulu ≥0.2mm)
Ii-Edge chips	D iBanga	I-7 ivunyelwe, nganye ≤1mm	I-7 ivunyelwe, nganye ≤1mm
Ukukhutshwa kwe-Screw Dislocation	IBanga le-Z	-	≤ 500 cm²
Ukupakisha	IBanga le-Z / D	Multi-wafer Cassette Okanye Single Wafer Container	Multi-wafer Cassette Okanye Single Wafer Container

Iinkonzo ze-XKH: ukuVelisa okuDityanisiweyo kunye neZakhono zokuLungisa

Inkampani ye-XKH inamandla okudibanisa ngokuthe nkqo ukusuka kwimathiriyeli ekrwada ukuya kwii-wafers ezigqityiweyo, ezigubungela lonke ikhonkco lokukhula kwe-SiC substrate, ukusika, ukupolisha, kunye nokusetyenzwa kwesiko. Iinzuzo eziphambili zenkonzo ziquka:

Ukwahluka kwezinto:Sinokubonelela ngeentlobo ezahlukeneyo ze-wafer ezifana nohlobo lwe-4H-N, uhlobo lwe-4H-HPSI, uhlobo lwe-4H / 6H-P, kunye nohlobo lwe-3C-N. Ukuxhathisa, ubukhulu, kunye nokuqhelaniswa kunokulungiswa ngokweemfuno.
.Ubungakanani obuguquguqukayo ngokwezifiso:Sixhasa ukusetyenzwa kwe-wafer ukusuka kwi-intshi ezi-2 ukuya kwi-12-intshi yedayamitha, kwaye singakwazi ukucubungula izakhiwo ezikhethekileyo njengeziqwenga zesikwere (umzekelo, 5x5mm, 10x10mm) kunye neeprism ezingaqhelekanga.
Ulawulo oluchanekileyo lweBanga lokuSebenza:I-Wafer Total Thickness Variation (TTV) inokugcinwa kwi-<1μm, kunye nobunzima bomhlaba kwi-Ra <0.3 nm, ukuhlangabezana neemfuno ze-nano-level flatness yezixhobo ze-waveguide.
Impendulo yeMarike eKhawulezayo:Imodeli yoshishino edibeneyo iqinisekisa utshintsho olusebenzayo ukusuka kwi-R & D ukuya kwimveliso yobuninzi, ukuxhasa yonke into ukusuka ekuqinisekisweni kwe-batch encinci ukuya kwiimpahla ezinkulu (ixesha lokukhokela ngokuqhelekileyo iintsuku ze-15-40).

FAQ ye-HPSI SiC Wafer

Q1: Kutheni i-HPSI SiC ithathwa njengesixhobo esifanelekileyo kwiilensi ze-AR waveguide?
I-A1: Isalathisi sayo esiphezulu se-refractive (2.6-2.7) senza ukuba kube lula, izakhiwo ze-waveguide ezisebenzayo ezixhasa indawo enkulu yokujonga (umzekelo, i-70 ° -80 °) ngelixa ususa "umphumela we-rainbow".
I-Q2: I-HPSI SiC iluphucula njani ulawulo lobushushu kwiiglasi ze-AI/AR?
I-A2: Nge-thermal conductivity ukuya kwi-490 W / m · K (kufuphi nobhedu), ikhupha ngokufanelekileyo ubushushu obuvela kumacandelo afana ne-Micro-LEDs, iqinisekisa ukusebenza okuzinzile kunye nexesha elide lesixhobo.
Q3: Zeziphi iingenelo zokuqina ezibonelelwa yi-HPSI SiC kwiindondo ezinxitywayo?
I-A3: Ukuqina kwayo okungaqhelekanga (i-Mohs 9.5) inika ukuxhathisa okuphezulu, okwenza kube yinto ehlala ixesha elide lokusetyenziswa kwansuku zonke kwiiglasi ze-AR zabathengi.