Ii-substrates ze-SiC ze-3 intshi ze-Dia76.2mm ze-HPSI Prime Research kunye ne-Dummy grade

I-substrate eqhubayo: ibhekisa kwi-resistivity ye-substrate ye-silicon carbide eyi-15~30mΩ-cm. I-wafer ye-silicon carbide epitaxial ekhuliswe kwi-substrate ye-silicon carbide eqhubayo inokwenziwa ngakumbi ibe zizixhobo zamandla, ezisetyenziswa kakhulu kwizithuthi zamandla ezintsha, ii-photovoltaics, ii-smart grids, kunye nezothutho lukaloliwe.

I-substrate engaphantsi kwe-insulation ibhekisa kwi-resistivity ephezulu kune-100000Ω-cm i-silicon carbide substrate, esetyenziswa kakhulu ekwenzeni izixhobo ze-gallium nitride microwave radio frequency, sisiseko sentsimi yonxibelelwano olungenazingcingo.

Yinto ebalulekileyo kwicandelo lonxibelelwano olungenazingcingo.

Izixhobo eziqhuba i-silicon carbide kunye nezithintela ubushushu obuphantsi zisetyenziswa kwiindidi ezahlukeneyo zezixhobo ze-elektroniki kunye nezixhobo zamandla, kuquka kodwa kungaphelelanga kwezi zilandelayo:

Izixhobo ze-semiconductor ezinamandla aphezulu (eziqhubayo): Ii-substrates ze-silicon carbide zinamandla amakhulu okuchithwa kwentsimi kunye nokuqhuba kobushushu, kwaye zifanelekile kwimveliso yee-transistors zamandla aphezulu kunye nee-diode kunye nezinye izixhobo.

Izixhobo ze-elektroniki ze-RF (ezifakwe i-semi-insulation): Ii-substrates zeSilicon Carbide zinesantya esiphezulu sokutshintsha kunye nokunyamezela amandla, zifanelekile kwizicelo ezinje ngee-RF power amplifier, izixhobo ze-microwave kunye nee-high frequency switches.

Izixhobo ze-Optoelectronic (ezifakwe i-semi-insulation): Ii-substrates ze-silicon carbide zinomahluko omkhulu wamandla kunye nozinzo oluphezulu lobushushu, zifanelekile ukwenza ii-photodiode, iiseli zelanga kunye nee-laser diode kunye nezinye izixhobo.

Izinzwa zobushushu (eziqhubayo): Ii-substrates ze-silicon carbide zinomoya ophezulu wokushisa kunye nozinzo lobushushu, zifanelekile ukuvelisa izinzwa zobushushu obuphezulu kunye nezixhobo zokulinganisa ubushushu.

Inkqubo yokuvelisa kunye nokusetyenziswa kwe-silicon carbide conductive kunye ne-semi-insulating substrates ineentlobo ngeentlobo zeentsimi kunye namathuba, okubonelela ngamathuba amatsha ophuhliso lwezixhobo ze-elektroniki kunye nezixhobo zamandla.