SiC silicon carbideisixhobo sibhekisa kwisixhobo esenziwe ngesilicon carbide njengemathiriyeli ekrwada.
Ngokweepropathi ezahlukeneyo zokuchasa, yahlulwe kwizixhobo zamandla ze-silicon carbide kunyei-semi-insulated silicon carbideizixhobo RF.
Iifom zesixhobo esiphambili kunye nokusetyenziswa kwe-silicon carbide
Iinzuzo eziphambili zeSiC ngaphezuluSi izixhobozezi:
I-SiC ine-gap ye-band ngamaxesha e-3 ye-Si, enokunciphisa ukuvuza kunye nokwandisa ukunyamezela kobushushu.
I-SiC inamaxesha ali-10 amandla entsimi ye-Si, inokuphucula ukuxinana kwangoku, i-frequency yokusebenza, ukumelana nomthamo wombane kunye nokunciphisa ilahleko ekucinyweni kwayo, ifaneleke ngakumbi kwizicelo zombane ophezulu.
I-SiC inesantya esiphindwe kabini se-electron saturation drift ye-Si, ngoko inokusebenza kwi-frequency ephezulu.
I-SiC inamaxesha ama-3 e-thermal conductivity ye-Si, ukusebenza okungcono kokuchithwa kobushushu, inokuxhasa ukuxinana kwamandla aphezulu kunye nokunciphisa iimfuno zokulahla ubushushu, ukwenza isixhobo sibe lula.
I-conductive substrate
I-conductive substrate: Ngokususa ukungcola okuhlukahlukeneyo kwikristale, ngokukodwa ukungcola kwinqanaba eliphantsi, ukufezekisa intrinsic high resistivity ye-crystal.
Iyaqhubai-silicon carbide substrateIqhekeza leSiC
Isixhobo samandla se-silicon carbide esiqhutywayo kukukhula kwe-silicon carbide epitaxial layer kwi-conductive substrate, i-silicon carbide epitaxial sheet iqhutyelwa phambili, kubandakanywa nokuveliswa kwee-Schottky diodes, i-MOSFET, i-IGBT, njl., isetyenziswa ikakhulu kwizithuthi zombane, amandla e-photovoltaic. ukuveliswa, ukuhamba ngololiwe, iziko ledatha, ukutshaja kunye nezinye iziseko. Iinzuzo zokusebenza zezi zilandelayo:
Iimpawu eziphuculweyo zoxinzelelo oluphezulu. Amandla ombane ophukileyo we-silicon carbide angaphezulu kwe-10 amaxesha e-silicon, okwenza ukuba uxinzelelo oluphezulu lwezixhobo ze-silicon carbide lube phezulu kakhulu kunolo lwezixhobo ze-silicon ezifanayo.
Iimpawu ezingcono zobushushu obuphezulu. I-Silicon carbide inomgangatho ophezulu we-thermal conductivity kune-silicon, eyenza ukutshatyalaliswa kobushushu besixhobo kube lula kunye nomda wokushisa osebenzayo ophezulu. Ukumelana nokushisa okuphezulu kunokukhokelela ekunyuseni okukhulu koxinzelelo lwamandla, ngelixa ukunciphisa iimfuno kwinkqubo yokupholisa, ukwenzela ukuba i-terminal ibe yinto elula kwaye i-miniaturized.
Ukusetyenziswa kwamandla aphantsi. ① Isixhobo seSilicon carbide sinokuxhathisa okuphantsi kakhulu kunye nelahleko ephantsi; (2) Ukuvuza kwangoku kwezixhobo ze-silicon carbide kuncitshiswe kakhulu kunezixhobo ze-silicon, ngaloo ndlela kunciphisa ukulahleka kwamandla; ③ Akukho nto yangoku yomsila kwinkqubo yokucima izixhobo ze-silicon carbide, kwaye ilahleko yokutshintsha iphantsi, ephucula kakhulu ukutshintshela ukuphindaphinda kwezicelo eziphathekayo.
I-Semi-insulated SiC substrate
I-Semi-insulated SiC substrate: I-N doping isetyenziselwa ukulawula ngokuchanekileyo ukuxhathisa kweemveliso zokuqhuba ngokulinganisa ubudlelwane obuhambelanayo phakathi koxinaniso lwe-nitrogen doping, izinga lokukhula kunye ne-crystal resistivity.
Ukucoceka okuphezulu kwe-semi-insulating substrate material
Izixhobo ze-RF ezisekwe kwi-silicon ye-semi-insulated zenziwa ngokukhula kwe-gallium nitride epitaxial layer kwi-semi-insulated silicon carbide substrate ukulungiselela i-silicon nitride epitaxial sheet, kuquka i-HEMT kunye nezinye izixhobo ze-gallium nitride RF, ezisetyenziswa ikakhulu kunxibelelwano lwe-5G, unxibelelwano lwezithuthi. izicelo zokukhusela, ukuhanjiswa kwedatha, i-aerospace.
Izinga lokukhukuliseka kwe-electron ye-silicon carbide kunye ne-gallium nitride yemathiriyeli yi-2.0 kunye ne-2.5 yamaxesha e-silicon ngokulandelelana, ngoko ke ukusebenza rhoqo kwe-silicon carbide kunye nezixhobo ze-gallium nitride zikhulu kunezixhobo ze-silicon zendabuko. Nangona kunjalo, izinto ze-gallium nitride zinobugwenxa bokungaxhathisi ubushushu, ngelixa i-silicon carbide inokumelana nobushushu obuhle kunye ne-thermal conductivity, enokuthi yenzele ukunganyangeki kobushushu bezixhobo ze-gallium nitride, ngoko ke ishishini lithatha i-silicon carbide njenge-substrate. , kunye ne-gan epitaxial layer ikhuliswe kwi-silicon carbide substrate ukwenza izixhobo ze-RF.
Ukuba kukho ulwaphulo-mthetho, cima uqhagamshelwano
Ixesha lokuposa: Jul-16-2024