I-SiC silicon carbideisixhobo sibhekisa kwisixhobo esenziwe nge-silicon carbide njengezinto eziluhlaza.
Ngokweempawu ezahlukeneyo zokuxhathisa, yahlulwe yaba zizixhobo zamandla ze-silicon carbide eziqhubayo kunyei-silicon carbide engagqunywanga kakhuluIzixhobo zeRF.
Iifom zezixhobo eziphambili kunye nokusetyenziswa kwe-silicon carbide
Iingenelo eziphambili zeSiC ngaphezuluIzinto zeSizezi:
I-SiC ine-band gap ephindwe kathathu kune-Si, enokunciphisa ukuvuza nokunyusa ukunyamezela ubushushu.
I-SiC inamandla entsimi yokuqhekeka aphindwe kalishumi kune-Si, inokuphucula uxinano lwangoku, imvamisa yokusebenza, imelane nomthamo we-voltage kwaye inciphise ilahleko yokuvula, ifaneleke ngakumbi kwiisetyenziso ze-voltage ephezulu.
I-SiC inesantya sokukhukhula kwe-electron saturation esiphindwe kabini kune-Si, ngoko ke inokusebenza kwisantya esiphezulu.
I-SiC inokuqhuba ubushushu okuphindwe kathathu kune-Si, ingcono ekusebenzeni kokusasaza ubushushu, inokuxhasa uxinano lwamandla aphezulu kwaye inciphise iimfuno zokusasaza ubushushu, nto leyo eyenza isixhobo sibe lula.
Isiseko esiqhubayo
I-substrate eqhubayo: Ngokususa ukungcola okwahlukeneyo kwikristale, ingakumbi ukungcola okungajulileyo, ukuze kufezekiswe ukuxhathisa okuphezulu kwekristale.
Ukuqhubaisiseko se-silicon carbideI-SiC wafer
Isixhobo samandla se-silicon carbide esiqhubayo sikhula ngokukhula komaleko we-silicon carbide epitaxial kwi-substrate eqhubayo, iphepha le-silicon carbide epitaxial liyacutshungulwa ngakumbi, kubandakanya ukuveliswa kwee-diode zeSchottky, i-MOSFET, i-IGBT, njl.njl., ezisetyenziswa kakhulu kwizithuthi zombane, ukuveliswa kombane we-photovoltaic, ukuhanjiswa koololiwe, iziko ledatha, ukutshaja kunye nezinye izibonelelo. Iingenelo zokusebenza zezi zilandelayo:
Iimpawu zoxinzelelo oluphezulu eziphuculweyo. Amandla ombane aqhekekileyo e-silicon carbide angaphezulu kwe-10 kunawe-silicon, nto leyo eyenza ukumelana noxinzelelo oluphezulu kwezixhobo ze-silicon carbide kuphakame kakhulu kunokwezixhobo ze-silicon ezifanayo.
Iimpawu ezingcono zobushushu obuphezulu. I-silicon carbide inomoya ophezulu wokushisa kune-silicon, nto leyo eyenza ubushushu besixhobo bube lula kwaye ubushushu obusebenzayo bube phezulu. Ukumelana nobushushu obuphezulu kunokukhokelela ekwandeni okukhulu koxinano lwamandla, ngelixa kunciphisa iimfuno kwinkqubo yokupholisa, ukuze i-terminal ibe lula kwaye ibe ncinci.
Ukusetyenziswa kwamandla okuphantsi. ① Isixhobo se-silicon carbide sinokumelana okuphantsi kakhulu kunye nokulahleka okuphantsi; (2) Ukuvuza komsinga wezixhobo ze-silicon carbide kuncitshiswe kakhulu kunezixhobo ze-silicon, ngaloo ndlela kunciphisa ukulahleka kwamandla; ③ Akukho nto ikhoyo ngoku kwinkqubo yokucima izixhobo ze-silicon carbide, kwaye ukulahleka kokutshintsha kuphantsi, nto leyo ephucula kakhulu ukuphindaphinda kokusetyenziswa okusebenzayo.
I-substrate ye-SiC engagqunywanga ngokupheleleyo
I-substrate ye-SiC engagqunywanga kakhulu: I-N doping isetyenziselwa ukulawula ngokuchanekileyo ukuxhathisa kweemveliso eziqhuba ngokulinganisa ubudlelwane obuhambelanayo phakathi koxinzelelo lwe-nitrogen doping, izinga lokukhula kunye nokuxhathisa kwekristale.
Izinto ze-substrate ezicocekileyo kakhulu
Izixhobo zeRF ezisekelwe kwikhabhoni yesilicon ezisekelwe kwikhabhoni zenziwa ngakumbi ngokukhulisa umaleko we-epitaxial we-gallium nitride kwi-substrate ye-silicon carbide engaphantsi kwe-insulated ukulungiselela iphepha le-epitaxial le-silicon nitride, kuquka i-HEMT kunye nezinye izixhobo ze-RF ze-gallium nitride, ezisetyenziswa kakhulu kunxibelelwano lwe-5G, unxibelelwano lwezithuthi, usetyenziso lokhuselo, ukuhanjiswa kwedatha, kunye ne-aerospace.
Izinga lokukhukhuleka kwe-electron eyomeleleyo yezinto ze-silicon carbide kunye ne-gallium nitride liphindwe kayi-2.0 kunye ne-2.5 kune-silicon ngokulandelelana, ngoko ke i-frequency yokusebenza kwezixhobo ze-silicon carbide kunye ne-gallium nitride inkulu kunezo zezixhobo ze-silicon zemveli. Nangona kunjalo, izinto ze-gallium nitride zinengxaki yokuxhathisa ubushushu kakubi, ngelixa i-silicon carbide inokumelana okuhle nobushushu kunye nokuqhuba ubushushu, okunokulungisa ukuxhathisa ubushushu kakubi kwezixhobo ze-gallium nitride, ngoko ke ishishini lithatha i-silicon carbide e-semi-insulated njenge-substrate, kwaye umaleko we-gan epitaxial ukhuliswa kwi-substrate ye-silicon carbide ukwenza izixhobo ze-RF.
Ukuba kukho ukwaphulwa komthetho, qhagamshelana nathi ucime
Ixesha leposi: Julayi-16-2024