Ii-wafers ze-SiC zi-semiconductors ezenziwe kwi-silicon carbide.Esi sixhobo saphuhliswa kwi-1893 kwaye ifanelekile kwiintlobo ezahlukeneyo zezicelo.Ngokukodwa ezifanelekileyo kwi-Schottky diodes, i-junction barrier Schottky diodes, iiswitshi kunye ne-metal-oxide-semiconductor field-effect transistors.Ngenxa yokuqina kwayo okuphezulu, lolona khetho lubalaseleyo kumacandelo ombane ombane.
Okwangoku, zimbini iindidi eziphambili zeewafers zeSiC.Eyokuqala sisilutyana esikhazimlisiweyo, esisiqhekeza esinye se-silicon carbide.Yenziwe ngokucoceka okuphezulu kweekristale zeSiC kwaye ingaba yi-100mm okanye i-150mm ububanzi.Isetyenziswa kwizixhobo zombane ezinamandla aphezulu.Uhlobo lwesibini yi-epitaxial crystal silicon carbide wafer.Olu hlobo lwe-wafer lwenziwa ngokongeza umaleko omnye we-silicon carbide crystals kumphezulu.Le ndlela idinga ulawulo oluchanekileyo lobunzima bezinto eziphathekayo kwaye yaziwa ngokuba yi-N-type epitaxy.
Uhlobo olulandelayo yi-beta silicon carbide.I-Beta SiC iveliswa kumaqondo obushushu angaphezu kwe-1700 degrees Celsius.I-Alpha carbides zezona zixhaphakileyo kwaye zine-hexagonal crystal structure efana ne-wurtzite.Ifomu ye-beta iyafana nedayimane kwaye isetyenziswa kwezinye izicelo.Ibisoloko ilukhetho lokuqala lwamandla esithuthi sombane seemveliso ezigqityiweyo.Abathengisi abaninzi beqela lesithathu le-silicon carbide wafer ngoku basebenza kwesi sixhobo sitsha.
Ii-wafer ze-ZMSH zeSiC zizinto ezithandwa kakhulu kwi-semiconductor.Yimathiriyeli ye-semiconductor ekumgangatho ophezulu ekufanelekele usetyenziso oluninzi.I-ZMSH silicon carbide wafers zizinto eziluncedo kakhulu kwiintlobo ngeentlobo zezixhobo zombane.I-ZMSH ibonelela ngoluhlu olubanzi lweewafer zeSiC ezikumgangatho ophezulu kunye nee substrates.Zifumaneka ngohlobo lwe-N kunye neefom ze-semi-insulated.
I-2---Silicon Carbide: Ukuya kwixesha elitsha lee-wafers
Iimpawu ezibonakalayo kunye neempawu ze-silicon carbide
I-Silicon carbide inesakhiwo esikhethekileyo sekristale, isebenzisa isakhiwo esivaliweyo esinehexagonal esifana nedayimane.Esi sakhiwo senza ukuba i-silicon carbide ibe ne-conductivity egqwesileyo ye-thermal kunye nokumelana nokushisa okuphezulu.Xa kuthelekiswa nezinto ze-silicon zemveli, i-silicon carbide inobubanzi bebhendi enkulu, ebonelela ngesithuba sebhendi ye-electron ephezulu, ekhokelela ekuhambeni okuphezulu kwe-electron kunye nokuvuza okuphantsi kwangoku.Ukongeza, i-silicon carbide ikwanesantya esiphezulu se-electron saturation drift kunye ne-resistivity esezantsi yemathiriyeli ngokwayo, ibonelela ukusebenza okungcono kwezicelo zamandla aphezulu.
Iimeko zesicelo kunye nethemba le-silicon carbide wafers
Ukusetyenziswa kombane wombane
I-silicon ye-carbide wafer inethemba elibanzi lokusetyenziswa kwintsimi yombane we-elektroniki.Ngenxa yokuhamba kwazo okuphezulu kwe-electron kunye nokuhamba kakuhle kwe-thermal, ii-wafers ze-SIC zingasetyenziselwa ukuvelisa izixhobo zokutshintsha koxinzelelo lwamandla aphezulu, njengeemodyuli zamandla kwizithuthi zombane kunye ne-solar inverters.Uzinzo oluphezulu lobushushu be-silicon carbide wafers lwenza ukuba ezi zixhobo zisebenze kwiindawo eziphezulu zokushisa, zibonelela ngokusebenza kakuhle kunye nokuthembeka.
Usetyenziso lwe-Optoelectronic
Kwintsimi yezixhobo ze-optoelectronic, ii-silicon carbide wafers zibonisa izibonelelo zabo ezizodwa.Izinto zeSilicon carbide zineempawu zebhendi ebanzi, eyenza ukuba ifikelele amandla e-photonon ephezulu kunye nokulahleka kokukhanya okuphantsi kwizixhobo ze-optoelectronic.I-silicon carbide wafers ingasetyenziselwa ukulungiselela izixhobo zokunxibelelana ngesantya esiphezulu, i-photodetectors kunye ne-lasers.I-thermal conductivity egqwesileyo kunye ne-crystal defect density ephantsi yenza ukuba ilungele ukulungiswa kwezixhobo eziphezulu ze-optoelectronic.
Outlook
Ngokukhula kwemfuno yezixhobo zombane ezisebenza ngokuphezulu, ii-silicon carbide wafers zinekamva elithembisayo njengemathiriyeli eneempawu ezigqwesileyo kunye namandla osetyenziso olubanzi.Ngokuphuculwa okuqhubekayo kweteknoloji yokulungiselela kunye nokunciphisa iindleko, ukusetyenziswa kwezorhwebo kwe-silicon carbide wafers kuya kukhuthazwa.Kulindeleke ukuba kule minyaka imbalwa izayo, ii-silicon carbide wafers ziya kungena ngokuthe ngcembe kwimarike kwaye zibe lukhetho oluphambili lwamandla aphezulu, ukuphindaphindwa okuphezulu kunye nobushushu obuphezulu bezicelo.
3---Uhlalutyo olunzulu lwentengiso ye-SiC wafer kunye neendlela zobuchwepheshe
Uhlalutyo olunzulu lwe-silicon carbide (SiC) abaqhubi beemarike ze-wafer
Ukukhula kwe-silicon carbide (SiC) imakethi ye-wafer kuphenjelelwa zizinto ezininzi eziphambili, kwaye uhlalutyo olunzulu lwempembelelo yezi zinto kwimarike lubalulekile.Nazi ezinye zeenkokeli eziphambili zemarike:
Ukugcinwa kwamandla kunye nokukhuselwa kwendalo: Ukusebenza okuphezulu kunye neempawu zokusetyenziswa kwamandla aphantsi kwezixhobo ze-silicon carbide zenza ukuba zidume kwintsimi yokugcina amandla kunye nokukhuselwa kwendalo.Imfuno yezithuthi zombane, ii-inverters zelanga kunye nezinye izixhobo zokuguqula amandla ziqhuba ukukhula kwemarike yee-silicon carbide wafers njengoko inceda ukunciphisa inkcitho yamandla.
Izicelo ze-Electronics zamandla: I-silicon carbide igqwesa kwizicelo ze-electronics zamandla kwaye ingasetyenziselwa amandla ombane phantsi koxinzelelo oluphezulu kunye neendawo zokushisa eziphezulu.Ngokuthandwa kwamandla avuselelekayo kunye nokukhuthaza inguqu yamandla ombane, imfuno ye-silicon carbide wafers kwimarike yombane we-elektroniki iyaqhubeka nokukhula.
I-SiC yafeza ikamva lophuhliso lobuchwephesha bokwenza uhlalutyo oluneenkcukacha
Ukuveliswa ngobuninzi kunye nokunciphisa iindleko: Ukuveliswa kwe-SiC ye-future SiC kuya kugxila ngakumbi kwimveliso yobuninzi kunye nokunciphisa iindleko.Oku kuquka iindlela zokukhula eziphuculweyo ezifana nekhemikhali yokubeka umphunga (CVD) kunye ne-physical vapor deposition (PVD) ukwandisa imveliso nokunciphisa iindleko zemveliso.Ukongeza, ukwamkelwa kweenkqubo zokuvelisa ezikrelekrele kunye nezizenzekelayo kulindeleke ukuba kuphuculwe ngakumbi ukusebenza kakuhle.
Ubungakanani obutsha be-wafer kunye nesakhiwo: Ubungakanani kunye nokwakheka kwee-wafers ze-SiC kunokutshintsha kwixesha elizayo ukuhlangabezana neemfuno zezicelo ezahlukeneyo.Oku kunokubandakanya iiwafa ezinkulu zedayamitha, izakhiwo ezingafaniyo, okanye iiwafa ezininzi ukunika ubunwele boyilo kunye neendlela zokusebenza.
UkuSebenza koMbane kunye nokuVeliswa kokuHlaza: Ukwenziwa kwee-wafers ze-SiC kwixesha elizayo kuya kugxininisa kakhulu ekusebenzeni kwamandla kunye nokuveliswa kohlaza.Iifektri ezinikwa amandla ahlaziyekayo, izinto eziluhlaza, ukusetyenzwa ngokutsha kwenkunkuma kunye neenkqubo zokuvelisa ikhabhoni ephantsi ziya kuba yimikhwa kwimveliso.
Ixesha lokuposa: Jan-19-2024