Xa kuthelekiswa nezixhobo ze-silicon carbide, izixhobo zamandla ze-gallium nitride ziya kuba neenzuzo ezininzi kwiimeko apho ukusebenza kakuhle, ukuphindaphinda, umthamo kunye neminye imiba ebanzi ifunekayo ngexesha elifanayo, njengezixhobo ezisekelwe kwi-gallium nitride zisetyenziswe ngempumelelo kwintsimi yokutshaja ngokukhawuleza. umlinganiselo omkhulu.Ngokuqhambuka kwezicelo ezitsha ezisezantsi, kunye nokuphumelela okuqhubekayo kwe-gallium nitride substrate yokulungiselela iteknoloji, izixhobo ze-GaN zilindeleke ukuba ziqhubeke nokwandisa umthamo, kwaye ziya kuba yinye yezobuchwepheshe obuphambili bokunciphisa iindleko kunye nokusebenza kakuhle, uphuhliso oluzinzileyo oluluhlaza.
Okwangoku, isizukulwana sesithathu semathiriyeli ye-semiconductor ibe yinxalenye ebalulekileyo yamashishini asakhasayo acwangcisiweyo, kwaye ikwayindawo yokulawula yeqhinga lokuhlutha isizukulwana esilandelayo sobuchwephesha bolwazi, ugcino lwamandla kunye nokunciphisa ukukhutshwa kunye nobuchwepheshe bokhuseleko lwelizwe.Phakathi kwabo, i-gallium nitride (i-GaN) yenye yezona zinto zimele i-semiconductor yesizukulwana sesithathu njengento ebanzi ye-bandgap semiconductor kunye ne-bandgap ye-3.4eV.
NgoJulayi 3, i-China yaqinisa ukuthunyelwa kwezinto ezinxulumene ne-gallium kunye ne-germanium, eyona nto ibalulekileyo yohlengahlengiso lomgaqo-nkqubo olusekelwe kuphawu olubalulekileyo lwe-gallium, isinyithi esinqabileyo, njenge "inkozo entsha yoshishino lwe-semiconductor," kunye neenzuzo zayo ezibanzi kwisicelo. izixhobo ze-semiconductor, amandla amatsha kunye nezinye iinkalo.Ngenxa yolu tshintsho lomgaqo-nkqubo, eli phepha liza kuxubusha kwaye lihlalutye i-gallium nitride kwiinkalo zeteknoloji yokulungiselela kunye nemingeni, iindawo ezintsha zokukhula kwixesha elizayo, kunye nokhuphiswano lokhuphiswano.
Intshayelelo emfutshane:
I-Gallium nitride luhlobo lwezinto zokwenziwa kwe-semiconductor, engummeli oqhelekileyo wesizukulwana sesithathu sezinto ze-semiconductor.Xa kuthelekiswa nezinto ze-silicon zendabuko, i-gallium nitride (i-GaN) ineenzuzo ze-band-gap enkulu, intsimi yombane eyophukileyo, i-low-resistance, ukuhamba kwe-electron ephezulu, ukusebenza kakuhle kokuguqulwa, ukuhanjiswa kwe-thermal ephezulu kunye nokulahlekelwa okuphantsi.
I-crystal ye-Gallium nitride sisizukulwana esitsha sezinto ze-semiconductor ezisebenza kakuhle, ezinokuthi zisetyenziswe ngokubanzi kunxibelelwano, i-radar, i-electronics yabathengi, i-electronics yemoto, amandla ombane, i-laser ye-industrial processing, i-instrumentation kunye nezinye iindawo, ngoko ukuphuhliswa kwayo kunye nokuveliswa kobuninzi. ingqwalasela yamazwe kunye namashishini kwihlabathi jikelele.
Ukusetyenziswa kwe-GaN
Isikhululo sesiseko sonxibelelwano se-1--5G
Iziseko zonxibelelwano ezingenazingcingo yeyona ndawo iphambili yesicelo sezixhobo ze-gallium nitride RF, ezibalelwa kuma-50%.
2--Umbane ophezulu
Uphawu "lobude obuphindwe kabini" lwe-GaN lunamandla okungena aphezulu kwizixhobo zombane ezisebenza ngokuphezulu, ezinokuhlangabezana neemfuno zokutshaja ngokukhawuleza kunye neemeko zokukhusela intlawulo.
3--Isithuthi samandla esitsha
Ukusuka kwimbono yesicelo esisebenzayo, izixhobo zangoku ze-semiconductor yesizukulwana sesithathu kwimoto zizixhobo ze-silicon carbide, kodwa kukho izinto ezifanelekileyo ze-gallium nitride ezinokudlula ukuqinisekiswa kokulawulwa kwemoto yeemodyuli zesixhobo samandla, okanye ezinye iindlela zokupakisha ezifanelekileyo. isamkelwa sisityalo sonke kunye nabavelisi be-OEM.
4--Iziko ledatha
I-semiconductors yamandla e-GaN isetyenziswa ikakhulu kwiiyunithi zobonelelo lwamandla e-PSU kumaziko edatha.
Isishwankathelo, ngokuqhambuka kwezicelo ezitsha ezisezantsi kunye nokuphumelela okuqhubekayo kwi-gallium nitride substrate yokulungiswa kweteknoloji, izixhobo ze-GaN zilindeleke ukuba ziqhubeke nokunyuka kwevolumu, kwaye ziya kuba enye yezobuchwepheshe obuphambili bokunciphisa iindleko kunye nokusebenza kakuhle kunye nophuhliso oluzinzileyo oluluhlaza.
Ixesha lokuposa: Jul-27-2023