Ukwamkelwa kwesixhobo samandla seGallium nitride (GaN) sikhula ngokumangalisayo, sikhokelwa ngabathengisi be-elektroniki baseTshayina, kwaye imarike yamandla ezixhobo zeGaN kulindeleke ukuba ifikelele kwi-2 yeebhiliyoni zeedola ngo-2027, ukusuka kwi-126 yezigidi zeedola ngo-2021. Okwangoku, icandelo le-elektroniki labathengi umqhubi ophambili wokwamkelwa kwe-gallium nitride, kunye ne-arhente eqikelele ukuba imfuno yamandla e-GaN kwimarike yomthengi we-elektroniki iya kukhula ukusuka kwi-79.6 yezigidi zeedola ngo-2021 ukuya kwi-964.7 yezigidi zeedola ngo-2027, izinga lokukhula elihlanganisiweyo lonyaka lama-52 ekhulwini.
Izixhobo ze-GaN zinozinzo oluphezulu, ukumelana nokushisa okulungileyo, ukuqhutyelwa kombane kunye nokutshatyalaliswa kobushushu.Xa kuthelekiswa namacandelo e-silicon, izixhobo ze-GaN zinokuxinana kwe-electron ephezulu kunye nokuhamba.Izixhobo ze-GaN zisetyenziswa ikakhulu kwimakethi ye-elektroniki yabathengi ukutshaja ngokukhawuleza kunye nonxibelelwano kunye nezicelo zebroadband.
Abangaphakathi kwishishini bathi ngelixa intengiso ye-elektroniki yabathengi ihlala ibuthathaka, imbonakalo yezixhobo ze-GaN ihlala iqaqambile.Kwimakethi ye-GaN, abavelisi baseTshayina babeke kwi-substrate, i-epitaxial, uyilo kunye neendawo zokwenziwa kwekhontrakthi.Abona benzi babini babalulekileyo kwi-ecosystem ye-GaN yaseTshayina yi-Innoseco kunye ne-Xiamen SAN 'an IC.
Ezinye iinkampani zaseTshayina kwicandelo le-GaN ziquka umenzi we-substrate uSuzhou Nawei Technology Co., LTD., Dongguan Zhonggan Semiconductor Technology Co., LTD., umthengisi we-epitaxy uSuzhou Jingzhan Semiconductor Co., LTD., Jiangsu Nenghua Microelectronics Technology Development Co., LTD. , kunye neChengdu Haiwei Huaxin Technology Co., LTD.
I-Suzhou Nawei Technology izibophelele kuphando kunye nophuhliso kunye noshishino lwe-gallium nitride (GaN) i-crystal substrate enye, eyona nto ingundoqo ye-semiconductor yesizukulwana sesithathu.Emva kweminyaka eyi-10 yemizamo, iTekhnoloji yeNawei iye yaqonda ukuveliswa kwe-2-intshi ye-gallium nitride enye yekristale substrate, igqibe uphuhliso lobugcisa bobunjineli beemveliso ze-intshi ezi-4, kwaye yaphulwa ngeteknoloji engundoqo ye-6-intshi.Ngoku yiyo yodwa e-China kwaye enye yezona zimbalwa emhlabeni ezinokubonelela nge-2-intshi ye-gallium nitride enye yeemveliso zekristale ngobuninzi.Isalathisi sokusebenza kwemveliso ye-Gallium nitride ihamba phambili kwihlabathi.Kule minyaka mi-3 izayo, siza kugxila ekuguquleni itekhnoloji yokuqala ibe yinzuzo kwimarike yehlabathi.
Njengoko itekhnoloji ye-GaN ikhula, usetyenziso lwayo luya kwanda ukusuka kwiimveliso zokutshaja ngokukhawuleza kubathengi be-elektroniki ukuya kumandla ombane we-PCS, iiseva kunye ne-TVS.Ziya kusetyenziswa ngokubanzi kwiitshaja zemoto kunye neziguquli kwizithuthi zombane.
Ixesha lokuposa: Apr-18-2023