IiSubstrates zeSemiconductor zesizukulwana esilandelayo: iSapphire, iSilicon, kunye neSilicon Carbide

Kwishishini le-semiconductor, ii-substrates zizinto ezisisiseko apho ukusebenza kwesixhobo kuxhomekeke khona. Iimpawu zazo zomzimba, ubushushu, kunye nombane zichaphazela ngokuthe ngqo ukusebenza kakuhle, ukuthembeka, kunye nobubanzi bokusetyenziswa. Phakathi kwazo zonke iindlela, i-sapphire (Al₂O₃), i-silicon (Si), kunye ne-silicon carbide (SiC) ziye zaba zezona substrates zisetyenziswa kakhulu, nganye igqwesa kwiindawo ezahlukeneyo zobuchwepheshe. Eli nqaku lihlola iimpawu zazo zezinto, iindawo zokusetyenziswa, kunye neendlela zophuhliso zexesha elizayo.

I-Sapphire: Ihashe Lokusebenza Elibonakalayo

I-Sapphire luhlobo lwe-aluminium oxide oluyikristali enye olune-lattice ene-hexagonal lattice. Iimpawu zayo eziphambili ziquka ubulukhuni obungaqhelekanga (ubulukhuni be-Mohs 9), ukukhanya okubanzi kwe-optical ukusuka kwi-ultraviolet ukuya kwi-infrared, kunye nokumelana okunamandla kweekhemikhali, okwenza ukuba ilungele izixhobo ze-optoelectronic kunye neendawo ezinobungozi. Iindlela zokukhula eziphambili ezifana ne-Heat Exchange Method kunye ne-Kyropoulos method, zidityaniswe ne-chemical-mechanical polishing (CMP), zivelisa ii-wafers ezine-sub-nanometer surface roughness.

Ii-substrates zesafire zisetyenziswa kakhulu kwii-LED kunye nee-Micro-LED njengee-GaN epitaxial layers, apho ii-substrates zesafire ezineepateni (PSS) ziphucula ukusebenza kakuhle kokukhupha ukukhanya. Zikwasetyenziswa kwizixhobo ze-RF ezisebenzisa i-frequency ephezulu ngenxa yeempawu zazo zokufakelwa kombane, nakwizixhobo ze-elektroniki zabathengi kunye ne-aerospace njengeefestile ezikhuselayo kunye nezigqubuthelo zesensor. Imida ibandakanya ukuhanjiswa kobushushu obuphantsi (35–42 W/m·K) kunye nokungafani kwe-lattice neGaN, nto leyo efuna ii-buffer layers ukunciphisa iziphene.

ISilicon: Isiseko seMicroelectronics

I-Silicon isengumqolo we-elektroniki yendabuko ngenxa yenkqubo yayo yemizi-mveliso evuthiweyo, ukuhanjiswa kombane okuhlengahlengiswayo ngokusebenzisa i-doping, kunye neempawu zobushushu eziphakathi (ukuhanjiswa kobushushu ~150 W/m·K, indawo yokunyibilika 1410°C). Ngaphezulu kwe-90% yeesekethe ezidibeneyo, kubandakanya ii-CPU, imemori, kunye nezixhobo ze-logic, zenziwe kwii-wafers ze-silicon. I-Silicon ikwalawula iiseli ze-photovoltaic kwaye isetyenziswa kakhulu kwizixhobo zamandla aphantsi ukuya kwaphakathi ezifana nee-IGBTs kunye nee-MOSFET.

Nangona kunjalo, i-silicon ijongene nemingeni kwizicelo ze-high-voltage kunye ne-high-frequency ngenxa ye-bandgap yayo encinci (1.12 eV) kunye ne-bandgap engathanga ngqo, ethintela ukusebenza kakuhle kokukhutshwa kokukhanya.

I-Silicon Carbide: Umsunguli Onamandla Aphezulu

I-SiC sisixhobo se-semiconductor sesizukulwana sesithathu esine-bandgap ebanzi (3.2 eV), i-voltage ephezulu yokuqhekeka (3 MV/cm), i-thermal conductivity ephezulu (~490 W/m·K), kunye nesantya esikhawulezayo sokugcwala kwe-electron (~2×10⁷ cm/s). Ezi mpawu ziyenza ilungele izixhobo ezine-voltage ephezulu, amandla aphezulu, kunye ne-frequency ephezulu. Ii-substrates ze-SiC zihlala zikhuliswa nge-physical vapor transport (PVT) kumaqondo obushushu angaphezulu kwe-2000°C, kunye neemfuno zokucubungula ezintsonkothileyo nezichanekileyo.

Izicelo ziquka iimoto zombane, apho iiSiC MOSFET ziphucula ukusebenza kakuhle kwe-inverter nge-5–10%, iinkqubo zonxibelelwano ze-5G ezisebenzisa i-semi-insulation SiC kwizixhobo zeGaN RF, kunye neegridi ezikrelekrele ezine-high-voltage direct current (HVDC) transmission ezinciphisa ilahleko yamandla ukuya kuthi ga kwi-30%. Imida ziindleko eziphezulu (ii-wafers ze-intshi ezi-6 zibiza ngokuphindwe ka-20–30 kune-silicon) kunye nemingeni yokucubungula ngenxa yobunzima obukhulu.

Iindima ezongezelelweyo kunye neMbono yexesha elizayo

I-Sapphire, i-silicon, kunye ne-SiC zenza i-substrate ecosystem ehambelanayo kwishishini le-semiconductor. I-Sapphire ilawula i-optoelectronics, i-silicon ixhasa i-microelectronics zemveli kunye nezixhobo zamandla eziphantsi ukuya kweziphakathi, kwaye i-SiC ikhokela i-electronics zamandla ezinamandla aphezulu, amaza aphezulu, kunye nokusebenza kakuhle.

Uphuhliso lwexesha elizayo luquka ukwandisa usetyenziso lwesafire kwii-LED ezinzulu ze-UV kunye nee-micro-LED, okuvumela i-Si-based GaN heteroepitaxy ukuba iphucule ukusebenza kwe-high-frequency, kunye nokwandisa imveliso ye-SiC wafer ukuya kwi-intshi ezi-8 ngokuphucula isivuno kunye nokusebenza kakuhle kweendleko. Zidibene, ezi zixhobo ziqhuba ubuchule kwi-5G, i-AI, kunye nokuhamba kombane, zibumba isizukulwana esilandelayo setekhnoloji ye-semiconductor.