Q: Zeziphi iiteknoloji eziphambili ezisetyenziswa ekusikeni nasekucubunguleni i-SiC wafer?
A:I-silicon carbide (SiC) inobunzima obulandelayo emva kwedayimani kwaye ithathwa njengento eqinileyo neqhekekayo. Inkqubo yokusika, equka ukusika iikristale ezikhulileyo zibe zii-wafers ezincinci, ithatha ixesha kwaye ithambekele ekuqhekekeni. Njengenyathelo lokuqala kwiI-SiCUkucutshungulwa kwekristale enye, umgangatho wokusikwa unefuthe elikhulu ekusikweni, ekupolishweni nasekuncitshisweni okulandelayo. Ukusikwa kudla ngokuzisa imifantu engaphezulu nangaphantsi komhlaba, okunyusa amazinga okuqhekeka kwe-wafer kunye neendleko zemveliso. Ke ngoko, ukulawula umonakalo wokuqhekeka komphezulu ngexesha lokusikwa kubalulekile ekuphuculeni ukwenziwa kwezixhobo zeSiC.
Iindlela zokusila zeSiC ezixeliweyo ngoku ziquka ukusila okusisigxina, ukusila okukhululekileyo, ukusika nge-laser, ukudluliselwa komaleko (ukwahlulwa okubandayo), kunye nokusila ngombane. Phakathi kwezi, ukusila ngeentambo ezininzi ngee-abrasive zedayimani ezisisigxina yeyona ndlela isetyenziswa kakhulu ekucubunguleni iikristale zeSiC ezizodwa. Nangona kunjalo, njengoko ubukhulu be-ingot bufikelela kwi-intshi ezi-8 nangaphezulu, ukusarha ngentambo yendabuko akubalulekanga kangako ngenxa yeemfuno eziphezulu zezixhobo, iindleko, kunye nokusebenza kakuhle. Kukho imfuneko engxamisekileyo yetekhnoloji yokusila engabizi kakhulu, elahlekayo ephantsi, nesebenza kakuhle kakhulu.
Q: Zithini iingenelo zokusika nge-laser ngaphezu kokusika ngentambo ezininzi zemveli?
A: Ukusarha ucingo lwendabuko kunqumlaIngot yeSiCZibekwe kwicala elithile zibe ziziqwenga ezingamakhulu aliqela ee-microns ubukhulu. Ezi ziqwenga ziyacolwa kusetyenziswa i-slurry yedayimani ukususa amabala esarha kunye nomonakalo ongaphantsi komhlaba, kulandele i-chemical mechanical polishing (CMP) ukuze kufezekiswe i-global planarization, kwaye ekugqibeleni zicocwe ukuze kufunyanwe ii-SiC wafers.
Nangona kunjalo, ngenxa yobunzima obuphezulu kunye nokuqhekeka kweSiC, la manyathelo anokubangela ukugoba, ukuqhekeka, ukwanda kwamazinga okuqhekeka, iindleko eziphezulu zemveliso, kwaye kubangele uburhabaxa obuphezulu bomphezulu kunye nongcoliseko (uthuli, amanzi amdaka, njl.njl.). Ukongeza, ukusarha ucingo kuhamba kancinci kwaye kunemveliso ephantsi. Uqikelelo lubonisa ukuba ukusika iintambo ezininzi zendabuko kufikelela kuphela kwi-50% yokusetyenziswa kwezinto, kwaye ukuya kuthi ga kwi-75% yezinto zilahleka emva kokupolisha nokusila. Idatha yokuqala yemveliso yangaphandle ibonise ukuba kungathatha malunga neentsuku ezingama-273 zemveliso eqhubekayo yeeyure ezingama-24 ukuvelisa ii-wafers ezili-10,000—ithatha ixesha elininzi kakhulu.
Kumazwe angaphandle, iinkampani ezininzi zokukhulisa iikristale zeSiC zigxile ekwandiseni amandla eziko. Nangona kunjalo, endaweni yokwandisa imveliso, kubaluleke ngakumbi ukuqwalasela indlela yokunciphisa ilahleko—ingakumbi xa isivuno sokukhula kweekristale singakabi semgangathweni.
Izixhobo zokusika nge-laser zinokunciphisa kakhulu ukulahleka kwezinto kwaye ziphucule isivuno. Umzekelo, ukusebenzisa i-20 mm enyeIngot yeSiC:Ukusarha ngentambo kunokuvelisa malunga nee-wafers ezingama-30 ezinobukhulu obuyi-350 μm. Ukusarha nge-laser kunokuvelisa ii-wafers ezingaphezu kwama-50. Ukuba ubukhulu be-wafer buncitshisiwe ukuya kwi-200 μm, ii-wafers ezingaphezu kwama-80 zinokwenziwa kwi-ingot efanayo. Ngelixa ukusarha ngentambo kusetyenziswa kakhulu kwii-wafers ezincinci ezi-6 intshi, ukusarha nge-ingot ye-SiC engama-8 intshi kungathatha iintsuku ezili-10-15 ngeendlela zemveli, ezifuna izixhobo eziphezulu kwaye zifumana iindleko eziphezulu ngokusebenza okuphantsi. Phantsi kwezi meko, iingenelo zokusarha nge-laser ziyacaca, nto leyo eyenza ukuba ibe yiteknoloji ephambili yexesha elizayo kwii-wafers ezingama-8 intshi.
Ngokusika nge-laser, ixesha lokusika nge-wafer nganye ye-intshi ezi-8 linokuba ngaphantsi kwemizuzu engama-20, kunye nokulahleka kwezinto nge-wafer nganye kungaphantsi kwe-60 μm.
Ngamafutshane, xa kuthelekiswa nokusika ngentambo ezininzi, ukusika nge-laser kunika isantya esiphezulu, isivuno esingcono, ukulahleka kwezinto ezisetyenzisiweyo okuncinci, kunye nokulungiswa okucocekileyo.
Q: Zeziphi iingxaki zobugcisa eziphambili ekusikeni nge-laser ye-SiC?
A: Inkqubo yokusikwa kwelaser ibandakanya amanyathelo amabini aphambili: ukuguqulwa kwelaser kunye nokwahlulwa kwewafer.
Eyona nto iphambili ekuguqulweni kwelaser kukubumba imisebe kunye nokwenza ngcono iiparameter. Iiparameter ezifana namandla elaser, ububanzi bebala, kunye nesantya sokuskena zonke zichaphazela umgangatho wokususwa kwezinto kunye nempumelelo yokwahlulwa kwe-wafer okulandelayo. Ijiyometri yendawo eguquliweyo imisela uburhabaxa bomphezulu kunye nobunzima bokwahlulwa. Uburhabaxa bomphezulu obuphezulu buyenza nzima into yokusila kamva kwaye bunyusa ukulahleka kwezinto.
Emva kokuguqulwa, ukwahlulwa kwe-wafer kudla ngokufezekiswa ngamandla okucheba, njengokuqhekeka komkhuhlane okanye uxinzelelo loomatshini. Ezinye iinkqubo zasekhaya zisebenzisa ii-transducers ze-ultrasonic ukukhuthaza ukungcangcazela ukuze kwahlulwe, kodwa oku kunokubangela iziphene zokuqhekeka kunye nemiphetho, okunciphisa isivuno sokugqibela.
Nangona la manyathelo mabini engekho nzima ngokwemvelo, ukungangqinelani komgangatho wekristale—ngenxa yeenkqubo ezahlukeneyo zokukhula, amanqanaba okusebenzisa iziyobisi, kunye nokusasazwa koxinzelelo lwangaphakathi—kuchaphazela kakhulu ubunzima bokusika, isivuno, kunye nokulahleka kwezinto. Ukuchonga nje iindawo ezinengxaki kunye nokulungisa iindawo zokuskena nge-laser kusenokungaziphuculi kakhulu iziphumo.
Isitshixo sokwamkelwa ngokubanzi sisekuphuhliseni iindlela ezintsha kunye nezixhobo ezinokuziqhelanisa noluhlu olubanzi lweempawu zekristale ezivela kubavelisi abahlukeneyo, ukuphucula iiparameter zenkqubo, kunye nokwakha iinkqubo zokusika i-laser ezinokusetyenziswa ngokubanzi.
Q: Ngaba iteknoloji yokusika nge-laser ingasetyenziswa kwezinye izinto ze-semiconductor ngaphandle kwe-SiC?
A: Itekhnoloji yokusika i-laser ibisoloko isetyenziswa kwizinto ezahlukeneyo. Kwi-semiconductors, yayisetyenziswa ekuqaleni ekudibaniseni i-wafer kwaye ukususela ngoko iye yanda yaya ekusikeni iikristale ezinkulu ezinkulu.
Ngaphaya kweSiC, ukunqunqa nge-laser kungasetyenziselwa nezinye izinto eziqinileyo okanye ezibuthathaka ezifana nedayimani, i-gallium nitride (GaN), kunye ne-gallium oxide (Ga₂O₃). Izifundo zokuqala kwezi zinto zibonise ukuba kunokwenzeka kunye neenzuzo zokunqunqa nge-laser kwizicelo ze-semiconductor.
Q: Ngaba kukho iimveliso zezixhobo zokusika i-laser zasekhaya ezivuthiweyo okwangoku? Uphando lwakho lukwinqanaba elingakanani?
A: Izixhobo zokusika i-laser ze-SiC ezinobukhulu obukhulu zithathwa njengezixhobo eziphambili kwixesha elizayo lokuvelisa i-wafer ye-SiC ye-intshi ezi-8. Okwangoku, yiJapan kuphela enokubonelela ngeenkqubo ezinjalo, kwaye zibiza kakhulu kwaye ziphantsi kwemiqathango yokuthumela ngaphandle.
Imfuno yasekhaya yeenkqubo zokusika/zokunciphisa nge-laser iqikelelwa ukuba imalunga neeyunithi ezili-1,000, ngokusekelwe kwizicwangciso zemveliso ye-SiC kunye nomthamo wesarha yentambo ekhoyo. Iinkampani ezinkulu zasekhaya zityale imali eninzi kuphuhliso, kodwa akukho zixhobo zasekhaya ezivuthiweyo nezifumanekayo zorhwebo ezifikelele kwimveliso.
Amaqela ophando ebesoloko ephuhlisa iteknoloji yokuphakamisa i-laser ukususela ngo-2001 kwaye ngoku ayandise le nto ukuya ekusikeni nasekunciphiseni i-laser ye-SiC enobubanzi obukhulu. Baphuhlise inkqubo yeprototype kunye neenkqubo zokusike ezikwaziyo: Ukusika nokuncitshisa ii-wafers ze-SiC ezizi-4-6 intshi ezizi-semi-insulatingIzi-ingots ze-SiC ezizi-6-8 intshi ezizi-conductiveIimilinganiselo zokusebenza: ii-intshi ezi-6-8 ezizi-semi-insulatingI-SiC: ixesha lokusike imizuzu eli-10-15/i-wafer; ukulahleka kwezinto <30 μm6-8 intshi ezizi-conductiveI-SiC: ixesha lokusike imizuzu eli-14-20/i-wafer; ukulahleka kwezinto <60 μm
Isivuno esiqikelelweyo se-wafer sinyuke ngaphezulu kwama-50%
Emva kokusikwa, ii-wafers ziyahlangabezana nemigangatho yesizwe yejometri emva kokusikwa nokupholishwa. Izifundo zibonisa nokuba iziphumo zobushushu ezibangelwa yilaser azichaphazeli kakhulu uxinzelelo okanye ijometri kwii-wafers.
Ezi zixhobo zikwasetyenziswa ukuqinisekisa ukuba kunokwenzeka na ukunqumla iikristale zedayimani, iGaN, kunye neGa₂O₃.
Ixesha leposi: Meyi-23-2025