Intshayelelo ye-silicon carbide
I-Silicon carbide (i-SiC) yimpahla ye-semiconductor edibeneyo eyenziwe ngekhabhoni kunye ne-silicon, enye yezinto ezifanelekileyo zokwenza ukushisa okuphezulu, ukuphindaphinda okuphezulu, amandla aphezulu kunye nezixhobo zombane ophezulu.Xa kuthelekiswa nezinto eziqhelekileyo ze-silicon (Si), i-gap yebhendi ye-silicon carbide yi-3 amaxesha e-silicon.I-conductivity ye-thermal yi-4-5 amaxesha e-silicon;I-voltage yokuqhawula i-8-10 ngamaxesha e-silicon;Umyinge we-electron saturation drift rate yi-2-3 yamaxesha e-silicon, ehlangabezana neemfuno zoshishino lwangoku lwamandla aphezulu, i-voltage ephezulu kunye ne-frequency ephezulu.Isetyenziselwa ikakhulu ukuveliswa kwezixhobo ze-elektroniki ze-high-speed, high-frequency, high-power and light-emitting electronic components.Imimandla yesicelo esezantsi ibandakanya igridi ehlakaniphile, izithuthi zamandla amatsha, amandla omoya omoya we-photovoltaic, unxibelelwano lwe-5G, njl. Ii-silicon carbide diode kunye ne-MOSFETs zisetyenziselwe urhwebo.
Ukumelana nobushushu obuphezulu.I-gap yebhendi ububanzi be-silicon carbide yi-2-3 yamaxesha e-silicon, i-electron akulula ukuyitshintsha kumaqondo aphezulu okushisa, kwaye inokumelana namaqondo okushisa aphezulu, kunye ne-thermal conductivity ye-silicon carbide ngamaxesha angama-4-5 e-silicon. ukwenza isixhobo ukutshatyalaliswa kobushushu lula kwaye umda ukusebenza ubushushu phezulu.Ukumelana nobushushu obuphezulu kunokunyusa kakhulu ubuninzi bamandla ngelixa unciphisa iimfuno kwinkqubo yokupholisa, okwenza i-terminal ibe lula kwaye incinci.
Ukumelana noxinzelelo oluphezulu.Amandla ombane ophukileyo we-silicon carbide ngamaxesha angama-10 kune-silicon, enokumelana nombane ophezulu kwaye ifaneleke ngakumbi kwizixhobo eziphezulu zombane.
Ukuxhathisa amaza aphezulu.I-Silicon carbide inezinga lokukhukuliseka kwe-electron egcweleyo kabini kune-silicon, ebangela ukungabikho komsila wangoku ngexesha lenkqubo yokuvalwa, enokuphucula ngokufanelekileyo ukutshintshwa kwamaxesha esixhobo kunye nokuqaphela i-miniaturization yesixhobo.
Ukulahleka kwamandla aphantsi.Xa kuthelekiswa nezinto zesilicon, i-silicon carbide inokumelana kakhulu kunye nelahleko ephantsi.Kwangelo xesha, ububanzi bebhendi ephezulu ye-silicon carbide kunciphisa kakhulu ukuvuza kwangoku kunye nokulahleka kwamandla.Ukongeza, isixhobo se-silicon carbide asinayo into yangoku yokulandela ngexesha lokuvala, kwaye ukulahleka kokutshintsha kuphantsi.
Itsheyini yeshishini le-silicon carbide
Ibandakanya ikakhulu i-substrate, i-epitaxy, uyilo lwesixhobo, ukuvelisa, ukutywinwa njalo njalo.I-Silicon carbide ukusuka kwisixhobo ukuya kwisixhobo samandla se-semiconductor siya kuba nakho ukukhula kwekristale enye, i-ingot slicing, ukukhula kwe-epitaxial, uyilo lwe-wafer, ukuvelisa, ukupakishwa kunye nezinye iinkqubo.Emva kokwenziwa kwe-silicon carbide powder, i-silicon carbide ingot yenziwa kuqala, kwaye emva koko i-silicon carbide substrate ifunyenwe ngokunqunyulwa, ukugaya kunye nokupolisha, kwaye i-epitaxial sheet ifunyenwe ngokukhula kwe-epitaxial.I-epitaxial wafer yenziwe nge-silicon carbide ngokusebenzisa i-lithography, i-etching, i-ion implantation, i-metal passivation kunye nezinye iinkqubo, i-wafer inqunyulwa ibe yifa, isixhobo sihlanganiswe, kwaye isixhobo sidibaniswe kwigobolondo ekhethekileyo kwaye ihlanganiswe kwimodyuli.
Umlambo ophezulu we-industry chain 1: i-substrate - ukukhula kwekristale yikhonkco yenkqubo engundoqo
I-Silicon carbide substrate i-akhawunti malunga ne-47% yeendleko ze-silicon carbide izixhobo, imiqobo ephezulu yokuvelisa i-technical , elona xabiso likhulu, iyona nto ingundoqo ye-industrialization ye-SiC ezayo.
Ukususela kumbono wokungafani kwepropathi ye-electrochemical, izinto ze-silicon carbide substrate zingahlulwa zibe yi-conductive substrates (indawo yokumelana ne-15 ~ 30mΩ · cm) kunye ne-semi-insulated substrates (i-resistivity ephezulu kune-105Ω · cm).Ezi ntlobo zimbini zesubstrates zisetyenziselwa ukuvelisa izixhobo ezidityanisiweyo ezifana nezixhobo zamandla kunye nezixhobo zamaza kanomathotholo ngokulandelelana emva kokukhula kwe-epitaxial.Phakathi kwazo, i-semi-insulated silicon carbide substrate isetyenziswa ikakhulu ekwenzeni izixhobo zeRF ze-gallium nitride, izixhobo zombane kunye nokunye.Ngokukhula kwe-gan epitaxial layer kwi-semi-insulated SIC substrate, ipleyiti ye-sic epitaxial iyalungiswa, enokulungiswa ngakumbi kwi-HEMT gan iso-nitride RF izixhobo.I-conductive silicon carbide substrate isetyenziswa ikakhulu ekwenzeni izixhobo zamandla.Ngokwahlukileyo kwinkqubo yokwenziwa kwesixhobo samandla e-silicon, isixhobo samandla se-silicon carbide asinakwenziwa ngokuthe ngqo kwi-silicon carbide substrate, i-silicon carbide epitaxial layer kufuneka ikhuliswe kwi-conductive substrate ukuze ifumane i-silicon carbide epitaxial sheet, kunye ne-epitaxial. umaleko wenziwa kwi-Schottky diode, MOSFET, IGBT kunye nezinye izixhobo zamandla.
I-silicon carbide powder yadityaniswa ukusuka kwi-carbon powder ecocekileyo kunye ne-silicon powder ecocekileyo, kunye nobukhulu obahlukeneyo be-silicon carbide ingot yakhuliswa phantsi kwentsimi yobushushu obukhethekileyo, emva koko i-silicon carbide substrate yaveliswa ngeenkqubo ezininzi zokusetyenzwa.Inkqubo engundoqo ibandakanya:
I-Raw material synthesis: I-silicon powder ephezulu ecocekileyo + i-toner ixutywe ngokwefomula, kwaye impendulo iqhutyelwa kwigumbi lokuphendula phantsi kobushushu obuphezulu obungaphezulu kwe-2000 ° C ukudibanisa amaqhekeza e-silicon carbide kunye nohlobo oluthile lwekristale kunye nesuntswana. ubukhulu.Emva koko ngokutyumza, ukukhangela, ukucocwa kunye nezinye iinkqubo, ukuhlangabezana neemfuno zokucoceka okuphezulu kwe-silicon carbide powder ekrwada.
Ukukhula kweCrystal yeyona nkqubo iphambili yokwenziwa kwe-silicon carbide substrate, emisela iimpawu zombane ze-silicon carbide substrate.Okwangoku, iindlela eziphambili zokukhula kwekristale kukudluliselwa komphunga womzimba (PVT), ubushushu obuphezulu bekhemikhali yokubeka umphunga (HT-CVD) kunye ne-epitaxy yesigaba solwelo (LPE).Phakathi kwabo, indlela ye-PVT yindlela eqhelekileyo yokukhula kwezorhwebo ye-SiC substrate okwangoku, kunye nokuvuthwa okuphezulu kwezobugcisa kunye neyona nto isetyenziswa kakhulu kubunjineli.
Ukulungiswa kwe-substrate ye-SiC kunzima, okukhokelela kwixabiso eliphezulu
Ukulawula intsimi yobushushu kunzima: Ukukhula ngentonga ye-crystal ifuna kuphela i-1500 ℃, ngelixa intonga ye-crystal ye-SiC idinga ukukhuliswa kwiqondo lokushisa eliphezulu ngaphezu kwe-2000 ℃, kwaye kukho ngaphezu kwe-250 isomers ye-SiC, kodwa i-4H-SiC enye isakhiwo sekristale ukuveliswa kwezixhobo zamandla, ukuba akukho lawulo oluchanekileyo, luya kufumana ezinye izakhiwo zekristale.Ukongeza, i-gradient yeqondo lokushisa kwi-crucible imisela isantya sokudluliselwa kwe-SiC sublimation kunye nokuhlelwa kunye nemodi yokukhula kwe-athomu yegesi kwi-crystal interface, echaphazela izinga lokukhula kwekristale kunye nomgangatho wekristale, ngoko ke kuyimfuneko ukwenza indawo yokushisa ecwangcisiweyo. iteknoloji yokulawula.Xa kuthelekiswa nezinto ze-Si, umahluko kwimveliso ye-SiC ikwakwinkqubo yobushushu obuphezulu njengokufakelwa kwe-ion yobushushu obuphezulu, i-oxidation yobushushu obuphezulu, ukusebenza kobushushu obuphezulu, kunye nenkqubo yemaski enzima efunwa zezi nkqubo zobushushu obuphezulu.
Ukukhula kwe-crystal ecothayo: izinga lokukhula kwe-Si crystal rod linokufikelela kwi-30 ~ 150mm / h, kunye nokuveliswa kwe-1-3m ye-silicon crystal rod ithatha kuphela malunga nosuku lwe-1;I-SiC crystal rod kunye nendlela ye-PVT njengomzekelo, izinga lokukhula li malunga ne-0.2-0.4mm / h, iintsuku ezi-7 zikhula ngaphantsi kwe-3-6cm, izinga lokukhula lingaphantsi kwe-1% yezinto ze-silicon, amandla okuvelisa kakhulu. umda.
Iiparamitha zemveliso ephezulu kunye nesivuno esiphantsi: iiparitha eziphambili ze-SiC substrate ziquka ukuxinana kwe-microtubule, ukuxinana kwe-dislocation, resistivity, warpage, surface roughness, njl. Bubunjineli benkqubo entsonkothileyo ukulungiselela i-athomu kwigumbi elivaliweyo lobushushu obuphezulu kunye nokukhula okupheleleyo kwekristale, ngelixa ulawula izalathisi zeparameter.
Izinto eziphathekayo zinobunzima obuphezulu, ubunzima obuphezulu, ixesha elide lokusika kunye nokunxiba okuphezulu: Ubunzima be-SiC Mohs ye-9.25 yesibini kuphela kwidayimane, okukhokelela ekwandeni okukhulu kobunzima bokusika, ukugaya kunye nokupolisha, kwaye kuthatha malunga neeyure ze-120 ukuya. Sika amaqhekeza angama-35-40 e-ingot etyebileyo eyi-3cm.Ukongeza, ngenxa yobunzima obuphezulu be-SiC, ukunxiba kwe-wafer processing kuya kuba ngaphezulu, kwaye umlinganiselo wokuphuma umalunga nama-60%.
Indlela yophuhliso: Ukunyuka kobungakanani + ukuhla kwexabiso
Imakethi ye-SiC yehlabathi jikelele i-6-intshi yokuvelisa umthamo iyakhula, kwaye iinkampani ezikhokelayo zingene kwimarike ye-intshi ezi-8.Iiprojekthi zophuhliso lwasekhaya zizii-intshi ezi-6 ubukhulu becala.Okwangoku, nangona uninzi lweenkampani zasekhaya zisasekelwe kwimigca yokuvelisa i-intshi ezi-4, kodwa ishishini liya lisanda ukuya kutsho kwi-intshi ezi-6, ngokukhula kwe-6-intshi yezixhobo ezixhasa ubuchwepheshe, iteknoloji ye-SiC substrate yasekhaya iphucula ngokuthe ngcembe uqoqosho lwe-intshi. Isikali semigca yemveliso yobungakanani obukhulu iya kubonakaliswa, kwaye isithuba sangoku sasekhaya se-6-intshi yemveliso yobuninzi sincinci ukuya kwiminyaka eyi-7.Ubungakanani obukhulu be-wafer bunokuzisa ukwanda kwenani leetshiphusi ezingatshatanga, ukuphucula izinga lesivuno, kunye nokunciphisa umlinganiselo we-chips edge, kunye neendleko zophando kunye nophuhliso kunye nelahleko yesivuno iya kugcinwa malunga ne-7%, ngaloo ndlela iphucula i-wafer. ukusetyenziswa.
Kusekho ubunzima obuninzi kuyilo lwesixhobo
Ukuthengiswa kwe-SiC diode kuphuculwe ngokuthe ngcembe, okwangoku, inani labavelisi basekhaya baye baqulunqa iimveliso ze-SiC SBD, i-voltage ephakathi kunye nephezulu yeemveliso ze-SiC SBD zinozinzo oluhle, kwi-OBC yesithuthi, ukusetyenziswa kwe-SiC SBD + SI IGBT ukufezekisa ukuzinza. ukuxinana kwangoku.Okwangoku, akukho zithintelo kwi-patent design yeemveliso ze-SiC SBD e-China, kwaye i-gap kunye namazwe angaphandle incinci.
I-SiC MOS isenobunzima obuninzi, kusekho umsantsa phakathi kwe-SiC MOS kunye nabavelisi baphesheya kweelwandle, kwaye iqonga lokuvelisa elichaphazelekayo lisakhiwa.Okwangoku, i-ST, i-Infineon, i-Rohm kunye nezinye i-600-1700V i-SiC MOS iphumelele imveliso eninzi kwaye yasayinwa kwaye yathunyelwa kunye namashishini amaninzi okuvelisa, ngelixa i-SiC MOS yoyilo lwangoku lugqityiwe ngokusisiseko, inani labavelisi boyilo basebenza ngeefabs. Inqanaba lokuhamba kwe-wafer, kwaye kamva ukuqinisekiswa kwabathengi kusafuna ixesha elithile, ke kusekho ixesha elide ukusuka kwintengiso enkulu.
Okwangoku, ulwakhiwo olucwangcisiweyo lukhetho oluqhelekileyo, kwaye uhlobo lomsele lusetyenziswa ngokubanzi kwintsimi yoxinzelelo oluphezulu kwixesha elizayo.Isakhiwo esicwangcisiweyo SiC MOS abavelisi baninzi, ulwakhiwo olucwangcisiweyo alulula ukuvelisa iingxaki zokuqhekeka kwendawo xa kuthelekiswa ne-groove, echaphazela ukuzinza komsebenzi, kwimarike engaphantsi kwe-1200V inoluhlu olubanzi lwexabiso lesicelo, kwaye isakhiwo seplani silingana. elula kwisiphelo sokuvelisa, ukuhlangabezana nokwenza kunye nokulawula iindleko imiba emibini.Isixhobo se-groove sinezibonelelo ze-parasitic inductance ephantsi kakhulu, isantya sokutshintsha ngokukhawuleza, ilahleko ephantsi kunye nokusebenza okuphezulu.
2--SiC wafer iindaba
Ukuveliswa kweemarike ze-silicon carbide kunye nokukhula kwentengiso, nikela ingqalelo ukungalingani kwesakhiwo phakathi kokubonelela kunye nemfuno
Ngokukhula okukhawulezayo kwemfuno yentengiso ye-high-frequency kunye ne-high-power power powers, umda we-electronic limit bottleneck we-silicon-based semiconductor izixhobo ziye zavela ngokuthe ngcembe, kwaye izixhobo ze-semiconductor zesizukulwana sesithathu ezimelwe yisilicon carbide (SiC) ziye ngokuthe ngcembe. babe ngamashishini.Ukusuka kwindawo yokujonga izinto ezibonakalayo, i-silicon carbide inamaxesha ama-3 ububanzi be-gap ye-silicon, amaxesha ali-10 amandla ombane wokuqhekeka okubalulekileyo, amaxesha ama-3 okuhamba kwe-thermal, ngoko ke izixhobo zamandla e-silicon carbide zifanelekile ukuphindaphinda okuphezulu, uxinzelelo oluphezulu, ubushushu obuphezulu kunye nezinye izicelo, kunceda ekuphuculeni ukusebenza kakuhle kunye nokuxinana kwamandla eenkqubo zombane zombane.
Okwangoku, ii-SiC diodes kunye ne-SiC MOSFET ziye zafudukela ngokuthe ngcembe kwimarike, kwaye kukho iimveliso ezivuthiweyo, phakathi kwazo ii-diode ze-SiC zisetyenziswa ngokubanzi endaweni ye-silicon-based diode kwezinye iindawo ngenxa yokuba abanayo inzuzo yokuhlawulela ukubuyisela umva;I-SiC MOSFET iphinda isetyenziswe ngokuthe ngcembe kwiimoto, ukugcinwa kwamandla, imfumba yokutshaja, i-photovoltaic kunye namanye amacandelo;Kwintsimi yokusetyenziswa kweemoto, umkhwa wokumodareyitha uya ubonakala ngakumbi nangakumbi, ukusebenza okuphezulu kwe-SiC kufuneka kuxhomekeke kwiinkqubo zokupakisha eziphambili ukuze kuphunyezwe, ngokobuchwephesha ngokutywinwa kweqokobhe eliqolileyo njengesiqhelo, ikamva okanye uphuhliso lokutywinwa kweplastiki. , iimpawu zayo zophuhliso ezilungiselelweyo zifanelekile ngakumbi kwiimodyuli zeSiC.
Ixabiso le-Silicon carbide liyancipha isantya okanye ngaphaya kokucinga
Ukusetyenziswa kwezixhobo ze-silicon carbide zilinganiselwe kakhulu ngeendleko eziphezulu, ixabiso le-SiC MOSFET phantsi kwinqanaba elifanayo liphindwe ka-4 ngaphezu kwe-IGBT yase-Si, oku kungenxa yokuba inkqubo ye-silicon carbide inzima, apho ukukhula I-crystal eyodwa kunye ne-epitaxial ayinzima nje kuphela kwindalo, kodwa kunye nesantya sokukhula sihamba kancinci, kwaye i-crystal processing enye kwi-substrate kufuneka ihambe ngenkqubo yokusika kunye nokupolisha.Ngokusekelwe kwiimpawu zayo eziphathekayo kunye nobuchwepheshe bokucwangcisa obungavuthiweyo, isivuno se-substrate yasekhaya singaphantsi kwama-50%, kwaye izinto ezahlukeneyo zikhokelela kwi-substrate ephezulu kunye namaxabiso e-epitaxial.
Nangona kunjalo, ukubunjwa kweendleko zezixhobo ze-silicon carbide kunye nezixhobo ezisekelwe kwi-silicon zichasene ne-diametrically, i-substrate kunye neendleko ze-epitaxial ze-akhawunti ye-channel yangaphambili ye-47% kunye ne-23% yesixhobo sonke ngokulandelelanayo, malunga ne-70%, uyilo lwesixhobo, ukuvelisa. kunye nokutywina amakhonkco e-akhawunti ye-back channel ye-30% kuphela, iindleko zokuvelisa izixhobo ezisekelwe kwi-silicon zigxininiswe kakhulu kwi-wafer yokwenziwa kwejelo elingasemva malunga ne-50%, kunye ne-akhawunti yeendleko ze-substrate kuphela i-7%.Isenzeko sexabiso le-silicon carbide industry chain upside down ithetha ukuba abavelisi be-epitaxy abaphezulu be-substrate banelungelo elingundoqo lokuthetha, eyona nto ingundoqo kwi-layout yamashishini asekhaya nakwamanye amazwe.
Ukusuka kwindawo yokujonga kwintengiso, ukunciphisa ixabiso le-silicon carbide, ukongeza ekuphuculeni i-silicon carbide ende yekristale kunye nenkqubo yokusika, kukwandisa ubungakanani be-wafer, ekwayindlela evuthiweyo yophuhliso lwe-semiconductor kwixesha elidlulileyo. Idatha ye-Wolfspeed ibonisa ukuba i-silicon carbide substrate iphucula ukusuka kwi-6 intshi ukuya kwi-8 intshi, ukuveliswa kwe-chip efanelekileyo kunokunyusa nge-80% -90%, kwaye kuncede ukuphucula isivuno.Inokunciphisa ixabiso leyunithi edibeneyo ngama-50%.
I-2023 yaziwa ngokuba yi "8-inch SiC yokuqala unyaka", kulo nyaka, abavelisi be-silicon carbide basekhaya nabangaphandle bayakhawulezisa uyilo lwe-8-intshi ye-silicon carbide, njengotyalo-mali oluhlanyayo lweWolfspeed ye-14.55 yeebhiliyoni zeedola zaseMelika zokwandiswa kwemveliso ye-silicon carbide, inxalenye ebalulekileyo yolwakhiwo lwe-8-intshi ye-SiC substrate yeplanti yokuvelisa, Ukuqinisekisa unikezelo lwentsimbi engenanto ye-200 mm yeSiC kwiinkampani ezininzi;I-Domestic Tianyue Advanced kunye ne-Tianke Heda baye basayina izivumelwano zexesha elide kunye ne-Infineon ukubonelela ngee-8-intshi ze-silicon carbide substrates kwixesha elizayo.
Ukuqala ukusuka kulo nyaka, i-silicon carbide iya kukhawuleza ukusuka kwi-intshi ezi-6 ukuya kwi-intshi ezi-8, iWolfspeed ilindele ukuba ngo-2024, ixabiso leyunithi yeyunithi ye-8 intshi ye-substrate xa kuthelekiswa nexabiso leyunithi ye-intshi ye-intshi eyi-6 ngo-2022 iya kuncitshiswa ngaphezu kwe-60% , kunye nokwehla kweendleko kuya kuvula ngakumbi imarike yesicelo, idatha yophando lweJi Bond Consulting yabonisa.Isabelo semarike yangoku yeemveliso ze-intshi ezi-8 zingaphantsi kwe-2%, kwaye isabelo semarike kulindeleke ukuba sikhule malunga ne-15% ngo-2026.
Ngapha koko, izinga lokuhla kwexabiso le-silicon carbide substrate lingadlula ingcamango yabantu abaninzi, intengiso yangoku ye-6-inch substrate yi-4000-5000 yuan/piece, xa kuthelekiswa nokuqala konyaka iwile kakhulu, ekulindeleke ukuba iwe ngaphantsi kwe-4000 yuan kunyaka ozayo, kuyafaneleka ukuba uqaphele ukuba abanye abavelisi ukuze bafumane imarike yokuqala, baye banciphisa ixabiso lokuthengisa kumgca weendleko ezingezantsi, Wavula imodeli yemfazwe yexabiso, ngokukodwa egxininiswe kwi-silicon carbide substrate. Unikezelo luye lwanele kwintsimi ye-voltage ephantsi, abavelisi basekhaya nabangaphandle bandisa ngamandla umthamo wemveliso, okanye bavumele i-silicon carbide substrate substrate igqithise inqanaba ngaphambi kokuba ucinge.
Ixesha lokuposa: Jan-19-2024