Indlela iSilicon Carbide (SiC) ewela ngayo kwiiglasi ze-AR?

Ngophuhliso olukhawulezileyo lwetekhnoloji ye-augmented reality (AR), iiglasi ezikrelekrele, njengomthwali obalulekileyo wetekhnoloji ye-AR, ziyatshintsha kancinci kancinci ukusuka kwingcamango ukuya kwinyani. Nangona kunjalo, ukwamkelwa ngokubanzi kweeglasi ezikrelekrele kusajongene nemingeni emininzi yobugcisa, ngakumbi ngokubhekiselele kwitekhnoloji yokubonisa, ubunzima, ukusasazwa kobushushu, kunye nokusebenza kwe-optical. Kwiminyaka yakutshanje, i-silicon carbide (SiC), njengezinto ezivelayo, isetyenziswa kakhulu kwizixhobo ezahlukeneyo ze-semiconductor yamandla kunye neemodyuli. Ngoku ingena kwicandelo leeglasi ze-AR njengezinto eziphambili. Isalathisi esiphezulu sokuqaqamba kwe-silicon carbide, iipropati ezilungileyo zokusasazwa kobushushu, kunye nobunzima obuphezulu, phakathi kwezinye iimpawu, zibonisa amandla abalulekileyo okusetyenziswa kwitekhnoloji yokubonisa, uyilo olukhaphukhaphu, kunye nokusasazwa kobushushu kweeglasi ze-AR. SinokubonelelaI-SiC wafer, edlala indima ebalulekileyo ekuphuculeni ezi ndawo. Ngezantsi, siza kuphonononga indlela i-silicon carbide enokuzisa ngayo utshintsho olukhulu kwiiglasi ezikrelekrele ukusuka kwiinkalo zeempawu zayo, impumelelo yetekhnoloji, usetyenziso lwemarike, kunye namathuba exesha elizayo.

  I-SiC wafer

Iipropati kunye neenzuzo zeSilicon Carbide

I-silicon carbide sisixhobo se-semiconductor esibanzi esine-bandgap eneempawu ezintle ezifana nokuqina okuphezulu, ukuqhuba okuphezulu kobushushu, kunye ne-refractive index ephezulu. Ezi mpawu zisinika amandla amakhulu okusetyenziswa kwizixhobo ze-elektroniki, izixhobo ze-optical, kunye nolawulo lobushushu. Ngokukodwa kwicandelo leeglasi ezikrelekrele, iingenelo ze-silicon carbide zibonakala kakhulu kwezi zinto zilandelayo:

 

Isalathisi Esiphezulu Sokuqaqambisa: I-silicon carbide inesalathisi sokuqaqambisa esingaphezulu kwe-2.6, esiphezulu kakhulu kunezixhobo zemveli ezifana ne-resin (1.51-1.74) kunye neglasi (1.5-1.9). Isalathisi esiphakamileyo sokukhanya sithetha ukuba i-silicon carbide inokuthintela ngakumbi ukusasazeka kokukhanya, inciphise ukulahleka kwamandla okukhanya, ngaloo ndlela iphucula ukukhanya kwesibonisi kunye nembono yentsimi (FOV). Umzekelo, iiglasi ze-Meta ze-Orion AR zisebenzisa itekhnoloji ye-silicon carbide waveguide, ifikelela kwimbono ye-degrees ezingama-70, idlula kakhulu imbono ye-degrees ezingama-40 zezinto zeglasi zemveli.

 

Ukusasazwa kobushushu okugqwesileyo: I-silicon carbide inokuqhuba ubushushu ngokuphindwe kalikhulu kuneglasi eqhelekileyo, nto leyo evumela ukuhanjiswa kobushushu ngokukhawuleza. Ukusasazwa kobushushu yingxaki ephambili kwiiglasi ze-AR, ingakumbi ngexesha lokuboniswa kokukhanya okuphezulu kunye nokusetyenziswa ixesha elide. Iilensi ze-silicon carbide zinokuhambisa ubushushu obuveliswa zizinto ezibonakalayo ngokukhawuleza, nto leyo ephucula uzinzo kunye nobomi besixhobo. Singabonelela nge-SiC wafer eqinisekisa ulawulo olusebenzayo lobushushu kwezo zicelo.

 

Ukuqina Okuphezulu Nokumelana Nokunxiba: I-Silicon carbide yenye yezona zinto zinzima kakhulu ezaziwayo, ilandela idayimani kuphela. Oku kwenza iilensi ze-silicon carbide zingagugi kakhulu, zilungele ukusetyenziswa imihla ngemihla. Ngokwahlukileyo koko, izinto zeglasi kunye ne-resin zinokuba nemikrwelo, nto leyo echaphazela amava omsebenzisi.

 

Isiphumo Sokulwa Nomnyama: Izixhobo zeglasi zemveli kwiiglasi ze-AR zivame ukuvelisa isiphumo somnyama, apho ukukhanya okungqongileyo kubonakalisa kumphezulu we-waveguide, kudala iipateni zokukhanya kombala oguqukayo. I-silicon carbide ingayisusa ngempumelelo le ngxaki ngokuphucula isakhiwo se-grating, ngaloo ndlela iphucula umgangatho wokubonisa kwaye isuse isiphumo somnyama obangelwa kukubonakaliswa kokukhanya okungqongileyo kumphezulu we-waveguide.

 I-SiC wafer1

Uphuhliso lweTekhnoloji yeSilicon Carbide kwiiglasi ze-AR

Kwiminyaka yakutshanje, uphuhliso lwetekhnoloji ye-silicon carbide kwiiglasi ze-AR lugxile kakhulu ekuphuhlisweni kweelensi ze-diffraction waveguide. I-diffraction waveguide yitekhnoloji yokubonisa edibanisa i-diffraction phenomenon yokukhanya kunye nezakhiwo ze-waveguide ukusasaza imifanekiso eveliswa zizinto ezibonakalayo nge-grating kwilensi. Oku kunciphisa ubukhulu belensi, okwenza iiglasi ze-AR zibonakale zisondele kwiiglasi zamehlo eziqhelekileyo.

 微信图片_20250331132327

Ngo-Okthobha ka-2024, iMeta (eyayisakuba yiFacebook) yazisa ukusetyenziswa kwe-silicon carbide-etched waveguides kunye ne-microLEDs kwiiglasi zayo ze-Orion AR, isombulula iingxaki ezibalulekileyo kwiindawo ezifana nebala lokujonga, ubunzima, kunye nezinto ezibonakalayo. Isazinzulu se-optical seMeta uPascual Rivera sathi itekhnoloji ye-silicon carbide waveguide itshintshe ngokupheleleyo umgangatho wokubonisa weiglasi ze-AR, itshintsha amava ukusuka "kwiindawo zokukhanya kwe-rainbow ezifana ne-disco-ball" ukuya "kumava athuleyo afana neholo yekonsathi."

 

NgoDisemba ka-2024, i-XINKEHUI yaphuhlisa ngempumelelo i-substrate yokuqala ye-silicon carbide single crystal ene-12-intshi ephezulu emsulwa, nto leyo ebonisa impumelelo enkulu kwicandelo le-substrates ezinkulu. Le teknoloji iya kukhawulezisa ukusetyenziswa kwe-silicon carbide kwiimeko ezintsha zokusetyenziswa ezifana neeglasi ze-AR kunye nee-heat sinks. Umzekelo, i-silicon carbide wafer ene-12-intshi ye-silicon carbide inokuvelisa iilensi ze-AR ezi-8-9, nto leyo ephucula kakhulu ukusebenza kakuhle kwemveliso. Singabonelela nge-SiC wafer ukuxhasa ezo zicelo kushishino lweeglasi ze-AR.

 

Kutshanje, umthengisi we-silicon carbide substrate uXINKEHUI usebenzisane nenkampani yezixhobo ze-micro-nano optoelectronic iMOD MICRO-NANO ukuseka i-joint venture egxile kuphuhliso kunye nokukhuthazwa kwemarike yetekhnoloji ye-AR diffraction waveguide lens. I-XINKEHUI, ngobuchule bayo bobuchwephesha kwi-silicon carbide substrates, iya kubonelela nge-substrates ezikumgangatho ophezulu ze-MOD MICRO-NANO, eziya kusebenzisa iingenelo zayo kwitekhnoloji ye-micro-nano optical kunye nokucubungula i-AR waveguide ukuze kuphuculwe ngakumbi ukusebenza kwe-diffraction waveguide. Le ntsebenziswano kulindeleke ukuba ikhawulezise impumelelo yetekhnoloji kwiiglasi ze-AR, ikhuthaze intshukumo yeshishini ukuya ekusebenzeni okuphezulu kunye noyilo olukhaphukhaphu.

 I-SiC wafer2

Kumboniso we-SPIE AR|VR|MR ka-2025, i-MOD MICRO-NANO iveze iilensi zayo zeglasi ze-silicon carbide AR zesizukulwana sesibini, ezinobunzima obuyi-2.7 grams kuphela kwaye zinobukhulu obuyi-0.55 milimitha, zikhaphukhaphu kuneeglasi zelanga eziqhelekileyo, zinika abasebenzisi amava okunxiba angabonakaliyo, zifezekisa uyilo "olukhaphukhaphu" ngokwenene.

 

Amatyala okusetyenziswa kweSilicon Carbide kwiiglasi ze-AR

Kwinkqubo yokwenziwa kwe-silicon carbide waveguides, iqela likaMeta loyise imingeni yetekhnoloji yokukrola ethambekileyo. Umphathi wophando uNihar Mohanty uchaze ukuba ukukrola okuthambekileyo yitekhnoloji yokukrola engeyoyendabuko ekrola imigca kwi-engile ethambekileyo ukuze kuphuculwe ukuhlanganiswa kokukhanya kunye nokusebenza kakuhle kokukrola. Olu phuhliso lubeke isiseko sokwamkelwa ngobuninzi kwe-silicon carbide kwiiglasi ze-AR.

 

Iiglasi ze-Orion AR zeMeta ziyindlela emele ubuchwepheshe be-silicon carbide kwi-AR. Ngokusebenzisa ubuchwepheshe be-silicon carbide waveguide, i-Orion ifikelela kwimbono ye-degree ezingama-70 kwaye ijongana ngempumelelo nemiba efana ne-ghosting kunye ne-rainbow effect.

 

UGiuseppe Carafiore, inkokheli yetekhnoloji ye-AR waveguide kaMeta, uqaphele ukuba i-silicon carbide ephezulu yokurhawuzelela kunye nokuqhuba kobushushu kwenza ukuba ibe yinto efanelekileyo kwiiglasi ze-AR. Emva kokukhetha izinto, umngeni olandelayo yayikukuphuhlisa i-waveguide, ngakumbi inkqubo yokurhawuzelela ethe tyaba ye-grating. UCarafiore uchaze ukuba i-grating, enoxanduva lokudibanisa ukukhanya ngaphakathi nangaphandle kwelensi, kufuneka isebenzise i-slanted etching. Imigca ethe tyaba ayilungelelaniswanga ngokuthe nkqo kodwa isasazwa kwi-engile etyebileyo. UNihar Mohanty wongeze ngelithi babeliqela lokuqala kwihlabathi liphela ukufezekisa i-slanted etching ngqo kwizixhobo. Ngo-2019, uNihar Mohanty kunye neqela lakhe bakhe umgca wemveliso ozinikeleyo. Ngaphambi koko, akukho zixhobo zazifumaneka zokurhawuzelela ii-waveguide ze-silicon carbide, kwaye ubuchwepheshe babungenakwenzeka ngaphandle kwelebhu.

 I-4H-N SiC Wafer

 

Imingeni kunye namathemba exesha elizayo eSilicon Carbide

Nangona i-silicon carbide ibonisa amandla amakhulu kwiiglasi ze-AR, ukusetyenziswa kwayo kusajongene nemingeni eliqela. Okwangoku, izinto ze-silicon carbide zibiza kakhulu ngenxa yokukhula kwayo kancinci kunye nokucubungula okunzima. Umzekelo, ilensi enye ye-silicon carbide yeeglasi ze-Meta's Orion AR ixabisa i-$1,000, nto leyo eyenza kube nzima ukuhlangabezana neemfuno zemarike yabathengi. Nangona kunjalo, ngophuhliso olukhawulezayo lweshishini lezithuthi zombane, ixabiso le-silicon carbide liyehla kancinci kancinci. Ngaphezu koko, uphuhliso lwezixhobo ezinkulu (ezifana nee-wafers ze-intshi ezili-12) luya kuqhuba ngakumbi ukunciphisa iindleko kunye nokuphucula ukusebenza kakuhle.

 

Ubunzima obukhulu be-silicon carbide bukwenza kube nzima ukuyicubungula, ngakumbi ekwenziweni kwesakhiwo se-micro-nano, nto leyo ekhokelela kwizinga eliphantsi lemveliso. Kwixesha elizayo, ngentsebenziswano enzulu phakathi kwababoneleli be-silicon carbide substrate kunye nabavelisi be-micro-nano optical, le ngxaki kulindeleke ukuba isonjululwe. Ukusetyenziswa kwe-silicon carbide kwiiglasi ze-AR kusekwinqanaba lokuqala, kufuna iinkampani ezininzi ukuba zityale imali kuphando lwe-silicon carbide ye-optical-grade kunye nophuhliso lwezixhobo. Iqela le-Meta lilindele ukuba abanye abavelisi baqale ukuphuhlisa izixhobo zabo, njengoko iinkampani ezininzi zityala imali kuphando kunye nezixhobo ze-silicon carbide ye-optical-grade, kokukhona inkqubo ye-ecosystem yeshishini leeglasi ze-AR yomthengi iya kuba namandla ngakumbi.

 

Isiphelo

I-silicon carbide, ene-refractive index yayo ephezulu, ukusasazwa kobushushu okugqwesileyo, kunye nobunzima obuphezulu, iba yinto ebalulekileyo kwicandelo leeglasi ze-AR. Ukususela kwintsebenziswano phakathi kwe-XINKEHUI kunye ne-MOD MICRO-NANO ukuya ekusetyenzisweni ngempumelelo kwe-silicon carbide kwiiglasi ze-Orion AR ze-Meta, amandla e-silicon carbide kwiiglasi ezikrelekrele abonakaliswe ngokupheleleyo. Nangona kukho imingeni efana neendleko kunye nemiqobo yobugcisa, njengoko uthotho lweshishini lukhula kwaye itekhnoloji iqhubeka ihambela phambili, i-silicon carbide kulindeleke ukuba ikhanye kwicandelo leeglasi ze-AR, iqhubele iiglasi ezikrelekrele ekusebenzeni okuphezulu, ubunzima obulula, kunye nokwamkelwa ngokubanzi. Kwixesha elizayo, i-silicon carbide inokuba yinto ephambili kushishino lwe-AR, ingenise ixesha elitsha leeglasi ezikrelekrele.

 

Amandla e-silicon carbide awapheleli kwiiglasi ze-AR kuphela; usetyenziso lwayo oluhambelanayo kwi-elektroniki kunye ne-photonics lukwabonisa amathuba amakhulu. Umzekelo, ukusetyenziswa kwe-silicon carbide kwi-quantum computing kunye nezixhobo ze-elektroniki ezinamandla aphezulu kuyahlolwa ngenkuthalo. Njengoko ubuchwepheshe buqhubeka kwaye iindleko zincipha, i-silicon carbide kulindeleke ukuba idlale indima ebalulekileyo kwiinkalo ezininzi, ikhawulezise uphuhliso lwamashishini anxulumene nayo. Singabonelela nge-SiC wafer kwizicelo ezahlukeneyo, sixhasa uphuhliso kwitekhnoloji ye-AR nangaphezulu.

 

Imveliso enxulumeneyo

I-8Inch 200mm 4H-N SiC Wafer Udidi lophando oluqhutywayo

 I-4H-N SiC Wafer2

 

I-Sic Substrate Silicon Carbide Wafer 4H-N Uhlobo loBulukhuni obuphezulu bokugqwala Ukumelana nokugqwala kwePrime Grade Polishing

I-4H-N SiC Wafer1


Ixesha lokuthumela: Epreli-01-2025