Iikristale ezingatshatanga zinqabile ngokwendalo, kwaye nokuba ziyenzeka, zihlala zincinci kakhulu—ngokuqhelekileyo kwisikali se-millimeter (mm)—kwaye kunzima ukuzifumana. Iidayimani ezixeliweyo, ii-emerald, ii-agate, njl.njl., ngokubanzi azingeni kwimarike, ingasathethwa ke ngezicelo zoshishino; uninzi lwazo luboniswa kwiimyuziyam ukuze kuboniswe. Nangona kunjalo, ezinye iikristale ezingatshatanga zixabisa kakhulu kwimizi-mveliso, njenge-silicon yekristale enye kushishino lwesekethe edibeneyo, isafire esetyenziswa kakhulu kwiilensi ze-optical, kunye ne-silicon carbide, efumana amandla kwi-semiconductors yesizukulwana sesithathu. Amandla okuvelisa ezi kristale zingatshatanga ngobuninzi kwimizi-mveliso awameli nje kuphela amandla kubuchwepheshe bemizi-mveliso nesayensi kodwa ikwaluphawu lobutyebi. Imfuneko ephambili yokuveliswa kwekristale enye kushishino kubukhulu obukhulu, njengoko oku kubalulekile ekunciphiseni iindleko ngokufanelekileyo. Apha ngezantsi kukho ezinye iikristale ezingaqhelekanga ezifumaneka kwimarike:
1. Ikristale Eyodwa Yesafire
Ikristale enye yesafire ibhekisa kwi-α-Al₂O₃, enenkqubo yekristale enama-hexagonal, ubulukhuni be-Mohs obuyi-9, kunye neempawu zekhemikhali ezizinzileyo. Ayinyibiliki kwizinto ezirhabaxa ze-acidic okanye ze-alkaline, imelana namaqondo obushushu aphezulu, kwaye ibonakalisa ukukhanya okugqwesileyo, ukuqhuba kobushushu, kunye nokufakelwa kombane.
Ukuba ii-ion ze-Al kwikristale zithathelwa indawo zii-ion ze-Ti kunye ne-Fe, ikristale ibonakala iluhlaza okwesibhakabhaka kwaye ibizwa ngokuba yi-sapphire. Ukuba ithathelwa indawo zii-ion ze-Cr, ibonakala ibomvu kwaye ibizwa ngokuba yi-ruby. Nangona kunjalo, i-sapphire yemizi-mveliso yi-α-Al₂O₃ ecocekileyo, ayinambala kwaye icacile, ayinangcoliseko.
I-sapphire yemizi-mveliso idla ngokuba zii-wafers, ezinobukhulu obuyi-400–700 μm kunye nobubanzi obuyi-4–8 intshi. Ezi zaziwa ngokuba zii-wafers kwaye zisikwe kwii-ingots zekristale. Kuboniswe ngezantsi yi-ingot esandula ukutsalwa evela kwisithando sekristale esinye, esingakacolwa okanye esikiweyo.
Ngowama-2018, iJinghui Electronic Company e-Inner Mongolia yaphumelela ukukhulisa ikristale yesafire enkulu kakhulu emhlabeni enobunzima obuyi-450 kg. Ikristale yesafire enkulu ngaphambili kwihlabathi liphela yayiyikristale enobunzima obuyi-350 kg eyenziwe eRashiya. Njengoko kubonwe kumfanekiso, le kristale inobume obuqhelekileyo, icacile ngokupheleleyo, ayinazimfanta kunye nemida yeenkozo, kwaye inamaqamza ambalwa.
2. I-Silicon e-Single-Crystal
Okwangoku, i-silicon enekristale enye esetyenziselwa iitships zesekethe ezihlanganisiweyo inobumsulwa obuyi-99.999999% ukuya kwi-99.99999999% (9–11 nines), kwaye i-ingot ye-silicon enobunzima obuyi-420 kg kufuneka igcine isakhiwo esigqibeleleyo esifana nedayimani. Kwindalo, nedayimani ene-carat enye (200 mg) ayifumaneki lula.
Imveliso yehlabathi ye-single-crystal silicon ingots ilawulwa ziinkampani ezintlanu ezinkulu: iShin-Etsu yaseJapan (28.0%), iSUMCO yaseJapan (21.9%), iGlobalWafers yaseTaiwan (15.1%), iSK Siltron yaseMzantsi Korea (11.6%), kunye neSiltronic yaseJamani (11.3%). Kwaneyona mveliso inkulu ye-semiconductor wafer kwilizwekazi laseTshayina, i-NSIG, iphethe kuphela malunga ne-2.3% yesabelo semarike. Nangona kunjalo, njengentsha, amandla ayo akufuneki athathwe lula. Ngo-2024, i-NSIG iceba ukutyala imali kwiprojekthi yokuphucula imveliso ye-silicon wafer ye-300 mm kwiisekethe ezidibeneyo, kunye notyalo-mali oluqikelelweyo lwe-¥13.2 yeebhiliyoni.
Njengezinto ezisetyenziswa kwiitships, ii-ingots ze-silicon ezinekristale enye ezicocekileyo kakhulu ziyatshintsha ukusuka kwii-intshi ezi-6 ukuya kwii-intshi ezili-12. Ii-chip foundries eziphambili zamazwe ngamazwe, ezifana ne-TSMC kunye ne-GlobalFoundries, zenza iitships ezivela kwii-wafers ze-silicon eziyi-12 intshi zibe zezona ziphambili kwimarike, ngelixa ii-wafers eziyi-8 intshi zisuswa kancinci kancinci. Inkokeli yasekhaya i-SMIC isasebenzisa ii-wafers eziyi-6 intshi. Okwangoku, yi-SUMCO yaseJapan kuphela enokuvelisa ii-wafers ze-12 intshi ezicocekileyo kakhulu.
3. I-Gallium Arsenide
Iiwafer zeGallium arsenide (GaAs) zizinto ezibalulekileyo ze-semiconductor, kwaye ubungakanani bazo yiparameter ebalulekileyo kwinkqubo yokulungiselela.
Okwangoku, ii-wafers zeGaAs zihlala ziveliswa ngobukhulu obuzii-intshi ezi-2, ii-intshi ezi-3, ii-intshi ezi-4, ii-intshi ezi-6, ii-intshi ezi-8, kunye nee-intshi ezili-12. Phakathi kwezi, ii-wafers ze-intshi ezi-6 zezinye zezona nkcukacha zisetyenziswa kakhulu.
Ububanzi obukhulu beekristale ezikhuliswe ngendlela ye-Horizontal Bridgman (HB) ngokubanzi zii-intshi ezi-3, ngelixa indlela ye-Liquid-Encapsulated Czochralski (LEC) inokuvelisa iikristale ezi-1 ukuya kuthi ga kwii-intshi ezili-12 ububanzi. Nangona kunjalo, ukukhula kwe-LEC kufuna iindleko eziphezulu zezixhobo kwaye kuvelisa iikristale ezingafaniyo kunye noxinano oluphezulu lokusasazeka. Iindlela ze-Vertical Gradient Freeze (VGF) kunye ne-Vertical Bridgman (VB) okwangoku zinokuvelisa iikristale ezi-1 ukuya kuthi ga kwii-intshi ezi-8 ububanzi, ezinesakhiwo esifanayo kunye noxinano oluphantsi lokusasazeka.
Itekhnoloji yokuvelisa ii-wafers ezipolishiweyo ze-GaAs ezizi-intshi ezi-4 kunye nezi-intshi ezi-6 ilawulwa kakhulu ziinkampani ezintathu: iSumitomo Electric Industries yaseJapan, iFreiberger Compound Materials yaseJamani, kunye ne-US AXT. Ngowama-2015, ii-substrates ze-6-intshi zazisele zingaphezulu kwe-90% yesabelo semarike.
Ngowama-2019, imakethi yehlabathi yeGaAs substrate yayilawulwa yiFreiberger, iSumitomo, kunye neBeijing Tongmei, enezabelo zemakethi ezingama-28%, 21%, kunye ne-13%, ngokwahlukeneyo. Ngokutsho koqikelelo lwenkampani ecebisayo iYole, ukuthengiswa kwehlabathi kweGaAs substrates (eziguqulwe zaba zii-intshi ezi-2) kufikelele malunga neziqwenga ezingama-20 ezigidi ngo-2019 kwaye kuqikelelwa ukuba ziya kudlula iziqwenga ezingama-35 ezigidi ngo-2025. Imakethi yehlabathi yeGaAs substrate yayixabisa malunga ne-$200 yezigidi ngo-2019 kwaye kulindeleke ukuba ifikelele kwi-$348 yezigidi ngo-2025, kunye nezinga lokukhula lonyaka elihlanganisiweyo (CAGR) le-9.67% ukusuka ngo-2019 ukuya ku-2025.
4. I-Silicon Carbide Single Crystal
Okwangoku, imakethi inokuxhasa ngokupheleleyo ukukhula kweekristale ze-silicon carbide (SiC) ezine-intshi ezi-2 kunye ne-intshi ezi-3 ububanzi. Iinkampani ezininzi zibike ukukhula okuphumelelayo kweekristale ze-SiC ezine-intshi ezi-4H, nto leyo ephawula impumelelo yeTshayina kumanqanaba akumgangatho wehlabathi kubuchwepheshe bokukhula kweekristale zeSiC. Nangona kunjalo, kusekho umsantsa omkhulu ngaphambi kokuba kuthengiswe.
Ngokubanzi, ii-SiC ingots ezikhuliswe ngeendlela ze-liquid-phase zincinci, kwaye ubukhulu bazo bufikelela kwisentimitha. Oku kukwangunobangela wexabiso eliphezulu lee-SiC wafers.
I-XKH igxile kwi-R&D kunye nokulungiswa ngokwezifiso kwezinto ze-semiconductor eziphambili, kubandakanya isafire, i-silicon carbide (SiC), ii-silicon wafers, kunye neeseramikhi, ezigubungela uthotho lwexabiso olupheleleyo ukusuka ekukhuleni kwekristale ukuya ekuchwethezeni ngokuchanekileyo. Sisebenzisa amandla adibeneyo emizi-mveliso, sinikezela ngee-sapphire wafers ezisebenza kakuhle, ii-silicon carbide substrates, kunye nee-silicon wafers ezicocekileyo kakhulu, ezixhaswa zizisombululo ezenzelwe wena ezifana nokusika ngokwezifiso, ukugquma umphezulu, kunye nokuveliswa kwejometri eyinkimbinkimbi ukuhlangabezana neemfuno ezinzulu zokusingqongileyo kwiinkqubo ze-laser, ukuveliswa kwe-semiconductor, kunye nokusetyenziswa kwamandla avuselelekayo.
Ngokulandela imigangatho yomgangatho, iimveliso zethu zinobuchane be-micron-level, uzinzo lobushushu olungaphezulu kwe-1500°C, kunye nokumelana nokugqwala okuphezulu, okuqinisekisa ukuthembeka kwiimeko ezinzima zokusebenza. Ukongeza, sinikezela nge-quartz substrates, izinto zesinyithi/ezingezizo zesinyithi, kunye nezinye izinto ze-semiconductor-grade, okuvumela utshintsho olungenamthungo ukusuka kwi-prototyping ukuya kwimveliso enkulu kubathengi kumashishini onke.
Ixesha lokuthumela: Agasti-29-2025