Izixhobo zokuThintsa iiWafers ze-4 Inch-12 Inch Sapphire/SiC/Si Wafers Processing

Inkcazo emfutshane:

Izixhobo Zokunciphisa I-Wafer zizixhobo ezibalulekileyo ekuveliseni i-semiconductor zokunciphisa ubukhulu be-wafer ukuze kuphuculwe ulawulo lobushushu, ukusebenza kombane, kunye nokusebenza kakuhle kokupakisha. Ezi zixhobo zisebenzisa ukugaya ngoomatshini, ukupolishwa ngoomatshini ngamakhemikhali (i-CMP), kunye nobuchwepheshe bokugcada okomileyo/okumanzi ukuze kufezekiswe ulawulo lobukhulu oluchanekileyo (± 0.1 μm) kunye nokuhambelana nee-wafers eziyi-4–12-intshi. Iinkqubo zethu zixhasa ukujongwa kwe-C/A-plane kwaye zenzelwe usetyenziso oluphambili olufana nee-3D ICs, izixhobo zamandla (ii-IGBT/MOSFET), kunye nee-sensors ze-MEMS.

I-XKH ibonelela ngezisombululo ezipheleleyo, kuquka izixhobo ezenzelwe wena (ukulungiswa kwe-wafer ye-intshi ezi-2–12), ukulungiswa kwenkqubo (ubuninzi beziphene <100/cm²), kunye noqeqesho lobugcisa.

Thumela i-imeyile kuthi

Iimbonakalo

Umgaqo Wokusebenza

Inkqubo yokunciphisa i-wafer isebenza ngamanqanaba amathathu:
Ukusila Okurhabaxa: Ivili ledayimani (ubukhulu begrit buyi-200–500 μm) lisusa i-50–150 μm yezinto kwi-3000–5000 rpm ukuze linciphise ngokukhawuleza ubukhulu.
Ukusila Okuncinci: Ivili elincinci (ubukhulu begrit buyi-1–50 μm) linciphisa ubukhulu bube yi-20–50 μm kwi-<1 μm/s ukuze kuncitshiswe umonakalo ongaphantsi komhlaba.
Ukupholisha (CMP): I-slurry yekhemikhali-yoomatshini isusa umonakalo oshiyekileyo, ifikelela kwi-Ra <0.1 nm.

Izixhobo ezihambelanayo

I-Silicon (Si): Isemgangathweni kwii-wafers ze-CMOS, zincitshiswe zibe yi-25 μm ukuze zibekwe kwi-3D stacking.
I-Silicon Carbide (SiC): Ifuna amavili edayimani akhethekileyo (uxinzelelo lwedayimani oluyi-80%) ukuze kuhlale ubushushu.
I-Sapphire (Al₂O₃): Incitshiswe ukuya kwi-50 μm ukuze isetyenziswe kwi-UV LED.

Izinto eziphambili zeNkqubo

1. Inkqubo yokuGcoba
I-Dual-Axis Grinder: Idibanisa i-grinding erhabaxa/encinci kwiqonga elinye, inciphisa ixesha lokujikeleza nge-40%.
I-Aerostatic Spindle: Ububanzi besantya se-0–6000 rpm kunye ne-radial runout ye-<0.5 μm.

2. Inkqubo yokuphatha iWafer
I-Vacuum Chuck: Amandla okugcina >50 N anokuchaneka kokubeka ±0.1 μm.
Ingalo yeRobotic: Ithutha iiwafers eziyi-4–12-intshi ngesantya se-100 mm/s.

3. Inkqubo yoLawulo
I-Laser Interferometry: Ukubeka esweni ubukhulu ngexesha langempela (isisombululo yi-0.01 μm).
Impendulo Eqhutywa yi-AI: Iqikelela ukuguguleka kwamavili kwaye ilungisa iiparameter ngokuzenzekelayo.

4. Ukupholisa kunye nokucoca
Ukucoca nge-Ultrasonic: Kususa amasuntswana angaphezu kwe-0.5 μm ngokusebenza kakuhle kwe-99.9%.
Amanzi anyibilikisiweyo: Apholisa i-wafer ukuya kuthi ga kwi-<5°C ngaphezulu komoya.

Iingenelo ezingundoqo

1. Ubuchule obuphezulu kakhulu: TTV (Utshintsho loBukhulu obupheleleyo) <0.5 μm, WTW (Utshintsho loBukhulu obungaphakathi kweWafer) <1 μm.

2. Ukuhlanganiswa kweenkqubo ezininzi: Kudibanisa ukugaya, i-CMP, kunye nokugrumba kweplasma kumatshini omnye.

3. Ukuhambelana kwezinto:
I-Silicon: Ukunciphisa ukutyeba ukusuka kwi-775 μm ukuya kwi-25 μm.
I-SiC: Ifikelela kwi-<2 μm TTV kwizicelo ze-RF.
IiWafers ezifakwe i-Doped: Iiwafers ze-InP ezifakwe i-Phosphorus ezine-resistivity drift engaphantsi kwe-5%.

4. Ukuziqhelanisa okuKhawulezayo: Ukuhlanganiswa kwe-MES kunciphisa iimpazamo zomntu ngama-70%.

5. Ukonga Amandla: Ukusetyenziswa kwamandla okuphantsi ngama-30% ngokusebenzisa ibhuleki yokuvuselela.

Izicelo eziphambili

1. Ukupakisha Okuphambili
• Ii-IC ze-3D: Ukunciphisa i-wafer kwenza ukuba i-logic/memory chips zibekwe ngokuthe nkqo (umz., ii-HBM stacks), zifikelele kwi-bandwidth ephezulu nge-10× kunye nokusetyenziswa kwamandla okuncitshisiweyo nge-50% xa kuthelekiswa nezisombululo ze-2.5D. Ezi zixhobo zixhasa i-hybrid bonding kunye ne-TSV (Through-Silicon Via) integration, ebalulekileyo kwiiprosesa ze-AI/ML ezifuna i-interconnect pitch engaphantsi kwe-10 μm. Umzekelo, ii-wafers ze-intshi ezili-12 ezincitshiswe ukuya kwi-25 μm zivumela ukuhlanganisa iileya ezi-8+ ngelixa zigcina i-warpage engaphantsi kwe-1.5%, ebalulekileyo kwiinkqubo ze-LiDAR zeemoto.

• Ukupakisha i-Fan-Out: Ngokunciphisa ubukhulu be-wafer ukuya kwi-30 μm, ubude bonxibelelwano bufinyezwa nge-50%, kunciphisa ukulibaziseka kwesignali (<0.2 ps/mm) kwaye kuvumela ii-chiplets ezi-0.4 mm ezincinci kakhulu kwiiSoCs eziphathwayo. Le nkqubo isebenzisa ii-algorithms zokugaya ezihlawulelwa luxinzelelo ukuthintela i-warpage (>50 μm ulawulo lwe-TTV), ukuqinisekisa ukuthembeka kwizicelo ze-RF ezisebenza rhoqo.

2. Izixhobo zombane
• Iimodyuli ze-IGBT: Ukuncitshiswa ukuya kwi-50 μm kunciphisa ukumelana nobushushu ukuya kwi-<0.5°C/W, okuvumela ii-1200V SiC MOSFETs ukuba zisebenze kumaqondo obushushu e-200°C junction. Izixhobo zethu zisebenzisa ukugaya okunezigaba ezininzi (okuqinileyo: 46 μm grit → fine: 4 μm grit) ukuphelisa umonakalo ongaphantsi komhlaba, kufezekisa imijikelo engaphezulu kwe-10,000 yokuthembeka kokujikeleza kobushushu. Oku kubalulekile kwii-EV inverters, apho ii-wafers ze-SiC ezingama-10 μm ubukhulu ziphucula isantya sokutshintsha nge-30%.
• Izixhobo zamandla zeGaN-on-SiC: Ukunciphisa i-wafer ukuya kwi-80 μm kuphucula ukuhamba kwe-electron (μ > 2000 cm²/V·s) kwi-650V GaN HEMTs, kunciphisa ilahleko zokuqhuba nge-18%. Le nkqubo isebenzisa i-laser-assisted dicing ukuthintela ukuqhekeka ngexesha lokunciphisa, ifezekisa <5 μm edge chipping kwii-RF power amplifiers.

3. I-Optoelectronics
• Ii-LED zeGaN-on-SiC: Ii-substrates zesafire ezingama-50 μm ziphucula ukusebenza kakuhle kokukhupha ukukhanya (LEE) ukuya kwi-85% (xa kuthelekiswa ne-65% kwii-wafers ezingama-150 μm) ngokunciphisa ukubanjwa kwe-photon. Ulawulo lwe-TTV oluphantsi kakhulu lwezixhobo zethu (<0.3 μm) luqinisekisa ukukhutshwa kwe-LED okufanayo kwii-wafers ezingama-12 intshi, nto leyo ebalulekileyo kwizibonisi zeMicro-LED ezifuna ukufana kwe-wavelength engama-<100nm.
• IiSilicon Photonics: Ii-silicon wafers ezinobukhulu obuyi-25μm zenza ukuba ilahleko yokusasazeka ibe ngaphantsi nge-3 dB/cm kwii-waveguides, nto leyo ebalulekileyo kwii-transceivers ze-optical ze-1.6 Tbps. Le nkqubo idibanisa ukuthambisa kwe-CMP ukunciphisa uburhabaxa bomphezulu ukuya kwi-Ra <0.1 nm, nto leyo ephucula ukusebenza kakuhle kwe-coupling nge-40%.

4. Ii-MEMS Sensors
• Ii-Accelerometers: Ii-silicon wafers ezingama-25 μm zifikelela kwi-SNR >85 dB (xa kuthelekiswa ne-75 dB kwii-wafers ezingama-50 μm) ngokwandisa uvakalelo lokuhamba kobungqina. Inkqubo yethu yokugaya ene-dual-axis ihlawulela i-gradients yoxinzelelo, iqinisekisa ukuba uvakalelo luhamba nge-<0.5% ngaphezulu kwe--40°C ukuya kwi-125°C. Izicelo ziquka ukufunyanwa kweengozi zeemoto kunye nokulandelela intshukumo ye-AR/VR.

• IiSensors zoxinzelelo: Ukuncitshiswa ukuya kwi-40 μm kuvumela umlinganiselo weebha ezi-0–300 nge-hysteresis ye-FS engaphantsi kwe-0.1%. Ukusebenzisa i-bonding yexeshana (ii-glass carriers), le nkqubo ithintela ukwaphuka kwe-wafer ngexesha lokugrumba umva, ifezekisa ukunyamezela uxinzelelo olungaphezulu kwe-1 μm kwiisensors ze-IoT zoshishino.

• Intsebenziswano yoBugcisa: Izixhobo zethu zokunciphisa i-wafer zidibanisa ukugaya ngoomatshini, i-CMP, kunye nokugrumba ngeplasma ukujongana nemingeni eyahlukeneyo yezinto (i-Si, i-SiC, i-Sapphire). Umzekelo, i-GaN-on-SiC ifuna ukugaya okuxutyiweyo (amavili edayimani + i-plasma) ukulinganisela ubulukhuni kunye nokwanda kobushushu, ngelixa ii-sensors ze-MEMS zifuna uburhabaxa bomphezulu obungaphantsi kwe-5 nm ngokusebenzisa i-CMP polishing.

• Impembelelo yoShishino: Ngokuvumela ii-wafers ezincinci nezisebenza kakuhle, obu buchwephesha buqhuba uphuhliso kwiitships ze-AI, iimodyuli ze-5G mmWave, kunye nee-elektroniki eziguquguqukayo, kunye nokunyamezelana kwe-TTV <0.1 μm kwizibonisi ezisongekayo kunye <0.5 μm kwizinzwa ze-LiDAR zeemoto.

Iinkonzo ze-XKH

1. Izisombululo ezenziwe ngokwezifiso
Uqwalaselo Olunokukhuliswa: Uyilo lwegumbi oluyi-intshi ezi-4–12 olunokulayisha/ukukhulula izinto ngokuzenzekelayo.
Inkxaso yokusetyenziswa kwe-Doping: Iiresiphi ezenziwe ngokwezifiso zeekristale ezifakwe i-Er/Yb kunye nee-wafers ze-InP/GaAs.

2. Inkxaso yokuphela
Uphuhliso lweNkqubo: Uvavanyo lwasimahla luqhutywa ngokwenziwa ngcono.
Uqeqesho lweHlabathi: Iiworkshop zobugcisa minyaka le malunga nokugcinwa kunye nokusombulula iingxaki.

3. Ukucubungula Izinto Ezininzi
I-SiC: Ukuncitshiswa kwe-wafer ukuya kwi-100 μm nge-Ra <0.1 nm.
I-Sapphire: Ubukhulu obuyi-50μm kwiifestile ze-UV laser (ukudluliselwa kwe-transmittance >92%@200 nm).

4. Iinkonzo ezongeziweyo
Izinto ezisetyenziswayo: Amavili edayimani (ii-wafers ezingaphezu kwama-2000/ubomi) kunye ne-CMP slurries.

Isiphelo

Esi sixhobo sokunciphisa i-wafer sinika ukuchaneka okuphambili kushishino, ukuguquguquka kwezinto ezininzi, kunye nokuzisebenzela ngobuchule, okwenza kube yinto ebalulekileyo ekudityanisweni kwe-3D kunye ne-electronics yamandla. Iinkonzo ezipheleleyo ze-XKH—ukusuka ekwenzeni ngokwezifiso ukuya ekucwangcisweni emva—ziqinisekisa ukuba abathengi bafumana ukusebenza kakuhle kweendleko kunye nokusebenza kakuhle kwimveliso ye-semiconductor.