I-Silicon Carbide Ceramic Chuck ye-SiC, iSapphire Si GAAs Wafer

I-Silicon Carbide Ceramic Chuck ye-SiC swarp Si GAAs Wafer Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-Silicon Carbide Ceramic Chuck yiplatfomu esebenza kakhulu eyenzelwe ukuhlolwa kwe-semiconductor, ukwenziwa kwe-wafer, kunye nokusetyenziswa kwe-bonding. Yakhiwe ngezixhobo ze-ceramic eziphambili—kuquka i-sintered SiC (SSiC), i-reaction-bonded SiC (RSiC), i-silicon nitride, kunye ne-aluminium nitride—inika ukuqina okuphezulu, ukwanda okuphantsi kobushushu, ukumelana nokuguguleka okugqwesileyo, kunye nobomi benkonzo ende.

Thumela i-imeyile kuthi

Iimbonakalo

Umzobo oneenkcukacha

Isishwankathelo seSilicon Carbide (SiC) Ceramic Chuck

II-Silicon Carbide Ceramic Chuckliqonga elisebenza kakuhle kakhulu elenzelwe ukuhlolwa kwe-semiconductor, ukwenziwa kwe-wafer, kunye nokusetyenziswa kwe-bonding. Lakhiwe ngezixhobo ze-ceramic eziphambili—kuqukai-SiC e-sintered (SSiC), i-SiC ebophelelwe yi-reaction (RSiC), i-silicon nitridekunyei-aluminium nitride—iyabonelelaukuqina okuphezulu, ukwanda okuphantsi kobushushu, ukumelana nokuguguleka okugqwesileyo, kunye nobomi benkonzo ende.

Ngobunjineli obuchanekileyo kunye nokupholisha okusemgangathweni ophezulu, i-chuck inikaukuthamba kwe-sub-micron, imiphezulu yomgangatho wesipili, kunye nokuzinza kwexesha elide, nto leyo eyenza ukuba ibe sisisombululo esifanelekileyo kwiinkqubo ezibalulekileyo ze-semiconductor.

Iingenelo eziphambili

Ubuchule obuphezulu
Ukutyibilika kulawulwa ngaphakathi0.3–0.5 μm, ukuqinisekisa uzinzo lwe-wafer kunye nokuchaneka kwenkqubo rhoqo.
Ukupolisha izipili
ImpumeleloI-Ra 0.02 μmuburhabaxa bomphezulu, kunciphisa imikrwelo ye-wafer kunye nongcoliseko—ifanelekile kwiindawo ezicocekileyo kakhulu.
Ilula kakhulu
Iqinile kodwa ilula kune-quartz okanye i-metal substrates, iphucula ulawulo lwentshukumo, ukusabela, kunye nokuchaneka kokubeka indawo.
Ukuqina Okuphezulu
Imodulus kaYoung engaqhelekanga iqinisekisa uzinzo olulinganayo phantsi kwemithwalo enzima kunye nokusebenza ngesantya esiphezulu.
Ukwanda Okuphantsi Kobushushu
I-CTE ihambelana ngokusondeleyo nee-wafers ze-silicon, inciphisa uxinzelelo lobushushu kwaye iphucula ukuthembeka kwenkqubo.
Ukumelana nokuNxiba okuBalaseleyo
Ukuqina kakhulu kugcina ukuthamba kunye nokuchaneka nokuba kusetyenziswa ixesha elide, rhoqo.

Inkqubo yoMveliso

Ukulungiswa kwezinto eziluhlaza
Iipowder zeSiC ezicocekileyo kakhulu ezinobukhulu beesuntswana ezilawulwayo kunye nokungcola okuphantsi kakhulu.
Ukwakha kunye nokuSinta
Iindlela ezifanaukucofa ngaphandle koxinzelelo (SSiC) or ukubopha kwempendulo (RSiC)velisa izinto ezixineneyo nezifanayo zeseramikhi.
Umatshini Wokuchwetheza ngokuchanekileyo
Ukusila nge-CNC, ukucheba nge-laser, kunye nomatshini wokuchwetheza ngokuchanekileyo kakhulu kufikelela kunyamezelo lwe-±0.01 mm kunye nokulingana kwe-≤3 μm.
Unyango Lomphezulu
Ukugaya nokupolisha okunemigangatho emininzi ukuya kwi-Ra 0.02 μm; iingubo ezikhethiweyo ziyafumaneka ukuze zikwazi ukumelana nokugqwala okanye iipropati zokungqubana ezenziwe ngokwezifiso.
Uhlolo kunye noLawulo loMgangatho
Ii-Interferometers kunye nabavavanyi boburhabaxa baqinisekisa ukuthotyelwa kweenkcukacha ze-semiconductor-grade.

Iinkcukacha zobugcisa

Ipharamitha	Ixabiso	Iyunithi
Ukuthe tyaba	≤0.5	μm
Ubungakanani bewafer	6'', 8'', 12'' (iyafumaneka ngokwezifiso)	—
Uhlobo lomphezulu	Uhlobo lwephini / Uhlobo lweringi	—
Ukuphakama kwephini	0.05–0.2	mm
Ububanzi obuncinci bepini	ϕ0.2	mm
Isithuba esincinci sephini	3	mm
Ububanzi obuncinci bendandatho yesitywino	0.7	mm
Uburhabaxa bomphezulu	I-Ra 0.02	μm
Ukunyamezelana kobukhulu	±0.01	mm
Ukunyamezelana kobubanzi	±0.01	mm
Ukunyamezelana kokufana	≤3	μm

Izicelo eziphambili

Izixhobo zokuhlola i-wafer ye-semiconductor
Iinkqubo zokwenza iiwafer kunye nokudlulisa
Izixhobo zokubopha kunye nokupakisha i-wafer
Ukuveliswa kwezixhobo ze-optoelectronic eziphucukileyo
Izixhobo ezichanekileyo ezifuna iindawo ezithe tyaba kakhulu nezicocekileyo kakhulu

Imibuzo neempendulo – I-Silicon Carbide Ceramic Chuck

Q1: Ii-SiC ceramic chucks zithelekiswa njani nee-quartz okanye ii-metal chucks?
A1: Ii-SiC chucks zikhaphukhaphu, ziqinile, kwaye zine-CTE esondele kwii-silicon wafers, nto leyo enciphisa ukuguquguquka kobushushu. Zikwabonelela ngokumelana nokuguguleka okuphezulu kunye nobomi obude.

Umbuzo 2: Kukuphi ukuthamba okunokufikelelwa?
A2: Ilawulwa ngaphakathi0.3–0.5 μm, ukuhlangabezana neemfuno ezingqongqo zemveliso ye-semiconductor.

Umbuzo 3: Ngaba umphezulu uza kukrwela ii-wafers?
A3: Hayi—ipeyintwe ngesipili ukuzeI-Ra 0.02 μm, ukuqinisekisa ukuphathwa okungenamikrwelo kunye nokuveliswa kwamasuntswana okuncitshisiweyo.

Q4: Zeziphi iisayizi ze-wafer ezixhaswayo?
A4: Ubungakanani obuqhelekileyo be6'', 8'', kunye ne-12'', kunye nokwenza ngokwezifiso okufumanekayo.

Umbuzo 5: Injani ukumelana nobushushu?
I-A5: Iiseramikhi zeSiC zibonelela ngokusebenza kakuhle kakhulu kubushushu obuphezulu kunye nokuguquguquka okuncinci phantsi komjikelo wobushushu.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.