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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch

SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch Umfanekiso okhoyo
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch

Inkcazo emfutshane:

Sinikezela ngokukhetha okwahlukeneyo kwee-wafers zeSiC (Silicon Carbide) ezikumgangatho ophezulu, sigxile kakhulu kwii-wafers ze-N-type 4H-N kunye ne-6H-N, ezifanelekileyo kwizicelo kwi-optoelectronics eziphambili, izixhobo zamandla, kunye neendawo ezishushu kakhulu. Ezi wafers ze-N-type zaziwa ngokuqhuba kwazo ubushushu ngendlela egqwesileyo, uzinzo olubalaseleyo lombane, kunye nokuqina okumangalisayo, okwenza zilungele ukusetyenziswa okuphezulu njenge-electronics zamandla, iinkqubo zokuqhuba izithuthi zombane, ii-inverters zamandla avuselelekayo, kunye nezixhobo zamandla zoshishino. Ukongeza kwiminikelo yethu ye-N-type, sikwabonelela ngee-wafers ze-P-type 4H/6H-P kunye ne-3C SiC kwiimfuno ezizodwa, kubandakanya izixhobo ze-high-frequency kunye ne-RF, kunye nezicelo ze-photonic. Ii-wafers zethu ziyafumaneka ngobukhulu obuqala kwi-intshi ezi-2 ukuya kwi-intshi ezi-8, kwaye sinikezela ngezisombululo ezenzelwe wena ukuhlangabezana neemfuno ezithile zamacandelo ahlukeneyo emizi-mveliso. Ngeenkcukacha ezithe vetshe okanye imibuzo, nceda uzive ukhululekile ukuqhagamshelana nathi.


Iimbonakalo

Iipropati

IiWafers zeSiC zohlobo lwe-4H-N kunye ne-6H-N (iiWafers zeSiC zohlobo lwe-N)

Isicelo:Isetyenziswa kakhulu kwizixhobo ze-elektroniki ezinamandla, ii-optoelectronics, kunye nezicelo zobushushu obuphezulu.

Uluhlu lobubanzi:50.8 mm ukuya kuma-200 mm.

Ubukhulu:350 μm ± 25 μm, enobukhulu obunganyanzelekanga obuyi-500 μm ± 25 μm.

Ukuxhathisa:Uhlobo lwe-N 4H/6H-P: ≤ 0.1 Ω·cm (udidi lwe-Z), ≤ 0.3 Ω·cm (udidi lwe-P); Uhlobo lwe-N 3C-N: ≤ 0.8 mΩ·cm (udidi lwe-Z), ≤ 1 mΩ·cm (udidi lwe-P).

Uburhabaxa:I-Ra ≤ 0.2 nm (i-CMP okanye i-MP).

Uxinano lweeMipayipi ezincinci (MPD):< 1 nganye/cm².

I-TTV: ≤ 10 μm kuzo zonke iidayamitha.

I-Warp: ≤ 30 μm (≤ 45 μm kwiiwafers eziyi-8 intshi).

Ukukhutshwa komda:3 mm ukuya kwi-6 mm kuxhomekeke kuhlobo lwe-wafer.

Ukupakisha:Ikhasethi yewafer eninzi okanye isitya sewafer enye.

Ubungakanani obufumanekayo obuyi-3inch 4inch 6inch 8inch

I-HPSI (iiWafers zeSiC eziQinisekisiweyo ngokuPheleleyo)

Isicelo:Isetyenziselwa izixhobo ezifuna ukumelana okuphezulu nokusebenza okuzinzileyo, njengezixhobo zeRF, usetyenziso lwe-photonic, kunye neesensa.

Uluhlu lobubanzi:50.8 mm ukuya kuma-200 mm.

Ubukhulu:Ubukhulu obuqhelekileyo obuyi-350 μm ± 25 μm kunye neendlela ezahlukeneyo zeewafers ezityebileyo ukuya kuthi ga kwi-500 μm.

Uburhabaxa:URa ≤ 0.2 nm.

Uxinano lweeMipayipi ezincinci (MPD): ≤ 1 nganye/cm².

Ukuxhathisa:Ukumelana okuphezulu, okuhlala kusetyenziswa kwizicelo zokuthintela ukufudumeza kancinci.

I-Warp: ≤ 30 μm (kwiisayizi ezincinci), ≤ 45 μm kwizangqa ezinkulu.

I-TTV: ≤ 10 μm.

Ubungakanani obufumanekayo obuyi-3inch 4inch 6inch 8inch

4H-P、6H-P&3C I-SiC wafer(IiWafers zeSiC zohlobo lwe-P)

Isicelo:Ngokuyintloko yezixhobo zamandla kunye nezixhobo ezisebenzisa i-frequency ephezulu.

Uluhlu lobubanzi:50.8 mm ukuya kuma-200 mm.

Ubukhulu:350 μm ± 25 μm okanye ukhetho olulungiselelwe wena.

Ukuxhathisa:Uhlobo lwe-P 4H/6H-P: ≤ 0.1 Ω·cm (udidi lwe-Z), ≤ 0.3 Ω·cm (udidi lwe-P).

Uburhabaxa:I-Ra ≤ 0.2 nm (i-CMP okanye i-MP).

Uxinano lweeMipayipi ezincinci (MPD):< 1 nganye/cm².

I-TTV: ≤ 10 μm.

Ukukhutshwa komda:3 mm ukuya kwi-6 mm.

I-Warp: ≤ 30 μm kwiisayizi ezincinci, ≤ 45 μm kwiisayizi ezinkulu.

Ubungakanani obufumanekayo obuyi-3inch 4inch 6inch5×5 10×10

Itheyibhile yeeParamitha zeDatha ezingaphelelanga

Ipropati

2 intshi

3intshi

4intshi

6intshi

8intshi

Uhlobo

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

I-4H-N/HPSI/4H-SEMI

Ububanzi

50.8 ± 0.3 mm

76.2±0.3mm

100±0.3mm

150±0.3mm

200 ± 0.3 mm

Ubukhulu

330 ± 25 um

350 ±25 um

350 ±25 um

350 ±25 um

350 ±25 um

350±25um；

500±25um

500±25um

500±25um

500±25um

okanye eyenziwe ngokwezifiso

okanye eyenziwe ngokwezifiso

okanye eyenziwe ngokwezifiso

okanye eyenziwe ngokwezifiso

okanye eyenziwe ngokwezifiso

Uburhabaxa

URa ≤ 0.2nm

URa ≤ 0.2nm

URa ≤ 0.2nm

URa ≤ 0.2nm

URa ≤ 0.2nm

I-Warp

≤ 30um

≤ 30um

≤ 30um

≤ 30um

≤45um

I-TTV

≤ 10um

≤ 10um

≤ 10um

≤ 10um

≤ 10um

Krwela/Grumba

I-CMP/MP

I-MPD

<1e/cm-2

<1e/cm-2

<1e/cm-2

<1e/cm-2

<1e/cm-2

Imilo

Ingqukuva, Ithe tyaba yi-16mm; Ubude yi-22mm; Ubude yi-30/32.5mm; Ubude yi-47.5mm; I-NOTCH; I-NOTCH;

I-Bevel

45°, I-SEMI Spec; Imilo ye-C

 Ibanga

Ibanga lemveliso yeMOS neSBD; Ibanga lophando; Ibanga elingaqhelekanga, Ibanga le-wafer yembewu

Amagqabaza

Ububanzi, Ubukhulu, Ukuqonda, iinkcukacha ezingentla zingenziwa ngokwezifiso ngokwesicelo sakho

 

Izicelo

·Amandla e-Elektroniki

Ii-wafer ze-SiC zohlobo lwe-N zibaluleke kakhulu kwizixhobo ze-elektroniki ezisebenza ngamandla ngenxa yokukwazi kwazo ukuphatha i-voltage ephezulu kunye ne-current ephezulu. Zisetyenziswa kakhulu kwii-power converters, ii-inverters, kunye nee-motor drives kumashishini afana namandla avuselelekayo, izithuthi zombane, kunye ne-industrial automation.

· I-Optoelectronics
Izixhobo zeSiC zohlobo lwe-N, ngakumbi kwizicelo ze-optoelectronic, zisetyenziswa kwizixhobo ezifana nee-diode ezikhupha ukukhanya (ii-LED) kunye nee-laser diodes. Ukuqhuba kwazo ubushushu obuphezulu kunye ne-wide bandgap kuzenza zilungele izixhobo ze-optoelectronic ezisebenza kakuhle.

·Izicelo zoBushushu obuPhezulu
Ii-wafer ze-SiC ze-4H-N 6H-N zilungele kakuhle iindawo ezinobushushu obuphezulu, njengakwizixhobo zombane kunye nezixhobo ezisetyenziswa kwi-aerospace, kwiimoto, nakwiindawo zoshishino apho ukuchithwa kobushushu kunye nokuzinza kumaqondo obushushu aphezulu kubaluleke kakhulu.

·Izixhobo zeRF
Ii-wafer ze-SiC ze-4H-N 6H-N zisetyenziswa kwizixhobo zerediyo (RF) ezisebenza kwiindawo ezinamaza aphezulu. Zisetyenziswa kwiinkqubo zonxibelelwano, iteknoloji yeradar, kunye nonxibelelwano lwesathelayithi, apho kufuneka khona ukusebenza kakuhle kwamandla kunye nokusebenza kakuhle.

·Usetyenziso lweFotoniki
Kwi-photonics, ii-SiC wafers zisetyenziselwa izixhobo ezifana nee-photodetectors kunye nee-modulators. Iimpawu ezikhethekileyo zesixhobo zivumela ukuba sisebenze ekuveliseni ukukhanya, ukuguqulwa, kunye nokuchongwa kwiinkqubo zonxibelelwano lwe-optical kunye nezixhobo zomfanekiso.

·Izinzwa
Ii-wafer ze-SiC zisetyenziswa kwiindlela ezahlukeneyo zokusebenzisa ii-sensor, ingakumbi kwiindawo ezinzima apho ezinye izinto zinokungasebenzi kakuhle. Ezi ziquka ubushushu, uxinzelelo, kunye nee-sensor zeekhemikhali, ezibalulekileyo kwiinkalo ezifana neemoto, ioyile negesi, kunye nokubeka esweni okusingqongileyo.

·Iinkqubo zokuQhuba iiMoto zoMbane
Itekhnoloji yeSiC idlala indima ebalulekileyo kwizithuthi zombane ngokuphucula ukusebenza kakuhle kunye nokusebenza kweenkqubo zokuqhuba. Ngee-semiconductors zamandla eSiC, izithuthi zombane zinokufikelela kubomi bebhetri obungcono, amaxesha okutshaja ngokukhawuleza, kunye nokusebenza kakuhle kwamandla.

·IiSensors eziPhambili kunye neeFotonic Converters
Kwiiteknoloji ze-sensor eziphucukileyo, ii-SiC wafers zisetyenziselwa ukwenza ii-sensors ezichanekileyo kakhulu kwizicelo ze-robotics, izixhobo zonyango, kunye nokubeka esweni okusingqongileyo. Kwii-photonic converters, iipropati ze-SiC zisetyenziswa ukuze kube lula ukuguqulwa kwamandla ombane abe ziisignali ezibonakalayo, nto leyo ebalulekileyo kunxibelelwano lwefowuni kunye neziseko ze-intanethi ezikhawulezayo.

Imibuzo neempendulo

Q：Yintoni i-4H kwi-4H SiC?
A："4H" kwi-4H I-SiC ibhekisa kwisakhiwo sekristale se-silicon carbide, ngakumbi imo ye-hexagonal eneeleya ezine (H). I-"H" ibonisa uhlobo lwe-hexagonal polytype, eyahlula kwezinye ii-SiC polytypes ezifana ne-6H okanye i-3C.

Q：Iyintoni i-thermal conductivity ye-4H-SiC?
A:Ulawulo lobushushu lwe-4H-SiC (iSilicon Carbide) lumalunga ne-490-500 W/m·K kubushushu begumbi. Olu lawulo lobushushu oluphezulu lwenza ukuba lulungele ukusetyenziswa kwii-elektroniki zamandla nakwiindawo ezinobushushu obuphezulu, apho ukuchithwa kobushushu okusebenzayo kubalulekile.

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