Uhlobo lweSiC Ingot 4H-N Dummy grade 2inch 3inch 4inch 6inch ubukhulu: >10mm

Inkcazo emfutshane:

I-4H-N Type SiC Ingot (Dummy Grade) sisixhobo esikumgangatho ophezulu esisetyenziswa kuphuhliso novavanyo lwezixhobo ze-semiconductor eziphambili. Ngenxa yeempawu zayo zombane, ubushushu, kunye noomatshini ezomeleleyo, ifanelekile kwizicelo zamandla aphezulu kunye nobushushu obuphezulu. Esi sixhobo sifanelekile kakhulu kuphando nophuhliso kwizixhobo ze-elektroniki zamandla, iinkqubo zeemoto, kunye nezixhobo zoshishino. Ifumaneka ngobukhulu obahlukeneyo, kubandakanya ububanzi obuyi-2 intshi, 3 intshi, 4 intshi, kunye ne-6 intshi, esi sisixhobo senzelwe ukuhlangabezana neemfuno ezingqongqo zoshishino lwe-semiconductor ngelixa sinikezela ngokusebenza okugqwesileyo kunye nokuthembeka.


Iimbonakalo

Isicelo

Izixhobo zombane:Isetyenziswa ekuveliseni ii-transistors zamandla ezisebenzayo kakhulu, ii-diode, kunye nezilungisi ze-rectifiers kwizicelo zoshishino nezeemoto.

Iimoto zombane (ii-EV):Isetyenziswa ekuveliseni iimodyuli zamandla kwiinkqubo zokuqhuba ngombane, ii-inverters, kunye neetshaja.

Iinkqubo zamandla ahlaziyekayo:Kubalulekile ekuphuhlisweni kwezixhobo zokuguqula umbane ezisebenzayo kwiinkqubo zokugcina amandla elanga, umoya kunye namandla.

Inqwelo-moya kunye noKhuselo:Isetyenziswa kwiindawo ezisebenzisa amaza aphezulu kunye namandla aphezulu, kuquka iinkqubo zeradar kunye nonxibelelwano lwesathelayithi.

Iinkqubo zoLawulo lweMizi-mveliso:Ixhasa izixhobo zokulawula eziphambili kunye nezixhobo zokulawula kwiindawo ezifuna kakhulu.

Iipropati

ukuhanjiswa kombane.
Iinketho zobubanzi: 2-intshi, 3-intshi, 4-intshi, kunye ne-6-intshi.
Ubukhulu: >10mm, ukuqinisekisa ukuba kukho izinto ezininzi zokusika nokucubungula iiwafer.
Uhlobo: Udidi oluyiDummy, olusetyenziswa kakhulu kuvavanyo nophuhliso olungelulo olwezixhobo.
Uhlobo lwenkampani: Uhlobo lwe-N, olulungiselela izixhobo zamandla ezisebenza kakuhle.
Ukuqhuba Ubushushu: Kuhle kakhulu, kulungele ukuchithwa kobushushu ngokufanelekileyo kwizixhobo ze-elektroniki.
Ukuxhathisa: Ukuxhathisa okuphantsi, okuphucula ukuhanjiswa kwamandla kunye nokusebenza kakuhle kwezixhobo.
Amandla Oomatshini: Phezulu, okuqinisekisa ukuqina nozinzo phantsi koxinzelelo kunye nobushushu obuphezulu.
Iimpawu Zokukhanya: Zibonakala ngokucacileyo kuluhlu olubonakalayo lwe-UV, nto leyo eyenza ukuba zilungele ukusetyenziswa kwezixhobo ze-optical sensor.
Uxinano olupheleleyo lweziphene: Luphantsi, nto leyo enegalelo kumgangatho ophezulu wezixhobo ezenziweyo.
Iinkcukacha ze-SiC ingot
Udidi: Imveliso;
Ubungakanani: 6intshi;
Ububanzi: 150.25mm +0.25:
Ubukhulu: >10mm;
Ukujongwa komphezulu:4°ukuya<11-20>+0.2°:
Ukujongwa kwesiseko esithe tyaba: <1-100>+5°:
Ubude obuphambili obuthe tyaba: 47.5mm+1.5 ;
Ukuxhathisa: 0.015-0.02852:
I-Micropipe: <0.5;
I-BPD: <2000;
I-TSD: <500;
Iindawo zePolytype: Akukho;
Ii-Fdge indents :<3,:lmm ububanzi kunye nobunzulu;
IiQracks zoMda: 3,
Ukupakisha: Ibhokisi ye-wafer;
Kwiiodolo ezininzi okanye ngokwezifiso ezithile, amaxabiso anokwahluka. Nceda uqhagamshelane nesebe lethu lokuthengisa ukuze ufumane ikowuteshini eyenzelwe wena ngokusekelwe kwiimfuno zakho kunye nobungakanani.

Umzobo oneenkcukacha

I-SiC Ingot11
I-SiC Ingot14
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I-SiC Ingot15

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