I-SiC Ceramic Tray ye-Wafer Carrier enokumelana nobushushu obuphezulu
Itreyi yeCeramic yeSilicon Carbide (iTrayi yeSiC)
Inxalenye yeseramikhi esebenza kakhulu esekwe kwizinto zesilicon carbide (SiC), eyenzelwe ukusetyenziswa kwemizi-mveliso ephambili efana nokuveliswa kwee-semiconductor kunye nemveliso ye-LED. Imisebenzi yayo ephambili ibandakanya ukusebenza njengomthwali we-wafer, iqonga lenkqubo yokugrumba, okanye inkxaso yenkqubo yobushushu obuphezulu, ukusebenzisa ukuhanjiswa kobushushu okugqwesileyo, ukumelana nobushushu obuphezulu, kunye nokuzinza kweekhemikhali ukuqinisekisa ukufana kwenkqubo kunye nemveliso yemveliso.
Iimpawu eziphambili
1. Ukusebenza kobushushu
- Ukuqhuba Ubushushu Okuphezulu: 140–300 W/m·K, idlula kakhulu igrafiti yendabuko (85 W/m·K), nto leyo evumela ukutshatyalaliswa kobushushu ngokukhawuleza kwaye inciphise uxinzelelo lobushushu.
- I-Coefficient yokwandisa ubushushu obuphantsi: 4.0×10⁻⁶/℃ (25–1000℃), i-silicon ehambelana ngokusondeleyo (2.6×10⁻⁶/℃), inciphisa iingozi zokuguquguquka kobushushu.
2. Iipropati zoomatshini
- Amandla Aphezulu: Amandla okugoba ≥320 MPa (20℃), ayamelana nokucinezelwa kunye nokuchatshazelwa.
- Ubunzima obuphezulu: Ubunzima beMohs yi-9.5, bulandela idayimani kuphela, bunika ukumelana nokuguguleka okuphezulu.
3. Uzinzo lweeKhemikhali
- Ukumelana Nokugqwala: Iyamelana nee-asidi ezinamandla (umz., HF, H₂SO₄), ifanelekile kwiindawo zenkqubo yokugqwala.
- I-Non-Magnetic: I-Intrinsic magnetic susceptibility <1×10⁻⁶ emu/g, ithintela ukuphazamiseka kwezixhobo ezichanekileyo.
4. Ukunyamezelana Okugqithisileyo Kwendalo
- Ukuqina kobushushu obuphezulu: Ubushushu bokusebenza bexesha elide ukuya kuthi ga kwi-1600–1900℃; ukumelana kwexesha elifutshane ukuya kuthi ga kwi-2200℃ (indawo engenaoksijini).
- Ukumelana Nokutshatyalaliswa Kobushushu: Iyamelana notshintsho olukhawulezileyo lobushushu (ΔT >1000℃) ngaphandle kokuqhekeka.
Izicelo
| Intsimi yesicelo | Imeko ezithile | Ixabiso lobuchwephesha |
| Ukwenziwa kweeSemiconductors | Ukugrumba kweWafer (ICP), ukugalelwa kwefilimu encinci (MOCVD), ukupolishwa kweCMP | Ukuqhuba okuphezulu kobushushu kuqinisekisa amasimi obushushu afanayo; ukwandiswa kobushushu obuphantsi kunciphisa i-wafer warpage. |
| Imveliso ye-LED | Ukukhula kwe-Epitaxial (umz., i-GaN), ukugawulwa kwe-wafer, ukupakishwa | Ithintela iziphene zeentlobo ezininzi, iphucula ukusebenza kakuhle kokukhanya kwe-LED kunye nobomi bayo bonke. |
| Ishishini le-Photovoltaic | Izitofu zokusila ze-silicon wafer, izixhobo ze-PECVD ezixhasayo | Ukumelana noxinzelelo lobushushu obuphezulu kunye nobushushu kwandisa ubomi bezixhobo. |
| I-Laser kunye ne-Optics | Ii-substrates zokupholisa ze-laser ezinamandla aphezulu, inkxaso yenkqubo ye-optical | Ukuqhuba okuphezulu kobushushu kwenza ukuba ubushushu buphele ngokukhawuleza, kuzinziswe izinto ezibonakalayo. |
| Izixhobo Zohlalutyo | Ababambi beesampulu ze-TGA/DSC | Umthamo wobushushu ophantsi kunye nokuphendula ngokukhawuleza kobushushu kuphucula ukuchaneka kokulinganisa. |
Iingenelo zeMveliso
- Ukusebenza Okupheleleyo: Ukuqhuba kobushushu, amandla, kunye nokumelana nokugqwala kudlula kakhulu i-alumina kunye ne-silicon nitride ceramics, nto leyo ehlangabezana neemfuno ezigqithisileyo zokusebenza.
- Uyilo oluKhawulezayo: Ubuninzi be-3.1–3.2 g/cm³ (40% yentsimbi), kunciphisa umthwalo we-inertial kunye nokuphucula ukuchaneka kwentshukumo.
- Ixesha Elide Nokuthembeka: Ubomi benkonzo budlula iminyaka emi-5 kwi-1600℃, kunciphisa ixesha lokungasebenzi kwaye kunciphisa iindleko zokusebenza nge-30%.
- Ukwenziwa ngokwezifiso: Ixhasa iijometri ezintsonkothileyo (umz., iikomityi zokufunxa ezinemingxuma, iitreyi ezineeleya ezininzi) kunye nempazamo yokuba tyaba <15 μm kwizicelo ezichanekileyo.
Iinkcukacha zobugcisa
| Udidi lweParamitha | Isalathisi |
| Iimpawu Zomzimba | |
| Uxinano | ≥3.10 g/cm³ |
| Amandla okuZivumelanisa nezimo (20℃) | 320–410 MPa |
| Ukuqhuba kwe-Thermal (20℃) | 140–300 W/(m·K) |
| I-Coefficient yoKwandiswa koBushushu (25–1000℃) | 4.0×10⁻⁶/℃ |
| Iipropati zeKhemikhali | |
| Ukumelana ne-asidi (HF/H₂SO₄) | Akukho monakalo emva kokuntywiliselwa iiyure ezingama-24 |
| Ukuchaneka koMatshini | |
| Ukuthe tyaba | ≤15 μm (300×300 mm) |
| Uburhabaxa bomphezulu (Ra) | ≤0.4 μm |
Iinkonzo ze-XKH
I-XKH ibonelela ngezisombululo ezipheleleyo zoshishino eziquka uphuhliso oluqhelekileyo, umatshini wokulungisa ngokuchanekileyo, kunye nolawulo lomgangatho oluqinileyo. Kuphuhliso oluqhelekileyo, ibonelela ngezisombululo zezinto ezicocekileyo kakhulu (>99.999%) kunye nezimbobo (30–50%), ezidityaniswe nemodeli ye-3D kunye nokulinganisa ukwenza ngcono iijometri ezintsonkothileyo kwizicelo ezifana nee-semiconductors kunye ne-aerospace. Umatshini wokulungisa ngokuchanekileyo ulandela inkqubo ecwangcisiweyo: ukucubungula ipowder → ukucinezela okucacileyo/okomileyo → ukucocwa kwe-2200°C → ukugaywa kwe-CNC/idayimani → ukuhlolwa, ukuqinisekisa ukupholishwa kwinqanaba le-nanometer kunye nokunyamezelana kobukhulu be-±0.01 mm. Ulawulo lomgangatho lubandakanya uvavanyo lwenkqubo epheleleyo (ukwakheka kwe-XRD, isakhiwo se-SEM, ukugoba kwamanqaku ama-3) kunye nenkxaso yobugcisa (ukwenziwa ngcono kwenkqubo, ukubonisana iiyure ezingama-24/7, ukuhanjiswa kwesampuli iiyure ezingama-48), ukubonelela ngezinto ezinokuthenjwa nezisebenza kakuhle kwiimfuno zoshishino eziphambili.
Imibuzo Ebuzwa Rhoqo (Imibuzo Ebuzwa Rhoqo)
1. Q: Ngawaphi amashishini asebenzisa iitreyi ze-silicon carbide ceramic?
A: Isetyenziswa kakhulu ekwenzeni i-semiconductor (ukuphathwa kwe-wafer), amandla elanga (iinkqubo ze-PECVD), izixhobo zonyango (izinto ze-MRI), kunye ne-aerospace (iindawo ezinobushushu obuphezulu) ngenxa yokumelana kwazo nobushushu obugqithisileyo kunye nozinzo lweekhemikhali.
2. Q: I-silicon carbide isebenza ngcono kuneetreyi ze-quartz/zeglasi?
A: Ukumelana okuphezulu kobushushu (ukuya kuthi ga kwi-1800°C xa kuthelekiswa ne-1100°C ye-quartz), ukuphazamiseka kwemagnethi okungekhoyo, kunye nexesha elide (iminyaka emi-5+ xa kuthelekiswa neenyanga ezi-6-12 ze-quartz).
3. Q: Ngaba iitreyi ze-silicon carbide zingakwazi ukumelana neendawo ezine-asidi?
A: Ewe. Ayimelani ne-HF, i-H2SO4, kunye ne-NaOH ene-<0.01mm corrosion/ngonyaka, nto leyo eyenza ukuba ilungele ukugrunjwa ngeekhemikhali kunye nokucoca ii-wafer.
4. Q: Ngaba iitreyi ze-silicon carbide ziyahambelana ne-automation?
A: Ewe. Yenzelwe ukuthuthwa nge-vacuum kunye nokuphathwa kwerobhothi, kunye nomgangatho othe tyaba <0.01mm ukuthintela ungcoliseko lwamasuntswana kwi-fabs ezizenzekelayo.
5. Q: Ingakanani intelekelelo yeendleko xa ithelekiswa nezixhobo zemveli?
A: Ixabiso eliphezulu kwangaphambili (i-quartz eziphindwe kathathu ukuya kwezihlanu) kodwa i-TCO iphantsi ngama-30-50% ngenxa yobomi obude, ixesha lokungasebenzi elinciphileyo, kunye nokonga amandla ngenxa yokuqhuba kakuhle kobushushu.
