Ipleyiti/itreyi ye-ceramic ye-SiC ye-4 intshi ye-6 intshi ye-wafer holder ye-ICP

Ipleyiti/itreyi ye-ceramic ye-SiC ye-4 intshi ye-6 intshi ye-wafer ye-ICP Umfanekiso oPhambili

Inkcazo emfutshane:

Ipleyiti yeseramikhi yeSiC yinxalenye esebenza kakhulu eyenziwe ngeSilicon Carbide ecocekileyo kakhulu, eyenzelwe ukusetyenziswa kwiindawo ezishushu kakhulu, iikhemikhali, kunye nezoomatshini. Idume ngokuqina kwayo okungaqhelekanga, ukuqhuba kobushushu, kunye nokumelana nokugqwala, ipleyiti yeSiC isetyenziswa kakhulu njengesithwali se-wafer, i-susceptor, okanye icandelo lesakhiwo kwimizi-mveliso ye-semiconductor, i-LED, i-photovoltaic, kunye ne-aerospace.

Thumela i-imeyile kuthi

Iimbonakalo

Ipleyiti yeseramikhi yeSiC Isishwankathelo

Ngozinzo olubalaseleyo lobushushu olufikelela kwi-1600°C kunye nokumelana okuhle kakhulu neegesi ezisabelayo kunye neendawo zeplasma, ipleyiti yeSiC iqinisekisa ukusebenza rhoqo ngexesha leenkqubo zokugrumba, zokubeka, kunye nokusasazwa kobushushu obuphezulu. Ulwakhiwo lwayo oluxineneyo, olungenamibhobho lunciphisa ukuveliswa kwamasuntswana, okwenza ukuba ilungele ukusetyenziswa okucocekileyo kakhulu kwiindawo zokucoca okanye kwiindawo zokucoca.

Isicelo sepleyiti ye-ceramic ye-SiC

1. Ukuveliswa kweeSemiconductor

Iipleyiti ze-ceramic ze-SiC zihlala zisetyenziswa njengee-wafer carriers, ii-susceptors, kunye nee-pedestal plates kwizixhobo zokwenza i-semiconductor ezifana ne-CVD (Chemical Vapor Deposition), i-PVD (Physical Vapor Deposition), kunye neenkqubo zokugrumba. Ukuqhuba kwazo ubushushu okugqwesileyo kunye nokwandiswa kobushushu obuphantsi kuvumela ukuba zigcine usasazo lobushushu olufanayo, nto leyo ebalulekileyo ekucutshungulweni kwe-wafer ngokuchanekileyo. Ukumelana kwe-SiC kwiigesi ezirhabaxa kunye neeplasma kuqinisekisa ukuqina kwiindawo ezinzima, kunceda ekunciphiseni ungcoliseko lwamasuntswana kunye nokugcinwa kwezixhobo.

2. Ushishino lwe-LED – Ukukrola i-ICP

Kwicandelo lokuvelisa i-LED, iipleyiti zeSiC zizinto ezibalulekileyo kwiinkqubo zokugrumba ze-ICP (Inductively Coupled Plasma). Zisebenza njengezibambi ze-wafer, zibonelela ngeqonga elizinzileyo neliqinileyo lokuxhasa ii-wafer ze-sapphire okanye ze-GaN ngexesha lokucubungula i-plasma. Ukumelana kwazo okuhle kakhulu kwe-plasma, ukuthamba komphezulu, kunye nozinzo olunemilinganiselo kunceda ukuqinisekisa ukuchaneka okuphezulu kokugrumba kunye nokufana, okukhokelela ekukhuleni kwemveliso kunye nokusebenza kwesixhobo kwiitships ze-LED.

3. I-Photovoltaics (PV) kunye ne-Solar Energy

Iipleyiti ze-ceramic ze-SiC zikwasetyenziswa ekuveliseni iiseli zelanga, ingakumbi ngexesha lokutshisa nokunyusa ubushushu obuphezulu. Ukungangeni kwazo kumaqondo obushushu aphezulu kunye nokukwazi ukumelana nokugoba kuqinisekisa ukucutshungulwa rhoqo kwee-wafer ze-silicon. Ukongeza, umngcipheko wazo omncinci wongcoliseko ubalulekile ekugcineni ukusebenza kakuhle kweeseli ze-photovoltaic.

Iipropati zepleyiti yeseramikhi yeSiC

1. Amandla kunye noBulukhuni boMatshini obungaqhelekanga

Iipleyiti zeseramikhi zeSiC zinamandla aphezulu kakhulu oomatshini, kwaye amandla aqhelekileyo okugoba adlula i-400 MPa kwaye ubunzima beVickers bufikelela kwi->2000 HV. Oku kuzenza zikwazi ukumelana nokuguguleka koomatshini, ukukrala, kunye nokuguquka, okuqinisekisa ubomi obude benkonzo nokuba phantsi komthwalo omkhulu okanye ukujikeleza kobushushu okuphindaphindiweyo.

2. Ukuqhuba okuphezulu kobushushu

I-SiC inomoya ohamba kakuhle kakhulu wobushushu (ngesiqhelo i-120–200 W/m·K), nto leyo eyivumela ukuba isasaze ubushushu ngokulinganayo kumphezulu wayo. Le mpawu ibalulekile kwiinkqubo ezifana nokugrumba kwe-wafer, ukubekwa, okanye ukuthungwa, apho ukufana kobushushu kuchaphazela ngokuthe ngqo isivuno kunye nomgangatho wemveliso.

3. Uzinzo oluPhezulu lobushushu

Ngeqondo lokunyibilika eliphezulu (2700°C) kunye ne-coefficient ephantsi yokwandiswa kobushushu (4.0 × 10⁻⁶/K), iipleyiti zeseramikhi zeSiC zigcina ukuchaneka kobukhulu kunye nokuqina kwesakhiwo phantsi kwemijikelo yokufudumeza nokupholisa ngokukhawuleza. Oku kuzenza zilungele ukusetyenziswa kwii-oven ezishushu kakhulu, amagumbi okufunxa, nakwiindawo zeplasma.

Iipropati zobugcisa
Isalathiso	Iyunithi	Ixabiso
Igama lezinto		I-Reaction Sintered Silicon Carbide	I-Silicon Carbide engenaxinzelelo	I-Silicon Carbide ephinde yasetyenziswa
Ukwakhiwa		I-RBSiC	I-SSiC	R-SiC
Unizi lolwapho kuyiwa khona	g/cm3	3	3.15 ± 0.03	2.60-2.70
Amandla okuGuquka	I-MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100 (1400°C)
Amandla oxinzelelo	I-MPa (kpsi)	1120(158)	3970(560)	> 600
Ukuqina	I-Knoop	2700	2800	/
Ukuphelisa Ukuqina	I-MPa m1/2	4.5	4	/
Ukuqhuba kweThermal	W/mk	95	120	23
Ukwanda kwe-Thermal Coefficient	10^-6.1/°C	5	4	4.7
Ubushushu obuthile	IJoule/g 0k	0.8	0.67	/
Ubushushu obuphezulu emoyeni	℃	1200	1500	1600
Imodulus ye-Elastic	I-Gpa	360	410	240

Imibuzo neempendulo ngepleyiti ye-ceramic ye-SiC

Q: Zithini iimpawu zeplate ye-silicon carbide?

A: Iipleyiti zeSilicon carbide (SiC) zaziwa ngamandla azo aphezulu, ubulukhuni, kunye nokuzinza kobushushu. Zibonelela ngokuqhuba kakuhle kobushushu kunye nokwanda okuphantsi kobushushu, ziqinisekisa ukusebenza okuthembekileyo phantsi kobushushu obugqithisileyo. I-SiC ikwangasebenzi kakuhle ngokweekhemikhali, imelana nee-asidi, ii-alkali, kunye neendawo zeplasma, okwenza ukuba ilungele ukucutshungulwa kwe-semiconductor kunye ne-LED. Umphezulu wayo oxineneyo, ogudileyo unciphisa ukuveliswa kwamasuntswana, ukugcina ukuhambelana kwegumbi lokucoca. Iipleyiti zeSiC zisetyenziswa kakhulu njengee-wafer carriers, susceptors, kunye neenxalenye zenkxaso kwiindawo ezinobushushu obuphezulu kunye ne-corrosive kuzo zonke ii-semiconductor, i-photovoltaic, kunye ne-aerospace industry.