I-Silicon Carbide (SiC) Substrate Ecocekileyo Kakhulu Yeeglasi ze-Ar

Inkcazo emfutshane:

Ii-substrates ze-silicon carbide (SiC) ezicocekileyo kakhulu zizinto ezikhethekileyo ezenziwe nge-silicon carbide, ezisetyenziswa kakhulu ekuveliseni izixhobo ze-elektroniki zamandla, izixhobo ze-radio frequency (RF), kunye nezixhobo ze-semiconductor ezinobushushu obuphezulu. I-Silicon carbide, njengesixhobo se-semiconductor esibanzi, inika iipropati ezibalaseleyo zombane, ubushushu, kunye noomatshini, nto leyo eyenza ukuba ifaneleke kakhulu ukusetyenziswa kwiindawo ezine-voltage ephezulu, ezine-frequency ephezulu, kunye ne-high-temperature.

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Iimbonakalo

Umzobo oneenkcukacha

Isishwankathelo seMveliso yeeWafers zeSiC eziNciphisa ubushushu obuphantsi

IiWafers ze-High-Purity Semi-Insulating SiC zenzelwe izixhobo ze-elektroniki eziphucukileyo, izixhobo ze-RF/microwave, kunye nezicelo ze-optoelectronic. Ezi wafers zenziwe ngeekristale ezikumgangatho ophezulu ze-4H- okanye ze-6H-SiC, kusetyenziswa indlela yokukhula ye-Physical Vapor Transport (PVT), elandelwa yi-deep-level compensation annealing. Isiphumo yiwafer eneempawu ezilandelayo ezibalaseleyo:

Ukumelana okuphezulu kakhulu: ≥1×10¹² Ω·cm, nto leyo enciphisa ngempumelelo ukuvuza kwemisinga kwizixhobo zokutshintsha umbane ezine-voltage ephezulu.
Isithuba sebhendi ebanzi (~3.2 eV): Iqinisekisa ukusebenza kakuhle kwiindawo ezinobushushu obuphezulu, ezikwindawo ephezulu, nakwiindawo ezisebenzisa imitha eninzi.
Ukuqhuba okuNgaphandle kobushushu: >4.9 W/cm·K, ebonelela ngokusasaza ubushushu ngokufanelekileyo kwizicelo ezinamandla aphezulu.
Amandla Oomatshini Aphezulu: Ngobunzima beMohs obuyi-9.0 (obesibini emva kwedayimani), ukwanda okuphantsi kobushushu, kunye nozinzo oluqinileyo lweekhemikhali.
Umphezulu Othambileyo Weatomu: Ra < 0.4 nm kunye noxinano lweziphene < 1/cm², ilungele ukwenziwa kwe-MOCVD/HVPE epitaxy kunye ne-micro-nano.

Ubungakanani obufumanekayoUbungakanani obuqhelekileyo buquka i-50, 75, 100, 150, kunye ne-200 mm (2"–8"), kunye nobubanzi obulungiselelwe wena obufikelela kwi-250 mm.
Uluhlu Lobukhulu: 200–1,000 μm, enokunyamezela kwe-±5 μm.

Inkqubo Yokuvelisa IiWafers zeSiC Ezingena Ubushushu Obuncinci

Ukulungiswa komgubo we-SiC ococekileyo kakhulu

Izinto Zokuqala: Umgubo we-SiC webanga le-6N, ocociweyo kusetyenziswa i-vacuum sublimation enezigaba ezininzi kunye nonyango lobushushu, ukuqinisekisa ungcoliseko oluphantsi lwesinyithi (i-Fe, i-Cr, i-Ni <10 ppb) kunye nokufakwa okuncinci kwe-polycrystalline.

Ukukhula kwe-PVT eNye okuGuquliweyo

Okusingqongileyo: I-Near-vacuum (10⁻³–10⁻² Torr).
Ubushushu: I-Graphite crucible eshushu ukuya kuthi ga kwi-~2,500 °C kunye ne-thermal gradient elawulwayo ye-ΔT ≈ 10–20 °C/cm.
Ukuhamba kwegesi kunye noyilo lweCrucible: Izixhobo zokwahlula ezifakwe kwiimbobo nezinemingxuma ziqinisekisa ukusasazwa komphunga okufanayo kwaye zicinezela i-nucleation engafunekiyo.
Ukutya Okuguquguqukayo kunye nokujikeleza: Ukuzaliswa rhoqo kwe-SiC powder kunye ne-crystal-rod rod kubangela ukuba kubekho ukuxinana okuphantsi (<3,000 cm⁻²) kunye nokujonga rhoqo kwe-4H/6H.

Ukuhlaziywa kweMbuyekezo eNzulu

I-Hydrogen Anneal: Yenziwa kwi-atmosphere ye-H₂ kumaqondo obushushu aphakathi kwama-600–1,400 °C ukuze kusebenze imigibe enzulu kunye nokuzinzisa abathwali bangaphakathi.
I-N/Al Co-Doping (Ukhetho): Ukufakwa kwe-Al (ummkeli) kunye ne-N (umnikeli) ngexesha lokukhula okanye emva kokukhula kwe-CVD ukuze kwenziwe izibini ezizinzileyo zomnikeli-ummkeli, nto leyo eqhuba iincopho zokumelana.

Ukusikwa ngokuchanekileyo kunye nokulepha okunezigaba ezininzi

Ukusarha Ngeentambo Zedayimani: Iiwafers ezisikiweyo zibe bubukhulu obuyi-200–1,000 μm, zenza umonakalo omncinci kwaye zinokunyamezela okungaphezulu kwe-±5 μm.
Inkqubo yokulepha: Iziqhoboshi zedayimani eziqobayo nezicolekileyo zisusa umonakalo wesarha, zilungiselela i-wafer ukuba ipholishwe.

Ukupholisha oomatshini beKhemikhali (i-CMP)

Imidiya yokupolisha: I-Nano-oxide (SiO₂ okanye iCeO₂) slurry kwisisombululo se-alkaline esithambileyo.
Ulawulo lweNkqubo: Ukupolisha okunoxinzelelo oluphantsi kunciphisa uburhabaxa, kufikelela uburhabaxa be-RMS obuyi-0.2–0.4 nm kwaye kususa imikrwelo emincinci.

Ukucoca kokugqibela kunye nokuPakisha

Ukucoca nge-Ultrasonic: Inkqubo yokucoca enamanyathelo amaninzi (isinyibilikisi sendalo, unyango lwe-asidi/isiseko, kunye nokuhlamba ngamanzi acocekileyo) kwindawo yokucoca yeClass-100.
Ukutywina kunye nokuPakisha: Ukomisa iiwafer nge-nitrogen purge, zivalwe kwiingxowa zokukhusela ezizaliswe yi-nitrogen kwaye zipakishwe kwiibhokisi zangaphandle ezichasene nokunganyakazi, ezidambisa ukungcangcazela.

Iinkcukacha zeeWafers zeSiC eziNciphisa ubushushu obuphantsi

Ukusebenza kweMveliso	Ibanga P	Ibanga D
I. Iiparameter zeCrystal	I. Iiparameter zeCrystal	I. Iiparameter zeCrystal
Uhlobo lweCrystal Polytype	4H	4H
Isalathisi sokuKhangela a	>2.6 @589nm	>2.6 @589nm
Izinga lokufunxa a	≤0.5% @450-650nm	≤1.5% @450-650nm
Ukudluliselwa kweMP (Okungagqunywanga)	≥66.5%	≥66.2%
Umphunga a	≤0.3%	≤1.5%
Ukubandakanywa kwePolytype a	Ayivumelekanga	Indawo eqokelelweyo ≤20%
Uxinano lweeMicropipe a	≤0.5 /cm²	≤2 /cm²
I-Hexagonal Void a	Ayivumelekanga	N / A
Ukubandakanywa okuBume obuBume	Ayivumelekanga	N / A
Ukubandakanywa kwe-MP	Ayivumelekanga	N / A
II. Iiparameters zoomatshini	II. Iiparameters zoomatshini	II. Iiparameters zoomatshini
Ububanzi	150.0 mm +0.0 mm / -0.2 mm	150.0 mm +0.0 mm / -0.2 mm
Ukujongwa komphezulu	{0001} ±0.3°	{0001} ±0.3°
Ubude obuPhambili obuSicaba	I-Notch	I-Notch
Ubude obuSicaba beSibini	Akukho flethi yesibini	Akukho flethi yesibini
Uqhelaniso lweNotch	<1-100> ±2°	<1-100> ±2°
I-Angle yeNotshi	90° +5° / -1°	90° +5° / -1°
Ubunzulu beNotshi	1 mm ukusuka kumphetho +0.25 mm / -0.0 mm	1 mm ukusuka kumphetho +0.25 mm / -0.0 mm
Unyango Lomphezulu	Ubuso obu-C, ubuso obu-Si: Ukupholisha ngeKhemo-Mechanical (CMP)	Ubuso obu-C, ubuso obu-Si: Ukupholisha ngeKhemo-Mechanical (CMP)
Umphetho weWafer	I-Chamfered (Ejikelezileyo)	I-Chamfered (Ejikelezileyo)
Uburhabaxa bomphezulu (AFM) (5μm x 5μm)	Si-ubuso, C-ubuso: Ra ≤ 0.2 nm	Si-ubuso, C-ubuso: Ra ≤ 0.2 nm
Ubukhulu (iTropel)	500.0 μm ± 25.0 μm	500.0 μm ± 25.0 μm
I-LTV (iTropel) (40mm x 40mm) a	≤ 2 μm	≤ 4 μm
Utshintsho lweTotal Thickness (TTV) a (Tropel)	≤ 3 μm	≤ 5 μm
I-Bow (Ixabiso elipheleleyo) a (Tropel)	≤ 5 μm	≤ 15 μm
I-Warp a (iTropel)	≤ 15 μm	≤ 30 μm
III. Iiparameters zomphezulu	III. Iiparameters zomphezulu	III. Iiparameters zomphezulu
Itshiphu/Inotshi	Ayivumelekanga	≤ ii-pcs ezi-2, ubude nobubanzi ngabunye ≤ 1.0 mm
Krwela i-a (Si-face, CS8520)	Ubude obupheleleyo ≤ 1 x Ububanzi	Ubude obupheleleyo ≤ 3 x Ububanzi
I-Particle a (Si-face, CS8520)	≤ ii-pcs ezingama-500	N / A
Iqhekezo	Ayivumelekanga	Ayivumelekanga
Ungcoliseko	Ayivumelekanga	Ayivumelekanga

Izicelo eziphambili zeeWafers zeSiC eziNciphisa ubushushu obuphantsi

Izixhobo zombane ezinamandla aphezulu: IiMOSFET ezisekelwe kwiSiC, iidiode zeSchottky, kunye neemodyuli zamandla zezithuthi zombane (ii-EV) ziyaxhamla kwizakhono zeSiC zokuxhathisa okuphantsi kunye namandla aphezulu e-voltage.
I-RF kunye ne-Microwave: Ukusebenza kwe-SiC okune-frequency ephezulu kunye nokumelana nemitha kulungele ii-amplifiers ze-5G base-station, iimodyuli ze-radar, kunye nonxibelelwano lwesathelayithi.
I-Optoelectronics: Ii-UV-LED, ii-blue-laser diodes, kunye nee-photodetectors zisebenzisa ii-substrates ze-SiC ezigudileyo ngokweathom ukuze zikhule ngendlela efanayo kwi-epitaxial.
Ukuqonda Okugqithisileyo Kwendalo: Uzinzo lweSiC kumaqondo obushushu aphezulu (>600 °C) luyenza ifaneleke kakhulu kwiisensa kwiindawo ezinzima, kuquka iiturbine zegesi kunye nezixhobo zokufumanisa inyukliya.
Inqwelo-moya kunye noKhuseloI-SiC inika ukuqina kwezixhobo ze-elektroniki ezisebenza ngamandla kwiisathelayithi, iinkqubo zeerokhethi, kunye nezixhobo ze-elektroniki zeenqwelo-moya.
Uphando oluPhambili: Izisombululo ezenziwe ngokwezifiso ze-quantum computing, ii-micro-optics, kunye nezinye izicelo zophando ezikhethekileyo.

Imibuzo ebuzwa rhoqo

Kutheni i-SiC ene-semi-insulation ngaphezu kwe-SiC eqhubayo?
I-SiC ethintela ubushushu obuphantsi inika amandla aphezulu okumelana nobushushu, nto leyo enciphisa ukuvuza kwamanzi kwizixhobo ezine-voltage ephezulu kunye ne-frequency ephezulu. I-SiC eqhubayo ifanelekile ngakumbi kwiizicelo apho kufuneka khona umbane oqhubayo.
Ngaba ezi wafers zingasetyenziselwa ukukhula kwe-epitaxial?
Ewe, ezi wafers zilungele i-epi kwaye zilungele i-MOCVD, i-HVPE, okanye i-MBE, kunye nonyango lomphezulu kunye nolawulo lweziphene ukuqinisekisa umgangatho ophezulu womaleko we-epitaxial.
Uqinisekisa njani ukuba i-wafer icocekile?
Inkqubo yokucoca igumbi leClass-100, ukucoca nge-ultrasound okunezinyathelo ezininzi, kunye nokupakishwa okutywinwe yi-nitrogen kuqinisekisa ukuba ii-wafers azinazo izinto ezingcolisayo, iintsalela, kunye nemikrwelo emincinci.
Lingakanani ixesha lokunikezelwa kwee-odolo?
Iisampulu zihlala zithunyelwa kwiintsuku ezisi-7 ukuya kwezili-10 zokusebenza, ngelixa iiodolo zemveliso zihlala zithunyelwa kwiiveki ezi-4 ukuya kwezi-6, kuxhomekeke kubungakanani be-wafer ethile kunye neempawu ezenziwe ngokwezifiso.
Ngaba ungabonelela ngeemilo ezenziwe ngokwezifiso?
Ewe, singadala ii-substrates ezenziwe ngokwezifiso kwiimo ezahlukeneyo ezifana neefestile ezicwangcisiweyo, ii-V-grooves, iilensi ezingqukuva, nokunye.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.