Izixhobo Zokukhulisa Ingot zeSapphire Indlela yeCzochralski CZ Yokuvelisa IiWafers zeSapphire eziyi-2inch-12inch

Inkcazo emfutshane:

Izixhobo Zokukhulisa Ingot zeSapphire (iCzochralski Method)yinkqubo yanamhlanje eyenzelwe ukukhula kwe-sapphire single-crystal okucocekileyo kakhulu, okuneziphene eziphantsi. Indlela yeCzochralski (CZ) ivumela ulawulo oluchanekileyo lwesantya sokutsala ikristale yembewu (0.5–5 mm/h), izinga lokujikeleza (5–30 rpm), kunye ne-gradients yobushushu kwi-iridium crucible, ivelisa iikristale ezilinganayo ukuya kuthi ga kwi-12 intshi (300 mm) ububanzi. Esi sixhobo sixhasa ulawulo lwe-C/A-plane crystal orientation, oluvumela ukukhula kwe-optical-grade, electronic-grade, kunye ne-doped sapphire (umz., i-Cr³⁺ ruby, i-Ti³⁺ star sapphire).

I-XKH ibonelela ngezisombululo eziqala ekupheleni, kuquka ukwenziwa ngokwezifiso kwezixhobo (ukuveliswa kwe-wafer ye-intshi ezi-2–12), ukwenziwa ngcono kwenkqubo (ubuninzi beziphene <100/cm²), kunye noqeqesho lobugcisa, kunye nokuveliswa kwe-wafers zenyanga ezingama-5,000+ kwizicelo ezifana ne-LED substrates, i-GaN epitaxy, kunye nokupakishwa kwe-semiconductor.

Thumela i-imeyile kuthi

Iimbonakalo

Umgaqo Wokusebenza

Indlela ye-CZ isebenza ngala manyathelo alandelayo:
1. Ukunyibilikisa Izinto Ezingavuthwanga: I-Al₂O₃ (ubumsulwa >99.999%) inyibilikiswa kwi-iridium crucible kwi-2050–2100°C.
2. Intshayelelo yeKrisimesi yeMbewu: Ikristali yembewu ithotywa kwindawo enyibilikayo, ilandelwe kukutsalwa ngokukhawuleza ukuze kwenziwe intamo (ububanzi obungaphantsi kwe-1 mm) ukuze kupheliswe ukukhubeka.
3. Ukwakheka kwamagxa kunye nokukhula kobuninzi: Isantya sokutsala siyancitshiswa siye kwi-0.2–1 mm/h, sandisa kancinci ububanzi bekristale ukuya kubukhulu obujoliswe kubo (umz., ii-intshi ezi-4–12).
4. Ukugquma kunye nokuPholisa: Ikristale ipholiswa kwi-0.1–0.5°C/min ukunciphisa ukuqhekeka okubangelwa luxinzelelo lobushushu.
5. Iintlobo zeCrystal ezihambelanayo:
Udidi lwe-elektroniki: Ii-substrates ze-semiconductor (TTV <5 μm)
Udidi lwe-Optical: Iifestile ze-UV laser (ukudluliselwa >90%@200 nm)
Iindidi ezifakwe idosi: I-Ruby (uxinzelelo lwe-Cr³⁺ 0.01–0.5 wt.%), ityhubhu yesafire eluhlaza okwesibhakabhaka

Izinto eziphambili zeNkqubo

1. Inkqubo yokunyibilikisa
I-Iridium Crucible: Ayimelani namaqondo obushushu angama-2300°C, ayimelani nokugqwala, ihambelana nezinyibiliki ezinkulu (100–400 kg).
Isithando Sokufudumeza Esingeniswayo: Ulawulo lobushushu oluzimeleyo oluneendawo ezininzi (±0.5°C), iigradients zobushushu ezilungiselelweyo.

2. Inkqubo yokutsala kunye nokujikeleza
I-High-Precision Servo Motor: Isisombululo sokutsala esingu-0.01 mm/h, ukujikeleza okungqongqo <0.01 mm.
Itywina leMagnetic Fluid: Ukudluliselwa okungadibaniyo kokukhula okuqhubekayo (iiyure ezingaphezu kwama-72).

3. Inkqubo yoLawulo loBushushu
Ulawulo lwe-PID Closed-Loop: Uhlengahlengiso lwamandla ngexesha langempela (50–200 kW) ukuzinzisa intsimi yobushushu.
Ukhuseleko lweGesi engasebenziyo: Umxube we-Ar/N₂ (ubumsulwa be-99.999%) ukuthintela i-oxidation.

4. Ukuzenzekelayo kunye nokuBeka esweni
Ukubeka esweni ububanzi be-CCD: Ingxelo ngexesha langempela (ukuchaneka ± 0.01 mm).
I-Infrared Thermography: Ijonga imo ye-interface ye-solid-liquid.

Uthelekiso lweNdlela ye-CZ vs. KY

Ipharamitha	Indlela ye-CZ	Indlela ye-KY
Ubungakanani obukhulu bekristale	Ii-intshi ezili-12 (300 mm)	I-400 mm (i-ingot efana nepeya)
Uxinano olupheleleyo	<100/cm²	<50/cm²
Izinga lokukhula	0.5–5 mm/h	0.1–2 mm/h
Ukusetyenziswa kwamandla	50–80 kWh/kg	80–120 kWh/kg
Izicelo	Ii-substrates ze-LED, i-GaN epitaxy	Iifestile ezibonakalayo, ii-ingots ezinkulu
Ixabiso	Utyalo-mali oluphakathi (oluphezulu kwizixhobo)	Inkqubo ephezulu (entsonkothileyo)

Izicelo eziphambili

1. Ishishini le-Semiconductor
I-GaN Epitaxial Substrates: Ii-wafers eziyi-2–8-intshi (TTV <10 μm) zeMicro-LEDs kunye nee-laser diodes.
Ii-SOI Wafers: Uburhabaxa bomphezulu <0.2 nm kwiitships ezidityaniswe nge-3D.

2. I-Optoelectronics
Iifestile zeLaser ye-UV: Zimelana noxinano lwamandla angama-200 W/cm² kwi-lithography optics.
Izinto ze-Infrared: I-coefficient yokufunxa <10⁻³ cm⁻¹ yomfanekiso wobushushu.

3. Izixhobo ze-elektroniki zabathengi
Izigqubuthelo zeKhamera zeSmartphone: Ukuqina kweMohs 9, 10× ukuphuculwa kokumelana nokukrwela.
IiSkrini zeSmartwatch: Ubukhulu 0.3–0.5 mm, itransmittance >92%.

4. Ukhuselo kunye ne-Aerospace
Iifestile zeNuclear Reactor: Ukunyamezela imitha ukuya kuthi ga kwi-10¹⁶ n/cm².
Izibuko zeLaser ezinamandla aphezulu: Ukuguqulwa kobushushu <λ/20@1064 nm.

Iinkonzo ze-XKH

1. Ukwenziwa ngokwezifiso kwezixhobo
Uyilo lweGumbi eliKhululekileyo: Ulungelelwaniso lwe-Φ200–400 mm lokuvelisa i-wafer ye-intshi ezi-2–12.
Ukuguquguquka kwe-Doping: Ixhasa i-rare-earth (Er/Yb) kunye ne-transition-metal (Ti/Cr) doping kwiipropati ze-optoelectronic ezenzelwe wena.

2. Inkxaso yokuphela
Ukuphucula Inkqubo: Iiresiphi eziqinisekisiweyo kwangaphambili (50+) zezixhobo ze-LED, ze-RF, kunye nezixhobo eziqiniswe ngemitha.
Inethiwekhi yeNkonzo yeHlabathi: Ukuxilongwa okukude iiyure ezingama-24 ngosuku, iintsuku ezisixhenxe ngeveki kunye nokugcinwa kwindawo kunye newaranti yeenyanga ezingama-24.

3. Ukucutshungulwa okusezantsi
Ukwenziwa kweWafer: Ukusika, ukugaya, kunye nokupolisha iiwafers ezingama-2–12-intshi (C/A-plane).
Iimveliso Ezongezwe Ngexabiso:
Izinto ezibonakalayo: Iifestile ze-UV/IR (ubukhulu obuyi-0.5–50 mm).
Izinto zodidi lobucwebe: I-Cr³⁺ ruby (eqinisekiswe yi-GIA), i-Ti³⁺ inkwenkwezi yesafire.

4. UbuNkokheli boBugcisa
Iziqinisekiso: Iiwafers ezithobela i-EMI.
Amalungelo obunikazi: Amalungelo obunikazi aphambili kwindlela entsha ye-CZ.

Isiphelo

Izixhobo zendlela ye-CZ zibonelela ngokuhambelana okukhulu, amazinga aphantsi kakhulu eziphene, kunye nozinzo oluphezulu lwenkqubo, nto leyo eyenza ukuba ibe luphawu loshishino lwe-LED, i-semiconductor, kunye nezicelo zokhuselo. I-XKH inika inkxaso epheleleyo ukusuka ekusetyenzisweni kwezixhobo ukuya ekucutshungulweni emva kokukhula, ivumela abathengi ukuba bafezekise imveliso yekristale yesafire esebenza kakuhle nengabizi kakhulu.