Iimveliso
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I-SiC Ingot yokuKhula iFunese yeSiC Crystal eNkulu-Diameter ye-SiC Crystal TSSG/LPE Iindlela
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Isixhobo sokusika iLaser ye-Infrared Picosecond Dual-Platform yeLaser yeOptical Glass/Quartz/Sapphire Processing
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Ilitye elinqabileyo elinoMbala eliLigugu eliMhlophe leSapphire yobucwebe bokuSika ubungakanani obuMahala
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I-SiC ceramic end effector enikezela ingalo yokuphatha iwafer
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4inch 6inch 8inch SiC Crystal Growth Furnace for CVD Process
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I-6 Intshi ye-4H SEMI Uhlobo lwe-SiC edibeneyo ye-substrate Ukutyeba 500μm TTV≤5μm ibakala le-MOS
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Iinxalenye zeSapphire eziLungiselelweyo eziMele ngeSapphire zeWindows ezinoKucocwa kokuGcwalisa
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SiC ceramic ipleyiti / itreyi for 4inch 6inch isibambi wafer for ICP
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Ifestile yeSapphire eyenziwe ngokweSiko yoBulukhuni obuphakamileyo beZikrini ze-smartphone
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I-intshi ye-12 ye-SiC Substrate N yoHlobo olukhulu Ubungakanani obuKhulu obuPhezulu bokusebenza kwe-RF yezicelo
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Isiko N Uhlobo lweSiC yeMbewu Substrate Dia153/155mm yoMbane woMbane
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Isixhobo soKwemba iLaser yeNanosecond ye-Infrared yeGlasi yoKwemba ubukhulu≤20mm