Ukutyhila uYilo kunye nokuVeliswa kweeChips zeSilicon Carbide (SiC): Ukusuka kwiZiseko ukuya kwiSicelo

IiSilicon Carbide (SiC) MOSFET zizixhobo ze-semiconductor zamandla ezisebenza kakuhle kakhulu eziye zabaluleka kumashishini aqala kwizithuthi zombane kunye namandla avuselelekayo ukuya kwi-automation yemizi-mveliso. Xa kuthelekiswa nee-silicon (Si) MOSFET zemveli, ii-SiC MOSFET zibonelela ngokusebenza okuphezulu phantsi kweemeko ezinzima, kubandakanya amaqondo obushushu aphezulu, ii-voltage, kunye namaza. Nangona kunjalo, ukufikelela ekusebenzeni kakuhle kwizixhobo zeSiC kudlula nje ekufumaneni ii-substrates ezikumgangatho ophezulu kunye nee-epitaxial layers—kufuna uyilo olucokisekileyo kunye neenkqubo zokuvelisa eziphambili. Eli nqaku libonelela ngophando olunzulu lwesakhiwo soyilo kunye neenkqubo zokuvelisa ezivumela ii-SiC MOSFET ezisebenza kakuhle.

1. Uyilo lweSakhiwo seChip: Uyilo oluchanekileyo ukuze lusebenze kakuhle

Uyilo lweeSiC MOSFET luqala ngoyilo lweI-SiC wafer, esisiseko sazo zonke iimpawu zesixhobo. Itshiphu yeSiC MOSFET eqhelekileyo ineenxalenye ezibalulekileyo kumphezulu wayo, kuquka:

• Umthombo wePad

• I-Gate Pad

• Iphedi yomthombo kaKelvin

IIsangqa Sokuphelisa Umda(okanyeIndandatho yoxinzelelo) lolunye uphawu olubalulekileyo olufumaneka ejikeleze itshiphusi. Le ring inceda ukuphucula i-voltage yokuqhekeka kwesixhobo ngokunciphisa uxinzelelo lwentsimi yombane emaphethelweni etshiphusi, ngaloo ndlela ithintela ukuvuza kwemisinga kunye nokuphucula ukuthembeka kwesixhobo. Ngokwesiqhelo, i-Edge Termination Ring isekelwe kwiUlwandiso lokuPheliswa kweJunction (JTE)isakhiwo, esisebenzisa i-deep doping ukuphucula usasazo lwentsimi yombane kunye nokuphucula i-voltage yokuqhekeka kwe-MOSFET.

2. Iiseli Ezisebenzayo: Undoqo Wokutshintsha Ukusebenza

IIiseli EzisebenzayoKwi-SiC MOSFET zinoxanduva lokuqhuba nokutshintsha kwamandla ombane. Ezi seli zicwangciswe ngaxeshanye, inani leeseli lichaphazela ngokuthe ngqo amandla okumelana nombane (ii-Rds(on)) kunye nomthamo wamandla ombane wesixhobo. Ukuze kuphuculwe ukusebenza, umgama phakathi kweeseli (owaziwa ngokuba yi-"cell pitch") uyancitshiswa, nto leyo ephucula ukusebenza kakuhle kokuqhuba kwamandla ombane.

Iiseli ezisebenzayo zinokuyilwa ngeendlela ezimbini eziphambili zokwakha:isicwangcisokwayeumseleizakhiwo. Isakhiwo esicwangcisiweyo, nangona silula kwaye sithembekile ngakumbi, sinemida ekusebenzeni ngenxa yesithuba seeseli. Ngokwahlukileyo koko, izakhiwo zemisele zivumela ukulungelelaniswa kweeseli ezinoxinano oluphezulu, zinciphisa ii-Rds(on) kwaye zivumela ukuphathwa kombane okuphezulu. Ngelixa izakhiwo zemisele zifumana ukuthandwa ngenxa yokusebenza kwazo okuphezulu, izakhiwo zemisele zisanikezela ngokuthembeka okuphezulu kwaye ziyaqhubeka nokulungiswa kwizicelo ezithile.

3. Ulwakhiwo lwe-JTE: Ukuphucula ukuVimba kweVoltha

IUlwandiso lokuPheliswa kweJunction (JTE)ulwakhiwo luphawu oluphambili loyilo kwi-SiC MOSFETs. I-JTE iphucula amandla okuthintela i-voltage yesixhobo ngokulawula ukusasazwa kwentsimi yombane kwimiphetho yetship. Oku kubalulekile ekuthinteleni ukuqhekeka kwangaphambi kwexesha kumphetho, apho amasimi ombane aphezulu ahlala exinene.

Ukusebenza kakuhle kwe-JTE kuxhomekeke kwizinto ezininzi:

• Ububanzi beSithili se-JTE kunye neNqanaba lokuDopa: Ububanzi bommandla we-JTE kunye noxinzelelo lwee-dopants kumisela ukusasazwa kwentsimi yombane kwimiphetho yesixhobo. Ummandla we-JTE obanzi nonamandla kakhulu unokunciphisa intsimi yombane kwaye wonyuse i-voltage yokuqhekeka.

• I-Angle kunye nobunzulu beKhowuni ye-JTE: I-engile kunye nobunzulu bekhowuni ye-JTE buchaphazela ukusasazwa kwentsimi yombane kwaye ekugqibeleni buchaphazela i-voltage yokuqhekeka. I-engile yekhowuni encinci kunye nommandla onzulu we-JTE kunceda ekunciphiseni amandla entsimi yombane, ngaloo ndlela kuphucula amandla esixhobo okumelana nee-voltage eziphezulu.

• Ukudlula komphezulu: Umaleko wokudluliswa kwamanzi kumphezulu udlala indima ebalulekileyo ekunciphiseni imisinga yokuvuza kwamanzi kumphezulu kunye nokuphucula i-voltage yokuqhekeka. Umaleko wokudluliswa kwamanzi olungiselelwe kakuhle uqinisekisa ukuba isixhobo sisebenza ngokuthembekileyo nokuba sikwi-voltage ephezulu.

Ulawulo lobushushu lolunye uqwalaselo olubalulekileyo kuyilo lwe-JTE. Ii-SiC MOSFET ziyakwazi ukusebenza kumaqondo obushushu aphezulu kunee-silicon, kodwa ubushushu obugqithisileyo bunokonakalisa ukusebenza kwesixhobo kunye nokuthembeka kwaso. Ngenxa yoko, uyilo lobushushu, kubandakanya ukuchithwa kobushushu kunye nokunciphisa uxinzelelo lobushushu, lubalulekile ekuqinisekiseni uzinzo lwesixhobo ixesha elide.

4. Ukutshintsha Iilahleko kunye nokuxhathisa ukuQhuba: Ukuphucula ukusebenza

Kwi-SiC MOSFETs,ukumelana nokuqhuba(IiRds(on)) kunyeilahleko zokutshintshaZimbini izinto ezibalulekileyo ezimisela ukusebenza kakuhle ngokubanzi. Ngelixa i-Rds(on) ilawula ukusebenza kakuhle kokuqhuba kwamandla, ilahleko zokutshintsha zenzeka ngexesha lotshintsho phakathi kweemeko zokungena nokuphuma kwamandla, nto leyo enegalelo ekuvelisweni kobushushu kunye nokulahleka kwamandla.

Ukuze kuphuculwe ezi parameters, kufuneka kuqwalaselwe izinto ezininzi zoyilo:

• Iphimbo leSeli: Iphimbo, okanye isithuba phakathi kweeseli ezisebenzayo, sidlala indima ebalulekileyo ekumiseleni ii-Rds(on) kunye nesantya sokutshintsha. Ukunciphisa iphimbo kuvumela uxinano olukhulu lweeseli kunye nokumelana okuphantsi kokuqhuba, kodwa ubudlelwane phakathi kobukhulu bephimbo kunye nokuthembeka kwesango kufuneka bulinganiswe ukuze kuthintelwe ukuvuza okugqithisileyo.

• Ubukhulu beSango le-Oxide: Ubukhulu bomaleko we-gate oxide buchaphazela amandla e-gate, nto leyo echaphazela isantya sokutshintsha kunye nee-Rds(on). I-thinner gate oxide yonyusa isantya sokutshintsha kodwa ikwanyusa nomngcipheko wokuvuza kwe-gate. Ke ngoko, ukufumana ubukhulu be-gate oxide obufanelekileyo kubalulekile ekulinganiseni isantya kunye nokuthembeka.

• Ukumelana neSango: Ukumelana kwezinto zesango kuchaphazela isantya sokutshintsha kunye nokumelana nokuqhuba kombane ngokubanzi. Ngokudibanisaukumelana nesangoxa ingena ngqo kwi-chip, uyilo lwemodyuli luba lula ngakumbi, nto leyo enciphisa ubunzima kunye neendawo ezinokwenzeka zokusilela kwinkqubo yokupakisha.

5. Ukumelana neSango eliDibeneyo: Ukwenza lula uyilo lweModyuli

Kwezinye iidizayini zeSiC MOSFET,ukumelana kwesango elidibeneyoisetyenziswa, nto leyo eyenza kube lula ukuyila imodyuli kunye nenkqubo yokuvelisa. Ngokususa imfuneko yee-resistors zangaphandle zesango, le ndlela inciphisa inani lezinto ezifunekayo, inciphisa iindleko zokuvelisa, kwaye iphucula ukuthembeka kwemodyuli.

Ukufakwa kokumelana kwesango ngqo kwi-chip kubonelela ngeenzuzo ezininzi:

• Indibano yeModyuli elula: Ukumelana nesango elidibeneyo kwenza lula inkqubo yokufakelwa kweentambo kwaye kunciphisa umngcipheko wokungaphumeleli.

• Ukuncitshiswa kweendlekoUkususa izinto zangaphandle kunciphisa iindleko zezinto (i-BOM) kunye neendleko zokuvelisa zizonke.

• Ukuguquguquka Kokupakisha Okuphuculweyo: Ukuhlanganiswa kokumelana neengcango kuvumela uyilo lweemodyuli ezixineneyo nezisebenzayo, nto leyo ekhokelela ekuphuculweni kokusetyenziswa kwendawo ekupakishweni kokugqibela.

6. Isiphelo: Inkqubo yoYilo oluQhelekileyo lweZixhobo eziPhambili

Ukuyila nokuvelisa iiSiC MOSFET kubandakanya ukusebenzisana okuntsonkothileyo kweeparamitha ezininzi zoyilo kunye neenkqubo zokuvelisa. Ukususela ekuphuculeni uyilo lwetship, uyilo lweseli esebenzayo, kunye nezakhiwo zeJTE, ukuya ekunciphiseni ukumelana nokuqhuba kunye nokulahleka kokutshintsha, into nganye yesixhobo kufuneka ilungiswe kakuhle ukuze kufezekiswe ukusebenza okungcono kakhulu.

Ngenxa yokuqhubela phambili okuqhubekayo kubuchwepheshe boyilo kunye nokuvelisa, iiSiC MOSFET ziya zisiba zisebenza kakuhle, zithembekile, kwaye zixabisa kancinci. Njengoko imfuno yezixhobo ezisebenza kakuhle nezisebenzisa amandla kakuhle ikhula, iiSiC MOSFET zikulungele ukudlala indima ebalulekileyo ekunikezeni amandla kwisizukulwana esilandelayo seenkqubo zombane, ukusuka kwizithuthi zombane ukuya kwiigridi zamandla ahlaziyekayo nangaphezulu.