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I-TSMC itshixa iSilicon Carbide eyi-12-intshi kwiNew Frontier, ukusasazwa ngobuchule kwizixhobo zolawulo lobushushu ezibalulekileyo ze-AI Era​

Isiqulatho

1. Utshintsho lweTekhnoloji: Ukunyuka kweSilicon Carbide kunye nemingeni yayo

2. Utshintsho oluCwangcisiweyo lweTSMC: Ukuphuma kwiGaN kunye nokubheja kwiSiC

3. Ukhuphiswano lwezinto eziphathekayo: Ukungathathelwa indawo kweSiC

4. Iimeko zeSicelo: Uguquko loLawulo lweThermal kwii-AI Chips kunye nee-Elektroniki ze-Next-Gen​

5. Imingeni yexesha elizayo: Iingxaki zobugcisa kunye nokhuphiswano lweshishini

Ngokutsho kweTechNews, ishishini le-semiconductor lehlabathi lingene kwixesha eliqhutywa bubukrelekrele bokwenziwa (AI) kunye nekhompyutha esebenza kakuhle (HPC), apho ulawulo lobushushu luye lwavela njengengxaki ephambili echaphazela uyilo lweetshiphusi kunye nophuhliso lwenkqubo. Njengoko uyilo oluphambili lokupakisha olufana nokubeka i-3D kunye nokuhlanganiswa kwe-2.5D luqhubeka nokunyusa uxinano lweetshiphusi kunye nokusetyenziswa kwamandla, ii-substrates ze-ceramic zendabuko azisenakwanelisa iimfuno zobushushu. I-TSMC, inkampani ekhokelayo kwihlabathi yokuseka iiwafer, iphendula kulo mngeni ngotshintsho olukhulu lwezinto: yamkela ngokupheleleyo ii-substrates ze-silicon carbide (SiC) ze-intshi ezili-12 ngelixa iphuma kancinci kancinci kwishishini le-gallium nitride (GaN). Olu tshintsho alubonisi nje kuphela uhlengahlengiso lwesicwangciso sezinto ze-TSMC kodwa lukwagxininisa indlela ulawulo lobushushu olutshintshe ngayo ukusuka "kubuchwepheshe obuxhasayo" ukuya "kwinzuzo yokhuphiswano oluphambili."

 

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I-Silicon Carbide: Ngaphaya kwamandla e-elektroniki

I-silicon carbide, eyaziwa ngeempawu zayo ezibanzi ze-bandgap semiconductor, isetyenziswa ngokwesiko kwi-electronics ezisebenza kakuhle kakhulu ezifana nee-inverters zezithuthi zombane, ulawulo lweemoto zoshishino, kunye neziseko zamandla avuselelekayo. Nangona kunjalo, amandla e-SiC adlula lee oku. Ngombane ogqithisileyo ohamba malunga ne-500 W/mK—udlula kakhulu ii-substrates ze-ceramic eziqhelekileyo ezifana ne-aluminium oxide (Al₂O₃) okanye i-sapphire—i-SiC ngoku ikulungele ukujongana nemingeni yobushushu eyandayo yezicelo zobuninzi obukhulu.

 https://www.xkh-semitech.com/sic-substrate-epi-wafer-conductivesemi-type-4-6-8-inch-product/

 

Ii-AI Accelerators kunye neNgxaki yoBushushu

Ukwanda kwee-accelerator ze-AI, iiprosesa zeziko ledatha, kunye neeglasi ezikrelekrele ze-AR kuye kwaqinisa imida yendawo kunye neengxaki zolawulo lobushushu. Kwizixhobo ezinxitywayo, umzekelo, izinto ze-microchip ezibekwe kufutshane neliso zifuna ulawulo oluchanekileyo lobushushu ukuqinisekisa ukhuseleko kunye nozinzo. Isebenzisa iminyaka yayo yobuchule bokwenza i-wafer ye-intshi ezili-12, i-TSMC iphuhlisa ii-substrates ze-SiC ze-single-crystal ezinkulu ukuze zithathe indawo yeeseramikhi zendabuko. Eli cebo livumela ukuhlanganiswa okungenamthungo kwimigca yemveliso ekhoyo, ukulinganisela isivuno kunye neenzuzo zeendleko ngaphandle kokufuna uhlengahlengiso olupheleleyo lokuvelisa.

 

Imingeni yoBugcisa kunye noBuchule.

Nangona ii-substrates ze-SiC zolawulo lobushushu zingadingi imigangatho eqinileyo yeziphene zombane ezifunwa zizixhobo zamandla, ukuthembeka kwekristale kusabalulekile. Izinto zangaphandle ezifana nokungcola okanye uxinzelelo zinokuphazamisa ukuhanjiswa kwe-phonon, zonakalise ukuhanjiswa kobushushu, kwaye zibangele ubushushu obuphezulu bendawo, ekugqibeleni zichaphazele amandla oomatshini kunye nokuthamba komphezulu. Kwii-wafers ze-intshi ezili-12, i-warpage kunye ne-deformation zezona zinto zibalulekileyo, njengoko zichaphazela ngokuthe ngqo i-chip bonding kunye ne-advanced packaging leeves. Ingqwalasela kushishino ke ngoko itshintshe ukusuka ekususeni iziphene zombane ukuya ekuqinisekiseni uxinano olufanayo lwe-bulk, i-porosity ephantsi, kunye ne-high surface planarity—izinto ezifunekayo kwimveliso ye-high-vield SiC thermal substrate mass mass.

 

https://www.xkh-semitech.com/silicon-carbide-sic-single-crystal-substrate-10x10mm-wafer-product/

.Indima yeSiC kwiPakethe ePhambili

Indibaniselwano yeSiC yokuqhuba okuphezulu kobushushu, ukomelela koomatshini, kunye nokumelana nokutshayiswa kobushushu ibeka inguqu enkulu kupakisho lwe-2.5D kunye ne-3D:

 
  • Udibaniso lwe-2.5D:Iitships zifakelwa kwi-silicon okanye kwi-organic interposer ezineendlela ezimfutshane nezisebenzayo zesignali. Imingeni yokusasaza ubushushu apha ikakhulu ixhomekeke ngokuthe tye.
  • Ukuhlanganiswa kwe-3D:Iitships ezibekwe ngokuthe nkqo nge-through-silicon vias (ii-TSV) okanye i-hybrid bonding ifikelela kwi-interconnect density ephezulu kakhulu kodwa ijongene noxinzelelo lwe-exponential thermal. I-SiC ayisebenzi nje kuphela njengezinto ezishushu ezingasebenziyo kodwa ikwasebenzisana nezisombululo eziphambili ezifana nedayimani okanye isinyithi esilulwelo ukwenza iinkqubo "zokupholisa ezihlanganisiweyo".

 

.Ukuphuma kwiGaN

I-TSMC ibhengeze izicwangciso zokuphelisa imisebenzi yeGaN ngo-2027, isasaza izixhobo kwiSiC. Esi sigqibo sibonisa uhlengahlengiso olucwangcisiweyo: ngelixa iGaN igqwesa kwizicelo ezisetyenziswa rhoqo, amandla olawulo olupheleleyo lobushushu beSiC kunye nokukhula kwayo kuhambelana ngcono nombono wexesha elide weTSMC. Utshintsho oluya kwiiwafers ze-intshi ezili-12 luthembisa ukunciphisa iindleko kunye nokuphucula ukufana kwenkqubo, nangona kukho imingeni ekusikeni, ekupoliseni, nasekucwangciseni.

 

Ngaphaya kwezeMoto: IiMida eziNtsha zeSiC

Ngokwembali, iSiC ibisoloko isetyenziswa njengezixhobo zamandla eemoto. Ngoku, iTSMC icinga ngokutsha ngezicelo zayo:

 
  • I-SiC yohlobo lwe-N oluqhubayo​​:Isebenza njengabasasazi bobushushu kwii-accelerator ze-AI kunye neeprosesa ezisebenzayo.
  • Ukukhusela i-SiC:Isebenza njengezixhobo zokudibanisa uyilo lwe-chiplet, ilungelelanisa ukwahlulwa kombane kunye nokuhanjiswa kobushushu.

Ezi zinto zintsha zibeka iSiC njengezixhobo ezisisiseko zolawulo lobushushu kwi-AI kunye neetships zeziko ledatha.

 

https://www.xkh-semitech.com/4h-n6h-n-sic-wafer-reasearch-production-dummy-grade-dia150mm-silicon-carbide-substrate-product/

 

​​​​​Imbonakalo Yezinto Ezibonakalayo

Ngelixa idayimani (1,000–2,200 W/mK) kunye negraphene (3,000–5,000 W/mK) zibonelela ngokuhanjiswa kobushushu okuphezulu, iindleko zazo eziphezulu kunye nemida yokukhula iyathintela ukwamkelwa ngokubanzi. Ezinye iindlela ezifana nesinyithi esilulwelo okanye ukuhlanganiswa kobuso bokupholisa obuncinci kunye nemiqobo yeendleko. "Indawo entle" yeSiC—ukudibanisa ukusebenza, amandla oomatshini, kunye nokwenziwa kwayo—yenza ibe sisisombululo esisebenzayo.
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Ukhuphiswano lweTSMC

Ubuchule be-TSMC be-wafer obuziisentimitha ezili-12 buyayahlula kwabakhuphisana nabo, nto leyo evumela ukusasazwa ngokukhawuleza kwamaqonga e-SiC. Ngokusebenzisa iziseko ezikhoyo kunye nobuchwepheshe obuphambili bokupakisha njengeCoWoS, i-TSMC ijolise ekuguquleni izibonelelo zezinto ezibonakalayo zibe zizisombululo zobushushu ezikumgangatho wenkqubo. Kwangaxeshanye, iingxilimbela zoshishino ezifana ne-Intel zibeka phambili ukuhanjiswa kwamandla ngasemva kunye noyilo oludibeneyo lwamandla obushushu, nto leyo egxininisa utshintsho lwehlabathi oluya kwintsha egxile kubushushu.

Ixesha leposi: Sep-28-2025
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