Kwii-diode ezikhupha ukukhanya (ii-LED) ezisekelwe kwi-GaN, inkqubela phambili eqhubekayo kwiindlela zokukhula kwe-epitaxial kunye noyilo lwezixhobo iqhubele phambili ukusebenza kakuhle kwe-quantum (IQE) kufutshane kakhulu neyona nto iphambili. Nangona le nkqubela phambili, ukusebenza okukhanyayo kwee-LED kuhlala kuncitshiswe ngokusisiseko kukusebenza kakuhle kokukhupha ukukhanya (i-LEE). Njengoko i-sapphire iqhubeka nokuba yinto ephambili kwi-epitaxy ye-GaN, i-surface morphology yayo idlala indima ebalulekileyo ekulawuleni ilahleko ze-optical ngaphakathi kwesixhobo.
Eli nqaku libonisa uthelekiso olubanzi phakathi kwe-flat sapphire substrates kunye ne-patternedii-substrates zesafire (PSS)Icacisa iindlela zokukhanya kunye ne-crystallographic apho i-PSS iphucula khona ukusebenza kakuhle kokukhupha ukukhanya kwaye ichaza isizathu sokuba i-PSS ibe ngumgangatho oqhelekileyo kwimveliso ye-LED esebenza kakhulu.

1. Ukusebenza kakuhle kokukhupha ukukhanya njengengxaki esisiseko
Ukusebenza kakuhle kwe-quantum yangaphandle (i-EQE) ye-LED kugqitywa yimveliso yezinto ezimbini eziphambili:
EQE=IQE×LEE
Ngelixa i-IQE ilinganisa ukusebenza kakuhle kokuphinda kufumaneke imisebe ngaphakathi kwendawo esebenzayo, i-LEE ichaza iqhezu lee-photon ezivelisiweyo eziphuma ngempumelelo kwisixhobo.
Kwi-GaN-based LEDs ezikhuliswe kwi-sapphire substrates, i-LEE kwiindlela eziqhelekileyo zoyilo idla ngokulinganiselwa kwi-30–40%. Lo mda uvela ikakhulu kwi:
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Ukungafani okukhulu kwe-refractive index phakathi kweGaN (n ≈ 2.4), isafire (n ≈ 1.7), kunye nomoya (n ≈ 1.0)
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Ukubonakalisa okungaphakathi okuqinileyo (TIR) kwiindawo zokujonga ezicwangcisiweyo
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Ukubanjwa kwe-photon ngaphakathi kweengqimba ze-epitaxial kunye ne-substrate
Ngenxa yoko, inxalenye enkulu yeefotoni eziveliswayo idlula kwiimbonakalo ezininzi zangaphakathi kwaye ekugqibeleni ifunxwa zizinto okanye iguqulwe ibe bubushushu endaweni yokuba inegalelo ekukhanyeni okuluncedo.
2. Ii-Flat Sapphire Substrates: Ubulula beSakhiwo kunye neMiqathango yokuBona
2.1 Iimpawu zoBume
Ii-sapphire substrates ezithe tyaba zihlala zisebenzisa i-c-plane (0001) orientation enomphezulu ogudileyo nocwangcisiweyo. Ziye zamkelwe ngokubanzi ngenxa yezi zinto zilandelayo:
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Umgangatho ophezulu wekristale
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Uzinzo oluhle kakhulu lobushushu kunye neekhemikhali
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Iinkqubo zokuvelisa ezivuthiweyo nezingabizi kakhulu
2.2 Indlela Yokusebenza Ngokubona
Ukusuka kwimbono yokukhanya, ii-planar interfaces zikhokelela kwiindlela zokusasazeka kwe-photon ezijolise kakhulu nezinokuqikelelwa. Xa ii-photon ezenziwe kwindawo esebenzayo ye-GaN zifikelela kwi-GaN–air okanye i-GaN–sapphire interface kwii-engile zesiganeko ezidlula i-engile ebalulekileyo, ukubonakaliswa kwangaphakathi okupheleleyo kwenzeka.
Oku kuphumela ekubeni:
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Ukuvalelwa kwe-photon okuqinileyo ngaphakathi kwesixhobo
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Ukufunxwa okwandisiweyo yi-electrodes zesinyithi kunye neemeko zeziphene
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Ukusasazwa okulinganiselweyo kwe-engile kokukhanya okukhutshiweyo
Enyanisweni, ii-substrates ze-sapphire ezisicaba azincedi kangako ekulweni nokuvalelwa kwamehlo.
3. Iisubstrates zeSapphire ezineePattern: Ingcamango kunye noYilo lweSakhiwo
I-substrate yesafire enepatheni (i-PSS) yenziwa ngokungenisa izakhiwo ze-micro- okanye ze-nanoscale ezihlala ixesha elide okanye ezihlala ixesha elide kumphezulu wesafire kusetyenziswa iindlela ze-photolithography kunye ne-etching.
Iijometri eziqhelekileyo zePSS ziquka:
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Izakhiwo zekhonikhi
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Iidome ezijikeleze i-Hemispherical
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Iimpawu zepiramidi
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Imilo ye-cylindrical okanye i-truncated-cone
Ubukhulu beempawu eziqhelekileyo buqala kwi-sub-micrometer ukuya kwi-micrometer ezininzi, ngobude obulawulwa ngononophelo, i-pitch, kunye nomjikelo womsebenzi.
4. Iindlela zokuphucula ukuKhutshwa kokukhanya kwiPSS
4.1 Ukucinywa koBuchule obupheleleyo bokuCamngca kwangaphakathi
I-topography ye-PSS enamacala amathathu iguqula ii-engile zendawo ze-incidence kwiindawo ezibonakalayo. Ii-photon ebezinokuba namava okubonakaliswa kwangaphakathi ngokupheleleyo kumda othe tyaba zithunyelwa kwii-engile ngaphakathi kwe-escape cone, nto leyo eyandisa kakhulu amathuba azo okuphuma kwisixhobo.
4.2 Ukusasazwa kwe-Optical okuphuculweyo kunye nokungacwangciswanga kwendlela
Izakhiwo ze-PSS zizisa iziganeko ezininzi zokurhawuzelelwa kunye nokucamngca, nto leyo ekhokelela koku:
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Ukungacwangciswanga kwemiyalelo yokusasazeka kwe-photon
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Ukwanda kokunxibelelana ne-interfaces zokukhupha ukukhanya
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Ixesha elincitshisiweyo lokuhlala kwi-photon ngaphakathi kwesixhobo
Ngokwezibalo, ezi ziphumo ziphucula amathuba okukhutshwa kwe-photon ngaphambi kokuba kufakwe.
4.3 Uvavanyo lwe-Refractive Index oluSebenzayo
Ukusuka kwimbono yokubonisa i-optical, i-PSS isebenza njengomaleko osebenzayo wokutshintsha i-refractive index. Endaweni yokutshintsha ngokukhawuleza i-refractive index ukusuka kwi-GaN ukuya emoyeni, ummandla onepateni ubonelela ngotshintsho oluqhubekayo lwe-refractive index, ngaloo ndlela kunciphisa ukulahleka kokubonakaliswa kweFresnel.
Le ndlela yokusebenza ifana ngokwengqiqo neengubo ezichasene nokukhanya, nangona ixhomekeke kwi-geometric optics endaweni yokuphazamiseka kwefilimu encinci.
4.4 Ukunciphisa Ngokungathanga Ngqo Ukulahlekelwa Yi-Optical Absorption
Ngokufinyeza ubude bendlela ye-photon kunye nokuthintela ukubonakaliswa kwangaphakathi okuphindaphindiweyo, i-PSS inciphisa amathuba okufunxwa kwe-optical ngoku:
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Izixhobo zokunxibelelana ngesinyithi
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Iimeko zeziphene zekristale
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Ukufunxwa kwe-Free-carrier kwi-GaN
Ezi ziphumo zinegalelo ekusebenzeni kakuhle okuphezulu kunye nokusebenza ngcono kobushushu.
5. Ezinye iingenelo: Ukuphuculwa koMgangatho weCrystal
Ngaphaya kokuphuculwa kwe-optical, i-PSS ikwaphucula umgangatho wezinto ze-epitaxial ngokusebenzisa iindlela ze-lateral epitaxial overgrowth (LEO):
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Ukususwa kweendawo okuvela kwi-interface ye-sapphire-GaN kuyaqondiswa kwakhona okanye kupheliswe
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Uxinano lokusasazeka kwemisonto luncitshiswe kakhulu
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Umgangatho ophuculweyo wekristale uphucula ukuthembeka kwesixhobo kunye nobomi bokusebenza
Le nzuzo imbini yokukhanya kunye nesakhiwo yahlula i-PSS kwiindlela zokulungisa ubuso ezikhanyayo kuphela.
6. Uthelekiso lobungakanani: I-Flat Sapphire vs. PSS
| Ipharamitha | Isiseko seSapphire esiSicaba | Isiseko seSapphire esineepatheni |
|---|---|---|
| I-topology yomphezulu | Isicwangciso | Iipateni ezincinci/ezincinci |
| Ukusasaza okukhanyayo | Okuncinci | Unamandla |
| Ukubonakaliswa kwangaphakathi okupheleleyo | Olawulayo | Icinezelwe ngamandla |
| Ukusebenza kakuhle kokukhupha ukukhanya | Isiseko | +20% ukuya ku +40% (eqhelekileyo) |
| Uxinano lokuphuma kwindawo ethile | Phezulu | Ezantsi |
| Ubunzima benkqubo | Iphantsi | Iphakathi |
| Ixabiso | Ezantsi | Phezulu |
Impumelelo yokusebenza ixhomekeke kwijiyometri yepateni, ubude bomda wokukhupha, uyilo lweetshiphusi, kunye nesicwangciso sokupakisha.
7. Izinto eziqwalaselwayo malunga notshintshiselwano kunye nobunjineli
Nangona ineengenelo, i-PSS izisa imingeni emininzi esebenzayo:
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Amanyathelo ongezelelweyo e-lithography kunye nokugrumba anyusa iindleko zokwenza
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Ukufana kweepateni kunye nobunzulu be-etch kufuna ulawulo oluchanekileyo
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Iipateni eziphuculweyo kakuhle zinokuchaphazela kakubi ukufana kwe-epitaxial
Ke ngoko, ukulungiswa kwe-PSS ngumsebenzi obandakanya iinkalo ezininzi ezibandakanya ukulinganisa okubonakalayo, ubunjineli bokukhula kwe-epitaxial, kunye noyilo lwesixhobo.
8. Imbono yoShishino kunye neMbono yexesha elizayo
Kwimveliso ye-LED yanamhlanje, i-PSS ayisathathwa njengento yokuphucula ekhethwayo. Kwizicelo ze-LED ezinamandla aphakathi naphezulu—kuquka ukukhanyisa ngokubanzi, ukukhanyisa kweemoto, kunye nokukhanyisa i-backlights—ibe yiteknoloji esisiseko.
Iindlela zophando nophuhliso lwexesha elizayo ziquka:
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Uyilo oluphambili lwe-PSS olulungiselelwe usetyenziso lweMini-LED kunye neMicro-LED
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Iindlela ezidityanisiweyo zokudibanisa i-PSS kunye neekristale ze-photonic okanye i-nanoscale surface texturing
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Imizamo eqhubekayo yokunciphisa iindleko kunye neetekhnoloji zokulinganisa ezinokwandiswa
Isiphelo
Ii-substrates ze-sapphire ezineepateni zimele utshintsho olusisiseko ukusuka kwiinkxaso ze-mechanical ezingasebenziyo ukuya kwizixhobo ze-optical ezisebenzayo kunye nezolwakhiwo kwizixhobo ze-LED. Ngokujongana nokulahleka kokukhupha ukukhanya kwiingcambu zazo—oko kukuthi ukuvalelwa kwe-optical kunye nokubonakaliswa kwe-interface—i-PSS ivumela ukusebenza okuphezulu, ukuthembeka okuphuculweyo, kunye nokusebenza kwesixhobo okuzinzileyo.
Ngokwahlukileyo koko, nangona ii-sapphire substrates ezithe tyaba zihlala zintle ngenxa yokwenziwa kwazo kunye nexabiso eliphantsi, imida yazo yokukhanya ithintela ukufaneleka kwazo kwi-LEDs zesizukulwana esilandelayo ezisebenzayo. Njengoko itekhnoloji ye-LED iqhubeka nokutshintsha, i-PSS imi njengomzekelo ocacileyo wendlela ubunjineli bezinto ezinokuthi ziguqulele ngayo ngokuthe ngqo kwinzuzo yokusebenza kwinqanaba lenkqubo.
Ixesha lokuposa: Jan-30-2026
