Iiglasi ze-AR zeSilicon Carbide ze-Optical-Grade Waveguide: Ukulungiswa kweeSubstrate eziQinisekisiweyo kakhulu

Ngokuchasene notshintsho lwe-AI, iiglasi ze-AR zingena kancinci kancinci engqondweni yoluntu. Njengendlela edibanisa ngokungenamthungo ihlabathi elibonakalayo nelokwenyani, iiglasi ze-AR zahlukile kwizixhobo ze-VR ngokuvumela abasebenzisi ukuba babone zombini imifanekiso eqikelelweyo ngedijithali kunye nokukhanya okungqongileyo ngaxeshanye. Ukufezekisa lo msebenzi umbini—ukubonisa imifanekiso ye-microdisplay emehlweni ngelixa kugcinwa ukuhanjiswa kokukhanya kwangaphandle—iiglasi ze-AR ezisekwe kwi-optical-grade silicon carbide (SiC) zisebenzisa uyilo lwe-waveguide (lightguide). Olu yilo lusebenzisa ukubonakaliswa kwangaphakathi okupheleleyo ukuhambisa imifanekiso, efana nokuhanjiswa kwe-optical fiber, njengoko kuboniswe kumzobo weskimu.

Ngokwesiqhelo, i-substrate enye ye-6-intshi ephezulu ecocekileyo ene-semi-insulating ingavelisa ii-2 zeeglasi, ngelixa i-substrate ye-8-intshi ithwala ii-3-4. Ukusetyenziswa kwezinto ze-SiC kunika iingenelo ezintathu ezibalulekileyo:

1. Isalathisi sokuqaqamba esingaqhelekanga (2.7): Ivumela indawo yokujonga imibala epheleleyo engaphezulu kwama-80° (i-FOV) ngomaleko welensi enye, isusa izinto ezisetyenziswa ngombala wesibhakabhaka ezixhaphakileyo kwiindlela ze-AR eziqhelekileyo.
2. I-Integrated tri-color (RGB) waveguide: Ithatha indawo yee-multi-layer waveguide stacks, inciphisa ubungakanani kunye nobunzima besixhobo.
3. Ukuqhuba okuphezulu kobushushu (490 W/m·K): Kunciphisa ukuwohloka kokukhanya okubangelwa kukuqokelelwa kobushushu.

Ezi nzuzo zibangele imfuno enkulu yemarike yeeglasi ze-AR ezisekelwe kwi-SiC. I-SiC ye-optical-grade esetyenziswayo idla ngokuba neekristale ze-semi-insulating (HPSI) ezicocekileyo kakhulu, apho iimfuno zazo zokulungiselela zinegalelo kwiindleko eziphezulu zangoku. Ngenxa yoko, uphuhliso lwe-HPSI SiC substrates lubaluleke kakhulu.

1. Ukwenziwa kwePowder yeSiC eNciphisa ubushushu obuphantsi
Imveliso ekwizinga lemizi-mveliso ikakhulu isebenzisa i-high-temperature self-propagating synthesis (SHS), inkqubo efuna ulawulo olucokisekileyo:

• Izinto ezisetyenzisiweyo: I-99.999% yempuphu yekhabhoni/i-silicon ecocekileyo enobukhulu beesuntswana eziyi-10–100 μm.
• Ubumsulwa obuseCrucible: Izixhobo zeGraphite zihlanjululwa ngobushushu obuphezulu ukuze kuncitshiswe ukusasazeka kokungcola kwesinyithi.
• Ulawulo lomoya: I-argon ye-6N-purity (enezicoci ezikwi-line) ithintela ukufakwa kwe-nitrogen; iigesi ze-HCl/H₂ ezilandelelanayo zinokungeniswa ukuze ziguqule iikhompawundi ze-boron kwaye zinciphise i-nitrogen, nangona uxinano lwe-H₂ lufuna ukulungiswa ukuze kuthintelwe ukubola kwe-graphite.
• Imigangatho yezixhobo: Iifurniture zokwenziwa kufuneka zifikelele kwi-<10⁻⁴ Pa base vacuum, kunye neenkqubo ezingqongqo zokujonga ukuvuza.

2. Imingeni yoKhulo lwekristale
Ukukhula kwe-HPSI SiC kuneemfuno ezifanayo zobumsulwa:

• I-Feedstock: Umgubo we-SiC o-6N+-purity one-B/Al/N <10¹⁶ cm⁻³, i-Fe/Ti/O ngaphantsi kwemida yomlinganiselo, kunye nee-alkali metals ezincinci (Na/K).
• Iinkqubo zegesi: I-6N argon/hydrogen blends zonyusa ukuxhathisa.
• Izixhobo: Iimpompo zemolekyuli ziqinisekisa i-vacuum ephezulu kakhulu (<10⁻⁶ Pa); unyango lwangaphambi kokucwiliswa kunye nokucocwa kwe-nitrogen kubalulekile.

2.1 Uyilo lweSubstrate Processing
Xa kuthelekiswa ne-silicon, imijikelo yokukhula ende ye-SiC kunye noxinzelelo oluvela ngaphakathi (olubangela ukuqhekeka/ukuqhekeka komphetho) kufuna ukucutshungulwa okuphambili:

• Ukusikwa nge-laser: Kunyusa isivuno ukusuka kwii-wafers ezingama-30 (350 μm, i-wire saw) ukuya kwii-wafers ezingaphezulu kwama-50 kwi-boule nganye engama-20-mm, kwaye kunokwenzeka ukuba i-200-μm inciphe. Ixesha lokucubungula lihla ukusuka kwiintsuku ezili-10-15 (i-wire saw) ukuya kwi-<20 min/i-wafer kwiikristale ezingama-8-intshi.

3. Intsebenziswano kwiShishini

Iqela le-Orion le-Meta liye laba nguvulindlela ekusetyenzisweni kwe-SiC waveguide ye-optical-grade, nto leyo ekhuthaze utyalo-mali lwe-R&D. Intsebenziswano ephambili ibandakanya:

• I-TankeBlue kunye ne-MUDI Micro: Uphuhliso oludibeneyo lweelensi ze-AR diffractive waveguide.
• UJingsheng Mech, uLongqi Tech, uXREAL, kunye noKunyou Optoelectronics: Intsebenziswano enobuchule yokudibanisa uthotho lweenkonzo ze-AI/AR.

Iingxelo zemarike ziqikelela ukuba iiyunithi ze-AR ezisekelwe kwi-SiC ezingama-500,000 ngonyaka ngo-2027, zitya ii-substrates ezingama-250,000 ze-6-intshi (okanye i-125,000 ye-8-intshi). Le ndlela igxininisa indima ye-SiC yokuguqula izinto kwi-AR optics yesizukulwana esilandelayo.

I-XKH igxile ekunikezeni ii-substrates ze-SiC ze-4H-semi-insulation (4H-SEMI) ezikumgangatho ophezulu ezineedayamitha ezinokwenziwa ngokwezifiso ukusuka kwi-2-intshi ukuya kwi-8-intshi, ezenzelwe ukuhlangabezana neemfuno ezithile zesicelo kwi-RF, i-power electronics, kunye ne-AR/VR optics. Amandla ethu aquka ukubonelela ngevolumu ethembekileyo, ukwenza ngokwezifiso ngokuchanekileyo (ubukhulu, ukujongwa, ukugqitywa komphezulu), kunye nokucubungula ngokupheleleyo ngaphakathi ukusuka ekukhuleni kwekristale ukuya ekupolisheni. Ngaphaya kwe-4H-SEMI, sikwanikezela ngee-substrates ze-4H-N-type, 4H/6H-P-type, kunye ne-3C-SiC, ezixhasa uyilo olwahlukeneyo lwe-semiconductor kunye ne-optoelectronic.