Isiqulatho
1. I-Bottleneck yoKusasazwa kobushushu kwii-AI Chips kunye noPhuculo lweZixhobo zeSilicon Carbide
2. Iimpawu kunye neeNzuzo zobuGcisa zeSilicon Carbide Substrates
3. Izicwangciso zeSicwangciso kunye noPhuhliso oluHlanganisiweyo yiNVIDIA kunye neTSMC
4. Indlela yokuphunyezwa kunye nemingeni ephambili yobuchwephesha
5.Amathemba eMarike kunye noKwandiswa koMbane
6. Impembelelo kwiCandelo loNikezelo kunye nokusebenza kweeNkampani ezinxulumeneyo
7.Izicelo eziBanzi kunye nobungakanani beMarike iyonke yeSilicon Carbide
8. Izisombululo ezenzelwe wena zeXKH kunye neNkxaso yeMveliso
Ingxaki yokusasazeka kobushushu kwiitships ze-AI zexesha elizayo iyoyiswa zizinto ze-silicon carbide (SiC) substrate.
Ngokweengxelo zeendaba zamanye amazwe, i-NVIDIA iceba ukutshintsha izinto ze-substrate eziphakathi kwinkqubo yokupakisha ephucukileyo yeCoWoS yeeprosesa zayo zesizukulwana esilandelayo nge-silicon carbide. I-TSMC imeme abavelisi abakhulu ukuba baphuhlise ubuchwepheshe bokuvelisa be-SiC intermediate substrates kunye.
Isizathu esiphambili kukuba ukuphuculwa kokusebenza kwee-chips ze-AI zangoku kuye kwahlangabezana nemida yomzimba. Njengoko amandla e-GPU esanda, ukudibanisa ii-chips ezininzi kwi-silicon interposer kuvelisa iimfuno eziphezulu kakhulu zokusasaza ubushushu. Ubushushu obuveliswa ngaphakathi kwee-chips busondela kumda wabo, kwaye ii-silicon interposer zemveli azinakuyisombulula ngempumelelo le ngxaki.
Iiprosesa zeNVIDIA Zitshintsha Izinto Zokusasaza Ubushushu! Imfuneko yeSilicon Carbide Substrate Isetelwe Ukuqhuma! ISilicon carbide yi-semiconductor ebanzi ye-bandgap, kwaye iipropati zayo zomzimba ezikhethekileyo ziyinika iingenelo ezibalulekileyo kwiindawo ezixineneyo ezinamandla aphezulu kunye nobushushu obuphezulu. Kwiphakheji ephucukileyo yeGPU, inika iingenelo ezimbini eziphambili:
1. Amandla okusasaza ubushushu: Ukutshintsha ii-interposers ze-silicon ngee-interposers ze-SiC kunokunciphisa ukumelana nobushushu phantse ngama-70%.
2. Uyilo lwaMandla oluSebenzayo: I-SiC ivumela ukudalwa kweemodyuli zolawulo lwe-voltage ezincinci nezisebenzayo, ezifinyeza kakhulu iindlela zokuhambisa umbane, zinciphisa ilahleko zesekethe, kwaye zibonelela ngeempendulo zamandla ezikhawulezayo nezizinzileyo ngakumbi kwimithwalo yekhompyutha ye-AI.
Olu tshintsho lujolise ekusombululeni imingeni yokusasazwa kobushushu ebangelwa kukwanda kwamandla eGPU rhoqo, ukubonelela ngesisombululo esisebenzayo ngakumbi kwiitships zekhompyutha ezisebenzayo kakhulu.
Ukuqhuba kobushushu kwe-silicon carbide kuphezulu ngokuphindwe kabini ukuya kathathu kune-silicon, nto leyo ephucula ngempumelelo ulawulo lobushushu kwaye isombulula iingxaki zokusasaza ubushushu kwiitships ezinamandla aphezulu. Ukusebenza kwayo okuhle kobushushu kunokunciphisa ubushushu be-junction yeetships ze-GPU ngama-20-30°C, okuphucula kakhulu uzinzo kwiimeko zekhompyutha ephezulu.
Indlela yokuphumeza kunye nemingeni
Ngokwemithombo yobonelelo ngeenkonzo, i-NVIDIA iza kuphumeza olu tshintsho lwezinto ngamanyathelo amabini:
•2025-2026: Isizukulwana sokuqala seRubin GPU siza kusebenzisa ii-silicon interposer. I-TSMC imeme abavelisi abakhulu ukuba baphuhlise itekhnoloji yokuvelisa ii-SiC interposer kunye.
•2027: Ii-interposer ze-SiC ziya kufakwa ngokusesikweni kwinkqubo yokupakisha ephucukileyo.
Nangona kunjalo, esi sicwangciso sijongene nemingeni emininzi, ingakumbi kwiinkqubo zokuvelisa. Ubunzima be-silicon carbide bufana nobedayimani, nto leyo efuna iteknoloji yokusika ephezulu kakhulu. Ukuba iteknoloji yokusika ayanelanga, umphezulu weSiC unokuba ngamaza, nto leyo ebangela ukuba ungasetyenziswa kwiipakethe eziphambili. Abavelisi bezixhobo ezifana neDISCO yaseJapan basebenza ekuphuhliseni izixhobo ezintsha zokusika nge-laser ukujongana nalo mceli mngeni.
Amathemba Exesha Elizayo
Okwangoku, itekhnoloji ye-SiC interposer iza kuqala ukusetyenziswa kwiitships ze-AI eziphambili. I-TSMC iceba ukuqalisa i-CoWoS ye-reticle ye-7x ngo-2027 ukuze idibanise iiprosesa kunye nememori engaphezulu, yonyuse indawo ye-interposer ibe yi-14,400 mm², nto leyo eya kukhuthaza imfuno enkulu yee-substrates.
UMorgan Stanley uqikelela ukuba umthamo wokupakisha wenyanga weCoWoS kwihlabathi liphela uza kunyuka ukusuka kwi-38,000 12-intshi wafers ngo-2024 ukuya kwi-83,000 ngo-2025 kunye ne-112,000 ngo-2026. Olu kukhula luya kunyusa ngokuthe ngqo imfuno yee-interposer zeSiC.
Nangona ii-substrates ze-SiC eziyi-12-intshi zibiza kakhulu okwangoku, amaxabiso kulindeleke ukuba ehle kancinci kancinci aye kumanqanaba afanelekileyo njengoko imveliso yobuninzi ikhula kwaye ubuchwepheshe bukhula, nto leyo edala iimeko zokusetyenziswa okukhulu.
Ii-interposer zeSiC azisombululi nje kuphela iingxaki zokusasazwa kobushushu kodwa zikwaphucula kakhulu uxinano lokudibanisa. Ummandla wee-substrates zeSiC eziyi-12-intshi mkhulu phantse nge-90% kunowee-substrates eziyi-8-intshi, okuvumela i-interposer enye ukuba idibanise iimodyuli zeChiplet ezingaphezulu, ixhasa ngokuthe ngqo iimfuno zokupakisha ze-NVIDIA ze-7x reticle CoWoS.
I-TSMC isebenzisana neenkampani zaseJapan ezifana neDISCO ukuphuhlisa iteknoloji yokwenziwa kwe-SiC interposer. Nje ukuba izixhobo ezintsha zisebenze, ukwenziwa kwe-SiC interposer kuya kuqhubeka kakuhle, kwaye kulindeleke ukuba kuqaliswe ukupakisha okuphambili ngo-2027.
Ngenxa yezi ndaba, amasheya anxulumene neSiC aqhube kakuhle kakhulu nge-5 kaSeptemba, kunye ne-index enyuke nge-5.76%. Iinkampani ezifana neTianyue Advanced, iLuxshare Precision, kunye neTiantong Co. zifikelele kumda wemihla ngemihla, ngelixa iJingsheng Mechanical & Electrical kunye neYintang Intelligent Control zinyuke nge-10%.
Ngokutsho kweDaily Economic News, ukuphucula ukusebenza, iNVIDIA iceba ukutshintsha izinto ze-substrate eziphakathi kwinkqubo yokupakisha ephucukileyo yeCoWoS nge-silicon carbide kwisicwangciso sayo sophuhliso lwe-Rubin processor yesizukulwana esilandelayo.
Ulwazi lukawonke-wonke lubonisa ukuba i-silicon carbide ineempawu ezibonakalayo ezibalaseleyo. Xa kuthelekiswa nezixhobo ze-silicon, izixhobo ze-SiC zibonelela ngeenzuzo ezifana noxinano lwamandla aphezulu, ukulahleka kwamandla aphantsi, kunye nokuzinza okumangalisayo kobushushu obuphezulu. Ngokutsho kweTianfeng Securities, uthotho lweshishini le-SiC oluphezulu lubandakanya ukulungiswa kwe-SiC substrates kunye nee-epitaxial wafers; umbindi uquka uyilo, ukwenziwa, kunye nokupakishwa/ukuvavanywa kwezixhobo zamandla ze-SiC kunye nezixhobo ze-RF.
Apha ngezantsi, izicelo zeSiC zibanzi, zigubungela amashishini angaphezu kweshumi, kuquka izithuthi zamandla ezintsha, ii-photovoltaics, imveliso yemizi-mveliso, ezothutho, izikhululo zonxibelelwano, kunye ne-radar. Phakathi kwezi, iimoto ziya kuba yindawo ephambili yesicelo seSiC. Ngokutsho kwe-Aijian Securities, ngo-2028, icandelo leemoto liya kubalelwa kwi-74% yemarike yezixhobo zeSiC zamandla zehlabathi.
Ngokuphathelele ubungakanani bemarike iyonke, ngokutsho kweYole Intelligence, ubungakanani bemarike ye-SiC substrate eqhubayo neyi-semi-insulating bezizizigidi ezingama-512 kunye nezigidi ezingama-242, ngokwahlukeneyo, ngo-2022. Kuqikelelwa ukuba ngo-2026, ubungakanani bemarike ye-SiC yehlabathi buza kufikelela kwi-2.053 yeebhiliyoni, kunye ne-substrate ye-SiC eqhubayo neyi-semi-insulating ubukhulu bayo bufikelela kwi-1.62 yeebhiliyoni kunye ne-$433 yezigidi, ngokwahlukeneyo. Amanani okukhula konyaka adibeneyo (ii-CAGR) kwi-substrate ze-SiC eziqhubayo neyi-semi-insulating ukusuka ngo-2022 ukuya ku-2026 kulindeleke ukuba abe yi-33.37% kunye ne-15.66%, ngokwahlukeneyo.
I-XKH Igxile kuPhuhliso oluQhelekileyo kunye nokuThengiswa kweMveliso yeSilicon Carbide (SiC) kwihlabathi liphela, inikezela uluhlu olupheleleyo lwee-intshi ezi-2 ukuya kwezi-12. Kwi-substrates ze-silicon carbide eziqhubayo kunye nezingena-insulating. Sixhasa ukwenziwa ngokwezifiso kweeparameter ezinje nge-crystal orientation, resistivity (10⁻³–10¹⁰ Ω·cm), kunye nobukhulu (350–2000μm). Iimveliso zethu zisetyenziswa kakhulu kwiindawo eziphezulu eziquka izithuthi zamandla amatsha, ii-inverters ze-photovoltaic, kunye nee-industrial motors. Sisebenzisa inkqubo yokubonelela eqinileyo kunye neqela lenkxaso yobugcisa, siqinisekisa impendulo ekhawulezileyo kunye nokuhanjiswa ngokuchanekileyo, sinceda abathengi ukuba baphucule ukusebenza kwesixhobo kwaye baphucule iindleko zenkqubo.
Ixesha leposi: Sep-12-2025