IMathiriyeli ekrwada engundoqo yeMveliso yeSemiconductor: Iintlobo zeeSubstrates zeWafer

I-Wafer Substrates njengeZixhobo eziPhambili kwiSemiconductor Devices

I-Wafer substrates ngabathwali bomzimba bezixhobo ze-semiconductor, kunye neempawu zabo eziphathekayo zichaza ngokuthe ngqo ukusebenza kwesixhobo, iindleko, kunye neendawo zokusetyenziswa. Apha ngezantsi ziintlobo eziphambili ze-wafer substrates kunye nezinto eziluncedo kunye nokungalunganga:

1.Isilicon (Si)

• Ukwabelana kwimakethi:Ibalelwa ngaphezulu kwe-95% yemarike ye-semiconductor yehlabathi.

• Izinto eziluncedo:

  • Ixabiso eliphantsi:Izinto ezininzi eziluhlaza (i-silicon dioxide), iinkqubo zokuvelisa ezivuthiweyo, kunye noqoqosho olomeleleyo lwesikali.

  • Ukuhambelana kwenkqubo ephezulu:Itekhnoloji yeCMOS ikhule kakhulu, ixhasa iindawo eziphambili (umz., 3nm).

  • Umgangatho ogqwesileyo wekristale:Ii-wafers ezinobubanzi obukhulu (ubukhulu be-12-intshi, i-18-intshi phantsi kophuhliso) ezinoxinzelelo oluphantsi lwesiphene zinokukhuliswa.

  • Iimpawu ezizinzileyo zoomatshini:Kulula ukusika, ukupolisha, kunye nokuphatha.

• Izinto ezingeloncedo:

  • Ibhendi emxinwa (1.12 eV):Ukuvuza okuphezulu ngoku kumaqondo obushushu aphakamileyo, ukunciphisa ukusebenza kwesixhobo samandla.

  • Umsantsa ongathanga ngqo:Ukukhutshwa kokukhanya okuphantsi kakhulu, okungafanelekanga kwizixhobo ze-optoelectronic ezifana ne-LED kunye ne-lasers.

  • Ukuhamba kwe-electron okulinganiselwe:Ukusebenza okuphantsi kwe-frequency ephezulu xa kuthelekiswa ne-compound semiconductors.
    

2.I-Gallium Arsenide (GaAs)

• Usetyenziso:Izixhobo zeRF eziphezulu (i-5G / 6G), izixhobo ze-optoelectronic (i-lasers, iiseli zelanga).

• Izinto eziluncedo:

  • Ukuhamba kwe-electron ephezulu (5–6× leyo yesilicon):Ifanelekile kwi-high-speed, izicelo eziphezulu ze-frequency ezifana ne-millimeter-wave communication.

  • Ibhendi ethe ngqo (1.42 eV):Ukuguqulwa kwe-photoelectric ephezulu, isiseko se-laser ye-infrared kunye ne-LEDs.

  • Ubushushu obuphezulu kunye nokumelana nemitha:Ifanelekile kwi-aerospace kunye neemeko ezingqongileyo ezinzima.

• Izinto ezingeloncedo:

  • Iindleko eziphezulu:Izinto ezinqongopheleyo, ukukhula kwekristale okunzima (kukulungele ukuchithwa), ubungakanani obunqamlekileyo be-wafer (ubukhulu be-6-intshi).

  • Ubuchwephesha bokukhanda:Ithambekele ekuqhekekeni, okukhokelela kwisivuno esisezantsi sokusetyenzwa.

  • Ubutyhefu:I-Arsenic idinga ukuphathwa ngokungqongqo kunye nokulawulwa kwendalo.

3. I-Silicon Carbide (SiC)

• Usetyenziso:Izixhobo zamandla aphezulu kunye ne-high-voltage (i-EV inverters, izikhululo zokutshaja), i-aerospace.

• Izinto eziluncedo:

  • Ibhendi ebanzi (3.26 eV):Amandla aphezulu okuphuka (10 × ye-silicon), ukunyamezela kobushushu obuphezulu (ukushisa okusebenzayo>200 ° C).

  • I-thermal conductivity ephezulu (≈3× isilicon):Ukutshatyalaliswa kobushushu okugqwesileyo, okwenza uxinano lwamandla enkqubo ephezulu.

  • Ilahleko yokutshintsha okuphantsi:Ukuphucula ukusebenza kokuguqulwa kwamandla.

• Izinto ezingeloncedo:

  • Ulucelomngeni lolungiselelo lwesubstrate:Ukukhula okucothayo kwekristale (> 1 iveki), ukulawulwa kwesiphako esinzima (micropipes, dislocations), ixabiso eliphezulu kakhulu (5-10 × silicon).

  • Isayizi encinci ye-wafer:Ikakhulu i-4-6 intshi; 8-intshi isaphantsi kophuhliso.

  • Kunzima ukuqhubekeka:Kunzima kakhulu (i-Mohs 9.5), ukwenza ukusika kunye nokupholisa ixesha elide.

4. IGallium Nitride (GaN)

• Usetyenziso:Izixhobo zamandla ezixhaphakileyo (ukutshaja ngokukhawuleza, izikhululo zesiseko ze-5G), ii-LED / lasers eziluhlaza.

• Izinto eziluncedo:

  • Ukushukuma kwe-electron ephezulu kakhulu + i-bandap ebanzi (3.4 eV):Idibanisa i-high-frequency (> 100 GHz) kunye nokusebenza okuphezulu kwe-voltage.

  • Ukuxhathisa okuphantsi:Yehlisa ilahleko yamandla esixhobo.

  • I-Heteroepitaxy iyahambelana:Ngokuqhelekileyo ikhule kwi-silicon, isafire, okanye i-SiC substrates, ukunciphisa iindleko.

• Izinto ezingeloncedo:

  • Ukukhula kwekristale enye kunzima:I-Heteroepitaxy yeyona nto iphambili, kodwa ukungafani kwe-lattice kubangela iziphene.

  • Iindleko eziphezulu:Ii-substrates ze-Native GaN zibiza kakhulu (i-2-intshi ye-wafer inokubiza amawaka aliqela e-USD).

  • Imingeni yokuthembeka:Iziganeko ezinje ngokuwa ngoku zifuna ukwenziwa ngcono.

5. I-Indium Phosphide (InP)

• Usetyenziso:Unxibelelwano olukhawulezayo lwe-optical (i-lasers, i-photodetectors), izixhobo ze-terahertz.

• Izinto eziluncedo:

  • Ukushukuma kwe-electron ephezulu kakhulu:Ixhasa> ukusebenza kwe-100 GHz, ukugqwesa ii-GaAs.

  • Ibhendi ethe ngqo enobude obuthelekisekayo:Izinto ezingundoqo ze-1.3-1.55 μm zonxibelelwano lwefiber optical.

• Izinto ezingeloncedo:

  • Ibhibhile kwaye ibiza kakhulu:Ixabiso leSubstrate lidlula i-100× isilicon, isayizi esisicaba esilinganiselweyo (i-intshi ezi-4–6).

6. Isafire (Al₂O₃)

• Usetyenziso:Ukukhanya kwe-LED (i-GaN epitaxial substrate), i-glass ye-electronics cover glass.

• Izinto eziluncedo:

  • Ixabiso eliphantsi:Ixabiso eliphantsi kakhulu kune-SiC/GaN substrates.

  • Uzinzo lwekhemikhali olugqwesileyo:I-Corrosion-resistant, ikhusela kakhulu.

  • Ukungafihli:Ifanelekile kwizakhiwo ze-LED ezithe nkqo.

• Izinto ezingeloncedo:

  • Ilathisi enkulu engafaniyo ne-GaN (>13%):Ibangela ingxinano ephezulu yesiphene, ifuna iileya zesithinteli.

  • Ukuqhuba kakubi kwe-thermal (~1/20 yesilicon):Inciphisa ukusebenza kwee-LED ezinamandla aphezulu.

7. Iisubstrates zeCeramic (AlN, BeO, njl.)

• Usetyenziso:Izisasazo zobushushu kwiimodyuli zamandla aphezulu.

• Izinto eziluncedo:

  • I-Insulating + high conductivity thermal conductivity (AlN: 170–230 W/m·K):Ifanele ukupakishwa koxinzelelo oluphezulu.

• Izinto ezingeloncedo:

  • Ikristale engeyiyo enye:Ayinakuxhasa ngokuthe ngqo ukukhula kwesixhobo, sisetyenziswa kuphela njengezinto ezincinci zokupakisha.

8. IiSubstrates eziKhethekileyo

• I-SOI (I-Silicon kwi-Insulator):

  • Ulwakhiwo:I-silicon / i-SiO₂ / isangweji ye-silicon.

  • Izinto eziluncedo:Ukunciphisa i-parasitic capacitance, i-radiation-hardened, ukunyanzeliswa kokuvuza (isetyenziswe kwi-RF, i-MEMS).

  • Izinto ezingeloncedo:I-30-50% ibiza kakhulu kune-silicon eninzi.

• I-Quartz (SiO₂):Isetyenziswe kwiifotomasks kunye ne-MEMS; ukumelana nobushushu obuphezulu kodwa brittle kakhulu.

• Idayimani:Eyona substrate ye-thermal conductivity (>2000 W/m·K), phantsi kwe-R&D yokulahla ubushushu obugqithisileyo.

Itheyibhile yokuthelekisa isiShwankathelo

Imiba ephambili yokuKhethwa kweSubstrate

• Iimfuno zokusebenza:I-GaAs/InP ye-high-frequency; I-SiC ye-voltage ephezulu, ubushushu obuphezulu; I-GaAs/InP/GaN ye-optoelectronics.

• Imiqobo yeendleko:Umthengi we-elektroniki uthanda i-silicon; amasimi aphezulu angathethelela iiprimiyamu zeSiC/GaN.

• Ukudityaniswa kobunzima:I-Silicon ihlala ingenakuthathelwa indawo ukuhambelana kweCMOS.

• Ulawulo lobushushu:Usetyenziso lwamandla aphezulu lukhetha iSiC okanye iGaN esekwe kwidayimane.

• Ukukhula kwekhonkco lonikezelo:Si > Sapphire > GaAs > SiC > GaN > InP.

Ixesha elizayo Trend

Ukuhlanganiswa okungafaniyo (umzekelo, i-GaN-on-Si, i-GaN-on-SiC) iya kulungelelanisa ukusebenza kunye neendleko, ukuqhuba ukuqhubela phambili kwi-5G, izithuthi zombane, kunye ne-quantum computing.