Indlela iSiC kunye neGaN eziguqula ngayo ukuPakishwa kweMicimbi yeMini

Ishishini le-power semiconductor litshintsha ngendlela eguqukayo ngenxa yokwamkelwa ngokukhawuleza kwezinto ze-wide-bandgap (WBG).iSilicon Carbide(SiC) kunye neGallium Nitride (GaN) ziphambili kolu tshintsho, zivumela izixhobo zamandla zesizukulwana esilandelayo ukuba zisebenze kakuhle kakhulu, zitshintshe ngokukhawuleza, kwaye zisebenze kakuhle kakhulu. Ezi zinto azichazi kuphela iimpawu zombane zee-semiconductors zamandla kodwa zikwadala nemingeni emitsha kunye namathuba kubuchwepheshe bokupakisha. Ukupakisha okusebenzayo kubalulekile ukuze kusetyenziswe ngokupheleleyo amandla ezixhobo zeSiC kunye neGaN, ukuqinisekisa ukuthembeka, ukusebenza, kunye nobude bexesha kwizicelo ezifuna amandla ezifana nezithuthi zombane (ii-EV), iinkqubo zamandla avuselelekayo, kunye nee-elektroniki zamandla zoshishino.

Iingenelo zeSiC kunye neGaN

Izixhobo zamandla ze-silicon (Si) eziqhelekileyo bezilawula imarike kangangeminyaka emininzi. Nangona kunjalo, njengoko imfuno ikhula ngenxa yobuninzi bamandla, ukusebenza kakuhle, kunye nezinto ezibumbeneyo, i-silicon ijongene nemida yangaphakathi:

• Umbane oncitshisiweyo wokuqhekeka, nto leyo eyenza kube nzima ukusebenza ngokukhuselekileyo kwiivoltheji eziphezulu.

• Isantya sokutshintsha esicothayo, nto leyo ekhokelela ekwandeni kwelahleko zokutshintsha kwizicelo ezisetyenziswa rhoqo.

• Ukuqhuba okuphantsi kobushushu, nto leyo ebangela ukuqokelelwa kobushushu kunye neemfuno ezingqongqo zokupholisa.

I-SiC kunye ne-GaN, njengee-semiconductors ze-WBG, zoyisa le mida:

• I-SiCInika i-voltage ephezulu yokuqhekeka, ukuhanjiswa kobushushu okugqwesileyo (okuphindwe kathathu ukuya kane kune-silicon), kunye nokunyamezela ubushushu obuphezulu, okwenza ukuba ilungele ukusetyenziswa kwamandla aphezulu njengee-inverters kunye nee-traction motors.

• I-GaNibonelela ngokutshintsha ngokukhawuleza kakhulu, ukumelana okuncinci, kunye nokuhamba kwee-electron okuphezulu, okuvumela ii-converter zamandla ezincinci nezisebenza kakuhle kakhulu ezisebenza kumaza aphezulu.

Ngokusebenzisa ezi zibonelelo zezinto eziphathekayo, iinjineli zinokuyila iinkqubo zamandla ngendlela esebenza kakuhle, enobukhulu obuncinci, kwaye zithembeke ngakumbi.

Iziphumo zokuPakisha umbane

Nangona i-SiC kunye ne-GaN ziphucula ukusebenza kwesixhobo kwinqanaba le-semiconductor, iteknoloji yokupakisha kufuneka iguquke ukuze ijongane nemingeni yobushushu, yombane, kunye neye-mechanical. Izinto eziphambili ekufuneka ziqwalaselwe ziquka:

1. Ulawulo lobushushu
   Izixhobo zeSiC zinokusebenza kumaqondo obushushu angaphezulu kwama-200°C. Ukuchithwa kobushushu okusebenzayo kubalulekile ukuthintela ukufudumala kobushushu nokuqinisekisa ukuthembeka kwexesha elide. Izixhobo zojongano lobushushu oluphambili (ii-TIM), ii-substrates ze-copper-molybdenum, kunye noyilo olulungelelanisiweyo lokusasazeka kobushushu zibalulekile. Ukuqwalaselwa kobushushu kukwachaphazela indawo yokubeka idayi, uyilo lwemodyuli, kunye nobungakanani bephakheji iyonke.

2. Ukusebenza koMbane kunye neeParasitics
   Isantya esiphezulu sokutshintsha kweGaN senza ii-parasites zephakheji—ezifana ne-inductance kunye ne-capacitance—zibaluleke kakhulu. Kwanezinto ezincinci ze-parasites zinokukhokelela ekuqhumeni kwe-voltage, ukuphazamiseka kwe-electromagnetic (EMI), kunye nokulahleka kokutshintsha. Amaqhinga okupakisha afana ne-flip-chip bonding, ii-short current loops, kunye ne-embedded die configurations ziyasetyenziswa ngakumbi ukunciphisa iziphumo ze-parasitic.

3. Ukuthembeka koomatshini
   I-SiC ngokwemvelo ibuthathaka, kwaye izixhobo zeGaN-on-Si ziyakhawuleza ukuxinezeleka. Ukupakisha kufuneka kujongane nokungalingani kokukhula kobushushu, ukuqhekeka, kunye nokudinwa koomatshini ukugcina ukuthembeka kwesixhobo phantsi kokujikeleza okuphindaphindiweyo kobushushu kunye nombane. Izixhobo zokuncamathisela ezixineneyo, ii-substrates ezihambelanayo, kunye nokuzaliswa okuqinileyo kunceda ukunciphisa le mingcipheko.

4. Ukwenziwa okuncinci kunye nokuhlanganiswa
   Izixhobo ze-WBG zivumela uxinano olukhulu lwamandla, nto leyo eqhuba imfuno yeepakethe ezincinci. Iindlela eziphambili zokupakisha—ezifana ne-chip-on-board (CoB), ukupholisa okumacala mabini, kunye nokuhlanganiswa kwenkqubo-kwiphakheji (SiP)—zivumela abayili ukuba banciphise umkhondo ngelixa begcina ukusebenza kunye nolawulo lobushushu. I-Miniaturization ikwaxhasa ukusebenza kwamaza aphezulu kunye nokuphendula ngokukhawuleza kwiinkqubo ze-elektroniki zamandla.

Izisombululo zokuPakisha eziPhumayo

Kuye kwavela iindlela ezininzi ezintsha zokupakisha ezixhasa ukwamkelwa kweSiC kunye neGaN:

• Iisubstrates zeCopper eDibeneyo ngqo (DBC)kwiSiC: Itekhnoloji ye-DBC iphucula ukusasazeka kobushushu kunye nokuzinza koomatshini phantsi kwemisinga ephezulu.

• Uyilo lweGaN-on-Si olufakiweyo: Ezi zinciphisa i-parasitic inductance kwaye zivumela ukutshintsha ngokukhawuleza kakhulu kwiimodyuli ezincinci.

• Ukufakwa kwe-Thermal Conductivity ephezulu: Iikhompawundi zokubumba eziphucukileyo kunye nezinto ezingaphantsi koxinzelelo oluphantsi zithintela ukuqhekeka kunye nokwahlukana phantsi komjikelo wobushushu.

• Iimodyuli ze-3D kunye ne-Multi-Chip: Ukuhlanganiswa kwabaqhubi, iisensa, kunye nezixhobo zamandla kwiphakheji enye kuphucula ukusebenza kwinqanaba lenkqubo kwaye kunciphisa indawo ebhodini.

Ezi zinto zintsha zibonisa indima ebalulekileyo yokupakisha ekuvuleni amandla apheleleyo ee-semiconductors ze-WBG.

Isiphelo

I-SiC kunye ne-GaN ziguqula ngokusisiseko iteknoloji ye-power semiconductor. Iipropati zazo zombane nezobushushu eziphezulu zivumela izixhobo ezikhawulezayo, ezisebenzayo ngakumbi, kwaye ezikwaziyo ukusebenza kwiindawo ezinzima. Nangona kunjalo, ukuqonda ezi zibonelelo kufuna amaqhinga okupakisha aphucukileyo ngokulinganayo ajongana nolawulo lobushushu, ukusebenza kombane, ukuthembeka koomatshini, kunye nokunciphisa amandla. Iinkampani ezivelisa izinto ezintsha kwiipakethe ze-SiC kunye ne-GaN ziya kukhokela isizukulwana esilandelayo se-elektroniki zamandla, zixhasa iinkqubo ezisebenzisa amandla kakuhle nezisebenza kakuhle kumacandelo eemoto, amashishini, kunye namandla avuselelekayo.

Ngamafutshane, utshintsho kwi-power semiconductor packaging alunakwahlulwa kukukhula kwe-SiC kunye ne-GaN. Njengoko ishishini liqhubeka nokuqhubela phambili ekusebenzeni kakuhle, uxinano oluphezulu, kunye nokuthembeka okuphezulu, ukupakisha kuya kudlala indima ebalulekileyo ekuguquleleni iingenelo zethiyori ze-wide-bandgap semiconductors zibe zizisombululo ezisebenzayo nezisebenzisekayo.