Ukusuka kwiSilicon ukuya kwiSilicon Carbide: Indlela Izinto Ezisebenzisa Ubushushu Obuphezulu Eziyichaza Ngayo I-Chip Packaging

I-silicon ibisoloko isisiseko setekhnoloji ye-semiconductor. Nangona kunjalo, njengoko uxinano lwe-transistor lusanda kwaye iiprosesa zanamhlanje kunye neemodyuli zamandla zivelisa uxinano lwamandla oluphezulu, izixhobo ezisekwe kwi-silicon zijongene nemida ebalulekileyo ekulawuleni ubushushu kunye nokuzinza koomatshini.

I-silicon carbide(SiC), i-semiconductor ebanzi ye-bandgap, inika ukuhanjiswa kobushushu obuphezulu kakhulu kunye nokuqina koomatshini, ngelixa igcina uzinzo phantsi kokusebenza kobushushu obuphezulu. Eli nqaku lihlola indlela utshintsho oluvela kwi-silicon ukuya kwi-SiC oluyitshintsha ngayo ukupakisha iitship, luqhuba iifilosofi ezintsha zoyilo kunye nokuphuculwa kokusebenza kwinqanaba lenkqubo.

1. Ukuqhuba Ubushushu: Ukujongana neBottleneck yoKuchitha Ubushushu

Enye yeengxaki eziphambili ekupakisheni iitships kukususa ubushushu ngokukhawuleza. Iiprosesa ezisebenza kakuhle kunye nezixhobo zamandla zinokuvelisa amakhulu ukuya kumawaka eewatts kwindawo encinci. Ngaphandle kokusasaza ubushushu ngokufanelekileyo, kuvela imiba emininzi:

• Amaqondo obushushu aphezulu e-junction anciphisa ubomi besixhobo

• Ukutsiba kwiimpawu zombane, okubeka emngciphekweni uzinzo lokusebenza

• Ukuqokelelana koxinzelelo loomatshini, okukhokelela ekuqhekekeni okanye ekusileleni kwephakheji

I-Silicon inomoya wokushisa omalunga ne-150 W/m·K, ngelixa i-SiC inokufikelela kwi-370–490 W/m·K, kuxhomekeke kwindlela ebekwe ngayo ikristale kunye nomgangatho wezinto ezibonakalayo. Lo mahluko ubalulekileyo wenza ukuba upakisho olusekwe kwi-SiC lube:

• Qhuba ubushushu ngokukhawuleza nangokulinganayo

• Amaqondo obushushu aphantsi e-peak junction

• Nciphisa ukuthembela kwizisombululo zokupholisa zangaphandle ezinkulu

2. Uzinzo lweMishini: Isitshixo esifihlakeleyo sokuthembeka kwephakheji

Ngaphandle kwezinto ezicingelwa ngobushushu, iipakethe zeetships kufuneka zikwazi ukumelana nobushushu obujikelezayo, uxinzelelo loomatshini, kunye nemithwalo yesakhiwo. I-SiC ineenzuzo ezininzi kune-silicon:

• I-Higher Young's modulus: I-SiC iqine ngokuphindwe kabini ukuya kathathu kune-silicon, imelana nokugoba kunye nokuqhekeka

• I-coefficient ephantsi yokwandiswa kobushushu (i-CTE): Ukuhambelana okungcono nezinto zokupakisha kunciphisa uxinzelelo lobushushu

• Uzinzo oluphezulu lweekhemikhali nobushushu: Igcina ukuthembeka phantsi kweemeko ezifumileyo, ezishushu kakhulu, okanye ezirhabaxa

Ezi mpawu zinegalelo ngokuthe ngqo ekuthembekeni okuphezulu kwexesha elide kunye nemveliso, ngakumbi kwizicelo zokupakisha ezinamandla aphezulu okanye ezinoxinano olukhulu.

3. Utshintsho kwiFilosofi yoYilo lokuPakisha

Ukupakisha okusekwe kwi-silicon yendabuko kuxhomekeke kakhulu kulawulo lobushushu bangaphandle, njenge-heatsinks, ii-cold plates, okanye ukupholisa okusebenzayo, okwakha imodeli "yolawulo lobushushu olungasebenziyo". Ukwamkelwa kwe-SiC kuyitshintsha ngokupheleleyo le ndlela:

• Ulawulo lobushushu oluhlanganisiweyo: Le phakheji ngokwayo iba yindlela yobushushu esebenza kakuhle kakhulu

• Inkxaso yobuninzi bamandla aphezulu: Iitships zingabekwa kufutshane okanye zibekwe ndawonye ngaphandle kokudlula imida yobushushu

• Ukuguquguquka okukhulu kokuhlanganiswa kwenkqubo: Ukuhlanganiswa kwee-chip ezininzi kunye nokwahluka kwezinto kwenzeka ngaphandle kokuphazamisa ukusebenza kobushushu

Ngokwenyani, iSiC ayisiyonto “engcono” nje kuphela—ivumela iinjineli ukuba zicinge ngokutsha ngoyilo lweetshiphusi, unxibelelwano, kunye noyilo lweepakeji.

4. Iziphumo zoHlanganiso olungafaniyo

Iinkqubo ze-semiconductor zanamhlanje ziyanda ukudibanisa izixhobo ze-logic, amandla, i-RF, kwane-photonic ngaphakathi kwiphakheji enye. Icandelo ngalinye lineemfuno ezahlukeneyo zobushushu nezoomatshini. Ii-substrates kunye ne-interposers ezisekelwe kwi-SiC zibonelela ngeqonga elidibanisayo elixhasa olu hlukahlukano:

• Ukuqhuba okuphezulu kobushushu kwenza usasazo lobushushu olufanayo kwizixhobo ezininzi

• Ukuqina koomatshini kuqinisekisa ukuthembeka kwephakheji phantsi kokubekwa kwezinto ezintsonkothileyo kunye nolwakhiwo oluxineneyo

• Ukuhambelana nezixhobo ze-wide-bandgap kwenza i-SiC ifaneleke ngakumbi kwizixhobo zamandla zesizukulwana esilandelayo kunye nezicelo zekhompyutha ezisebenzayo kakhulu

5. Izinto ekufuneka ziqwalaselwe kwiMveliso

Nangona i-SiC ineempawu ezintle zezinto ezibonakalayo, ubulukhuni bayo kunye nokuzinza kweekhemikhali kwazisa imingeni ekhethekileyo yokuvelisa:

• Ukunciphisa i-wafer kunye nokulungiswa komphezulu: Kufuna ukugaywa nokupholishwa ngokuchanekileyo ukuze kuthintelwe ukuqhekeka kunye nokuqhekeka

• Ngokudalwa kunye nokwenziwa kweepateni: Ii-vias ezinemilinganiselo ephezulu zihlala zifuna iindlela zokugrumba ezomileyo ezincediswa yi-laser okanye eziphucukileyo

• Ukwenziwa kwesinyithi kunye nokudibanisa: Ukunamathela okuthembekileyo kunye neendlela zombane ezingaxhathisi kakhulu zifuna iileya zomqobo ezikhethekileyo

• Ukuhlolwa kunye nolawulo lwesivuno: Ukuqina kwezinto eziphezulu kunye nobukhulu obukhulu be-wafer kukhulisa impembelelo yeziphene ezincinci

Ukujongana ngempumelelo nale mingeni kubalulekile ekufezekiseni iingenelo ezipheleleyo zeSiC ekupakisheni okusemgangathweni.

Isiphelo

Utshintsho oluvela kwi-silicon ukuya kwi-silicon carbide lumele okungaphezulu kokuphuculwa kwezinto—luyila kwakhona yonke indlela yokupakisha iitship. Ngokudibanisa iipropati eziphezulu zobushushu nezoomatshini ngqo kwi-substrate okanye kwi-interposer, i-SiC ivumela uxinano lwamandla aphezulu, ukuthembeka okuphuculweyo, kunye nokuguquguquka okukhulu kuyilo lwenqanaba lenkqubo.

Njengoko izixhobo ze-semiconductor ziqhubeka nokunciphisa imida yokusebenza, izixhobo ezisekelwe kwi-SiC azizo nje izinto ezikhethwayo—zizinto eziphambili ezinika amandla ubuchwepheshe bokupakisha besizukulwana esilandelayo.