I-HPSI SiC wafer dia: 3inch ubukhulu: 350um ± 25 µm yePower Electronics

I-HPSI SiC wafer dia:3 intshi ubukhulu:350um± 25 µm yePower Electronics Umfanekiso oPhambili

Inkcazo emfutshane:

I-wafer ye-HPSI (High-Purity Silicon Carbide) ye-SiC enobubanzi obuzii-intshi ezi-3 kunye nobukhulu obuzii-350 µm ± 25 µm yenzelwe ngokukodwa usetyenziso lwe-elektroniki yamandla olufuna ii-substrates ezisebenzayo kakhulu. Le wafer ye-SiC inikezela nge-thermal conductivity ephezulu, i-voltage ephezulu yokuqhekeka, kunye nokusebenza kakuhle kumaqondo obushushu aphezulu okusebenza, okwenza ukuba ibe lukhetho olufanelekileyo kwimfuno ekhulayo yezixhobo ze-elektroniki ezisebenzisa amandla okonga amandla neziqinileyo. Ii-wafer ze-SiC zifanelekile ngokukodwa usetyenziso lwe-high-voltage, high-current, kunye ne-high-frequency, apho ii-substrates ze-silicon zemveli zingaphumeleli ukuhlangabezana neemfuno zokusebenza.
I-wafer yethu ye-HPSI SiC, eyenziwe kusetyenziswa iindlela zamva nje eziphambili kushishino, ifumaneka kwiindidi ezahlukeneyo, nganye yenzelwe ukuhlangabezana neemfuno ezithile zokuvelisa. I-wafer ibonisa ukuthembeka okugqwesileyo kwesakhiwo, iimpawu zombane, kunye nomgangatho womphezulu, iqinisekisa ukuba inokubonelela ngokusebenza okuthembekileyo kwizicelo ezifuna amandla, kubandakanya ii-semiconductors zamandla, izithuthi zombane (ii-EV), iinkqubo zamandla avuselelekayo, kunye nokuguqulwa kwamandla kwimizi-mveliso.

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Isicelo

Ii-wafers ze-HPSI SiC zisetyenziswa kwiindidi ezahlukeneyo zezicelo ze-elektroniki zamandla, kuquka:

Ii-Power Semiconductors:Ii-wafer ze-SiC zihlala zisetyenziswa ekuveliseni ii-power diodes, ii-transistors (ii-MOSFET, ii-IGBT), kunye nee-thyristors. Ezi semiconductors zisetyenziswa kakhulu kwizicelo zokuguqula amandla ezifuna ukusebenza kakuhle nokuthembeka okuphezulu, njengakwii-industrial motor drives, izixhobo zamandla, kunye nee-inverters kwiinkqubo zamandla avuselelekayo.
Iimoto zombane (ii-EV):Kwiinjini zombane zezithuthi zombane, izixhobo zamandla ezisekelwe kwiSiC zibonelela ngesantya sokutshintsha esikhawulezayo, ukusebenza kakuhle kwamandla, kunye nokulahlekelwa kobushushu okuncitshisiweyo. Izixhobo zeSiC zilungele ukusetyenziswa kwiinkqubo zolawulo lwebhetri (i-BMS), iziseko zokutshaja, kunye neetshaja ezikwibhodi (ii-OBC), apho ukunciphisa ubunzima kunye nokwandisa ukusebenza kakuhle kokuguqulwa kwamandla kubalulekile.

Iinkqubo zamandla ahlaziyekayo:Ii-wafer ze-SiC zisetyenziswa kakhulu kwii-solar inverters, ii-wind turbine generators, kunye neenkqubo zokugcina amandla, apho ukusebenza kakuhle kunye nokuqina kubalulekile. Izixhobo ezisekwe kwi-SiC zivumela uxinano lwamandla aphezulu kunye nokusebenza okuphuculweyo kwezi zicelo, nto leyo ephucula ukusebenza kakuhle kokuguqulwa kwamandla ngokubanzi.

Izixhobo zombane zamandla emizi-mveliso:Kwizicelo zoshishino ezisebenza kakhulu, ezifana neemoto eziqhubayo, iirobhothi, kunye nezixhobo zamandla ezinkulu, ukusetyenziswa kwee-SiC wafers kuvumela ukusebenza okuphuculweyo ngokubhekiselele ekusebenzeni kakuhle, ukuthembeka, kunye nolawulo lobushushu. Izixhobo zeSiC zinokuphatha amaza okutshintsha aphezulu kunye namaqondo obushushu aphezulu, nto leyo ezenza zifaneleke kwiindawo ezifuna amandla amaninzi.

Amaziko oNxibelelwano kunye neDatha:I-SiC isetyenziswa kwizixhobo zombane zezixhobo zonxibelelwano kunye namaziko edatha, apho ukuthembeka okuphezulu kunye nokuguqulwa kwamandla okusebenzayo kubalulekile. Izixhobo zombane ezisekelwe kwi-SiC zenza kube lula ukusebenza kakuhle kwiisayizi ezincinci, nto leyo ethetha ukuba ukusetyenziswa kwamandla okuncinci kunye nokusebenza ngcono kokupholisa kwiziseko zophuhliso ezinkulu.

I-voltage ephezulu yokuqhekeka, ukumelana okuncinci, kunye nokuqhuba kakuhle kobushushu kwee-wafers ze-SiC kuzenza zibe zezona zinto zifanelekileyo kwezi zicelo ziphambili, nto leyo evumela uphuhliso lwezixhobo zombane ezisebenzisa amandla esizukulwana esilandelayo.

Iipropati

Ipropati	Ixabiso
Ububanzi beWafer	Ii-intshi ezi-3 (76.2 mm)
Ubukhulu beWafer	350 µm ± 25 µm
Uqeqesho lweWafer	<0001> kwi-axis ± 0.5°
Uxinano lweeMipayipi ezincinci (MPD)	≤ 1 cm⁻²
Ukumelana nombane	≥ 1E7 Ω·cm
I-Dopant	Ayivulwanga
Uqhelaniso oluPhambili oluSicaba	{11-20} ± 5.0°
Ubude obuPhambili obuSicaba	32.5 mm ± 3.0 mm
Ubude obuSicaba beSibini	18.0 mm ± 2.0 mm
Ulwazelelelo lweSibini oluSicaba	Ukujonga phezulu: 90° CW ukusuka kwiflethi yokuqala ± 5.0°
Ukukhutshwa komda	3 mm
I-LTV/TTV/Isaphetha/I-Warp	3 µm / 10 µm / ±30 µm / 40 µm
Uburhabaxa bomphezulu	Ubuso obu-C: Obukhazimlisiweyo, ubuso obu-Si: CMP
Iimfanta (zihlolwa kukukhanya okuphezulu)	Akukho nanye
Iipleyiti zeHex (zihlolwe kukukhanya okuphezulu)	Akukho nanye
Iindawo zePolytype (zihlolwa kukukhanya okuphezulu)	Indawo eqokelelweyo yi-5%
Imikrwelo (ihlolwe kukukhanya okuphezulu)	≤ imikrwelo emi-5, ubude obudibeneyo ≤ 150 mm
Ukuqhekeza Umphetho	Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥ 0.5 mm
Ungcoliseko lomphezulu (luhlolwe kukukhanya okunamandla aphezulu)	Akukho nanye

Iingenelo eziphambili

Ukuqhuba okuphezulu kobushushu:Ii-wafer ze-SiC zaziwa ngokukwazi kwazo ukukhupha ubushushu, nto leyo evumela izixhobo zamandla ukuba zisebenze kakuhle kwaye ziphathe imisinga ephezulu ngaphandle kokutshisa kakhulu. Olu phawu lubalulekile kwi-electronics zamandla apho ulawulo lobushushu luyingxaki enkulu.
I-Voltage ephezulu yokuphazamiseka:I-bandgap ebanzi ye-SiC ivumela izixhobo ukuba zikwazi ukunyamezela amanqanaba aphezulu e-voltage, nto leyo eyenza ukuba zilungele ukusetyenziswa kwe-high-voltage efana neegridi zamandla, izithuthi zombane, kunye noomatshini bemizi-mveliso.
Ukusebenza kakuhle okuphezulu:Ukudibana kwamaza okutshintsha aphezulu kunye nokuxhathisa okuncinci kubangela ukuba izixhobo zibe nokulahlekelwa kwamandla okuncinci, nto leyo ephucula ukusebenza kakuhle kokuguqulwa kwamandla kunye nokunciphisa isidingo seenkqubo zokupholisa ezintsonkothileyo.
Ukuthembeka kwiindawo ezinzima:I-SiC iyakwazi ukusebenza kumaqondo obushushu aphezulu (ukuya kuthi ga kwi-600°C), nto leyo eyenza ukuba ifaneleke ukusetyenziswa kwiindawo ebezinokonakalisa izixhobo zemveli ezisekelwe kwi-silicon.
Ukonga Amandla:Izixhobo zamandla zeSiC ziphucula ukusebenza kakuhle kokuguqulwa kwamandla, nto leyo ibalulekileyo ekunciphiseni ukusetyenziswa kwamandla, ingakumbi kwiinkqubo ezinkulu ezifana neziguquli zamandla zoshishino, izithuthi zombane, kunye neziseko zamandla avuselelekayo.