I-Gallium Nitride kwi-Silicon wafer 4inch 6inch Ulungelelwaniso lwe-Substrate ye-Si, i-Resistivity, kunye neenketho ze-N-type/P-type

I-Gallium Nitride kwi-Silicon wafer 4inch 6inch Ulungelelwaniso lwe-Substrate ye-Si elungiselelweyo, ukuxhathisa, kunye neenketho ze-N-type/P-type Umfanekiso obonisiweyo

Inkcazo emfutshane:

IiWafer zethu zeGallium Nitride kwiSilicon (GaN-on-Si) ezenzelwe wena zenzelwe ukuhlangabezana neemfuno ezikhulayo zezicelo ze-elektroniki ezisebenza rhoqo kakhulu nezinamandla aphezulu. Ezi wafer zifumaneka ngobukhulu be-wafer obuyi-intshi ezi-4 kunye no-6, zibonelela ngeendlela zokwenza ngokwezifiso i-Si substrate orientation, resistivity, kunye ne-doping type (N-type/P-type) ukuze zilungele iimfuno ezithile zesicelo. Itekhnoloji yeGaN-on-Si idibanisa iingenelo ze-gallium nitride (GaN) kunye ne-silicon (Si) substrate engabizi kakhulu, ivumela ulawulo olungcono lobushushu, ukusebenza kakuhle okuphezulu, kunye nesantya sokutshintsha ngokukhawuleza. Ngenxa ye-bandgap yazo ebanzi kunye nokumelana nombane okuphantsi, ezi wafers zilungele ukuguqulwa kwamandla, izicelo zeRF, kunye neenkqubo zokudlulisa idatha ngesantya esiphezulu.

Thumela i-imeyile kuthi

Iimbonakalo

●Isithuba esibanzi sebhendi:I-GaN (3.4 eV) ibonelela ngophuculo olukhulu ekusebenzeni rhoqo, ngamandla aphezulu, kunye nobushushu obuphezulu xa kuthelekiswa ne-silicon yendabuko, nto leyo eyenza ukuba ifaneleke kwizixhobo zamandla kunye nee-RF amplifier.
●Ulwazi lweSi Substrate olunokulungiselelwa ngokwezifiso:Khetha kwiindlela ezahlukeneyo ze-Si substrate ezifana ne-<111>, <100>, kunye nezinye ukuze zihambelane neemfuno ezithile zesixhobo.
● Ukumelana ngokwezifiso:Khetha phakathi kweendlela ezahlukeneyo zokuxhathisa kwi-Si, ukusuka kwi-semi-insulation ukuya kwi-high-resistivity kunye ne-low-resistivity ukuze uphucule ukusebenza kwesixhobo.
●Uhlobo lokudambisa iziyobisi:Ifumaneka kwi-doping yohlobo lwe-N okanye lwe-P ukuze ihambelane neemfuno zezixhobo zamandla, ii-transistors ze-RF, okanye ii-LED.
●Umbane oPhakamileyo oPhezulu:Ii-wafer ze-GaN-on-Si zinombane ophezulu wokuqhekeka (ukuya kuthi ga kwi-1200V), nto leyo evumela ukuba zikwazi ukusingatha usetyenziso olunombane ophezulu.
●Isantya Sokutshintsha Esikhawulezayo:I-GaN ine-electron mobility ephezulu kunye ne-switching losses ephantsi kune-silicon, nto leyo eyenza ii-GaN-on-Si wafers zilungele iisekethe ezikhawulezayo.
●Ukusebenza Okuphuculweyo Kobushushu:Nangona i-silicon iqhuba ubushushu obuphantsi, i-GaN-on-Si isabonelela ngozinzo oluphezulu lobushushu, kunye nokuchithwa kobushushu okungcono kunezixhobo ze-silicon zemveli.

Iinkcukacha zobugcisa

Ipharamitha	Ixabiso
Ubungakanani beWafer	Ii-intshi ezi-4, ii-intshi ezi-6
Ulwahlulo lweSi Substrate	<111>, <100>, ngokwezifiso
Ukuba ne-Resistivity	Ukuxhathisa okuphezulu, Ukugquma okuncinci, Ukuxhathisa okuphantsi
Uhlobo lokusebenzisa iziyobisi	Uhlobo lwe-N, uhlobo lwe-P
Ubukhulu beLeya yeGaN	100 nm – 5000 nm (ingenziwa ngokwezifiso)
Umaleko we-AlGaN Barrier	24% – 28% Al (eqhelekileyo yi-10-20 nm)
Ukwahlulwa kweVolthi	600V – 1200V
Ukuhamba kwe-Electron	2000 cm²/V·s
Ukutshintsha rhoqo	Ukuya kuthi ga kwi-18 GHz
Uburhabaxa bomphezulu weWafer	I-RMS ~0.25 nm (AFM)
Ukumelana nePhepha leGaN	437.9 Ω·cm²
I-Wafer Warp iyonke	< 25 µm (ubuninzi)
Ukuqhuba kweThermal	1.3 – 2.1 W/cm·K

Izicelo

Amandla e-Elektroniki: I-GaN-on-Si ifanelekile kwii-elektroniki zamandla ezifana nee-amplifiers zamandla, ii-converters, kunye nee-inverters ezisetyenziswa kwiinkqubo zamandla avuselelekayo, izithuthi zombane (ii-EV), kunye nezixhobo zoshishino. I-voltage yayo ephezulu yokuqhekeka kunye nokumelana okuncinci kuqinisekisa ukuguqulwa kwamandla okusebenzayo, nokuba kusetyenziswe amandla aphezulu.

Unxibelelwano lwe-RF kunye ne-Microwave: Ii-wafer zeGaN-on-Si zibonelela ngezakhono eziphezulu zokusebenzisa i-frequency, nto leyo ezenza zilungele ii-amplifiers zamandla e-RF, unxibelelwano lwesathelayithi, iinkqubo ze-radar, kunye neetekhnoloji ze-5G. Zinesantya esiphezulu sokutshintsha kunye nokukwazi ukusebenza kwii-frequency eziphezulu (ukuya kuthi ga kwi18 GHz), izixhobo zeGaN zibonelela ngokusebenza okuphezulu kwezi zicelo.

Izixhobo zombane zeemotoI-GaN-on-Si isetyenziswa kwiinkqubo zamandla eemoto, kuqukaiitshaja ezikwibhodi (ii-OBC)kwayeAbaguquli be-DC-DCAmandla ayo okusebenza kumaqondo obushushu aphezulu nokumelana namanqanaba aphezulu ombane enza ukuba ifaneleke kakuhle kwiimoto zombane ezifuna ukuguqulwa kwamandla okuqinileyo.

I-LED kunye ne-Optoelectronics: I-GaN yeyona nto ikhethwayo ii-LED eziluhlaza okwesibhakabhaka nezimhlopheIi-wafer zeGaN-on-Si zisetyenziselwa ukuvelisa iinkqubo zokukhanyisa ze-LED ezisebenzayo kakhulu, zibonelela ngokusebenza kakuhle ekukhanyiseni, kubuchwepheshe bokubonisa, nakunxibelelwano lwe-optical.

Imibuzo neempendulo

Q1: Yintoni inzuzo yeGaN kunesilicon kwizixhobo ze-elektroniki?

A1:I-GaN inei-bandgap ebanzi (3.4 eV)kunesilicon (1.1 eV), evumela ukuba imelane neevoltheji eziphezulu kunye namaqondo obushushu. Le propati ivumela iGaN ukuba ikwazi ukusingatha usetyenziso lwamandla aphezulu ngokufanelekileyo, inciphisa ukulahleka kwamandla kwaye inyuse ukusebenza kwenkqubo. IGaN ikwabonelela ngesantya sokutshintsha esikhawulezayo, esibalulekileyo kwizixhobo ezinamaza aphezulu ezifana nee-RF amplifiers kunye nee-power converters.

Umbuzo 2: Ngaba ndingayilungisa indlela i-Si substrate orientation ngayo kwisicelo sam?

A2:Ewe, siyanikezelaiindlela ze-substrate ze-Si ezinokwenziwa ngokwezifisonjenge<111>, <100>, kunye nezinye iindlela zokujongwa kuxhomekeke kwiimfuno zesixhobo sakho. Indlela yokujongwa kwe-substrate ye-Si idlala indima ebalulekileyo ekusebenzeni kwesixhobo, kubandakanya iimpawu zombane, indlela esebenza ngayo ubushushu, kunye nokuzinza koomatshini.

Umbuzo 3: Zithini iingenelo zokusebenzisa ii-wafers zeGaN-on-Si kwizicelo ezisetyenziswa rhoqo?

A3:Iiwafer zeGaN-on-Si zibonelela ngokugqwesileyoisantya sokutshintsha, okuvumela ukusebenza ngokukhawuleza kumaza aphezulu xa kuthelekiswa ne-silicon. Oku kubenza balungele ukusetyenziswaRFkwayeimayikroweviizicelo, kunye ne-high-frequencyizixhobo zamandlanjengeIiHEMT(iiTransistors ze-Electron Mobility eziPhakamileyo) kunyeIzikhulisi zeRF. Ukunyuka kwe-electron kweGaN kukwakhokelela ekulahlekelweni kokutshintsha okuncinci kunye nokusebenza kakuhle okuphuculweyo.

Umbuzo 4: Ziziphi iindlela zokusebenzisa idosi ezikhoyo kwii-wafers zeGaN-on-Si?

A4:Sinikezela zombiniUhlobo lwe-NkwayeUhlobo lwe-Piindlela zokusebenzisa i-doping, ezisetyenziswa rhoqo kwiintlobo ezahlukeneyo zezixhobo ze-semiconductor.Ukusetyenziswa kweziyobisi kohlobo lwe-Nilungele kakhuluii-transistors zamandlakwayeIzikhulisi zeRF, ngelixaUnyango lwe-P-type dopingisetyenziswa rhoqo kwizixhobo ze-optoelectronic ezifana nee-LED.

Isiphelo

IiWafers zethu zeGallium Nitride ezenziwe ngokwezifiso kwiSilicon (GaN-on-Si) zibonelela ngesisombululo esifanelekileyo kwizicelo ezisebenza rhoqo, ezinamandla aphezulu, kunye nobushushu obuphezulu. Ngokusebenzisa iindlela zeSi substrate ezilungiselelwe wena, ukuthintela, kunye ne-N-type/P-type doping, ezi wafers zenzelwe ukuhlangabezana neemfuno ezithile zamashishini ukusuka kwiinkqubo ze-elektroniki zamandla kunye neenkqubo zeemoto ukuya kunxibelelwano lwe-RF kunye nobuchwepheshe be-LED. Zisebenzisa iipropati eziphezulu zeGaN kunye nokukhula kwesilicon, ezi wafers zibonelela ngokusebenza okuphuculweyo, ukusebenza kakuhle, kunye nokukhusela kwixesha elizayo kwizixhobo zesizukulwana esilandelayo.