Umaleko we-Epitaxial
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I-200mm 8inch GaN kwi-substrate ye-sapphire ye-Epi-layer wafer
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I-Substrate Ephezulu Engalinganiyo Yezixhobo Ze-RF Acoustic (LNOSiC)
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I-GaN kwiGlasi eyi-4-Inch: Iinketho zeGlasi ezinokwenziwa ngokwezifiso kuquka i-JGS1, i-JGS2, i-BF33, kunye ne-Ordinary Quartz
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I-AlN-on-NPSS Wafer: Umaleko we-aluminium nitride osebenza kakuhle kwi-substrate ye-sapphire engacociweyo kwizicelo zobushushu obuphezulu, amandla aphezulu, kunye ne-RF
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IiWafers ze-GaN-on-SiC Epitaxial ezenzelwe wena (100mm, 150mm) – Iinketho ezininzi zeSiC Substrate (4H-N, HPSI, 4H/6H-P)
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IiWafers zeGaN-on-Diamond 4inch 6inch Ubukhulu be-epi iyonke (micron) 0.6 ~ 2.5 okanye ezenzelwe usetyenziso oluQhelekileyo
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I-GaAs enamandla aphezulu epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yonyango lwe-laser
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I-InGaAs epitaxial wafer substrate PD Array photodetector arrays ingasetyenziselwa iLiDAR
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Isixhobo sokukhanyisa i-APD esizi-2 intshi ezingama-3 intshi ezingama-4 intshi se-InP epitaxial wafer substrate sokunxibelelana nge-fiber optic okanye i-LiDAR
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I-wafer ye-SiC Epitaxiy eyi-6intshi N/P yamkelwe ngokwezifiso
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I-wafer ye-SiC Epi ye-4intshi ye-MOS okanye ye-SBD
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I-Silicon-On-Insulator Substrate SOI wafer iileya ezintathu zeMicroelectronics kunye neRadio Frequency