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I-Dia150mm 4H-N 6inch SiC substrate Imveliso kunye nomgangatho ongeyonyani

I-Dia150mm 4H-N 6inch SiC substrate Imveliso kunye nomgangatho ongeyonyani Umfanekiso Ovezweyo
  • I-Dia150mm 4H-N 6inch SiC substrate Imveliso kunye nomgangatho ongeyonyani
  • I-Dia150mm 4H-N 6inch SiC substrate Imveliso kunye nomgangatho ongeyonyani
  • I-Dia150mm 4H-N 6inch SiC substrate Imveliso kunye nomgangatho ongeyonyani

Inkcazo emfutshane:

I-Silicon carbide (i-SiC) yi-binary compound yeqela le-IV-IV, eyona compound eqinileyo ezinzileyo kwiqela le-IV le-periodic table, kwaye yinto ebalulekileyo ye-semiconductor. Ineempawu ezibalaseleyo zobushushu, zoomatshini, zekhemikhali nezombane, ayivelisi nje kuphela izixhobo ze-elektroniki ezishushu kakhulu, eziphindaphindayo, ezinamandla aphezulu, enye yezinto ezisemgangathweni ophezulu, kodwa ingasetyenziswa njengezinto ezisisiseko ezisekelwe kwi-diodes ezikhupha ukukhanya okuluhlaza okwesibhakabhaka ze-GaN. Okwangoku isetyenziselwa i-substrate i-silicon carbide ukuya kwi-4H-based, uhlobo lwe-conductive lwahlulwe lwaba luhlobo lwe-semi-insulating (olungaxutywanga, oluxutywe) kunye nohlobo lwe-N.


Iimbonakalo

Iimpawu eziphambili zee-wafers ze-silicon carbide mosfet eziyi-6 intshi zezi zilandelayo;.

I-voltage ephezulu iyamelana: I-silicon carbide inombane oqhekekileyo kakhulu, ngoko ke ii-wafers ze-silicon carbide ze-mosfet eziyi-6 intshi zinamandla okumelana ne-voltage ephezulu, zifanelekile kwiimeko zokusetyenziswa kwe-voltage ephezulu.

Uxinano olukhulu lwamandla ombane: I-silicon carbide inokuhamba okukhulu kwee-electron, nto leyo eyenza ii-wafers ze-silicon carbide mosfet eziyi-6-intshi zibe noxinano olukhulu lwamandla ombane ukumelana noxinano olukhulu lwamandla ombane.

Isantya esiphezulu sokusebenza: I-silicon carbide ayinaso isantya esiphezulu sokuhamba, nto leyo eyenza ii-wafers ze-silicon carbide mosfet eziyi-6-intshi zibe nesantya esiphezulu sokusebenza, zilungele iimeko zokusetyenziswa kwesantya esiphezulu.

Uzinzo oluhle lobushushu: I-silicon carbide inomoya ophezulu wobushushu, nto leyo eyenza ii-wafers ze-silicon carbide mosfet ze-6-intshi zisenentsebenzo entle kwiindawo ezinobushushu obuphezulu.

Ii-wafer ze-silicon carbide mosfet ezingama-intshi ezi-6 zisetyenziswa kakhulu kwezi ndawo zilandelayo: izixhobo zombane, kubandakanya ii-transformers, ii-rectifiers, ii-inverters, ii-amplifiers zamandla, njl.njl., ezifana nee-solar inverters, ukutshaja kwezithuthi zamandla amatsha, ukuthuthwa koololiwe, i-high-speed air compressor kwi-fuel cell, i-DC-DC converter (DCDC), i-electric vehicle motor drive kunye neendlela zedijithali kwicandelo lamaziko edatha nakwezinye iindawo ezinoluhlu olubanzi lwezicelo.

Singabonelela nge-4H-N 6inch SiC substrate, iintlobo ezahlukeneyo zee-wafers zesitokhwe se-substrate. Singalungiselela nokwenza ngokwezifiso ngokweemfuno zakho. Wamkelekile umbuzo!

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