English

I-wafer egqunywe nge-Au, i-wafer yesafire, i-wafer yesilicon, i-wafer yeSiC, i-2 intshi 4 intshi 6 intshi, ukutyeba okugqunywe ngegolide 10 nm 50 nm 100 nm

I-wafer egqunywe nge-au, i-wafer yesafire, i-wafer yesilicon, i-wafer yeSiC, i-2 intshi 4 intshi 6 intshi, ukutyeba okugqunywe ngegolide 10 nm 50 nm 100 nm Umfanekiso obonisiweyo
  • I-wafer egqunywe nge-Au, i-wafer yesafire, i-wafer yesilicon, i-wafer yeSiC, i-2 intshi 4 intshi 6 intshi, ukutyeba okugqunywe ngegolide 10 nm 50 nm 100 nm
  • I-wafer egqunywe nge-Au, i-wafer yesafire, i-wafer yesilicon, i-wafer yeSiC, i-2 intshi 4 intshi 6 intshi, ukutyeba okugqunywe ngegolide 10 nm 50 nm 100 nm
  • I-wafer egqunywe nge-Au, i-wafer yesafire, i-wafer yesilicon, i-wafer yeSiC, i-2 intshi 4 intshi 6 intshi, ukutyeba okugqunywe ngegolide 10 nm 50 nm 100 nm
  • I-wafer egqunywe nge-Au, i-wafer yesafire, i-wafer yesilicon, i-wafer yeSiC, i-2 intshi 4 intshi 6 intshi, ukutyeba okugqunywe ngegolide 10 nm 50 nm 100 nm

Inkcazo emfutshane:

IiWafers zethu zeGolide eziCocwe zifumaneka kwiintlobo ngeentlobo zezixhobo, kuquka iiSilicon (Si), iiSapphire (Al₂O₃), kunye neeSilicon Carbide (SiC). Ezi wafers ziza ngobukhulu obuziisentimitha ezi-2, iisentimitha ezi-4, kunye neesentimitha ezi-6 kwaye zigqunywe ngomaleko obhityileyo, ococekileyo ophezulu wegolide (Au). Ingubo yegolide ifumaneka ngobukhulu obuqala kwi-10nm ukuya kwi-500nm, kunye nobukhulu obulungiselelwe ukuhlangabezana neemfuno ezithile zabathengi. Umaleko wegolide uncediswa yifilimu yokuncamathelisa eyenziwe ngeChromium (Cr), eqinisekisa ukubopha okuqinileyo phakathi kwesiseko kunye nomaleko wegolide.
Ezi wafers zigqunywe ngegolide zilungele ukusetyenziswa kwezixhobo ezahlukeneyo ze-semiconductor kunye ne-optoelectronics, zibonelela ngombane ophezulu, ukusasazwa kobushushu, ukumelana nokugqwala, kunye nokuqina koomatshini. Zisetyenziswa kakhulu kwizixhobo ezisebenza kakhulu apho uzinzo, ukuthembeka, kunye nokusebenza ixesha elide kubalulekile.


Iimbonakalo

Ezona mpawu

Uphawu

Inkcazo
Izinto ze-Substrate I-Silicon (Si), iSapphire (Al₂O₃), iSilicon Carbide (SiC)
Ubukhulu beGold Coating 10nm, 50nm, 100nm, 500nm
Ubumsulwa beGolide 99.999%ubumsulwa ukuze kusebenze kakuhle
Ifilimu yokuncamathela I-Chromium (Cr), Ubunyulu obuyi-99.98%, ukuqinisekisa ukunamathelana okuqinileyo
Uburhabaxa bomphezulu I-nm ezininzi (umgangatho womphezulu ogudileyo wokusetyenziswa ngokuchanekileyo)
Ukuchasana (iSi Wafer) 1-30 Ohm/cm(kuxhomekeke kuhlobo)
Ubungakanani beWafer Iintshi ezi-2, Ii-intshi ezi-4, Ii-intshi ezi-6, kunye nobukhulu obulungiselelwe wena
Ubukhulu (iSi Wafer) 275µm, 381µm, 525µm
I-TTV (Utshintsho loBukhulu obupheleleyo) ≤20µm
Iflethi Eyintloko (iSi Wafer) 15.9 ± 1.65mmukuya32.5 ± 2.5mm

Kutheni iGold Coating ibalulekile kwiShishini leSemiconductor

Ukuqhuba kombane
Igolide yenye yezona zinto zibalaseleyoukuhanjiswa kombaneIiwafers ezigqunywe ngegolide zibonelela ngeendlela ezinganyangekiyo kakhulu, eziyimfuneko kwizixhobo ze-semiconductor ezifuna uqhagamshelo lombane olukhawulezayo noluzinzileyo.ubunyulu obuphezuluyegolide iqinisekisa ukuqhuba kakuhle kombane, inciphisa ukulahleka kwesiginali.

Ukumelana nokugqwala
Igolide yiayibolisikwaye imelana kakhulu ne-oxidation. Oku kuyenza ilungele ukusetyenziswa kwe-semiconductor esebenza kwiindawo ezinzima okanye eziphantsi kwamaqondo obushushu aphezulu, ukufuma, okanye ezinye iimeko zokubola. I-wafer egqunywe ngegolide iya kugcina iimpawu zayo zombane kunye nokuthembeka ngokuhamba kwexesha, inikaubomi benkonzo endekwizixhobo esetyenziswa kuzo.

Ulawulo lobushushu
Igolideukuqhuba kakuhle kobushushuiqinisekisa ukuba ubushushu obuveliswayo ngexesha lokusebenza kwezixhobo ze-semiconductor buchithwa ngokufanelekileyo. Oku kubaluleke kakhulu kwizicelo ezinamandla aphezulu ezifanaIi-LED, amandla e-elektronikikunyeizixhobo ze-optoelectronic, apho ubushushu obugqithisileyo bunokubangela ukuba isixhobo singasebenzi ukuba asilawulwa kakuhle.

Ukuqina Koomatshini
Iingubo zegolide ziyabonelelaukhuseleko loomatshinikwi-wafer, ukuthintela umonakalo womphezulu ngexesha lokuphathwa nokucutshungulwa. Olu maleko lokhuseleko olongezelelweyo luqinisekisa ukuba ii-wafers zigcina ukuthembeka kwazo kunye nokuthembeka kwazo, nokuba ziphantsi kweemeko ezinzima.

Iimpawu zokuGcoba emva kokuGcoba

Umgangatho ophuculweyo woMphezulu
Ukwaleka kwegolide kuyayiphuculaukuguda komphezuluye-wafer, nto leyo ibalulekileyoukuchaneka okuphezuluusetyenziso.uburhabaxa bomphezuluincitshiswe ukuya kwiinanometers ezininzi, okuqinisekisa ukuba umphezulu ongenasiphako ulungele iinkqubo ezifanaukubopha ucingo, ukutywinakunyeifotolithography.

Iipropati eziphuculweyo zokubopha kunye nokunyibilikisa
Umaleko wegolide uyawomelezaiipropati zokubophaye-wafer, nto leyo eyenza ukuba ilungele ukusetyenziswaukubopha ucingokwayeukubopha i-flip-chipOku kuphumela kuqhagamshelo lombane olukhuselekileyo noluhlala ixesha elideUkupakisha kwe-ICkwayeiindibano ze-semiconductor.

Ayinamhlwa kwaye ihlala ixesha elide
Ingubo yegolide iqinisekisa ukuba i-wafer ayizukubola okanye ingabi na-oxidation, nokuba sele ichithe ixesha elide kwiimeko ezinzima zokusingqongileyo. Oku kuncedauzinzo lwexesha elideyesixhobo sokugqibela se-semiconductor.

Uzinzo lweThermal kunye nombane
Iiwafers ezigqunywe ngegolide zibonelela ngokuguquguqukaukusasazwa kobushushukwayeukuhanjiswa kombane, okukhokelela ekusebenzeni ngcono kunyeukuthembekakwezixhobo ngokuhamba kwexesha, nokuba kubushushu obugqithisileyo.

Iiparameters

Ipropati

Ixabiso
Izinto ze-Substrate I-Silicon (Si), iSapphire (Al₂O₃), iSilicon Carbide (SiC)
Ubukhulu Bomaleko Wegolide 10nm, 50nm, 100nm, 500nm
Ubumsulwa beGolide 99.999%(ubumsulwa obuphezulu ukuze kusebenze kakuhle)
Ifilimu yokuncamathela I-Chromium (Cr),99.98%ubunyulu
Uburhabaxa bomphezulu Iinanometers ezininzi
Ukuchasana (iSi Wafer) 1-30 Ohm/cm
Ubungakanani beWafer Iintshi ezi-2, Ii-intshi ezi-4, Ii-intshi ezi-6, ubungakanani obulungiselelwe wena
Ubukhulu beSi Wafer 275µm, 381µm, 525µm
I-TTV ≤20µm
Iflethi Eyintloko (iSi Wafer) 15.9 ± 1.65mmukuya32.5 ± 2.5mm

Ukusetyenziswa kweeWafers ezigqunywe ngegolide

Ukupakishwa kweSemiconductor
Iiwafers ezigqunywe ngegolide zisetyenziswa kakhuluUkupakisha kwe-ICapho zaboukuhanjiswa kombane, ukuqina koomatshinikunyeukusasazwa kobushushuiipropati ziqinisekisa ukuthembekauqhagamshelokwayeukubophakwizixhobo ze-semiconductor.

Ukuveliswa kwe-LED
Iiwafers ezigqunywe ngegolide zidlala indima ebalulekileyoUkuveliswa kwe-LED, apho baphucula khonaulawulo lobushushukwayeukusebenza kombaneUmaleko wegolide uqinisekisa ukuba ubushushu obuveliswa zii-LED ezinamandla aphezulu buyaphela ngokufanelekileyo, nto leyo enegalelo ekuphileni ixesha elide nokusebenza ngcono.

Izixhobo ze-Optoelectronic
In i-optoelectronics, ii-wafers ezigqunywe ngegolide zisetyenziswa kwizixhobo ezifanaii-photodetectors, iidiode zelaserkunyeizixhobo zokukhanyisaIngubo yegolide inika isiphumo esihle kakhuluukuhanjiswa kobushushukwayeuzinzo lombane, ukuqinisekisa ukusebenza rhoqo kwizixhobo ezifuna ulawulo oluchanekileyo lwemiqondiso yokukhanya kunye nombane.

Amandla e-Elektroniki
Iiwafers ezigqunywe ngegolide zibalulekileizixhobo zombane zamandla, apho ukusebenza kakuhle nokuthembeka kubaluleke kakhulu. Ezi wafers ziqinisekisa ukuqinaukuguqulwa kwamandlakwayeukusasazwa kobushushukwizixhobo ezifanaii-transistors zamandlakwayeabalawuli be-voltage.

IiMicroelectronics kunye neMEMS
In izixhobo ze-microelectronicskwayeI-MEMS (iiNkqubo zeMicro-Electromechanical), ii-wafers ezigqunywe ngegolide zisetyenziselwa ukwenzaizixhobo ze-microelectromechanicalezifuna ukuchaneka okuphezulu kunye nokuqina. Umaleko wegolide ubonelela ngokusebenza kombane okuzinzileyo kunyeukhuseleko loomatshinikwizixhobo ze-microelectronic ezibuthathaka.

Imibuzo Ebuzwa Rhoqo (Imibuzo Neempendulo)

Umbuzo 1: Kutheni usebenzisa igolide xa ugquma ii-wafers?

A1:Igolide isetyenziselwa yonaumbane oqhuba kakuhle, ukumelana nokugqwalakunyeulawulo lobushushuiipropati. Iqinisekisauqhagamshelo oluthembekileyo, ixesha elide lobomi besixhobokunyeukusebenza okuqhubekekayokwizicelo ze-semiconductor.

Umbuzo 2: Zithini iingenelo zokusebenzisa ii-wafers ezigqunywe ngegolide kwizicelo ze-semiconductor?

A2:Iiwafers ezigqunywe ngegolide zibonelelaukuthembeka okuphezulu, uzinzo lwexesha elidekunyeukusebenza ngcono kombane kunye nobushushuZikwaphuculaiipropati zokubophakwaye zikhuseleioksijinikwayeumhlwa.

Umbuzo 3: Ubungakanani bobukhulu bengubo yegolide endifanele ndiyikhethe xa ndiyisebenzisa?

A3:Ubukhulu obufanelekileyo buxhomekeke kwisicelo sakho esithile.10nmifanelekile kwiindlela ezichanekileyo nezinobuthathaka, ngelixa50nmukuya100nmIingubo zokwaleka zisetyenziselwa izixhobo ezinamandla aphezulu.500nmingasetyenziselwa usetyenziso olunzima olufuna amaleya atyebileyoukuqinakwayeukusasazwa kobushushu.

Q4: Ngaba ungenza ngokwezifiso ubungakanani be-wafer?

A4:Ewe, ii-wafers ziyafumaneka kwiIintshi ezi-2, Ii-intshi ezi-4kunyeIi-intshi ezi-6ubungakanani obuqhelekileyo, kwaye singakubonelela ngobukhulu obulungiselelwe wena ukuhlangabezana neemfuno zakho ezithile.

Umbuzo 5: Ingubo yegolide iphucula njani ukusebenza kwesixhobo?

A5:Igolide iyaphucukaukusasazwa kobushushu, ukuhanjiswa kombanekunyeukumelana nokugqwala, zonke ezi negalelo ekusebenzeni kakuhle nangokufanelekileyoizixhobo ze-semiconductor ezinokuthenjwangobomi obude bokusebenza.

Umbuzo 6: Ifilimu yokuncamathela iyiphucula njani i-coating yegolide?

A6:Ii-chromium (Cr)ifilimu yokuncamathela iqinisekisa ulwalamano oluqinileyo phakathiumaleko wegolidekwaye iisiseko sezinto ezingaphantsi komhlaba, ukuthintela ukuqhekeka kunye nokuqinisekisa ukuthembeka kwe-wafer ngexesha lokucubungula nokusetyenziswa.

Isiphelo

IiWafers zethu zeGolide eziQokelelwe yiSilicon, iSapphire, kunye neSiC zibonelela ngezisombululo eziphambili zezicelo ze-semiconductor, zibonelela ngombane ophezulu, ukusasazwa kobushushu, kunye nokumelana nokugqwala. Ezi wafers zilungele ukupakishwa kwe-semiconductor, ukwenziwa kwe-LED, i-optoelectronics, nokunye. Ngegolide ecocekileyo kakhulu, ubukhulu be-coating obunokwenziwa ngokwezifiso, kunye nokuqina okuhle koomatshini, ziqinisekisa ukuthembeka kwexesha elide kunye nokusebenza rhoqo kwiindawo ezifuna amandla.

Umzobo oneenkcukacha

i-silicon wafer egqunywe ngegolide i-silicon waf01 egqunywe ngegolide
i-silicon wafer egqunywe ngegolide i-silicon waf05 egqunywe ngegolide
i-silicon wafer egqunywe ngegolide i-silicon waf07 egqunywe ngegolide
i-silicon wafer egqunywe ngegolide i-silicon waf09 egqunywe ngegolide
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