I-SiC ekhazimlayo ene-intshi ezi-6 kwi-substrate ye-SiC ehlanganisiweyo ene-polycrystalline Ububanzi: 150mm Uhlobo lwe-P Uhlobo lwe-N

I-SiC ekhazimlayo ene-intshi ezi-6 kwi-substrate ye-SiC ehlanganisiweyo ene-polycrystalline Ububanzi be-150mm Uhlobo lwe-P Uhlobo lwe-N Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-monocrystalline SiC eyi-6-intshi eqhubayo kwi-polycrystalline SiC composite substrate imele isisombululo sezinto ze-silicon carbide (SiC) ezintsha ezenzelwe izixhobo ze-elektroniki ezinamandla aphezulu, amaqondo obushushu aphezulu, kunye namaza aqhelekileyo aphezulu. Le substrate inomaleko osebenzayo we-SiC onekristale enye obotshelelwe kwisiseko se-polycrystalline SiC ngeenkqubo ezikhethekileyo, ezidibanisa iipropati zombane eziphezulu ze-monocrystalline SiC kunye neenzuzo zexabiso ze-polycrystalline SiC.
Xa kuthelekiswa ne-substrates ze-SiC ezipheleleyo ze-monocrystalline, i-SiC ye-monocrystalline eqhubayo eyi-intshi ezi-6 kwi-substrate ye-polycrystalline SiC edibeneyo igcina ukuhamba okuphezulu kwe-electron kunye nokumelana ne-voltage ephezulu ngelixa inciphisa kakhulu iindleko zokuvelisa. Ubungakanani bayo be-wafer obuyi-intshi ezi-6 (150 mm) buqinisekisa ukuhambelana nemigca yemveliso ye-semiconductor ekhoyo, nto leyo evumela ukwenziwa okukhuliswayo. Ukongeza, uyilo lwe-conductive luvumela ukusetyenziswa ngokuthe ngqo ekwenziweni kwezixhobo zamandla (umz., ii-MOSFET, ii-diodes), isusa imfuneko yeenkqubo ezongezelelweyo ze-doping kunye nokwenza lula imisebenzi yemveliso.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparameter zobugcisa

Ubungakanani:	6 intshi
Ububanzi:	150 mm
Ubukhulu:	400-500 μm
Iiparamitha zeFilimu ye-Monocrystalline SiC
Uhlobo lwePolytype:	4H-SiC okanye 6H-SiC
Uxinzelelo lwe-Doping:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Ubukhulu:	5-20 μm
Ukumelana nePhepha:	10-1000 Ω/sq
Ukuhamba kwe-Electron:	800-1200 cm²/Vs
Ukuhamba kweMingxunya:	100-300 cm²/Vs
Iiparamitha zeLayer ye-Polycrystalline SiC Buffer
Ubukhulu:	50-300 μm
Ukuqhuba kwe-Thermal:	150-300 W/m·K
Iiparamitha zeMonocrystalline SiC Substrate
Uhlobo lwePolytype:	4H-SiC okanye 6H-SiC
Uxinzelelo lwe-Doping:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Ubukhulu:	300-500 μm
Ubungakanani bengqolowa:	> 1 mm
Uburhabaxa bomphezulu:	< 0.3 mm RMS
Iipropati zoomatshini kunye nezombane
Ubunzima:	Ii-Mohs eziyi-9-10
Amandla oxinzelelo:	3-4 GPa
Tensile strength:	0.3-0.5 GPa
Amandla eNqanaba lokuHlukana:	> 2 MV/cm
Ukunyamezelana kweDosi iyonke:	> 10 Mrad
Ukumelana neMpembelelo yeSiganeko esinye:	> 100 MeV·cm²/mg
Ukuqhuba kwe-Thermal:	150-380 W/m·K
Uluhlu lobushushu bokusebenza:	-55 ukuya kuma-600°C

Iimpawu eziphambili

I-SiC e-monocrystalline eqhubayo eyi-intshi ezi-6 kwi-substrate ye-polycrystalline SiC edibeneyo inika ulungelelwano olukhethekileyo lwesakhiwo kunye nokusebenza kwezinto, okwenza ifaneleke kwiindawo zoshishino ezifuna kakhulu:

1. Ukusebenza kakuhle kweendleko: Isiseko se-polycrystalline SiC sinciphisa kakhulu iindleko xa kuthelekiswa ne-full-monocrystalline SiC, ngelixa umaleko osebenzayo we-monocrystalline SiC uqinisekisa ukusebenza kwesixhobo, okulungele ukusetyenziswa kweendleko eziphantsi.

2.Iimpawu zoMbane eziKhethekileyo: Umaleko we-monocrystalline SiC ubonisa ukuhamba okuphezulu kokuthwala (>500 cm²/V·s) kunye noxinano oluphantsi lwesiphene, uxhasa ukusebenza kwesixhobo esisebenza rhoqo kakhulu kunye namandla aphezulu.

3. Uzinzo lobushushu obuphezulu: Ukumelana nobushushu obuphezulu kweSiC (>600°C) kuqinisekisa ukuba i-substrate edibeneyo ihlala izinzile phantsi kweemeko ezinzima, nto leyo eyenza ukuba ifaneleke kwiimoto zombane kunye neemoto zoshishino.

Ubungakanani beWafer obumiselweyo obuziisentimitha eziyi-4.6: Xa kuthelekiswa ne-substrates zeSiC zemveli eziziisentimitha eziyi-4, ifomathi ye-6-intshi yonyusa isivuno se-chip ngaphezulu kwe-30%, nto leyo enciphisa iindleko zesixhobo ngasinye.

5. Uyilo oluQhubayo: Iileya zohlobo lwe-N okanye uhlobo lwe-P ezifakwe ngaphambili zinciphisa amanyathelo okufakelwa kwee-ion ekwenzeni izixhobo, ziphucula ukusebenza kakuhle kwemveliso kunye nemveliso.

6. Ulawulo oluPhezulu lobushushu: Ulawulo lobushushu lwesiseko se-polycrystalline SiC (~120 W/m·K) lusondela kolwe-monocrystalline SiC, lujongana ngempumelelo nemingeni yokusasazwa kobushushu kwizixhobo ezinamandla aphezulu.

Ezi mpawu zibeka i-SiC ye-monocrystalline eyi-6-intshi eqhubayo kwi-substrate ye-polycrystalline SiC edibeneyo njengesisombululo esikhuphisanayo kumashishini afana namandla avuselelekayo, ukuthuthwa koololiwe, kunye neenqwelo-moya.

Izicelo eziphambili

I-monocrystalline SiC eyi-6-intshi eqhubayo kwi-polycrystalline SiC composite substrate isetyenzisiwe ngempumelelo kwiindawo ezininzi ezifunwa kakhulu:
1. IiPowertrains zeZithuthi zoMbane: Zisetyenziswa kwii-SiC MOSFETs kunye nee-diode ezine-voltage ephezulu ukuphucula ukusebenza kakuhle kwe-inverter kunye nokwandisa uluhlu lwebhetri (umz., iimodeli zeTesla, zeBYD).

2. Iimoto zoShishino: Zivumela iimodyuli zamandla ezitshintsha rhoqo, ezisebenzisa ubushushu obuphezulu, zinciphisa ukusetyenziswa kwamandla koomatshini abanzima nakwii-turbine zomoya.

3. Ii-Inverters ze-Photovoltaic: Izixhobo ze-SiC ziphucula ukusebenza kakuhle kokuguqulwa kwelanga (>99%), ngelixa i-substrate edibeneyo inciphisa ngakumbi iindleko zenkqubo.

4. Uthutho lweSitimela: Isetyenziswa kwii-traction converters kwiinkqubo zesitimela ezihamba ngesantya esiphezulu kunye neenkqubo zesitimela ezingaphantsi komhlaba, ezibonelela ngokumelana ne-voltage ephezulu (>1700V) kunye nezinto eziqinileyo.

5. I-Aerospace: Ilungele iinkqubo zamandla zesathelayithi kunye neesekethe zokulawula iinjini zeenqwelo-moya, ezikwaziyo ukumelana nobushushu obugqithisileyo kunye nemitha.

Kwimveliso esebenzayo, i-monocrystalline SiC eyi-6-intshi eqhubayo kwi-polycrystalline SiC composite substrate ihambelana ngokupheleleyo neenkqubo zesixhobo se-SiC eziqhelekileyo (umz., i-lithography, i-etching), engadingi mali eyongezelelweyo.

Iinkonzo ze-XKH

I-XKH inika inkxaso epheleleyo ye-6-intshi conductive monocrystalline SiC kwi-polycrystalline SiC composite substrate, egubungela i-R&D ukuya kwimveliso enkulu:

1.Ukwenziwa ngokwezifiso: Ubukhulu be-monocrystalline maleko obuhlengahlengiswayo (5–100 μm), uxinzelelo lwe-doping (1e15–1e19 cm⁻³), kunye nokujonga i-crystal (4H/6H-SiC) ukuhlangabezana neemfuno ezahlukeneyo zesixhobo.

2. Ukucubungula iWafer: Ukubonelela ngobuninzi bezinto ezingaphantsi kwe-intshi ezi-6 ezineenkonzo zokunciphisa umva kunye ne-metallization zokudibanisa i-plug-and-play.

3. Ukuqinisekiswa koBugcisa: Kubandakanya uhlalutyo lwe-XRD crystallinity, uvavanyo lwe-Hall effect, kunye nomlinganiselo wokumelana nobushushu ukuze kukhawuleziswe ukufaneleka kwezinto.

4. I-Rapid Prototyping: Iisampulu ezizii-intshi ezi-2 ukuya kwezi-4 (inkqubo efanayo) zamaziko ophando ukuze kukhawuleziswe imijikelo yophuhliso.

5. Uhlalutyo lokungaphumeleli kunye nokuphucula: Izisombululo ezikumgangatho wezinto ezibonakalayo zemingeni yokucubungula (umz., iziphene zomaleko we-epitaxial).

Injongo yethu kukumisela i-monocrystalline SiC eyi-6-intshi eqhubayo kwi-polycrystalline SiC composite substrate njengesisombululo esikhethwayo sokusebenza ngeendleko kwi-SiC power electronics, esinika inkxaso ukusuka ekuqaleni ukuya ekupheleni ukusuka kwi-prototyping ukuya kwimveliso yevolumu.

Isiphelo

I-monocrystalline SiC eyi-6-intshi eqhubayo kwi-polycrystalline SiC composite substrate ifikelela kwi-fixture balance phakathi kokusebenza kunye neendleko ngokusebenzisa isakhiwo sayo esitsha se-mono/polycrystalline hybrid. Njengoko izithuthi zombane zisanda kwaye i-Industry 4.0 iqhubela phambili, le substrate inika isiseko esithembekileyo sezinto ze-elektroniki zamandla zesizukulwana esilandelayo. I-XKH yamkela intsebenziswano ukuze kuhlolwe ngakumbi amandla etekhnoloji ye-SiC.