I-6 intshi 4H SEMI Uhlobo lwe-SiC composite substrate Ubukhulu 500μm TTV≤5μm Ibanga le-MOS

I-intshi ezi-6 ze-4H SEMI Uhlobo lwe-SiC composite substrate Ubukhulu 500μm TTV≤5μm Udidi lwe-MOS Umfanekiso obonisiweyo

Inkcazo emfutshane:

Ngenxa yokuqhubela phambili ngokukhawuleza konxibelelwano lwe-5G kunye netekhnoloji yeradar, i-substrate ye-SiC ehlanganisiweyo eyi-6-intshi ibe yinto ephambili yokwenza izixhobo ezisebenzisa i-frequency ephezulu. Xa kuthelekiswa ne-substrates ze-GaAs zemveli, le substrate igcina i-resistivity ephezulu (>10⁸Ω·cm) ngelixa iphucula ukuhanjiswa kobushushu ngaphezu kwe-5x, ijongana ngempumelelo nemingeni yokusasaza ubushushu kwizixhobo ze-millimeter-wave. Ii-amplifier zamandla ngaphakathi kwezixhobo zemihla ngemihla ezifana nee-smartphones ze-5G kunye nee-terminals zonxibelelwano lwesathelayithi kusenokwenzeka ukuba zakhiwe kule substrate. Sisebenzisa itekhnoloji yethu "yokuhlawula i-buffer layer doping", sinciphise uxinano lwe-micropipe ukuya ngaphantsi kwe-0.5/cm² kwaye sifumene ilahleko ephantsi kakhulu ye-microwave ye-0.05 dB/mm.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparameter zobugcisa

Izinto	Inkcazo	Izinto	Inkcazo
Ububanzi	150±0.2 mm	Uburhabaxa bangaphambili (ubuso beSi-face)	I-Ra≤0.2 nm (5μm×5μm)
Uhlobo lwePolytype	4H	I-Edge Chip, i-Scratch, i-Crack (ukuhlolwa ngokubonakalayo)	Akukho nanye
Ukuxhathisa	≥1E8 Ω·cm	I-TTV	≤5 μm
Ubukhulu bomaleko wokudlulisa	≥0.4 μm	I-Warp	≤35 μm
Ingenanto (2mm>D>0.5mm)	≤5 nganye/Iwafer	Ubukhulu	500±25 μm

Ezona mpawu

1. Ukusebenza Okungaqhelekanga Ngokuphindaphindeka Kakhulu
I-substrate ye-SiC ehlanganisiweyo eyi-6-intshi isebenzisa uyilo lwe-dielectric layer olunemigangatho, oluqinisekisa ukutshintsha kwe-dielectric okungaguqukiyo kwe-<2% kwi-Ka-band (26.5-40 GHz) kunye nokuphucula ukuhambelana kwesigaba nge-40%. Ukwanda kwe-15% ekusebenzeni kakuhle kunye nokusetyenziswa kwamandla okuphantsi kwe-20% kwiimodyuli ze-T/R ezisebenzisa le substrate.

2. Ulawulo oluPhambili loBushushu
Isakhiwo esidibeneyo se "thermal bridge" esikhethekileyo senza ukuba i-lateral thermal conductivity ibe yi-400 W/m·K. Kwiimodyuli ze-PA zesiseko se-28 GHz 5G, ubushushu be-junction bunyuka ngama-28°C kuphela emva kweeyure ezingama-24 zokusebenza okuqhubekayo—i-50°C iphantsi kunezisombululo eziqhelekileyo.

3. Umgangatho weWafer oPhezulu
Ngokusebenzisa indlela ye-Physical Vapor Transport (PVT) ephuculiweyo, sifikelela kwi-dislocation density <500/cm² kunye ne-Total Thickness Variation (TTV) <3 μm.
4. Ukucubungula ngendlela elula kwiMveliso
Inkqubo yethu yokutsalwa kwe-laser eyenzelwe ngokukodwa i-substrate ye-SiC composite eyi-6-intshi ethintela ubushushu inciphisa uxinano lwemeko yomphezulu ngee-oda ezimbini zobukhulu ngaphambi kwe-epitaxy.

Izicelo eziphambili

1. Izixhobo eziphambili zeSitishi seSiseko se-5G
Kwii-antenna arrays ezinkulu ze-MIMO, izixhobo ze-GaN HEMT ezikwi-substrates ze-SiC ezi-semi-insulating eziyi-6-intshi zifumana amandla okukhupha angama-200W kunye nokusebenza kakuhle okungaphezulu kwama-65%. Uvavanyo lwasentsimini kwi-3.5 GHz lubonise ukunyuka kwama-30% kwi-radius yokugubungela.

2. Iinkqubo zoNxibelelwano lweSatellite
Iitransceivers zesathelayithi ze-Low-Earth orbit (LEO) ezisebenzisa le substrate zibonisa i-EIRP ephezulu nge-8 dB kwi-Q-band (40 GHz) ngelixa zinciphisa ubunzima nge-40%. Iiterminal zeSpaceX Starlink ziyisebenzisile ukuvelisa ngobuninzi.

3. Iinkqubo zeRadar zoMkhosi
Iimodyuli ze-T/R zeradar ezikwi-phased-array kule substrate zifikelela kwi-bandwidth ye-6-18 GHz kunye nenani lengxolo eliphantsi njenge-1.2 dB, zandisa umgama wokufumanisa nge-50 km kwiinkqubo zeradar zesilumkiso sangethuba.

4. Iradar yeMoto yeMillimeter-Wave
Iitships ze-radar zeemoto ezingama-79 GHz ezisebenzisa le substrate ziphucula isisombululo se-angular ukuya kwi-0.5°, zihlangabezana neemfuno zokuqhuba ezizimeleyo ze-L4.

Sinikezela ngesisombululo senkonzo esibanzi esenziwe ngokwezifiso kwi-substrates ze-SiC ezihlanganisiweyo ezingama-intshi ayi-6. Ngokuphathelele ukwenza ngokwezifiso iiparameter zezinto, sixhasa ukulawulwa ngokuchanekileyo kokumelana ngaphakathi koluhlu lwe-10⁶-10¹⁰ Ω·cm. Ingakumbi kwizicelo zomkhosi, sinokubonelela ngokhetho lokumelana okuphezulu kakhulu lwe->10⁹ Ω·cm. Inikezela ngeenkcukacha ezintathu zobukhulu be-200μm, 350μm kunye ne-500μm ngaxeshanye, kunye nokunyamezelana okulawulwa ngokungqongqo ngaphakathi kwe-±10μm, ukuhlangabezana neemfuno ezahlukeneyo ukusuka kwizixhobo ezisetyenziswa rhoqo ukuya kwizicelo zamandla aphezulu.

Ngokuphathelele iinkqubo zonyango lomphezulu, sinikezela ngezisombululo ezimbini zobungcali: I-Chemical Mechanical Polishing (CMP) inokufikelela kwinqanaba le-atomic-level flatness nge-Ra<0.15nm, ihlangabezane neemfuno zokukhula kwe-epitaxial ezifuna kakhulu; Itekhnoloji yokulungisa umphezulu elungele i-epitaxial yeemfuno zemveliso ekhawulezayo inokubonelela ngeendawo ezigudileyo kakhulu ezine-Sq<0.3nm kunye nobukhulu be-oxide eseleyo <1nm, okwenza kube lula kakhulu inkqubo yonyango lwangaphambi kokuphela komthengi.

I-XKH ibonelela ngezisombululo ezipheleleyo ezenzelwe wena ze-6-intshi ze-semi-insulating SiC composite substrates

1. Ukwenziwa ngokwezifiso kweParameter yezinto
Sinikezela ngohlengahlengiso oluchanekileyo lokumelana negesi ngaphakathi koluhlu lwe-10⁶-10¹⁰ Ω·cm, kunye neendlela ezikhethekileyo zokumelana negesi eziphezulu kakhulu >10⁹ Ω·cm ezikhoyo kwizicelo zomkhosi/ze-aerospace.

2. Iinkcukacha zoButyebi
Iinketho ezintathu zobukhulu obuqhelekileyo:

· 200μm (ilungiselelwe izixhobo ezisebenzisa i-frequency ephezulu)

· 350μm (inkcazo eqhelekileyo)

· 500μm (yenzelwe ukusetyenziswa kwamandla aphezulu)
· Zonke iinguqulelo zigcina ukunyamezelana kobukhulu obuqinileyo obuyi ±10μm.

3. Iiteknoloji zoNyango oluPhezulu

Ukupholisha oomatshini beKhemikhali (i-CMP): Ifikelela kwinqanaba le-athomu lokutyibilika komphezulu ngeRa<0.15nm, ihlangabezana neemfuno eziqinileyo zokukhula kwe-epitaxial kwi-RF kunye nezixhobo zamandla.

4. Ukucubungula umphezulu oLungele i-Epi

· Inika iindawo ezigudileyo kakhulu ezinoburhabaxa be-Sq<0.3nm

· Ilawula ubukhulu be-oxide yendalo ukuya kwi-<1nm

· Isusa amanyathelo amathathu okulungiselela kwangaphambili kwiindawo zabathengi