Isithando sokukhulisa ikristale se-SiC esingu-4 intshi 6 intshi 8 intshi seNkqubo ye-CVD

Inkcazo emfutshane:

Inkqubo ye-XKH's SiC Crystal Growth Furnace CVD Chemical Vapor Deposition isebenzisa iteknoloji yokufumba umphunga wekhemikhali ehamba phambili kwihlabathi liphela, eyenzelwe ngokukodwa ukukhula kwekristale enye yeSiC ekumgangatho ophezulu. Ngolawulo oluchanekileyo lweeparamitha zenkqubo kubandakanya ukuhamba kwegesi, ubushushu kunye noxinzelelo, ivumela ukukhula kwekristale yeSiC elawulwayo kwi-substrates ze-intshi ezi-4-8. Le nkqubo yeCVD inokuvelisa iintlobo ezahlukeneyo zekristale yeSiC kubandakanya uhlobo lwe-4H/6H-N kunye nohlobo lwe-insulation lwe-4H/6H-SEMI, ibonelela ngezisombululo ezipheleleyo ukusuka kwizixhobo ukuya kwiinkqubo. Le nkqubo ixhasa iimfuno zokukhula kwee-wafers ze-intshi ezi-2-12, okwenza ukuba ifaneleke ngakumbi kwimveliso enkulu yezixhobo ze-elektroniki zamandla kunye nezixhobo ze-RF.

Thumela i-imeyile kuthi

Iimbonakalo

Umgaqo Wokusebenza

Umgaqo ophambili wenkqubo yethu yeCVD ubandakanya ukubola kobushushu beegesi zangaphambili ezine-silicon (umz., iSiH4) kunye ne-carbon-containing (umz., i-C3H8) kubushushu obuphezulu (ngesiqhelo i-1500-2000°C), zibeka iikristale zeSiC ezizimeleyo kwi-substrates ngokusebenzisa ii-chemical reactions ze-gas-phase. Le teknoloji ifanelekile ngokukodwa ekuveliseni i-high-purity (>99.9995%) iikristale ezi-single ze-4H/6H-SiC ezine-density ephantsi (<1000/cm²), zihlangabezana neemfuno ezingqongqo zezinto ze-elektroniki zamandla kunye nezixhobo ze-RF. Ngolawulo oluchanekileyo lokwakheka kwegesi, isantya sokuhamba kunye ne-gradient yobushushu, inkqubo ivumela ulawulo oluchanekileyo lohlobo lwe-crystal conductivity (uhlobo lwe-N/P) kunye ne-resistivity.

Iintlobo zeNkqubo kunye neeParameters zobugcisa

Uhlobo lweNkqubo	Uluhlu lobushushu	Ezona mpawu	Izicelo
I-CVD enobushushu obuphezulu	1500-2300°C	Ukufudumeza kwe-graphite induction, ±5°C ubushushu obufanayo	Ukukhula kwekristale yeSiC eninzi
I-CVD yeFilament eshushu	800-1400°C	Ukufudumeza kwe-tungsten filament, izinga lokufakwa kwe-10-50μm/h	I-SiC epitaxy etyebileyo
I-VPE CVD	1200-1800°C	Ulawulo lobushushu oluneendawo ezininzi, >80% yokusetyenziswa kwegesi	Imveliso enkulu ye-epi-wafer
I-PECVD	400-800°C	I-Plasma iphuculwe, izinga lokufakwa kwe-1-10μm/h	Iifilimu ezincinci zeSiC ezinobushushu obuphantsi

Iimpawu zoBugcisa eziPhambili

1. Inkqubo yoLawulo loBushushu obuPhambili
Isithando somlilo sinenkqubo yokufudumeza enokumelana neendawo ezininzi ekwaziyo ukugcina amaqondo obushushu afikelela kwi-2300°C kunye nokulingana kwe-±1°C kulo lonke igumbi lokukhula. Olu lawulo lobushushu oluchanekileyo lufezekiswa ngoku:
Iindawo ezili-12 zokufudumeza ezilawulwa ngokuzimeleyo.
Ukubeka esweni i-thermocouple engasasebenziyo (Uhlobo C W-Re).
Ii-algorithms zohlengahlengiso lweprofayili yobushushu ngexesha langempela.
Iindonga zegumbi ezipholisiweyo ngamanzi zokulawula i-thermal gradient.

2. Ukuhanjiswa kweGesi kunye neTekhnoloji yokuxuba
Inkqubo yethu yokusasazwa kwegesi ezimeleyo iqinisekisa ukuxuba okuphambili kunye nokuhanjiswa okufanayo:
Izilawuli zokuhamba kobuninzi ezichanekileyo ±0.05scm.
I-multi-point gas injection manifold.
Ukubeka esweni ukwakheka kwegesi kwindawo ethile (i-FTIR spectroscopy).
Ukubuyiselwa kwemali ngokuzenzekelayo ngexesha lokukhula.

3. Ukuphuculwa koMgangatho weCrystal
Le nkqubo ibandakanya izinto ezintsha ezininzi ukuphucula umgangatho wekristale:
Isibambi se-substrate esijikelezayo (esinokucwangciswa ngo-0-100rpm).
Itekhnoloji yokulawula imida ephucukileyo.
Inkqubo yokujonga iziphene ezikwindawo ethile (ukusasazwa nge-laser ye-UV).
Ukulungiswa koxinzelelo ngokuzenzekelayo ngexesha lokukhula.

4. Ukuzenzekelayo kweNkqubo kunye noLawulo
Ukwenziwa kweresiphi ngokuzenzekelayo ngokupheleleyo.
Ukulungiswa kwe-AI yokukhula kweparameter ngexesha langempela.
Ukubeka esweni kunye nokuxilongwa okukude.
Ukufakwa kwedatha yeparameter engaphezu kwe-1000 (kugcinwe iminyaka emi-5).

5. Iimpawu zoKhuseleko kunye nokuthembeka
Ukhuseleko oluphindwe kathathu olugqithisileyo kubushushu obugqithisileyo.
Inkqubo yokucoca izinto ezingxamisekileyo ngokuzenzekelayo.
Uyilo lwesakhiwo olulinganiswa yi-seismic.
Isiqinisekiso sexesha lokusebenza se-98.5%.

6. Uyilo oluKhululekileyo
Uyilo lweModular luvumela ukuphuculwa komthamo.
Iyahambelana nobukhulu be-wafer obuyi-100mm ukuya kwi-200mm.
Ixhasa zombini uqwalaselo oluthe nkqo noluthe tye.
Izixhobo zokutshintsha ngokukhawuleza ukuze zigcinwe zisemgangathweni.

7. Ukonga Amandla
Ukusetyenziswa kwamandla okuphantsi ngama-30% kuneenkqubo ezifanayo.
Inkqubo yokubuyisela ubushushu ibamba ama-60% obushushu obumdaka.
Ii-algorithms zokusetyenziswa kwegesi ezilungiselelweyo.
Iimfuno zezixhobo ezihambelana ne-LEED.

8. Ukuguquguquka kwezinto
Ikhula zonke iintlobo ezinkulu zeSiC (4H, 6H, 3C).
Ixhasa zombini iinguqulelo eziqhubayo kunye nezithintela ubushushu obuphantsi.
Ilungele iinkqubo ezahlukeneyo zokusebenzisa iziyobisi (uhlobo lwe-N, uhlobo lwe-P).
Iyahambelana nezinye izinto ezingaphambili (umz., i-TMS, i-TES).

9. Ukusebenza kweNkqubo yoVutha
Uxinzelelo olusisiseko: <1×10⁻⁶ I-Torr
Izinga lokuvuza: <1×10⁻⁹ I-Torr·L/sec
Isantya sokumpompa: 5000L/s (yeSiH₄)

Ulawulo loxinzelelo oluzenzekelayo ngexesha lokukhula
Olu lwazi lubanzi lobuchwephesha lubonisa amandla enkqubo yethu okuvelisa iikristale zeSiC ezikumgangatho wophando kunye nomgangatho wemveliso kunye nokuhambelana okuphambili kushishino kunye nemveliso. Ukudibanisa ulawulo oluchanekileyo, ukujonga okuphambili, kunye nobunjineli obuqinileyo kwenza le nkqubo yeCVD ibe lolona khetho lufanelekileyo kuzo zombini izicelo ze-R&D kunye ne-volume manufacturing kwi-power electronics, izixhobo ze-RF, kunye nezinye izicelo ze-semiconductor eziphambili.

Iingenelo eziphambili

1. Ukukhula kwekristale okusemgangathweni ophezulu
• Uxinano olupheleleyo lweziphene luphantsi kakhulu kune-<1000/cm² (4H-SiC)
• Ukufana kwe-doping <5% (ii-wafers ze-intshi ezi-6)
• Ubumsulwa bekristale >99.9995%

2. Amandla eMveliso yoBukhulu
• Ixhasa ukukhula kwe-wafer ukuya kuthi ga kwi-8-intshi
• Ububanzi obufanayo >99%
• Ukwahluka kobukhulu <±2%

3. Ulawulo lweNkqubo oluchanekileyo
• Ukuchaneka kokulawula ubushushu ±1°C
• Ukuchaneka kokulawula ukuhamba kwegesi ±0.1scm
• Ukuchaneka kokulawula uxinzelelo ±0.1Torr

4. Ukonga Amandla
• Amandla angcono ngama-30% kuneendlela eziqhelekileyo
• Izinga lokukhula ukuya kuthi ga kwi-50-200μm/h
• Ixesha lokusebenza kwezixhobo >95%

Izicelo eziphambili

1. Izixhobo zombane ezisebenzisa amandla
Ii-substrates ze-4H-SiC eziyi-6-intshi ze-1200V+ MOSFETs/diodes, zinciphisa ilahleko zokutshintsha nge-50%.

2. Unxibelelwano lwe-5G
Ii-substrates ze-SiC ezizi-semi-insulating (resistivity >10⁸Ω·cm) ze-base station PAs, kunye nokulahleka kokufakwa <0.3dB kwi >10GHz.

3. Izithuthi Ezintsha Zamandla
Iimodyuli zamandla zeSiC ezikumgangatho weemoto zandisa umgama we-EV nge-5-8% kwaye zinciphisa ixesha lokutshaja nge-30%.

4. Ii-inverters ze-PV
Ii-substrates ezineziphene eziphantsi zonyusa ukusebenza kakuhle kokuguqula okungaphaya kwe-99% ngelixa zinciphisa ubungakanani benkqubo ngama-40%.

Iinkonzo ze-XKH

1. Iinkonzo zokwenza ngokwezifiso
Iinkqubo ze-CVD ze-intshi ezi-4-8 ezenzelwe wena.
Ixhasa ukukhula kohlobo lwe-4H/6H-N, uhlobo lwe-4H/6H-SEMI insulation, njl.

2. Inkxaso yoBugcisa
Uqeqesho olupheleleyo malunga nokusebenza kunye nokuphucula inkqubo.
Impendulo yobugcisa efumaneka imini nobusuku.

3. Izisombululo zeTurnkey
Iinkonzo eziqala ekuqaleni ukuya ekupheleni ukusuka ekufakweni ukuya ekuqinisekisweni kwenkqubo.

4. Ubonelelo lwezinto
Ii-substrates ze-SiC/ii-epi-wafers ezizi-2-12 intshi ziyafumaneka.
Ixhasa iipolytypes ze-4H/6H/3C.

Izinto ezibalulekileyo ezahlulahlulayo ziquka:
Ukukhula kwekristale ukuya kuthi ga kwi-8-intshi.
Izinga lokukhula ngokukhawuleza ngama-20% kunomndilili weshishini.
Ukuthembeka kwenkqubo yi-98%.
Iphakheji epheleleyo yenkqubo yolawulo ekrelekrele.