IiWafers ze-4H-SiC Epitaxial ze-Ultra-High Voltage MOSFETs (100–500 μm, 6 intshi)

Inkcazo emfutshane:

Ukukhula ngokukhawuleza kwezithuthi zombane, iigridi ezikrelekrele, iinkqubo zamandla avuselelekayo, kunye nezixhobo zoshishino ezinamandla aphezulu kudale isidingo esingxamisekileyo sezixhobo ze-semiconductor ezikwaziyo ukuphatha ii-voltage eziphezulu, uxinano lwamandla aphezulu, kunye nokusebenza kakuhle okukhulu. Phakathi kwee-semiconductors ezibanzi ze-bandgap,i-silicon carbide (i-SiC)ibalasele nge-bandgap yayo ebanzi, ukuhanjiswa kobushushu okuphezulu, kunye namandla aphezulu ombane abalulekileyo.

Thumela i-imeyile kuthi

Iimbonakalo

Umzobo oneenkcukacha

Isishwankathelo seMveliso

ZethuIiwafers ze-epitaxial ze-4H-SiCzenzelwe ngokukodwausetyenziso lweMOSFET ye-voltage ephezulu kakhuluNgeeleya ze-epitaxial eziqala kwi100 μm ukuya kwi-500 μm on Iziseko eziziisentimitha ezi-6 (150 mm), ezi wafers zibonelela ngeendawo ezinde zokuntywila ezifunekayo kwizixhobo zeklasi ye-kV ngelixa zigcina umgangatho wekristale ogqwesileyo kunye nokuguquguquka. Ubukhulu obuqhelekileyo buquka i-100 μm, i-200 μm, kunye ne-300 μm, kunye nokwenza ngokwezifiso okufumanekayo.

Ubukhulu Bomaleko we-Epitaxial

Umaleko we-epitaxial udlala indima ebalulekileyo ekumiseleni ukusebenza kwe-MOSFET, ingakumbi ibhalansi phakathii-voltage yokuqhekekakwayeukungaxhathisi.

100–200 μm: Yenzelwe iiMOSFET zevolthi ephakathi ukuya phezulu, inika ibhalansi egqwesileyo yokusebenza kakuhle kokuqhuba kunye namandla okuvimba.
200–500 μm: Ifanelekile kwizixhobo ze-voltage eziphezulu kakhulu (10 kV+), nto leyo evumela iindawo ezinde zokutyibilika ukuze zikwazi ukuqhekeka ngamandla.

Kuyo yonke intsimi,ukufana kobukhulu kulawulwa ngaphakathi kwe-±2%, ukuqinisekisa ukuhambelana ukusuka kwi-wafer ukuya kwi-wafer kunye nebhetshi ukuya kwibhetshi. Oku kuguquguquka kuvumela abayili ukuba balungise ukusebenza kwesixhobo kwiiklasi zabo ze-voltage ngelixa begcina ukuphinda-phinda kwimveliso yobuninzi.

Inkqubo yoMveliso

Iiwafer zethu zenziwe kusetyenziswai-CVD yanamhlanje (i-Chemical Vapor Deposition) epitaxy, nto leyo evumela ulawulo oluchanekileyo lobukhulu, i-doping, kunye nomgangatho wekristale, nokuba kukho iileya ezixineneyo kakhulu.

I-CVD Epitaxy– Iigesi ezicocekileyo kakhulu kunye neemeko ezilungiselelweyo ziqinisekisa iindawo ezigudileyo kunye noxinano oluphantsi lweziphene.
Ukukhula Komaleko Otyebileyo– Iindlela zokupheka zenkqubo yobunini zivumela ubukhulu be-epitaxial ukuya kuthi ga kwi500 μmngokufana okugqwesileyo.
Ulawulo lwe-Doping– Uxinzelelo oluhlengahlengiswayo phakathi1×10¹⁴ – 1×10¹⁶ cm⁻³, kunye nokufana okungcono kune ±5%.
Ukulungiswa komphezulu– Iiwafers ziyadlulaUkupolisha i-CMPkunye nokuhlolwa okungqongqo, ukuqinisekisa ukuhambelana neenkqubo eziphambili ezifana ne-gate oxidation, i-photolithography, kunye ne-metallization.

Iingenelo eziphambili

Amandla e-Ultra-High Voltage– Iileya ezingqindilili ze-epitaxial (100–500 μm) zixhasa uyilo lwe-MOSFET yodidi lwe-kV.
Umgangatho wekristale obalaseleyo– Ukungashukumi kakuhle kunye noxinano lwe-basal plane defect kuqinisekisa ukuthembeka kunye nokunciphisa ukuvuza.
Ii-substrates ezinkulu ezi-6-intshi– Inkxaso yemveliso ephezulu, iindleko eziphantsi ngesixhobo ngasinye, kunye nokuhambelana okuhle.
Iipropati eziPhezulu zoBushushu– Ukuqhuba okuphezulu kobushushu kunye ne-bandgap ebanzi kwenza kube lula ukusebenza kakuhle kumandla aphezulu kunye nobushushu.
Iiparameters ezinokwenziwa ngokwezifiso– Ubukhulu, ukuxutywa kwedosi, ukujongwa, kunye nokugqitywa komphezulu kunokulungiswa ngokweemfuno ezithile.

Iinkcukacha eziqhelekileyo

Ipharamitha	Inkcazo
Uhlobo lokuqhuba	Uhlobo lwe-N (olufakwe i-nitrogen)
Ukuxhathisa	Nasiphi na
I-Angle engasebenziyo kwi-Axis	4° ± 0.5° (ukuya ku-[11-20])
Uqhelaniso lwekristale	(0001) Si-face
Ubukhulu	200–300 μm (ingenziwa ngokwezifiso 100–500 μm)
Umphezulu wokugqiba	Ngaphambili: I-CMP epholisiweyo (ilungele i-epi) Ngasemva: ijikeleziswe okanye ipholishiwe
I-TTV	≤ 10 μm
Isaphetha/I-Warp	≤ 20 μm

Iindawo zoSetyenziso

Ii-wafers ze-epitaxial ze-4H-SiC zilungele kakhuluIiMOSFET kwiinkqubo zevolthi ephezulu kakhulu, kuquka:

Ii-inverters zombane kunye neemodyuli zokutshaja ezine-voltage ephezulu
Izixhobo zokuhambisa kunye nokusasaza ngegridi ehlakaniphileyo
Ii-inverters zamandla avuselelekayo (ilanga, umoya, indawo yokugcina)
Izixhobo zombane kunye neenkqubo zokutshintsha izinto zoshishino ezinamandla aphezulu

FAQ

Q1: Luluphi uhlobo lwe-conductivity?
I-A1: Uhlobo lwe-N, oluxutywe ne-nitrogen — umgangatho weshishini lee-MOSFET kunye nezinye izixhobo zamandla.

Umbuzo 2: Zeziphi ii-epitaxial thickness ezikhoyo?
A2: 100–500 μm, kunye neenketho eziqhelekileyo kwi-100 μm, 200 μm, kunye ne-300 μm. Ubukhulu obulungiselelweyo buyafumaneka xa buceliwe.

Umbuzo 3: Ithini indlela yokujolisa i-wafer kunye ne-angle ye-off-axis?
A3: (0001) I-Si-face, ene-4° ± 0.5° off-axis ukuya kwicala le-[11-20].

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.