IiWafers zeSiC eziyi-4 intshi eziyi-6H ezizi-Semi-Insulating SiC Substrates zikumgangatho ophezulu, uphando, kunye nomgangatho ongeyonyani

IiWafers zeSiC eziyi-4 intshi eziyi-6H eziziiSubstrates zeSiC eziziiprime, uphando, kunye nodidi olungelulo lwendalo Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-substrate ye-silicon carbide engagqunywanga kakhulu yenziwa ngokusika, ukugaya, ukupolisha, ukucoca kunye nolunye ubuchwepheshe bokucubungula emva kokukhula kwe-silicon carbide crystal engagqunywanga kakhulu. Umaleko we-crystal okanye umaleko we-crystal one-layer eninzi ukhuliswa kwi-substrate ehlangabezana neemfuno zomgangatho njenge-epitaxy, kwaye emva koko isixhobo se-microwave RF senziwe ngokudibanisa uyilo lwesekethe kunye nokupakishwa. Ifumaneka njenge-2inch 3inch 4incgh 6inch 8 intshi yemizi-mveliso, uphando kunye novavanyo lwe-semi-insulated silicon carbide single crystal substrates.

Thumela i-imeyile kuthi

Iimbonakalo

Iinkcukacha zeMveliso

Ibanga			Ibanga leMveliso ye-MPD elingenanto (iBanga le-Z)			Ibanga leMveliso eQhelekileyo (iBanga le-P)		Udidi oluyiDummy (Udidi D)
Ububanzi			99.5 mm~100.0 mm
	4H-SI		500 μm±20 μm			500 μm±25 μm
Uqeqesho lweWafer			I-axis evaliweyo: 4.0° ukuya kwi-< 1120 > ± 0.5° kwi-4H-N, I-axis evuliweyo: <0001>± 0.5° kwi-4H-SI
	4H-SI		≤1cm^-2			≤5 cm^-2		≤15 cm^-2
	4H-SI		≥1E9 Ω·cm					≥1E5 Ω·cm
Uqhelaniso oluPhambili oluSicaba		{10-10} ±5.0°
Ubude obuPhambili obuSicaba		32.5 mm±2.0 mm
Ubude obuSicaba beSibini		18.0 mm±2.0 mm
Ulwazelelelo lweSibini oluSicaba		I-silicon ijonge phezulu: 90° CW. ukusuka kwiPrime flat ±5.0°
Ukukhutshwa komda		3 mm
I-LTV/TTV/Isaphetha/I-Warp		≤3 μm/≤5 μm/≤15 μm/≤30 μm						≤10 μm/≤15 μm/≤25 μm/≤40 μm
Uburhabaxa			Ubuso buka-C				Polish		I-Ra≤1 nm
			Ubuso bukaSi	I-CMP	I-Ra≤0.2 nm					I-Ra≤0.5 nm
Iimfanta zoMphetho ngokukhanya okuphezulu		Akukho nanye						Ubude obuqokelelweyo ≤ 10 mm, bunye ubude ≤2 mm
Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa		Indawo eqokelelweyo ≤0.05%						Indawo eqokelelweyo ≤0.1%
Iindawo zePolytype Ngokukhanya Okuphezulu		Akukho nanye						Indawo eqokelelweyo≤3%
Izinto ezibandakanyiweyo zeCarbon ezibonakalayo		Indawo eqokelelweyo ≤0.05%						Indawo eqokelelweyo ≤3%
Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu		Akukho nanye						Ubude obuqokelelweyo ≤1 * ububanzi bewafer
Iitships zomphetho eziphezulu ngokukhanya okunamandla		Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥0.2 mm						5 zivumelekile, ≤1 mm nganye
Ukungcoliswa komphezulu weSilicon Ngumandla aphezulu		Akukho nanye
Ukupakisha		Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye