I-3 intshi Ubumsulwa obuphezulu obuyi-Semi-Insulation （HPSI）SiC wafer 350um Dummy grade I-Prime grade
Isicelo
Ii-wafers ze-HPSI SiC zibaluleke kakhulu ekuvumeleni izixhobo zamandla zesizukulwana esilandelayo, ezisetyenziswa kwiindlela ezahlukeneyo zokusebenza okuphezulu:
Iinkqubo zoGuqulo lwaMandla: Ii-wafer zeSiC zisebenza njengezixhobo eziphambili zezixhobo zamandla ezifana nee-MOSFET zamandla, ii-diode, kunye nee-IGBT, ezibalulekileyo ekuguqulweni kwamandla ngokufanelekileyo kwiisekethe zombane. Ezi zixhobo zifumaneka kwizibonelelo zamandla ezisebenzayo kakhulu, ii-motor drives, kunye nee-inverters zoshishino.
Iimoto zombane (ii-EV):Imfuno ekhulayo yezithuthi zombane ifuna ukusetyenziswa kwezixhobo zombane ezisebenzayo ngakumbi, kwaye ii-SiC wafers ziphambili kolu tshintsho. Kwii-electron powertrains ze-EV, ezi wafers zibonelela ngokusebenza kakuhle kakhulu kunye nokukwazi ukutshintsha ngokukhawuleza, okufaka isandla ekukhawuleziseni ukutshaja, kumgama omde, kunye nokusebenza ngcono kwesithuthi ngokubanzi.
Umoya ovuselelekayo:Kwiinkqubo zamandla avuselelekayo ezifana namandla elanga nawomoya, ii-SiC wafers zisetyenziswa kwii-inverters kunye nee-converters ezivumela ukubanjwa nokusasazwa kwamandla okusebenzayo ngakumbi. Ukuqhuba okuphezulu kobushushu kunye ne-voltage ephezulu yokuqhekeka kwe-SiC kuqinisekisa ukuba ezi nkqubo zisebenza ngokuthembekileyo, nokuba phantsi kweemeko ezibi kakhulu zokusingqongileyo.
Ukuzenzekelayo kwezeMizi-mveliso kunye neeRobhothi:Ii-elektroniki zamandla ezisebenza kakuhle kwiinkqubo ze-automation zoshishino kunye neerobhothi zifuna izixhobo ezikwaziyo ukutshintsha ngokukhawuleza, ukuphatha imithwalo emikhulu yamandla, kunye nokusebenza phantsi koxinzelelo oluphezulu. Ii-semiconductors ezisekelwe kwi-SiC ziyahlangabezana nezi mfuno ngokubonelela ngokusebenza kakuhle nangokuqinileyo, nokuba zikwimeko enzima yokusebenza.
Iinkqubo zoNxibelelwano:Kwiziseko zonxibelelwano, apho ukuthembeka okuphezulu kunye nokuguqulwa kwamandla okusebenzayo kubaluleke kakhulu, ii-SiC wafers zisetyenziswa kwizibonelelo zombane kunye nee-DC-DC converters. Izixhobo zeSiC zinceda ekunciphiseni ukusetyenziswa kwamandla kwaye ziphucula ukusebenza kwenkqubo kumaziko edatha nakwiinethiwekhi zonxibelelwano.
Ngokubonelela ngesiseko esomeleleyo sezicelo ezinamandla aphezulu, i-HPSI SiC wafer ivumela uphuhliso lwezixhobo ezisebenzisa amandla kakuhle, inceda amashishini ukuba atshintshele kwizisombululo eziluhlaza nezizinzileyo.
Iipropati
| umsebenzi | Ibanga leMveliso | Ibanga loPhando | Ibanga elingeyonyani |
| Ububanzi | 75.0 mm ± 0.5 mm | 75.0 mm ± 0.5 mm | 75.0 mm ± 0.5 mm |
| Ubukhulu | 350 µm ± 25 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Uqeqesho lweWafer | Kwi-axis: <0001> ± 0.5° | Kwi-axis: <0001> ± 2.0° | Kwi-axis: <0001> ± 2.0° |
| Uxinano lweeMicropipe kwi-95% yeeWafers (MPD) | ≤ 1 cm⁻² | ≤ 5 cm⁻² | ≤ 15 cm⁻² |
| Ukumelana nombane | ≥ 1E7 Ω·cm | ≥ 1E6 Ω·cm | ≥ 1E5 Ω·cm |
| I-Dopant | Ayivulwanga | Ayivulwanga | Ayivulwanga |
| Uqhelaniso oluPhambili oluSicaba | {11-20} ± 5.0° | {11-20} ± 5.0° | {11-20} ± 5.0° |
| Ubude obuPhambili obuSicaba | 32.5 mm ± 3.0 mm | 32.5 mm ± 3.0 mm | 32.5 mm ± 3.0 mm |
| Ubude obuSicaba beSibini | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Ulwazelelelo lweSibini oluSicaba | Ukujonga phezulu: 90° CW ukusuka kwiflethi yokuqala ± 5.0° | Ukujonga phezulu: 90° CW ukusuka kwiflethi yokuqala ± 5.0° | Ukujonga phezulu: 90° CW ukusuka kwiflethi yokuqala ± 5.0° |
| Ukukhutshwa komda | 3 mm | 3 mm | 3 mm |
| I-LTV/TTV/Isaphetha/I-Warp | 3 µm / 10 µm / ±30 µm / 40 µm | 3 µm / 10 µm / ±30 µm / 40 µm | 5 µm / 15 µm / ±40 µm / 45 µm |
| Uburhabaxa bomphezulu | Ubuso obu-C: Obukhazimlisiweyo, ubuso obu-Si: CMP | Ubuso obu-C: Obukhazimlisiweyo, ubuso obu-Si: CMP | Ubuso obu-C: Obukhazimlisiweyo, ubuso obu-Si: CMP |
| Iimfanta (zihlolwa kukukhanya okuphezulu) | Akukho nanye | Akukho nanye | Akukho nanye |
| Iipleyiti zeHex (zihlolwe kukukhanya okuphezulu) | Akukho nanye | Akukho nanye | Indawo eqokelelweyo yi-10% |
| Iindawo zePolytype (zihlolwa kukukhanya okuphezulu) | Indawo eqokelelweyo yi-5% | Indawo eqokelelweyo yi-5% | Indawo eqokelelweyo yi-10% |
| Imikrwelo (ihlolwe kukukhanya okuphezulu) | ≤ imikrwelo emi-5, ubude obudibeneyo ≤ 150 mm | ≤ imikrwelo eli-10, ubude obudibeneyo ≤ 200 mm | ≤ imikrwelo eli-10, ubude obudibeneyo ≤ 200 mm |
| Ukuqhekeza Umphetho | Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥ 0.5 mm | 2 zivumelekile, ububanzi nobunzulu obuyi-≤ 1 mm | 5 ivumelekile, ububanzi nobunzulu obuyi-≤ 5 mm |
| Ungcoliseko lomphezulu (luhlolwe kukukhanya okunamandla aphezulu) | Akukho nanye | Akukho nanye | Akukho nanye |
Iingenelo eziphambili
Ukusebenza Okuphezulu Kobushushu: Ukuqhuba okuphezulu kobushushu beSiC kuqinisekisa ukuchithwa kobushushu ngokufanelekileyo kwizixhobo zamandla, okuzivumela ukuba zisebenze kumanqanaba aphezulu ombane kunye namaza ngaphandle kokugqithisa kakhulu. Oku kuthetha ukuba iinkqubo ezincinci nezisebenzayo ngakumbi kunye nobomi obude bokusebenza.
I-High Breakdown Voltage: Nge-bandgap ebanzi xa ithelekiswa ne-silicon, ii-SiC wafers zixhasa usetyenziso lwe-high-voltage, nto leyo ezenza ukuba zilungele izixhobo ze-elektroniki ezisebenza ngombane ezifuna ukumelana ne-high breakdown voltages, njengakwizithuthi zombane, iinkqubo zamandla egridi, kunye neenkqubo zamandla avuselelekayo.
Ukulahlekelwa Ngumbane Okunciphileyo: Ukuxhathisa okuphantsi kunye nesantya sokutshintsha ngokukhawuleza kwezixhobo zeSiC kubangela ukulahleka kwamandla okunciphileyo ngexesha lokusebenza. Oku akuphuculi nje kuphela ukusebenza kakuhle kodwa kuphucula ukonga amandla ngokubanzi kwiinkqubo apho zisetyenziswa khona.
Ukuthembeka Okuphuculweyo Kwiimeko Ezinzima: Iimpawu zeSiC eziqinileyo ziyivumela ukuba isebenze kwiimeko ezimandundu, ezifana namaqondo obushushu aphezulu (ukuya kuthi ga kwi-600°C), ii-voltage eziphezulu, kunye nee-frequency eziphezulu. Oku kwenza ii-wafer zeSiC zilungele ukusetyenziswa kwemizi-mveliso, iimoto, kunye namandla afunekayo.
Ukusebenza kakuhle kwamandla: Izixhobo zeSiC zibonelela ngoxinano olukhulu lwamandla kunezixhobo zemveli ezisekelwe kwisilicon, nto leyo enciphisa ubungakanani kunye nobunzima beenkqubo ze-elektroniki zamandla ngelixa ziphucula ukusebenza kwazo ngokubanzi. Oku kukhokelela ekongeni iindleko kunye nokunciphisa umngcipheko wokusingqongileyo kwizicelo ezifana namandla ahlaziyekayo kunye nezithuthi zombane.
Ubungakanani bokukwazi ukukhulisa: Ububanzi obuziisentimitha ezi-3 kunye nokunyamezela okuchanekileyo kokuvelisa kwe-HPSI SiC wafer kuqinisekisa ukuba iyakwazi ukukhulisa imveliso ngobuninzi, ihlangabezana neemfuno zophando kunye noshishino lokuvelisa.
Isiphelo
I-HPSI SiC wafer, enobubanzi bayo obuziisentimitha ezi-3 kunye nobukhulu obuzii-350 µm ± 25 µm, yeyona nto ifanelekileyo kwisizukulwana esilandelayo sezixhobo ze-elektroniki ezisebenza ngamandla aphezulu. Indibaniselwano yayo eyahlukileyo yokuqhuba ubushushu, i-voltage ephezulu yokuqhekeka, ukulahleka kwamandla aphantsi, kunye nokuthembeka phantsi kweemeko ezinzima kuyenza ibe yinxalenye ebalulekileyo kwizicelo ezahlukeneyo ekuguqulweni kwamandla, amandla ahlaziyekayo, izithuthi zombane, iinkqubo zoshishino, kunye nonxibelelwano.
Le wafer yeSiC ifanelekile ngokukodwa kumashishini afuna ukufikelela ekusebenzeni kakuhle, ukonga amandla okukhulu, kunye nokuthembeka kwenkqubo okuphuculweyo. Njengoko itekhnoloji ye-elektroniki yamandla iqhubeka nokukhula, i-HPSI SiC wafer ibonelela ngesiseko sophuhliso lwezisombululo zesizukulwana esilandelayo, ezisebenzisa amandla kakuhle, eziqhuba utshintsho oluya kwikamva elizinzileyo nelingenakhabhoni.
Umzobo oneenkcukacha
