I-12 intshi ye-SiC Substrate N Uhlobo Olukhulu Ubungakanani Obuphezulu Usetyenziso lweRF

Uhlobo lweSiC Substrate N oluyi-12 intshi Ubungakanani obukhulu Usetyenziso lweRF oluSebenzayo oluPhezulu Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-substrate ye-SiC eyi-intshi ezili-12 imele inkqubela phambili ephambili kubuchwepheshe bezinto ze-semiconductor, enika iingenelo zokuguqula izixhobo ze-elektroniki zamandla kunye nokusetyenziswa kwe-frequency ephezulu. Njengefomathi ye-silicon carbide wafer enkulu ethengiswayo kushishino, i-substrate ye-SiC eyi-intshi ezili-12 ivumela uqoqosho olungakaze lubonwe ngaphambili lobungakanani ngelixa igcina iingenelo zezinto ezibonakalayo zeempawu ze-bandgap ebanzi kunye neempawu zobushushu ezibalaseleyo. Xa kuthelekiswa nee-SiC wafers eziqhelekileyo eziyi-intshi ezi-6 okanye ezincinci, iqonga le-12-intshi linikezela indawo engaphezulu kwe-300% enokusebenziseka nge-wafer nganye, inyusa kakhulu isivuno se-die kwaye inciphisa iindleko zokuvelisa izixhobo zamandla. Olu tshintsho lobungakanani lubonisa ukuvela kwembali kwee-silicon wafers, apho ukunyuka kobubanzi ngakunye kuzise ukunciphisa okukhulu kweendleko kunye nokuphuculwa kokusebenza. Ukuqhuba okuphezulu kobushushu be-SiC substrate eyi-intshi ezili-12 (phantse i-3× ye-silicon) kunye namandla entsimi yokuqhekeka okubalulekileyo kwenza ukuba ibe luncedo ngokukodwa kwiinkqubo zezithuthi zombane zesizukulwana esilandelayo ze-800V, apho ivumela iimodyuli zamandla ezincinci nezisebenzayo. Kwiziseko zophuhliso ze-5G, isantya esiphezulu se-electron saturation sezinto sivumela izixhobo ze-RF ukuba zisebenze kwi-frequency ephezulu kunye nelahleko ephantsi. Ukuhambelana kwe-substrate nezixhobo zokuvelisa i-silicon eziguquliweyo kukwanceda ukwamkelwa ngokulula zii-fabs ezikhoyo, nangona ukuphathwa okukhethekileyo kuyadingeka ngenxa yobunzima obukhulu be-SiC (9.5 Mohs). Njengoko umthamo wemveliso usanda, i-substrate ye-SiC eyi-intshi ezili-12 kulindeleke ukuba ibe ngumgangatho weshishini kwizicelo zamandla aphezulu, iqhubela phambili ubuchule kwiinkqubo zokuguqula amandla kwiimoto, amandla avuselelekayo, kunye nokuguqulwa kwamandla kwimizi-mveliso.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparameter zobugcisa

Inkcazelo ye-Substrate ye-Silicon Carbide (SiC) ye-intshi ezili-12
Ibanga		Imveliso yeZeroMPD Ibanga (Ibanga le-Z)	Imveliso Esemgangathweni Ibanga (Ibanga le-P)		Ibanga elingeyonyani (Ibanga le-D)
Ububanzi		3 0 0 mm~1305mm
Ubukhulu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Uqeqesho lweWafer		I-axis engasebenziyo: 4.0° ukuya kwi-<1120 >±0.5° kwi-4H-N, I-axis engasebenziyo: <0001>±0.5° kwi-4H-SI
Uxinano lweeMipayipi ezincinci	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukuxhathisa	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Uqhelaniso oluPhambili oluSicaba		{10-10} ±5.0°
Ubude obuPhambili obuSicaba	4H-N	N / A
	4H-SI	I-Notch
Ukukhutshwa komda		3 mm
I-LTV/TTV/Isaphetha/I-Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Uburhabaxa		I-Polish Ra≤1 nm
		I-CMP Ra≤0.2 nm			I-Ra≤0.5 nm
Iimfanta zoMphetho ngokukhanya okuphezulu Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa Iindawo zePolytype Ngokukhanya Okuphezulu Izinto ezibandakanyiweyo zeCarbon ezibonakalayo Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu		Akukho nanye Indawo eqokelelweyo ≤0.05% Akukho nanye Indawo eqokelelweyo ≤0.05% Akukho nanye			Ubude obuqokelelweyo ≤ 20 mm, ubude obunye ≤2 mm Indawo eqokelelweyo ≤0.1% Indawo eqokelelweyo≤3% Indawo eqokelelweyo ≤3% Ubude obuqokelelweyo ≤1 × ububanzi besitya esisicaba
Iitships zomphetho ngokukhanya okuphezulu		Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥0.2mm			7 zivunyelwe, ≤1 mm nganye
(TSD) Ukususwa kwesikrufu sokutsala imisonto		≤500 cm-2		N / A
(BPD) Ukususwa kwesiseko sendiza		≤1000 cm-2		N / A
Ungcoliseko lweSilicon Surface Lubangelwa kukukhanya okuPhakamileyo		Akukho nanye
Ukupakisha		Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye
Amanqaku:
1 Imida yeziphene isebenza kumphezulu we-wafer yonke ngaphandle kwendawo yokukhupha umphetho. 2 Imikrwelo mayijongwe ebusweni bukaSi kuphela. 3 Idatha yokwahlukana kwesakhiwo ivela kwiiwafers eziqoshiweyo ze-KOH kuphela.

Ezona mpawu

1. Inzuzo yobukhulu obukhulu: I-substrate ye-SiC eyi-intshi ezili-12 (i-substrate ye-silicon carbide eyi-intshi ezili-12) inika indawo enkulu ye-single-wafer, nto leyo evumela ukuba kuveliswe iitships ezininzi nge-wafer nganye, ngaloo ndlela kunciphisa iindleko zokuvelisa kunye nokwandisa isivuno.
2. Izinto Ezisebenza Ngobuninzi: Ukumelana nobushushu obuphezulu be-silicon carbide kunye namandla entsimi aphantsi kwenza i-substrate eyi-12-intshi ifaneleke kakhulu kwizicelo ze-voltage ephezulu kunye ne-frequency ephezulu, ezifana nee-EV inverters kunye neenkqubo zokutshaja ngokukhawuleza.
3. Ukuhambelana Kokusebenza: Nangona iSiC inobunzima obukhulu kunye nemingeni yokucubungula, i-substrate yeSiC eyi-12-intshi ifikelela kwiziphene eziphantsi zomphezulu ngokusebenzisa iindlela zokusika nokupholisha eziphuculiweyo, nto leyo ephucula imveliso yesixhobo.
4. Ulawulo Oluphezulu Lobushushu: Ngombane ongcono wobushushu kunezixhobo ezisekwe kwi-silicon, i-substrate eyi-12-intshi ijongana ngokufanelekileyo nokusasazeka kobushushu kwizixhobo ezinamandla aphezulu, yandisa ubomi bezixhobo.

Izicelo eziphambili

1. Iimoto zoMbane: I-substrate ye-SiC eyi-intshi ezili-12 (i-substrate ye-silicon carbide eyi-intshi ezili-12) yinxalenye ephambili yeenkqubo zokuqhuba umbane zesizukulwana esilandelayo, ezivumela ii-inverters ezisebenzayo kakhulu eziphucula ububanzi kunye nexesha lokutshaja.

2. Izitishi zeSiseko ze-5G: Izitishi zeSiC ezinkulu zixhasa izixhobo zeRF ezisebenza rhoqo, zihlangabezana neemfuno zezitishi zeSiseko ze-5G zamandla aphezulu kunye nokulahleka okuphantsi.

3. Izixhobo zoMbane zeMveliso: Kwii-solar inverters kunye nee-smart grids, i-substrate eyi-12-intshi inokumelana nee-voltage eziphezulu ngelixa inciphisa ukulahleka kwamandla.

4. Ii-elektroniki zabathengi: Iitshaja ezikhawulezayo zexesha elizayo kunye nezixhobo zamandla eziko ledatha zinokusebenzisa ii-substrates ze-SiC eziyi-12-intshi ukuze zifikelele kubukhulu obuncinci kunye nokusebenza kakuhle okuphezulu.

Iinkonzo ze-XKH

Siziingcali kwiinkonzo zokucubungula ezenzelwe wena ze-12-intshi SiC substrates (12-intshi silicon carbide substrates), kuquka:
1. Ukusika kunye nokupolisha: Ukulungiswa kwe-substrate okonakala kancinci, okuthe tyaba kakhulu okwenzelwe iimfuno zabathengi, ukuqinisekisa ukusebenza okuzinzileyo kwesixhobo.
2. Inkxaso yoKhulo lwe-Epitaxial: Iinkonzo ze-epitaxial wafer ezikumgangatho ophezulu zokukhawulezisa ukwenziwa kweetships.
3. I-Small-Batch Prototyping: Ixhasa ukuqinisekiswa kwe-R&D kumaziko ophando kunye namashishini, inciphisa imijikelo yophuhliso.
4. Ukubonisana ngoBugcisa: Izisombululo eziqala ekupheleni ukuya ekupheleni ukusuka ekukhetheni izinto ukuya ekuphuculeni inkqubo, ukunceda abathengi ukuba boyise imingeni yokucubungula iSiC.
Nokuba zezemveliso enkulu okanye ezenziwe ngokwezifiso ezikhethekileyo, iinkonzo zethu ze-substrate ze-SiC ze-12-intshi zihambelana neemfuno zakho zeprojekthi, zinika amandla ukuqhubela phambili kwetekhnoloji.