I-Wafer yeSapphire ye-intshi ezili-12 yokwenziwa kwe-High-Volume Semiconductor Production

I-Wafer yeSapphire ye-intshi ezili-12 yokwenziwa kwe-High-Volume Semiconductor Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-wafer yesafire eyi-intshi ezili-12 yenzelwe ukuhlangabezana neemfuno ezikhulayo zokwenziwa kwe-semiconductor enkulu, ephezulu kunye ne-optoelectronic. Njengoko uyilo lwezixhobo luqhubeka nokukhula kwaye imigca yemveliso isiya kwiifomathi ze-wafer ezinkulu, ii-substrates zesafire ezineedayamitha ezinkulu kakhulu zibonelela ngeenzuzo ezicacileyo kwimveliso, ukulungiswa kwesivuno, kunye nolawulo lweendleko.

Thumela i-imeyile kuthi

Iimbonakalo

Umzobo oneenkcukacha

Intshayelelo ye-wafer yesafire ye-intshi ezili-12

Zenziwe nge-high-purity single-crystal Al₂O₃, ii-wafer zethu ze-sapphire eziyi-12 intshi zidibanisa amandla agqwesileyo oomatshini, uzinzo lobushushu, kunye nomgangatho womphezulu. Ngokukhula kwekristale okuphuculweyo kunye nokulungiswa kwe-wafer ngokuchanekileyo, ezi substrates zibonelela ngokusebenza okuthembekileyo kwi-LED ephucukileyo, i-GaN, kunye nezicelo ezikhethekileyo ze-semiconductor.

Iimpawu zezinto eziphathekayo

I-Sapphire (i-single-crystal aluminum oxide, i-Al₂O₃) yaziwa kakhulu ngeempawu zayo ezibonakalayo nezingokwekhemikhali. Ii-wafers ze-sapphire eziyi-12 intshi zizuza zonke izibonelelo zezinto ze-sapphire ngelixa zibonelela ngendawo enkulu enokusebenziseka.

Iimpawu eziphambili zezinto ezibonakalayo ziquka:

Ubulukhuni obuphezulu kakhulu kunye nokumelana nokuguguleka
Uzinzo oluhle kakhulu lobushushu kunye nendawo yokunyibilika ephezulu
Ukumelana okuphezulu kweekhemikhali kwi-asidi kunye ne-alkalis
Ukukhanya okuphezulu kwe-optical ukusuka kwi-UV ukuya kwi-IR wavelengths
Iipropati ezintle kakhulu zokukhusela umbane

Ezi mpawu zenza ii-wafers zesafire eziyi-12 intshi zilungele iimeko ezinzima zokucubungula kunye neenkqubo zokuvelisa ii-semiconductor ezishushu kakhulu.

Inkqubo yoMveliso

Ukuveliswa kwee-wafers zesafire eziyi-12 intshi kufuna ukukhula kwekristale okuphucukileyo kunye nobuchwepheshe bokucubungula ngokuchanekileyo. Inkqubo yokuvelisa eqhelekileyo ibandakanya:

Ukukhula Kwekristale Eyodwa
Iikristale zesafire ezicocekileyo kakhulu zikhuliswa kusetyenziswa iindlela eziphambili ezifana ne-KY okanye ezinye iiteknoloji zokukhula kwekristale ezinobukhulu obukhulu, ukuqinisekisa ukujongwa kwekristale ngendlela efanayo kunye noxinzelelo oluphantsi lwangaphakathi.
Ukubumba kunye nokuSika kweCrystal
I-sapphire ingot yenziwe ngokuchanekileyo kwaye yanqunyulwa yaba zii-wafers ezingama-intshi ezili-12 kusetyenziswa izixhobo zokusika ezichanekileyo ukuze kuncitshiswe umonakalo ongaphantsi komhlaba.
Ukulepha kunye nokupolisha
Iinkqubo zokuleqa ezineenyathelo ezininzi kunye nokupolishwa koomatshini beekhemikhali (i-CMP) ziyasetyenziswa ukuze kufezekiswe uburhabaxa bomphezulu, ukuthamba, kunye nokufana kobukhulu.
Ukucoca kunye nokuhlola
I-wafer nganye yesafire eyi-intshi ezili-12 ihlanjwa ngokucokisekileyo kwaye ihlolwe ngokungqongqo, kubandakanya umgangatho womphezulu, i-TTV, i-bow, i-warp, kunye nohlalutyo lweziphene.

Izicelo

Iiwafers zesafire eziyi-12 intshi zisetyenziswa kakhulu kubuchwepheshe obuphambili nobutsha, kuquka:

Ii-substrates ze-LED ezinamandla aphezulu kunye nokukhanya okuphezulu
Izixhobo zamandla ezisekelwe kwiGaN kunye nezixhobo zeRF
Izixhobo zokuthwala izixhobo ze-semiconductor kunye nezixhobo zokukhusela ubushushu
Iifestile ezibonakalayo kunye nezixhobo ezibonakalayo ezinkulu
Ukupakisha kwe-semiconductor okuphambili kunye neenkampani ezikhethekileyo zeenkqubo

Ububanzi obukhulu buvumela ukuveliswa okuphezulu kunye nokusebenza kakuhle kweendleko kwimveliso yobuninzi.

Iingenelo zeeWafers zeSapphire eziyi-12 intshi

Indawo enkulu enokusetyenziselwa imveliso ephezulu yesixhobo nge-wafer nganye
Ukuphuculwa kokuvumelana kunye nokufana kwenkqubo
Ixabiso eliphantsi ngesixhobo ngasinye kwimveliso yomthamo ophezulu
Amandla agqwesileyo oomatshini okuphatha ubukhulu obukhulu
Iinkcukacha ezinokwenziwa ngokwezifiso zezicelo ezahlukeneyo

Iinketho zokwenza ngokwezifiso

Sinikezela ngokwezifiso eziguquguqukayo zeewafers zesafire eziyi-12 intshi, kuquka:

Ukujongwa kwekristale (i-C-plane, i-A-plane, i-R-plane, njl.njl.)
Ubukhulu kunye nokunyamezela ububanzi
Ukupolisha icala elinye okanye icala eliphindwe kabini
Iprofayili yomphetho kunye noyilo lwe-chamfer
Iimfuneko zoburhabaxa kunye nobuthe tyaba bomphezulu

Ipharamitha	Inkcazo	Amanqaku
Ububanzi beWafer	Ii-intshi ezili-12 (300 mm)	I-wafer eqhelekileyo enobubanzi obukhulu
Izinto eziphathekayo	I-Sapphire yekristale enye (Al₂O₃)	Ubunyulu obuphezulu, ibakala le-elektroniki/le-optical
Uqhelaniso lwekristale	Inqwelo-moya i-C (0001), inqwelo-moya i-A (11-20), inqwelo-moya i-R (1-102)	Iindlela zokukhetha ezikhoyo ziyafumaneka
Ubukhulu	430–500 μm	Ubukhulu obuqhelekileyo buyafumaneka xa uceliwe
Ukunyamezela Ubukhulu	±10 μm	Ukunyamezelana okuqinileyo kwezixhobo eziphambili
Utshintsho Lobukhulu Obupheleleyo (TTV)	≤10 μm	Iqinisekisa ukucutshungulwa okufanayo kwi-wafer
Ukuqubuda	≤50 μm	Ilinganiswe phezu kwe-wafer yonke
I-Warp	≤50 μm	Ilinganiswe phezu kwe-wafer yonke
Umphezulu wokugqiba	Ipholishwe ngecala elinye (SSP) / Ipholishwe ngecala elinye (DSP)	Umphezulu osemgangathweni ophezulu we-optical
Uburhabaxa bomphezulu (Ra)	≤0.5 nm (ipolished)	Ukuqina kwenqanaba le-athomu lokukhula kwe-epitaxial
Iprofayile yoMda	Umphetho weChamfer / ojikelezileyo	Ukuthintela ukuqhekeka ngexesha lokuphatha
Ukuchaneka koQeqesho	±0.5°	Iqinisekisa ukukhula okufanelekileyo komaleko we-epitaxial
Uxinano olupheleleyo lweziphene	<10 cm⁻²	Ilinganiswa ngokuhlolwa kwamehlo
Ukuthe tyaba	≤2 μm / 100 mm	Iqinisekisa i-lithography efanayo kunye nokukhula kwe-epitaxial
Ucoceko	Iklasi ye-100 - Iklasi ye-1000	Iyahambelana negumbi lokucoca
Ukuhanjiswa kokukhanya	>85% (UV–IR)	Kuxhomekeke kubude be-wavelength kunye nobukhulu

Imibuzo ebuzwa rhoqo ngeWafer yeSapphire ye-intshi ezili-12

Q1: Bungakanani ubukhulu obuqhelekileyo be-wafer yesafire eyi-intshi ezili-12?
A: Ubukhulu obuqhelekileyo buqala kwi-430 μm ukuya kwi-500 μm. Ubukhulu obulungiselelwe wena bunokuveliswa ngokweemfuno zabathengi.

Umbuzo 2: Zeziphi iindlela zekristale ezifumanekayo kwiiwafers zesafire eziyi-12 intshi?
A: Sinikezela ngeendlela zokujonga i-C-plane (0001), i-A-plane (11-20), kunye ne-R-plane (1-102). Ezinye iindlela zokujonga zinokwenziwa ngokwezifiso ngokusekelwe kwiimfuno ezithile zesixhobo.

Umbuzo 3: Ithini i-total thickness variation (TTV) ye-wafer?
A: Iiwafer zethu zesafire eziyi-12 intshi zihlala zine-TTV ≤10 μm, nto leyo eqinisekisa ukuba ziyafana kumphezulu wewafer ukuze kwenziwe izixhobo ezisemgangathweni ophezulu.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.