I-SiC Ceramic Tray End Effector Wafer Ukuphatha izinto ezenziwe ngokweSiko

I-SiC Ceramic Tray End Effector Wafer Ukuphatha amacandelo enziwe ngokweSiko, umfanekiso obonisiweyo

Inkcazelo emfutshane:

Iimpawu eziqhelekileyo	Iiyunithi	Imilinganiselo
Ulwakhiwo		FCC isigaba β
Ukuqhelaniswa	Iqhezu (%)	111 ekhethwayo
Unizi lolwapho kuyiwa khona	g/cm³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubushushu Umthamo	J·kg⁻¹·K⁻¹	640
Ukwandiswa kweThermal 100–600 °C (212–1112 °F)	10⁻⁶·K⁻¹	4.5
Imodulus yolutsha	I-GPa (4pt bend, 1300°C)	430
Ubungakanani benkozo	μm	2~10
Iqondo lobushushu elisezantsi	°C	2700
Amandla e-Flexural	MPa (RT 4-point)	415
I-Thermal conductivity	(W/mK)	300

Thumela i-imeyile kuthi

Iimbonakalo

I-SiC yeCeramic kunye ne-Alumina yeCeramic Custom Components, emfutshane

I-Silicon Carbide (i-SiC) i-Ceramic Custom Components

I-Silicon Carbide (i-SiC) amacandelo e-ceramic yesiko zizinto ze-ceramic ezisebenza kakhulu kwimizi-mveliso eyaziwa ngokuba yi-ceramic.ubunzima obuphezulu kakhulu, uzinzo olubalaseleyo lwe-thermal, ukuxhathisa okugqwesileyo kwe-corrosion, kunye nokuhanjiswa okuphezulu kwe-thermal. I-Silicon Carbide (SiC) amacandelo e-ceramic yesiko yenza ukuba kugcinwe uzinzo kwisakhiwoindawo ezinobushushu obuphezulu ngelixa ixhathisa ukhukuliseko olusuka kwiasidi ezomeleleyo, iialkali, kunye nesinyithi esinyibilikisiweyo.. Iiseramics ze-SiC zenziwe ngeenkqubo ezifanaukuntywila okungenaxinzelelo, ukusabela kwe-sintering, okanye ukucofa ngokushushukwaye inokwenziwa ngokweemo ezintsonkothileyo, kubandakanya imisesane yokutywina ngoomatshini, imikhono yeshaft, imilomo, iityhubhu zesithando somlilo, izikhephe ezisicaba, kunye neepleyiti ezikwaziyo ukunxitywa.

IAlumina Ceramic Custom Components

IAlumina (Al₂O₃) iikhomponenti zesiko se-ceramic zigxininisaUkugquma okuphezulu, ukomelela okuhle koomatshini, kunye nokumelana nokunxiba. Ihlelwe ngokwamanqanaba ococeko (umzekelo, i-95%, i-99%), i-Alumina (Al₂O₃) iikhomponenti ze-ceramic ezenziwe ngokuchaneka zivumela ukuba zenziwe zibe yi-insulators, iibheringi, izixhobo zokusika, kunye nokufakelwa kwezonyango. Iiseramikhi zealumina zenziwa ngokuyintloko ngokusebenzisaukucinezela okomileyo, ukubumba inaliti, okanye iinkqubo zokucinezela isostatic, ezinemigangatho ekhazimliswayo ukuya kutsho kwisipili.

I-XKH igxile kwi-R&D kunye nemveliso yesiko lei-silicon carbide (SiC) kunye ne-alumina (Al₂O₃) iiceramics. Iimveliso ze-ceramic ze-SiC zigxininisa kubushushu obuphezulu, ukunxitywa okuphezulu, kunye neendawo ezinobungozi, ukugubungela izicelo ze-semiconductor (umzekelo, izikhephe ze-wafer, i-cantilever paddles, i-furnace tubes) kunye nezixhobo ze-thermal field kunye ne-high-end seals kumacandelo amatsha amandla. Iimveliso ze-alumina ze-ceramic zigxininisa ukugquma, ukutywinwa, kunye neempawu ze-biomedical, ezibandakanya i-electronic substrates, imisesane yokutywina ngoomatshini, kunye nokufakelwa kwezonyango. Ukusebenzisa itekhnoloji ezifanaUkucinezela kwe-isostatic, ukucofa okungenaxinzelelo, kunye nomatshini ochanekileyo, sibonelela ngezisombululo ezilungiselelwe ukusebenza okuphezulu kumashishini abandakanya i-semiconductors, i-photovoltaics, i-aerospace, unyango, kunye nokulungiswa kweekhemikhali, ukuqinisekisa ukuba amacandelo ahlangabezana neemfuno ezingqongqo zokuchaneka, ixesha elide, kunye nokuthembeka kwiimeko ezinzima.

I-SiC Ceramic Functional Chucks kunye ne-CMP yokuSila iiDissIntshayelelo

IiChucks zeSiC zeCeramic Vacuum

I-Silicon Carbide (i-SiC) i-Ceramic Vacuum Chucks zizixhobo ezichanekileyo eziphezulu ze-adsorption ezenziwe kwi-high-performance silicon carbide (SiC) imathiriyeli ye-ceramic. Ziyilelwe ngokukodwa usetyenziso olufuna ucoceko olugqithisileyo kunye nozinzo, njenge-semiconductor, i-photovoltaic, kunye nemizi-mveliso yokwenziwa echanekileyo. Iinzuzo zabo ezingundoqo zibandakanya: umgangatho we-mirror-level polished surface (i-flatness elawulwa ngaphakathi kwe-0.3-0.5 μm), ukuqina okuphezulu kakhulu kunye ne-coefficient ephantsi yokwandiswa kwe-thermal (ukuqinisekisa ukumila kwe-nano-level kunye nozinzo lwendawo), ubume obulula kakhulu (ukunciphisa kakhulu ukuguga kunye nokunciphisa ukunyakaza) ukuya kwi-9.5, igqithise kakhulu ixesha lokuphila kweentsimbi zentsimbi) . Ezi zakhiwo zenza umsebenzi ozinzileyo kwiindawo ezingqongileyo kunye nokutshintshana kwamaqondo aphezulu kunye namaqondo aphantsi, ukubola okuqinileyo, kunye nokuphathwa kwesantya esiphezulu, ukuphucula kakhulu ukusetyenzwa kwesivuno kunye nokusebenza kakuhle kwemveliso kumacandelo achanekileyo njengama-wafers kunye nezinto ezibonakalayo.

ISilicon Carbide (SiC) iBump Vacuum Chuck yeMetrology kunye noHlolo.

Yenzelwe iinkqubo zokuhlola i-wafer defect, esi sixhobo sobhengezo sichaneke kakhulu senziwe kwi-silicon carbide (SiC) imathiriyeli ye-ceramic. Ubume bayo obukhethekileyo bobumpumlo bomphezulu bubonelela ngamandla anamandla e-vacuum adsorption, ngelixa unciphisa indawo yokunxibelelana ne-wafer, ngaloo ndlela ikhusela umonakalo okanye ungcoliseko kumphezulu we-wafer kunye nokuqinisekisa uzinzo kunye nokuchaneka ngexesha lokuhlolwa. I-chuck ibonakalisa ukuthamba okukhethekileyo (0.3-0.5 μm) kunye nomphezulu ogudisiweyo wesipili, udityaniswe nobunzima obukhanyayo, kunye nokuqina okuphezulu, ukuqinisekisa uzinzo ngexesha lentshukumo enesantya esiphezulu. I-coefficient yayo ephantsi kakhulu yokwandiswa kwe-thermal, iqinisekisa uzinzo lwe-dimensional phantsi kokuguquguquka kweqondo lokushisa, ngelixa ukuxhathisa ukunxiba okubalaseleyo kwandisa ubomi benkonzo. Imveliso ixhasa ukulungelelaniswa kwe-6, 8, kunye ne-12-intshi ye-intshi, ukuhlangabezana neemfuno zokuhlolwa kweesayizi ezahlukeneyo ze-wafer.

I-Flip Chip Bonding Chuck

I-flip chip bonding chuck licandelo elingundoqo kwiinkqubo ze-chip flip-chip bonding, eyilelwe ngokukodwa ii-wafers ezithengisayo, ukuqinisekisa uzinzo ngexesha lesantya esiphezulu, ukuchaneka okuphezulu kwe-bonding. Ibonisa umphezulu ogutyungelwe sisipili(ukukhanya/ukufana ≤1 μm) kunye nemijelo yerhasi echanekileyo, ukufezekisa amandla afanayo adsorption, ukuthintela ukufuduswa kwewafer okanye umonakalo. Ukuqina kwayo okuphezulu kunye ne-Ultra-low coefficient yokwandiswa kwe-thermal (kufutshane ne-silicon) iqinisekisa uzinzo lwe-dimensional kwindawo yokudibanisa ubushushu obuphezulu, ngelixa izinto ezinoxinano oluphezulu (umzekelo, i-silicon carbide okanye i-ceramics ekhethekileyo) ithintela ngokufanelekileyo ukungena kwegesi, ukugcina ukuthembeka kwexesha elide. Ezi mpawu ngokudibeneyo zixhasa ukuchaneka kwe-micron-level bonding, kwaye ziphucula kakhulu isivuno sokupakishwa kwe-chip.

SiC Bonding Chuck

Isilicon carbide (SiC) bonding chuck sisixhobo esingundoqo kwiinkqubo ze-chip bonding, eyilelwe ngokukodwa ukubhengeza kunye nokukhusela iiwafers, ukuqinisekisa ukusebenza okuzinzileyo phantsi kobushushu obuphezulu kunye neemeko zoxinzelelo oluphezulu. Yenziwe kwi-high-density silicon carbide ceramic (porosity <0.1%), ifezekisa ukuhanjiswa kwamandla afanayo adsorption (ukutenxa <5%) ngokusebenzisa i-nanometer-level mirror polishing (uburhabaxa bomphezulu Ra <0.1 μm) kunye nokuchaneka kwegas channel grooves(i-pore dem 0 μ μm), ukuthintela umonakalo wepore 0 μm-5m, ukuthintela ukonakala kwendawo: 5m-. I-coefficient yayo ephantsi kakhulu yokwandiswa kwe-thermal (4.5 × 10⁻⁶/℃) ihambelana ngokusondeleyo ne-silicon wafers, inciphisa i-warpage ye-thermal-induced warpage. Idityaniswe nokuqina okuphezulu (imodyuli ye-elastic> 400 GPa) kunye ≤1 μm flatness/parallelism, iqinisekisa ukuchaneka kolungelelwaniso. Isetyenziswa kakhulu kwipakethe ye-semiconductor, ukupakishwa kwe-3D, kunye nokudityaniswa kwe-Chiplet, ixhasa usetyenziso oluphezulu lwemveliso olufuna ukuchaneka kwe-nanoscale kunye nokuzinza kwe-thermal.

Idiski yokuSila yeCMP

Idiski yokusila ye-CMP yinxalenye engundoqo yesixhobo sokupholisha imichiza (CMP), eyilelwe ngokukodwa ukubamba ngokukhuselekileyo kunye nokuzinzisa ama-wafers, ngexesha lokupolisha okuhamba ngesantya esiphezulu, okwenza i-nanometer-level global planarization. Yakhiwe ngokuqina okuphezulu, izinto ezinoxinano oluphezulu (umzekelo, iiseramics zesilicon carbide okanye ii-alloys ezikhethekileyo), iqinisekisa i-vacuum adsorption efanayo ngokusebenzisa imijelo yerhasi eyenziwe ngokuchanekileyo. Umphezulu ogudisiweyo wesipili(ukukhanya/ukufana ≤3 μm) uqinisekisa unxibelelwano olungenaxinzelelo kunye neewafers, ngelixa i-ultra-low coefficient yokwandiswa kwe-thermal (ehambelana ne-silicon) kunye neetshaneli zokupholisa zangaphakathi zicinezela ngokufanelekileyo ukuguga kwe-thermal. Iyahambelana ne-12-intshi (i-750 mm ububanzi) ii-wafers, i-disc ikhulisa itekhnoloji ye-diffusion bonding, ukuqinisekisa ukudityaniswa komthungo kunye nokuthembeka kwexesha elide kwezakhiwo ze-multilayer phantsi kobushushu obuphezulu kunye noxinzelelo, iphucula kakhulu inkqubo ye-CMP kunye nesivuno.

Customized ezahlukeneyo SiC Ceramics Amacandelo Intshayelelo

ISilicon Carbide (SiC) Isibuko sesikwere

I-Silicon Carbide (i-SiC) i-Square Mirror yinto echanekileyo ephezulu ye-optical component eyenziwe kwi-silicon carbide ceramic, eyenzelwe ngokukodwa izixhobo zokuvelisa ze-semiconductor eziphezulu ezifana noomatshini be-lithography. Ifezekisa ubunzima obukhanyayo kunye nokuqina okuphezulu (imodyuli ye-elastic> 400 GPa) ngoyilo lwesakhiwo esilula (umzekelo, umngxuma ongasemva wobusi), ngelixa i-coefficient yokwandisa i-thermal ephantsi kakhulu (≈4.5×5x10⁻⁶ ukuguquguquka kweqondo lobushushu eliphantsi/≈4.5 × 10⁻⁶ ukuguquguquka. Umphezulu wesipili, emva kokupolisha ngokuchanekileyo, ufumana ≤1 μm flat/unxunguphalo, kunye nokuxhathisa okukhethekileyo kokunxiba (Mohs hardness 9.5) bandisa ubomi benkonzo. Isetyenziswa kakhulu kwiindawo zokusebenza koomatshini be-lithography, izibonisi ze-laser, kunye neeteleskopu zendawo apho ukuchaneka okuphezulu kunye nokuzinza kubaluleke kakhulu.

ISilicon Carbide (SiC) iziKhokelo zokuFaka koMoya

ISilicon Carbide (SiC) IziKhokelo zokuFaka koMoya zisebenzisa itekhnoloji yokuthwala i-aerostatic engadibaniyo, apho igesi ecinezelweyo yenza ifilimu yomoya yenqanaba lemicron (ngokuqhelekileyo i-3-20μm) ukuphumeza intshukumo egudileyo engenakhuhlane kunye ne-vibration. Banikezela ngokuchaneka kwentshukumo ye-nanometric (ukuphindaphinda ukuchaneka kokubeka ukuya kuthi ga kwi-± 75nm) kunye nokuchaneka kwejometri ye-sub-micron (ukuthe ngqo ± 0.1-0.5μm, flatness ≤1μm) , eyenziwe ngolawulo lwengxelo ye-loop evaliweyo kunye nezikali ezichanekileyo zokugaya okanye i-laser interferometers. I-core silicon carbide ceramic material (ukhetho lubandakanya iCoresic® SP/Marvel Sic series) ibonelela nge-ultra-high stiffness (elastic modulus >400 GPa), ultra-low thermal expansion coefficient (4.0–4.5×10⁻⁶/K, i-silicon ehambelanayo (. .0 poro) , kunye ne-silicon ephezulu. Uyilo lwayo olukhaphukhaphu (ubuninzi 3.1g/cm³, okwesibini kuphela kwi-aluminium) kunciphisa inertia eshukumayo, ngelixa ukuxhathisa okukhethekileyo (ubunzima be-Mohs 9.5) kunye nokuzinza kwe-thermal, kuqinisekisa ukuthembeka kwexesha elide phantsi kwe-speed-speed (1m / s) kunye neemeko zokunyuka kwesantya esiphezulu (4G). Ezi zikhokelo zisetyenziswa ngokubanzi kwi-semiconductor lithography, ukuhlolwa kwe-wafer, kunye ne-ultra-precision machining.

I-Silicon Carbide (i-SiC) i-Cross-Beams

I-Silicon Carbide (i-SiC) I-Cross-Beams zizinto ezishukumayo ezingundoqo ezenzelwe izixhobo ze-semiconductor kunye nezicelo eziphezulu zemizi-mveliso, ngokuyintloko zisebenza ukuthwala izigaba ze-wafer kwaye zibakhokele kwiindlela ezichaziweyo zesantya esiphezulu, i-ultra-precision motion. Ukusebenzisa i-silicon carbide ceramic esebenza kakhulu (ukhetho lubandakanya iCoresic® SP okanye iMarvel Sic series) kunye noyilo olukhaphukhaphu lolwakhiwo, bafumana ubunzima obukhanyayo obuphezulu kunye nokuqina okuphezulu (imodyuli ye-elastic> 400 GPa), kunye ne-ultra-low coefficient yokwandiswa kwe-thermal 5 × 10/⁶ ⁄⁶ ephezulu. Ubuninzi (i-porosity <0.1%), ukuqinisekisa ukuzinza kwe-nanometric (i-flatness / parallelism ≤1μm) phantsi koxinzelelo lwe-thermal kunye noomatshini. Iipropati zabo ezidibeneyo zixhasa imisebenzi ye-speed-speed and high-acceleration (umzekelo, i-1m / s, i-4G), ibenza ukuba bafaneleke kumatshini we-lithography, iinkqubo zokuhlola i-wafer, kunye nokuveliswa ngokuchanekileyo, ukuphucula ngokubonakalayo ukuchaneka kwentshukumo kunye nokusebenza kakuhle kokuphendula.

I-Silicon Carbide (i-SiC) i-Motion Components

ISilicon Carbide (SiC) Amacandelo eMotion ngamalungu abalulekileyo ayilelwe iinkqubo zokushukuma ze-semiconductor ezichaneke kakhulu, zisebenzisa izixhobo zeSiC ezinoxinano oluphezulu, (umzekelo, iCoresic® SP okanye iMarvel Sic series, porosity <0.1%) kunye noyilo olukhaphukhaphu lolwakhiwo ukufezekisa ubunzima bokukhanya kwe-Ultra> nokuqina okuphezulu kwe-400 ye-Glastic stifflus). Nge-coefficient ephantsi kakhulu yokwandiswa kwe-thermal (≈4.5×10⁻⁶/℃), baqinisekisa uzinzo lwe-nanometric(i-flatness/parallelism ≤1μm) phantsi kokuguquguquka kwe-thermal. Ezi zakhiwo ezidibeneyo zixhasa ukusebenza kwe-speed-speed and high-acceleration operations (umzekelo, i-1m / s, i-4G), ezenza zibe zilungele oomatshini be-lithography, iinkqubo zokuhlola i-wafer, kunye nokuveliswa ngokuchanekileyo, ukwandisa kakhulu ukuchaneka kwentshukumo kunye nokusebenza kakuhle kokuphendula.

I-Silicon Carbide (SiC) i-Optical Path Plate

I-Silicon Carbide (i-SiC) i-Optical Path Plate liqonga elisisiseko elenzelwe iinkqubo ezimbini-zokubona indlela, kwisixhobo sokuhlola i-wafer. Yenziwe kwi-silicon carbide ceramic esebenza kakhulu, ifikelela kwi-ultra-lightweight (ubuninzi ≈3.1 g/cm³) kunye nokuqina okuphezulu (imodyuli ye-elastic> 400 GPa) ngoyilo lolwakhiwo olukhaphukhaphu, ngelixa ine-coefficient esezantsi esezantsi ye-thermal. (≈4.5×10⁻⁶/℃) kunye noxinzelelo olukhulu (porosity <0.1%), ukuqinisekisa ukuzinza kwe-nanometric(i-flatness/parallelism ≤0.02mm) phantsi kokuguquguquka kwe-thermal kunye nomatshini. Ngobukhulu bayo obukhulu obukhulu (900 × 900mm) kunye nokusebenza ngokugqithiseleyo okugqwesileyo, kunika isiseko sexesha elide elizinzileyo lokunyuka kweenkqubo ze-optical systems, ukwandisa kakhulu ukuchaneka kokuhlolwa kunye nokuthembeka. Isetyenziswa kakhulu kwi-semiconductor metrology, ulungelelwaniso lwamehlo, kunye neenkqubo zokucinga ezichanekileyo.

Graphite + Tantalum Carbide Coated Guide Ring

I-Graphite + Tantalum Carbide Coated Guide Ring yinxalenye ebalulekileyo eyenzelwe ngokukodwa i-silicon carbide (SiC) isixhobo sokukhula kwekristale enye. Umsebenzi wayo ophambili kukwalathisa ngokuchanekileyo ukuhamba kwerhasi yobushushu obuphezulu, ukuqinisekisa ukufana kunye nozinzo lobushushu kunye nemimandla yokuhamba ngaphakathi kwegumbi lokuphendula. Yenziwe kwi-high-purity graphite substrate (ucoceko> 99.99%) eqatywe nge-CVD-deposited tantalum carbide (TaC) umaleko (umxholo wokungahlambuluki ongaphantsi kwe-5 ppm), ibonisa ukuhanjiswa kwe-thermal (≈120 W/m·K) kunye nobushushu obuphezulu bobushushu obuphezulu ukuya kubushushu obuphezulu. I-2200 ° C), ikhusela ngokufanelekileyo ukubola komphunga we-silicon kunye nokucinezela ukusasazwa kokungcola. Umgangatho ophezulu wokwaleka (ukutenxa <3%, ukugubungela indawo epheleleyo) iqinisekisa isikhokelo esingaguqukiyo segesi kunye nokuthembeka kwenkonzo yexesha elide, kuphucula kakhulu umgangatho kunye nesivuno sokukhula kwekristale enye ye-SiC.

Silicon Carbide (SiC) Furnace Tube Abstract

I-Silicon Carbide (SiC) iTyhubhu yeSithando esiNgqo

I-Silicon Carbide (i-SiC) iTyhubhu yeSithando esiNgqongileyo licandelo elibalulekileyo eliyilelwe izixhobo zemizi-mveliso ezinobushushu obuphezulu, ngokuyintloko isebenza njengetyhubhu ekhuselayo yangaphandle, ukuqinisekisa ukuhanjiswa kwe-thermal efanayo ngaphakathi kwesithando somlilo esiphantsi kweatmosfera yomoya, kunye nobushushu obuqhelekileyo bokusebenza obumalunga ne-1200 ° C. Yenziwe ngoshicilelo lwe-3D oludityanisiweyo lwetekhnoloji, lubonisa umxholo wokungacoceki osisiseko <300 ppm, kwaye unokuzikhethela ngokuxhotyiswa nge-CVD silicon carbide coating, (ukungcola okugquma <5 ppm). Ukudibanisa i-high thermal conductivity (≈20 W/m·K) kunye nokuzinza okumangalisayo kwe-thermal shock (ukumelana ne-thermal gradients> 800 ° C), isetyenziswa ngokubanzi kwiinkqubo zobushushu obuphezulu njengonyango lobushushu le-semiconductor, ukufakwa kwe-photovoltaic, kunye nemveliso ye-ceramic echanekileyo, ukuqinisa kakhulu ukuphuculwa kwezixhobo ze-ceramic ixesha elide.

Silicon Carbide (SiC) Horizontal Furnace Tube

I-Silicon Carbide (SiC) eHorizontal Furnace Tube yinxalenye engundoqo eyenzelwe iinkqubo zobushushu obuphezulu, isebenza njengetyhubhu yenkqubo esebenza kwiatmosphere equlethe ioksijini (igesi esebenzayo), initrogen (igesi ekhuselayo), kunye nomkhondo wehydrogen chloride, enobushushu obuqhelekileyo bokusebenza obumalunga ne-1250°C. Yenziwe ngoshicilelo lwe-3D oludityanisiweyo lwetekhnoloji, lubonisa umxholo wokungacoceki osisiseko <300 ppm, kwaye unokuzikhethela ngokuxhotyiswa nge-CVD silicon carbide coating, (ukungcola okugquma <5 ppm). Ukudibanisa i-thermal conductivity ephezulu (≈20 W/m·K) kunye nozinzo olukhethekileyo lwe-thermal shock (ukumelana ne-thermal gradients>800°C), ifanelekile kwizicelo ezifunwayo ze-semiconductor ezifana ne-oxidation, ukusasazwa, kunye nokubekwa kwefilimu ecekethekileyo, eqinisekisa ubume besakhiwo, imfezeko kunye nokuqina okugqithisileyo kwemeko-bume ephantsi kwemeko-bume egqithisileyo.

Intshayelelo yeSiC Ceramic Fork Arms

Ukwenziwa kweSemiconductor

Kwimveliso ye-wafer ye-semiconductor, iingalo zefolokhwe ye-SiC ceramic zisetyenziselwa ukuhambisa kunye nokubeka ii-wafers, ezihlala zifumaneka:

Izixhobo zokuLungisa iWafer: Ezinje ngeekhasethi ezisicaba kunye nezikhitshane zenkqubo, ezisebenza ngokuzinzileyo kubushushu obuphezulu kunye nemekobume yenkqubo eyonakalisayo.
I-Lithography Machines: Isetyenziswe kumacandelo achanekileyo afana nezigaba, izikhokelo, kunye neengalo zerobhothi, apho ukuqina kwazo okuphezulu kunye nokuguqulwa kwe-thermal ephantsi kuqinisekisa ukuchaneka kwe-nanometer-level motion.
Iinkqubo ze-Etching kunye ne-Diffusion: Ukukhonza njenge-ICP etching trays kunye namacandelo eenkqubo ze-semiconductor diffusion, ukucoceka kwabo okuphezulu kunye nokumelana nokubola kuthintela ukungcoliseka kumagumbi enkqubo.

I-Industrial Automation kunye neRobhothi

Iingalo ze-ceramic ze-SiC ze-ceramic zizinto ezibalulekileyo kwiirobhothi ezisebenza ngokuphezulu kunye nezixhobo ezizenzekelayo:

I-Robotic End Effecters: Isetyenziselwa ukuphatha, ukudibanisa, kunye nokusebenza ngokuchanekileyo. Iimpawu zabo ezikhaphukhaphu (ubuninzi ~ 3.21 g/cm³) ziphucula isantya serobhothi kunye nokusebenza kakuhle, ngelixa ubunzima bazo obuphezulu (ubunzima beVickers ~ 2500) buqinisekisa ukuxhathisa okungaqhelekanga kokunxiba.
Imigca yeMveliso ezenzekelayo: Kwiimeko ezifuna i-high-frequency, i-high-precision handling (umzekelo, i-e-commerce warehouses, ukugcinwa kwefektri), iingalo ze-SiC zefoloko ziqinisekisa ukusebenza okuzinzileyo kwexesha elide.

I-Aerospace kunye namandla amatsha

Kwiimeko ezingqongileyo ezigqithisileyo, iingalo ze-ceramic ze-SiC ze-ceramic ziphakamisa ukuxhathisa kwazo kubushushu obuphezulu, ukuxhathisa ukubola, kunye nokumelana nokothuka kwe-thermal:

I-Aerospace: Isetyenziselwa kwizinto ezibalulekileyo ze-spacecraft kunye ne-drones, apho iimpawu zabo ezikhaphukhaphu kunye nezomelele kakhulu zinceda ukunciphisa ubunzima kunye nokuphucula ukusebenza.
Amandla amatsha: Asetyenziswa kwizixhobo zokuvelisa kwishishini le-photovoltaic (umzekelo, ii-diffusion furnaces) kunye namacandelo achanekileyo okwakhiwa kwebhetri ye-lithium-ion.

INkqubo yoShishino lobushushu obuphezulu

Iingalo zefolokhwe yeceramic yeSiC inokumelana namaqondo obushushu angaphezu kwe-1600°C, izenza zilungele:

I-Metallurgy, iCeramics, kunye neGlass Industries: Isetyenziswa kwii-manipulators zobushushu obuphezulu, iipleyiti zeseta, kunye neepleyiti zokutyhala.
Amandla eNyukliya: Ngenxa yokunganyangeki kwawo ngemitha, afanelekile kumalungu athile kwizixhobo zenyukliya.

Izixhobo zonyango

Kwicandelo lezonyango, iingalo ze-ceramic ze-SiC zisetyenziselwa ikakhulu:

Iirobhothi zonyango kunye nezixhobo zotyando: Zixabiseke ngokuhambelana kwazo ne-biocompatibility, ukuxhathisa ukubola, kunye nokuzinza kwiindawo zokuvala inzala.

SiC Coating Overview

Umaleko we-SiC ngumaleko oshinyeneyo nongagugiyo we-silicon carbide olungiswe ngenkqubo yeChemical Vapor Deposition (CVD). Olu tyaba ludlala indima ebalulekileyo kwiinkqubo ze-semiconductor epitaxial ngenxa yokumelana kwayo okuphezulu kwe-corrosion, ukuzinza okugqwesileyo kwe-thermal, kunye ne-thermal conductivity ebalaseleyo (ukusuka kwi-120-300 W / m · K). Sisebenzisa itekhnoloji ye-CVD ephucukileyo, sifaka ngokulinganayo umaleko obhityileyo we-SiC kwi-graphite substrate, siqinisekisa ubunyulu obuphezulu kunye nokuthembeka kolwakhiwo.

Ngaphaya koko, abathwali be-SiC-coated babonisa amandla akhethekileyo oomatshini kunye nobomi benkonzo ende. Zenzelwe ukumelana namaqondo obushushu aphezulu (akwaziyo ukusebenza ixesha elide ngaphezulu kwe-1600°C) kunye neemeko zekhemikhali eziqatha eziqhelekileyo kwiinkqubo zokwenziwa kwe-semiconductor. Oku kubenza babe lolona khetho lufanelekileyo kwii-wafers ze-GaN epitaxial, ngakumbi kwi-high-frequency kunye nezicelo ezinamandla kakhulu ezifana nezikhululo zesiseko ze-5G kunye ne-RF yangaphambili ye-amplifiers yamandla.

Idatha yeSiC Coating

Iimpawu eziqhelekileyo	Iiyunithi	Imilinganiselo
Ulwakhiwo		FCC isigaba β
Ukuqhelaniswa	Iqhezu (%)	111 ekhethwayo
Unizi lolwapho kuyiwa khona	g/cm³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubushushu Umthamo	J·kg-1 ·K-1	640
Ukwandiswa kweThermal 100–600 °C (212–1112 °F)	10-6K-1	4.5
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ubungakanani benkozo	μm	2~10
Iqondo lobushushu elisezantsi	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
I-Thermal conductivity	(W/mK)	300

Isishwankathelo seSilicon Carbide Ceramic Structural Parts

ISilicon Carbide iiNdawo zeCeramic zeSakhiwo

Amacandelo e-silicon carbide ceramic structural components afunyanwa kumasuntswana e-silicon carbide adityaniswe kunye ngokucofa. Zisetyenziswa ngokubanzi kumacandelo eemoto, oomatshini, iikhemikhali, isemiconductor, itekhnoloji yasemkhathini, i-microelectronics, kunye necandelo lamandla, zidlala indima ebalulekileyo kwizicelo ezahlukeneyo kula mashishini. Ngenxa yeepropathi zabo ezikhethekileyo, i-silicon carbide ye-ceramic structural components iye yaba yinto efanelekileyo kwiimeko ezinzima ezibandakanya ubushushu obuphezulu, uxinzelelo oluphezulu, ukubola, kunye nokunxiba, ukuhambisa ukusebenza okuthembekileyo kunye nokuphila ixesha elide kwiindawo zokusebenza ezinzima.

Ezi zixhobo ziyaziwa ngokugqithiswa kwe-thermal conductivity ebalaseleyo, eyenza kube lula ukuhanjiswa kobushushu kwizicelo ezahlukeneyo zobushushu obuphezulu. Ukuxhathisa ukutshatyalaliswa kwe-thermal ye-silicon carbide ceramics ibenza bakwazi ukujamelana nokutshintsha kweqondo lokushisa ngokukhawuleza ngaphandle kokuqhekeka okanye ukusilela, ukuqinisekisa ukuthembeka kwexesha elide kwiindawo eziguqukayo ze-thermal.

Ukumelana ne-oxidation yendalo ye-silicon carbide ye-ceramic structural components izenza zilungele ukusetyenziswa kwiimeko ezivezwe kumaqondo obushushu aphezulu kunye ne-oxidative atmosphere, iqinisekisa ukusebenza okuzinzileyo kunye nokuthembeka.

SiC Seal Parts Overview

Izitywina ze-SiC lukhetho olufanelekileyo kwiindawo ezinzima (ezifana nokushisa okuphezulu, uxinzelelo oluphezulu, imidiya ebolileyo, kunye nokunxiba kwesantya esiphezulu) ngenxa yobunzima obukhethekileyo, ukuxhathisa ukunxiba, ukumelana nobushushu obuphezulu (ukumelana namaqondo okushisa ukuya kwi-1600 ° C okanye kwi-2000 ° C), kunye nokuxhathisa ukubola. I-conductivity yabo ephezulu ye-thermal iququzelela ukuchithwa kobushushu ngokufanelekileyo, ngelixa i-coefficient yabo ephantsi ye-friction kunye ne-self-lubricating properties iqinisekisa ukuthembeka kokutywinwa kunye nobomi benkonzo ende phantsi kweemeko zokusebenza ezigqithisileyo. Ezi mpawu zenza iimpawu ze-SiC zisetyenziswe ngokubanzi kumashishini afana ne-petrochemicals, imigodi, ukuveliswa kwe-semiconductor, ukucocwa kwamanzi amdaka, kunye namandla, ukunciphisa kakhulu iindleko zokugcinwa, ukunciphisa ixesha lokunciphisa, kunye nokuphucula ukusebenza kakuhle kwezixhobo kunye nokhuseleko.

I-SiC Ceramic Plates emfutshane

I-Silicon Carbide (SiC) iipleyiti zeceramic zaziwa ngobunzima bazo obukhethekileyo (ubunzima beMohs ukuya kuthi ga kwi-9.5, okwesibini kuphela kwidayimane), ukuhanjiswa kwe-thermal okugqwesileyo (igqithise kakhulu i-ceramics yolawulo olululo lobushushu), kunye nokungagungqi kweekhemikhali kunye nokuxhathisa ukothuka kwe-thermal (ukumelana neeasidi ezinamandla, i-alkali ye-alkali yobushushu). Ezi zakhiwo ziqinisekisa ukuzinza kwesakhiwo kunye nokusebenza okuthembekileyo kwiindawo ezigqithiseleyo (umzekelo, ubushushu obuphezulu, i-abrasion, kunye ne-corrosion), ngelixa ukwandisa ubomi benkonzo kunye nokunciphisa iimfuno zokugcina.

Iipleyiti ze-ceramic ze-SiC zisetyenziswa ngokubanzi kwiindawo eziphezulu zokusebenza:

•IiAbrasives kunye neZixhobo zokuSila: Ukusebenzisa ubulukhuni obuphezulu kakhulu bokwenza amavili okusila kunye nezixhobo zokupholisha, ukuqinisa ukuchaneka kunye nokuqina kwiindawo ezirhawuzelayo.

• Izinto eziNxibelelanayo: Ukusebenza njengeziko lomlilo kunye namalungu e-ontini, ukugcina uzinzo olungaphezu kwe-1600°C ukuphucula ukusebenza kakuhle kwe-thermal nokunciphisa iindleko zokulondoloza.

•Ishishini leSemiconductor: Lisebenza njengee substrates zezixhobo zombane ezinamandla aphezulu (umz., iidiode zamandla kunye nee-amplifiers zeRF), ezixhasa ukusebenza kombane ophezulu kunye nobushushu obuphezulu ukomeleza ukuthembeka nokusebenza kakuhle kwamandla.

•I-Casting and Smelting: Ukutshintsha imathiriyeli yemveli ekusetyenzweni kwesinyithi ukuqinisekisa ukuhanjiswa kobushushu okusebenzayo kunye nokuxhathisa ukutyiwa kweekhemikhali, ukuphucula umgangatho wesinyithi kunye nokusebenza kakuhle kweendleko.

SiC Wafer Boat Abstract

Izikhephe ze-ceramic ze-XKH SiC zihambisa uzinzo oluphezulu lwe-thermal, ukunganyaniseki kweekhemikhali, ubunjineli obuchanekileyo, kunye nokusebenza kakuhle kwezoqoqosho, ukubonelela ngesisombululo esisebenza ngokuphezulu sokwenza i-semiconductor. Baluphucula kakhulu ukhuseleko lokuphatha i-wafer, ucoceko, kunye nokusebenza kakuhle kwemveliso, bebenza ukuba babe zizinto eziyimfuneko kwimveliso ye-wafer ephezulu.

Iinqanawa ze-ceramic zeSiC Iimpawu zeempawu:

•Uzinzo lweThermal oluKhethekileyo kunye namandla oomatshini: Yenziwe kwi-silicon carbide (SiC) ceramic, iyamelana namaqondo obushushu angaphezulu kwe-1600°C, ngelixa igcina imfezeko yesakhiwo phantsi kwebhayisekile eshushu eshushu. I-coefficient yayo yokwandisa i-thermal ephantsi inciphisa i-deformation kunye nokuqhekeka, iqinisekisa ukuchaneka kunye nokhuseleko lwe-wafer ngexesha lokuphatha.

•Ubunyulu obuPhezulu kunye noKuxhathisa kwiMichiza: Yenziwe nge-SiC ephezulu-yobunyulu obuphezulu, ibonisa ukuxhathisa olomeleleyo kwiiasidi, iialkali, kunye neeplasma ezonakalisayo. Umphezulu ongasebenziyo unqanda ungcoliseko kunye nokuvuza kwe-ion, ukukhusela ukucoceka kwe-wafer kunye nokuphucula isivuno sesixhobo.

•UbuNjineli obuchanekileyo kunye noLungiselelo: Yenziwe phantsi konyamezelo olungqongqo ukuxhasa iisayizi ezahlukeneyo zewafer (umzekelo, i-100mm ukuya kwi-300mm), ibonelela ngokutyabeka okugqwesileyo, ubungakanani bobukhulu obufanayo, kunye nokhuseleko lomphetho. Uyilo olulungelelanisiweyo lulungelelanisa izixhobo ezizenzekelayo kunye neemfuno zesixhobo esithile.

• Ubomi obude kunye nokusebenza kakuhle kweendleko: Xa kuthelekiswa nemathiriyeli yemveli (umzekelo, iquartz, ialumina), i-SiC ceramic ibonelela ngamandla omatshini aphezulu, ukuqina koqhekeko, kunye nokumelana nokothuka kwe-thermal, ukwandisa kakhulu ubomi benkonzo, ukunciphisa ukuphindaphindeka kokutshintshwa, kunye nokuthoba ixabiso lilonke lobunini ngelixa uphucula imveliso.

Izicelo zeenqanawa ze-ceramic ze-SiC:

Izikhephe ze-ceramic ze-SiC zisetyenziswa ngokubanzi kwiinkqubo ze-semiconductor zangaphambili, kubandakanya:

•IiNkqubo zokuBeka: Ezinje nge-LPCVD (i-Low-Pressure Chemical Vapor Deposition) kunye ne-PECVD (i-Plasma-Enhanced Chemical Vapor Deposition).

• Unyango lobushushu obuphezulu: Kubandakanya i-thermal oxidation, i-annealing, i-diffusion, kunye nokufakelwa kwe-ion.

• Iinkqubo zokumanzisa nokuCoca: Ukucoca i-wafer kunye nezigaba zokuphatha iikhemikhali.

Iyahambelana nemekobume yenkqubo ye-atmospheric kunye ne-vacuum,

zilungele amalaphu afuna ukunciphisa umngcipheko wongcoliseko kunye nokuphucula ukusebenza kakuhle kwemveliso.

IiParameters zeSiC Wafer Boat:

Iimpawu zobuGcisa
Isalathiso	Iyunithi	Ixabiso
Igama leMathiriyeli		Ukusabela Sintered Silicon Carbide	Uxinzelelo lweSilicon Carbide engenaxinzelelo	Recrystallized Silicon Carbide
Ukuqamba		I-RBSiC	I-SSiC	R-SiC
Unizi lolwapho kuyiwa khona	g/cm3	3	3.15 ± 0.03	2.60-2,70
Amandla e-Flexural	MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100(1400°C)
Amandla acinezelayo	MPa (kpsi)	1120(158)	3970(560)	> 600
Ukuqina	Knoop	2700	2800	/
Ukuqhawula ukuqina	IMPa m1/2	4.5	4	/
I-Thermal Conductivity	W/mk	95	120	23
I-Coefficient yoKwandiswa kweThermal	10^-6.1/°C	5	4	4.7
Ubushushu obuthile	Joule/g 0k	0.8	0.67	/
Ubushushu obukhulu emoyeni	℃	1200	1500	1600
Imodyuli ye-elastic	I-Gpa	360	410	240

I-SiC Ceramics Ezahlukeneyo zeMixholo yeSiko lokuBonisa

I-SiC Ceramic Membrane

I-SiC i-membrane ye-ceramic sisisombululo esithuthukisiweyo sokucoca esenziwe kwi-silicon carbide ecocekileyo, enesakhiwo esinemigangatho emithathu eyomeleleyo (inkxaso yomaleko, i-transition layer, kunye ne-membrane yokwahlula) eyenziwe ngeenkqubo zokushisa eziphezulu zokushisa. Olu luyilo luqinisekisa amandla akhethekileyo omatshini, ukuhanjiswa kobungakanani bepore ngokuchanekileyo, kunye nokuqina okubalaseleyo. Igqwesa kwizicelo zemizi-mveliso eyahluka-hlukeneyo ngokwahlula kakuhle, ukugxininisa, kunye nokucoca ulwelo. Usetyenziso oluphambili lubandakanya ukucocwa kwamanzi kunye namanzi amdaka (ukususa izinto eziqinileyo ezinqunyanyisiweyo, iibhaktheriya, kunye nezingcolisi eziphilayo), ukulungiswa kokutya kunye nesiselo (ukucacisa kunye nokugxininiswa kwejusi, ubisi, kunye nolwelo oluvundisiweyo), imisebenzi yamachiza kunye ne-biotechnology (ukucoca i-biofluids kunye ne-intermediates), ukusetyenzwa kweekhemikhali (ukucoca ulwelo lwe-oyile kunye ne-oyile evelisayo ukususwa kongcoliseko).

Imibhobho yeSiC

Iityhubhu ze-SiC (i-silicon carbide) zizinto ze-ceramic ezisebenza kakhulu ezilungiselelwe iinkqubo zesithando somlilo se-semiconductor, zenziwe ukusuka kwi-silicon carbide ecocekileyo ecocekileyo ecocekileyo ngokusebenzisa ubuchule obuphambili bokucoca. Babonisa i-thermal conductivity ekhethekileyo, ukuzinza kobushushu obuphezulu (ukumelana ne-1600 ° C), kunye nokumelana nokubola kweekhemikhali. I-coefficient yabo yokwandisa i-thermal ephantsi kunye namandla aphezulu omatshini aqinisekisa ukuzinza kwe-dimensional phantsi kwebhayisikile eshushu kakhulu, ukunciphisa ngokufanelekileyo ukuguqulwa koxinzelelo lwe-thermal kunye nokunxiba. Iityhubhu ze-SiC zifanelekile kwiziko lokusasaza, ii-oxidation furnaces, kunye ne-LPCVD/PECVD iinkqubo, ezivumela ukuhanjiswa kobushushu obufanayo kunye neemeko ezizinzileyo zenkqubo yokunciphisa iziphene ze-wafer kunye nokuphucula i-homogeneity yefilimu encinci. Ukongezelela, i-dense, i-non-porous structure kunye ne-inertness yekhemikhali ye-SiC ixhathisa ukukhukuliseka kwiigesi ezisebenzayo ezifana ne-oksijeni, i-hydrogen, kunye ne-ammonia, ukwandisa ubomi benkonzo kunye nokuqinisekisa ukucoceka kwenkqubo. Iityhubhu ze-SiC zinokuthi zenziwe ngokwezifiso ngobukhulu kunye nobukhulu bodonga, ngokuchaneka komatshini okuphumeza imiphezulu yangaphakathi egudileyo kunye nokugxila okuphezulu ukuxhasa ukuhamba kwe-laminar kunye neeprofayili zobushushu ezilinganayo. Ukupholishwa komphezulu okanye ukhetho lokugquma luqhubela phambili ukunciphisa ukuveliswa kwamasuntswana kunye nokwandisa ukuxhathisa umhlwa, ukuhlangabezana neemfuno ezingqongqo zokwenziwa kwe-semiconductor ngokuchanekileyo kunye nokuthembeka.

ISiC Ceramic Cantilever Paddle

Uyilo lwe-monolithic lwe-SiC cantilever blades luphucula kakhulu ukuqina koomatshini kunye nokufana kwe-thermal ngelixa ususa amajoyina kunye namanqaku abuthathaka aqhelekileyo kwizinto ezidibeneyo. Umphezulu wabo uphuculwe ngokuchaneka ukuya kuthi ga kwisipili esikufutshane, unciphisa ukuveliswa kwezinto kunye nokuhlangabezana nemigangatho yokucoceka kwegumbi. I-inertia ye-chemical inertia ye-SiC ikhusela ukuphuma, ukubola, kunye nokungcoliswa kwenkqubo kwiindawo ezisebenzayo (umzekelo, i-oksijini, i-steam), ukuqinisekisa ukuzinza kunye nokuthembeka kwiinkqubo zokusasaza / i-oxidation. Ngaphandle kokuhamba ngebhayisekile ngokukhawuleza okushushu, i-SiC igcina imfezeko yolwakhiwo, yandisa ubomi benkonzo kunye nokunciphisa ixesha lolondolozo. Ubume obulula be-SiC buvumela ukuphendula ngokukhawuleza kwe-thermal, ukukhawuleza kwamazinga okufudumala / okupholisa kunye nokuphucula imveliso kunye nokusebenza kakuhle kwamandla. Ezi blades zifumaneka ngobungakanani obunokwenziwa ngokwezifiso (zihambelana ne-100mm ukuya kwi-300mm + ii-wafers) kwaye zilungelelanise noyilo olwahlukeneyo lwesithando somlilo, ukuhambisa ukusebenza okungaguqukiyo kuzo zombini iinkqubo ze-semiconductor zangaphambili kunye ne-back-end.

Intshayelelo yeAlumina Vacuum Chuck

I-Al₂O₃ i-vacuum chucks zizixhobo ezibalulekileyo kwimveliso ye-semiconductor, ukubonelela ngenkxaso ezinzileyo kunye nechanekileyo kwiinkqubo ezininzi:•Thinning: Ibonelela ngenkxaso efanayo ngexesha lokunqunyulwa kwewafer, iqinisekisa ukucuthwa kwesubstrate echanekileyo ephezulu ukunyusa ukuchithwa kobushushu bechip kunye nokusebenza kwesixhobo.
•Dicing: Ibonelela nge-adsorption ekhuselekileyo ngexesha le-wafer dicing, ukunciphisa iingozi zomonakalo kunye nokuqinisekisa ukusikeka okucocekileyo kweetshiphusi zomntu ngamnye.
•Ukucoca: Umphezulu wayo ogudileyo, ofanayo we-adsorption wenza ukuba kususwe ungcoliseko olusebenzayo ngaphandle kokonakalisa iiwafa ngexesha leenkqubo zokucoca.
•Ukuthutha: Ihambisa inkxaso ethembekileyo nekhuselekileyo ngexesha lokuphatha iwafer nothutho, ukunciphisa imingcipheko yomonakalo kunye nokungcoliseka.

I-Al₂O₃ Iimpawu eziphambili zeVacuum Chuck:

1.Uniform Micro-Porous Ceramic Technology
•Isebenzisa i-nano-powders ukwenza ii-pores ezisasazwa ngokulinganayo kunye nezidibeneyo, ezikhokelela kwi-porosity ephezulu kunye nesakhiwo esixineneyo esifanayo kunye nenkxaso ye-wafer ethembekileyo.

2. IiPropati zeMathiriyeli eziKhethekileyo
-Yenziwe kwi-99.99% ecocekileyo ye-alumina (Al₂O₃), ibonisa:
• IiPropathi zeThermal: Ukumelana nobushushu obuphezulu kunye ne-thermal conductivity egqwesileyo, ifanele indawo zobushushu obuphezulu be-semiconductor.
• IiPropati zoomatshini: Amandla aphezulu kunye nokuqina kuqinisekisa ukomelela, ukuxhathisa ukunxiba, kunye nobomi benkonzo ende.
•Izinto eziluncedo ezongezelelekileyo: Ukugqunywa kombane okuphezulu kunye nokuxhathisa umhlwa, ukulungelelaniswa neemeko ezahlukeneyo zokwenziwa.

3. Ukucaba okuPhakamileyo kunye nokuFana•Ukuqinisekisa ukuphathwa kwe-wafer echanekileyo kunye nozinzo kunye nomgangatho ophezulu kunye nokuhambelana, ukunciphisa umngcipheko womonakalo kunye nokuqinisekisa iziphumo zokusetyenzwa okungaguqukiyo. Ukungena komoya okulungileyo kunye namandla afanayo e-adsorption aphakamisa ngakumbi ukuthembeka kokusebenza.

I-Al₂O₃ i-vacuum chuck idibanisa itekhnoloji ye-micro-porous ephezulu, iipropathi zezinto ezibonakalayo, kunye nokuchaneka okuphezulu, ukuxhasa iinkqubo ezibaluleke kakhulu ze-semiconductor, ukuqinisekisa ukusebenza kakuhle, ukuthembeka, kunye nolawulo longcoliseko kuwo wonke amanqanaba okunciphisa, ukudayiva, ukucoca kunye nokuthutha.

IAlumina Robot Arm kunye neAlumina Ceramic End Effector Brief

Ialumina (Al₂O₃) iingalo zerobhothi zeceramic zizinto ezibalulekileyo zokuphatha iwafer kwimveliso yesemiconductor. Baqhagamshelana ngokuthe ngqo nama-wafers kwaye banoxanduva lokudluliselwa okuchanekileyo kunye nokubeka kwiindawo ezifunayo ezifana ne-vacuum okanye iimeko zobushushu obuphezulu. Ixabiso labo eliphambili lilele ekuqinisekiseni ukhuseleko lwe-wafer, ukuthintela usulelo, kunye nokuphucula ukusebenza kakuhle kwezixhobo kunye nesivuno ngokusebenzisa iipropathi zemathiriyeli ezikhethekileyo.

a-eqhelekileyo-isiqwengana-transfer-robot_230226_副本

Ubungakanani beFeature	Inkcazo eneenkcukacha
IiPropati zoomatshini	Ucoceko oluphezulu lwe-alumina (umzekelo,> 99%) lubonelela ngobulukhuni obuphezulu (ubulukhuni be-Mohs ukuya kuthi ga kwi-9) kunye namandla aguquguqukayo (ukuya kuthi ga kwi-250-500 MPa), iqinisekisa ukuxhathisa ukunxitywa kunye nokuphepha ukuguqulwa, ngaloo ndlela bandisa ubomi benkonzo.
I-Insulation yoMbane	Ukumelana nobushushu begumbi ukuya kuthi ga kwi-10¹⁵ Ω·cm kunye namandla okugquma we-15 kV/mm kuthintela ngokufanelekileyo ukukhutshwa kwe-electrostatic discharge (ESD), ukukhusela iiwafa ezinovakalelo kuphazamiseko nokonakala kombane.
Ukuzinza kweThermal	Indawo yokunyibilika ukuya kuthi ga kwi-2050 ° C, yenza ukuba umelane neenkqubo zobushushu obuphezulu (umzekelo, i-RTA, i-CVD) kwimveliso ye-semiconductor. I-coefficient yokwandisa i-thermal ephantsi inciphisa ukulwa kwaye igcina uzinzo lwe-dimensional phantsi kobushushu.
Ukungazinzi kweMichiza	Ukungangeni kwiiasidi ezininzi, iialkali, iigesi zenkqubo, kunye neearhente zokucoca, ukuthintela ukungcoliseka kwamasuntswana okanye ukukhutshwa kwe-ion yesinyithi. Oku kuqinisekisa imeko yemveliso ecocekileyo kakhulu kwaye inqanda ukungcoliseka komphezulu we-wafer.
Ezinye izinto eziluncedo	Itekhnoloji yokucubungula abantu abadala ibonelela ngeendleko eziphezulu; imiphezulu ingagudiswa ngokuchaneka ukuya kuburhabaxa obuphantsi, icuthe ngakumbi imingcipheko yokuvelisa amasuntswana.

Iingalo zerobhothi ze-alumina zeceramic zisetyenziswa ikakhulu kwinkqubo yokwenziwa kwe-semiconductor yangaphambili, kubandakanya:

•Ukuphatha iWafer kunye neNdawo : Ukudluliselwa ngokukhuselekileyo nangokuchaneka kunye nokubeka iiwafers (umzekelo, i-100mm ukuya kwi-300mm+ ubukhulu) kwindawo ye-vacuum okanye ukucoceka okuphezulu kwegesi engasebenziyo, ukunciphisa umonakalo kunye nemingcipheko yongcoliseko.

•IiNkqubo zobushushu obuphezulu: Ezinje nge-raid thermal annealing (RTA), chemical vapor deposition (CVD), kunye neplasma etching, apho zigcina uzinzo phantsi kwamaqondo obushushu aphezulu, ziqinisekisa inkqubo yokungaguquguquki kunye nesivuno.

• Iinkqubo zokuPhathwa kwe-wafer ezizihambelayo: Idityaniswe kwiirobhothi zokuphatha njenge-wafer njengeempembelelo zokugqibela, ukwenza ukuhanjiswa kwe-wafer ngokuzenzekelayo phakathi kwesixhobo, kuphuculwe ukusebenza kakuhle kwemveliso.

Ukuqukumbela

I-XKH igxile kwi-R & D kunye nokuveliswa kwe-silicon carbide (SiC) kunye ne-alumina (Al₂O₃) i-ceramic components, kuquka iingalo ze-robotic, i-cantilever paddles, i-vacuum chucks, izikebhe ezinqabileyo, iityhubhu zomlilo, kunye nezinye iindawo eziphezulu zokusebenza, ukukhonza i-semiconductors, amandla amatsha, i-aerospace, kunye ne-ist-aerospace. Sibambelela kwimveliso echanekileyo, ulawulo olungqongqo lomgangatho, kunye nokwenziwa ngokutsha kwetekhnoloji, ukuxhasa iinkqubo zodidi oluphezulu (umzekelo, ukucofa okucokisekileyo, ukucofa ukusabela) kunye neendlela ezichanekileyo zokucoca (umzekelo, ukucola i-CNC, ukugulisa) ukuqinisekisa ukumelana nobushushu obuphezulu, amandla oomatshini, ukunganyaniseki kweekhemikhali, kunye nokuchaneka komgangatho. Sixhasa ulungelelwaniso olusekwe kwimizobo, ibonelela ngezisombululo ezilungiselelwe ubungakanani, iimilo, ukugqitywa komphezulu kunye namabakala ezinto eziphathekayo ukuhlangabezana neemfuno ezithile zabathengi. Sizibophelele ekuboneleleni ngezinto ezithembekileyo nezisebenzayo ze-ceramic kwimveliso ephezulu yehlabathi, ukuphucula ukusebenza kwezixhobo kunye nokusebenza kakuhle kwemveliso kubathengi bethu.

Ngaphambili: Idayimani yocingo lweMininzi yocingo oluPhezulu-Isantya esiphezulu-Ukuchaneka ezantsi umatshini wokusika ujingi

Okulandelayo: ISemi-Insulating Silicon Carbide (SiC) Substrate High-Purity yeAr Glasses