Iindaba zeshishini
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Ukusika iLaser kuya kuba yeyona teknoloji iphambili yokusika i-8-intshi yesilicon carbide kwixesha elizayo. Q&A Ingqokelela
Q: Zeziphi iitekhnoloji eziphambili ezisetyenziswa kwi-SiC wafer slicing kunye nokusetyenzwa? A:I-Silicon carbide (SiC) inobulukhuni okwesibini kuphela kwidayimani kwaye ithathwa njengento enzima kakhulu kunye ne-brittle. Inkqubo yokusika, ebandakanya ukusika iikristale ezikhulileyo zibe zii-wafers ezibhityileyo, kudla ixesha kwaye kulula ...Funda ngokugqithisileyo -
Ubume bangoku kunye neeNdlela ze-SiC Wafer Processing Technology
Njengesixhobo se-semiconductor substrate yesizukulwana sesithathu, i-silicon carbide (i-SiC) ikristale enye inethuba elibanzi lokusetyenziswa kwimveliso ye-high-frequency kunye ne-high-power-electronic devices. Itekhnoloji yokucubungula ye-SiC idlala indima eqinisekileyo kwimveliso ye-substrate ekumgangatho ophezulu...Funda ngokugqithisileyo -
Inkwenkwezi ekhulayo ye-semiconductor yesizukulwana sesithathu: I-Gallium nitride iindawo ezininzi ezintsha zokukhula kwixesha elizayo
Xa kuthelekiswa nezixhobo ze-silicon carbide, izixhobo zamandla ze-gallium nitride ziya kuba neenzuzo ezininzi kwiimeko apho ukusebenza kakuhle, ukuphindaphinda, umthamo kunye neminye imiba ebanzi ifunwa ngaxeshanye, njengezixhobo ezisekelwe kwi-gallium nitride...Funda ngokugqithisileyo -
Uphuhliso loshishino lwasekhaya lwe-GaN luye lwakhawuleziswa
I-Gallium nitride (i-GaN) yokwamkelwa kwesixhobo samandla ikhula ngokumangalisayo, ikhokelwa ngabathengisi be-elektroniki baseTshayina, kwaye imarike yamandla e-GaN izixhobo kulindeleke ukuba ifikelele kwi-2 yeebhiliyoni zeedola ngo-2027, ukusuka kwi-126 yezigidi zeedola ngo-2021. Okwangoku, icandelo le-electronics yabathengi ngumqhubi oyintloko we-gallium ni...Funda ngokugqithisileyo