Iindaba zeShishini
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Ukuqonda iiWafers zeSiC zeSemi-Insulation vs. N-Type kwizicelo zeRF
I-silicon carbide (i-SiC) ivele njengesixhobo esibalulekileyo kwi-elektroniki yanamhlanje, ngakumbi kwizicelo ezibandakanya amandla aphezulu, amaza aphezulu, kunye neendawo ezinobushushu obuphezulu. Iimpawu zayo eziphezulu—ezifana ne-wide bandgap, i-thermal conductivity ephezulu, kunye ne-high breakdown voltage—zenza i-SiC ibe yi-ide...Funda ngokugqithisileyo -
Indlela Yokuphucula Ixabiso Lakho Lokuthenga IiWafers ZeSilicon Carbide Ezikumgangatho Ophezulu
Kutheni iiWafer zeSilicon Carbide Zibonakala Zibiza Kakhulu—kwaye Kutheni Loo Mbono Ungaphelelanga Iiwafer zeSilicon carbide (SiC) zihlala zibonwa njengezixhobo ezibiza kakhulu kwimveliso ye-semiconductor enamandla. Nangona olu luvo lungasekelwanga ngokupheleleyo, aluphelelanga. Umngeni wokwenene asikokuba ...Funda ngokugqithisileyo -
Singayinciphisa njani i-wafer ibe “ncinci kakhulu”?
Singayinciphisa njani i-wafer ibe “ncinci kakhulu”? Yintoni kanye kanye i-wafer encinci kakhulu? Ububanzi obuqhelekileyo bobukhulu (ii-wafers eziyi-8″/12″ njengemizekelo) I-wafer eqhelekileyo: 600–775 μm I-wafer encinci: 150–200 μm I-wafer encinci kakhulu: ngaphantsi kwe-100 μm I-wafer encinci kakhulu: 50 μm, 30 μm, okanye ne-10–20 μm Kutheni...Funda ngokugqithisileyo -
Indlela iSiC kunye neGaN eziguqula ngayo ukuPakishwa kweMicimbi yeMini
Ishishini le-power semiconductor litshintsha ngendlela eguqukayo ngenxa yokwamkelwa ngokukhawuleza kwezinto ze-wide-bandgap (WBG). I-Silicon Carbide (SiC) kunye ne-Gallium Nitride (GaN) ziphambili kolu tshintsho, zivumela izixhobo zamandla zesizukulwana esilandelayo ukuba zisebenze kakuhle kwaye zitshintshe ngokukhawuleza...Funda ngokugqithisileyo -
IFOUP Akukho kunye neFomu epheleleyo yeFOUP: Isikhokelo esipheleleyo seeNjineli zeSemiconductor
I-FOUP imele i-Front-Opening Unified Pod, isikhongozeli esisemgangathweni esisetyenziswa kwimveliso ye-semiconductor yanamhlanje ukuthutha nokugcina ii-wafers ngokukhuselekileyo. Njengoko ubungakanani bee-wafer busanda, kwaye iinkqubo zokwenza izinto ziye zaba buthathaka ngakumbi, ukugcina indawo ecocekileyo nelawulwayo yee-wafers kuye...Funda ngokugqithisileyo -
Ukusuka kwiSilicon ukuya kwiSilicon Carbide: Indlela Izinto Ezisebenzisa Ubushushu Obuphezulu Eziyichaza Ngayo I-Chip Packaging
I-Silicon ibisoloko isisiseko setekhnoloji ye-semiconductor. Nangona kunjalo, njengoko uxinano lwe-transistor lusanda kwaye iiprosesa zanamhlanje kunye neemodyuli zamandla zivelisa uxinano lwamandla oluphezulu, izixhobo ezisekwe kwi-silicon zijongene nemida ebalulekileyo ekulawuleni ubushushu kunye nokuzinza koomatshini. I-Silicon c...Funda ngokugqithisileyo -
Kutheni iiWafers zeSiC ezicocekileyo kakhulu zibalulekile kwi-Elektroniki zamandla zesizukulwana esilandelayo
1. Ukusuka kwiSilicon ukuya kwiSilicon Carbide: Utshintsho lweParadigm kwiPower Electronics Kangangeminyaka engaphezu kwesiqingatha senkulungwane, isilicon ibingumqolo wepower electronics. Nangona kunjalo, njengoko izithuthi zombane, iinkqubo zamandla ahlaziyekayo, amaziko edatha e-AI, kunye namaqonga eenqwelo-moya etyhalela phambili kwiivolthi eziphezulu, ubushushu obuphezulu...Funda ngokugqithisileyo -
Umahluko Phakathi kwe-4H-SiC kunye ne-6H-SiC: Yeyiphi i-substrate efunekayo kwiprojekthi yakho?
I-silicon carbide (i-SiC) ayiseyiyo nje i-semiconductor ekhethekileyo. Iipropati zayo ezibalaseleyo zombane kunye nobushushu zenza ukuba ibaluleke kakhulu kwizixhobo zombane zesizukulwana esilandelayo, ii-EV inverters, izixhobo ze-RF, kunye nokusetyenziswa kwe-high-frequency. Phakathi kwee-polytypes ze-SiC, i-4H-SiC kunye ne-6H-SiC zilawula imarike—kodwa...Funda ngokugqithisileyo -
Yintoni Eyenza I-Sapphire Substrate Esemgangathweni Ophezulu Kwizicelo Ze-Semiconductor?
Intshayelelo Ii-substrates zesafire zidlala indima ebalulekileyo kwimveliso ye-semiconductor yanamhlanje, ngakumbi kwi-optoelectronics kunye nezicelo zesixhobo se-wide-bandgap. Njengendlela enye yekristale ye-aluminium oxide (Al₂O₃), isafire inika indibaniselwano eyahlukileyo yobunzima boomatshini, uzinzo lobushushu...Funda ngokugqithisileyo -
I-Silicon Carbide Epitaxy: Imigaqo yeNkqubo, Ulawulo lokuThinteka, kunye nemingeni yeziphene
I-silicon carbide (SiC) epitaxy isembindini wenguqu yamandla e-elektroniki yanamhlanje. Ukusuka kwizithuthi zombane ukuya kwiinkqubo zamandla avuselelekayo kunye nee-industrial drives ezine-voltage ephezulu, ukusebenza kunye nokuthembeka kwezixhobo ze-SiC kuxhomekeke kancinci kuyilo lwesekethe kunokuba kuxhomekeke kwinto eyenzekayo ngexesha le-microme ezimbalwa...Funda ngokugqithisileyo -
Ukusuka kwi-Substrate ukuya kwi-Power Converter: Indima ebalulekileyo yeSilicon Carbide kwiiNkqubo zamandla eziPhambili
Kwizixhobo ze-elektroniki zanamhlanje, isiseko sesixhobo sihlala simisela amandla enkqubo yonke. Ii-substrates ze-silicon carbide (SiC) ziye zavela njengezinto eziguqulayo, zivumela isizukulwana esitsha seenkqubo zamandla ezine-voltage ephezulu, i-frequency ephezulu, kunye nezonga amandla. Ukusuka kwi-athomu...Funda ngokugqithisileyo -
Amandla okukhula kweSilicon Carbide kwiTekhnoloji eziKhulayo
I-Silicon carbide (i-SiC) sisixhobo se-semiconductor esiphucukileyo esiye savela kancinci kancinci njengenxalenye ebalulekileyo kuphuhliso lwetekhnoloji yanamhlanje. Iimpawu zayo ezikhethekileyo—ezifana nokuqhuba okuphezulu kobushushu, i-voltage ephezulu yokuqhekeka, kunye nokukwazi ukuphatha amandla aphezulu—zenza ukuba ibe yinto ekhethwayo...Funda ngokugqithisileyo