Ukukhulisa umaleko owongezelelweyo weeathom ze-silicon kwi-substrate ye-silicon wafer kuneenzuzo ezininzi:
Kwiinkqubo ze-silicon ze-CMOS, ukukhula kwe-epitaxial (EPI) kwi-substrate ye-wafer linyathelo elibalulekileyo lenkqubo.
1. Ukuphucula umgangatho wekristale
Iziphene zokuqala kunye nokungcola kwe-substrate: Ngexesha lenkqubo yokuvelisa, i-wafer substrate inokuba neziphene ezithile kunye nokungcola. Ukukhula kwe-epitaxial layer kunokuvelisa i-monocrystalline silicon layer ekumgangatho ophezulu enezinga eliphantsi leziphene kunye nokungcola kwi-substrate, nto leyo ibalulekileyo ekwenziweni kwesixhobo okulandelayo.
Ulwakhiwo lwekristale olufanayo: Ukukhula kwe-Epitaxial kuqinisekisa ulwakhiwo lwekristale olufanayo ngakumbi, kunciphisa impembelelo yemida yeenkozo kunye neziphene kwizinto ezingaphantsi komhlaba, ngaloo ndlela kuphucula umgangatho wekristale iyonke we-wafer.
2, ukuphucula ukusebenza kombane.
Ukuphucula iimpawu zesixhobo: Ngokukhulisa umaleko we-epitaxial kwi-substrate, uxinaniso lwe-doping kunye nohlobo lwe-silicon lunokulawulwa ngokuchanekileyo, luphucule ukusebenza kombane kwesixhobo. Umzekelo, i-doping yomaleko we-epitaxial inokulungiswa kakuhle ukulawula i-threshold voltage ye-MOSFET kunye nezinye iiparameter zombane.
Ukunciphisa umsinga wokuvuza: Umaleko we-epitaxial osemgangathweni ophezulu unobunzima obuphantsi, nto leyo enceda ekunciphiseni umsinga wokuvuza kwizixhobo, ngaloo ndlela iphucula ukusebenza kwesixhobo kunye nokuthembeka kwaso.
3, ukuphucula ukusebenza kombane.
Ukunciphisa Ubungakanani Beempawu: Kwii-nodes ezincinci zenkqubo (ezifana ne-7nm, 5nm), ubungakanani beempawu zezixhobo buyaqhubeka nokuncipha, zifuna izixhobo ezicociweyo nezisemgangathweni ophezulu. Itekhnoloji yokukhula kwe-Epitaxial inokuhlangabezana nezi mfuno, ixhase ukuveliswa kweesekethe ezidibeneyo ezisebenzayo nezixineneyo.
Ukuphucula iVolthi yokuqhekeka: Iileya ze-Epitaxial zinokuyilwa ngee-voltage eziphezulu zokuqhekeka, nto leyo ibalulekileyo ekwenzeni izixhobo ezinamandla aphezulu kunye nee-voltage eziphezulu. Umzekelo, kwizixhobo zamandla, iileya ze-epitaxial zinokuphucula i-voltage yokuqhekeka kwesixhobo, zinyuse uluhlu olukhuselekileyo lokusebenza.
4, Ukuhambelana kweNkqubo kunye neZakhiwo zeMigca emininzi
Izakhiwo zeZilayi Ezininzi: Itekhnoloji yokukhula kwe-Epitaxial ivumela ukukhula kwezakhiwo zeZilayi Ezininzi kwiziseko, kunye neeleya ezahlukeneyo ezinomlinganiselo owahlukeneyo we-doping kunye neentlobo. Oku kuluncedo kakhulu ekwenzeni izixhobo ze-CMOS ezintsonkothileyo kunye nokuvumela ukuhlanganiswa kwemilinganiselo emithathu.
Ukuhambelana: Inkqubo yokukhula kwe-epitaxial ihambelana kakhulu neenkqubo zokwenziwa kwe-CMOS ezikhoyo, okwenza kube lula ukuhlanganisa kwimisebenzi yokwenziwa kwemveliso yangoku ngaphandle kwesidingo sotshintsho olukhulu kwimigca yenkqubo.
Isishwankathelo: Ukusetyenziswa kokukhula kwe-epitaxial kwiinkqubo ze-silicon ze-CMOS kujolise ikakhulu ekuphuculeni umgangatho wekristale ye-wafer, ukuphucula ukusebenza kombane wesixhobo, ukuxhasa ii-process nodes eziphambili, kunye nokuhlangabezana neemfuno zokwenziwa kweesekethe ezidibeneyo ezisebenzayo nezixineneyo. Itekhnoloji yokukhula kwe-Epitaxial ivumela ulawulo oluchanekileyo lokusetyenziswa kwezixhobo kunye nolwakhiwo, ukuphucula ukusebenza ngokubanzi kunye nokuthembeka kwezixhobo.
Ixesha leposi: Oktobha-16-2024