Ukukhulisa umaleko owongezelelweyo we-athomu ye-silicon kwi-silicon wafer substrate ineenzuzo ezininzi:
Kwiinkqubo ze-silicon ze-CMOS, ukukhula kwe-epitaxial (EPI) kwi-wafer substrate linyathelo elibalulekileyo lenkqubo.
1, Ukuphucula umgangatho wekristale
Iziphene zokuqala ze-substrate kunye nokungcola: Ngexesha lenkqubo yokuvelisa, i-wafer substrate ingaba neziphene ezithile kunye nokungcola. Ukukhula komgangatho we-epitaxial kunokuvelisa umgangatho ophezulu we-monocrystalline umaleko we-silicon kunye nokugxininiswa okuphantsi kweziphene kunye nokungcola kwi-substrate, ebalulekileyo kwimveliso yesixhobo esilandelayo.
Ubume bekristale obufanayo: Ukukhula kwe-Epitaxial kuqinisekisa ubume obufanayo bekristale, ukunciphisa impembelelo yemida yengqolowa kunye neziphene kwi-substrate material, ngaloo ndlela kuphuculwe umgangatho we-crystal jikelele we-wafer.
2,ukuphucula ukusebenza kombane.
Ukuphucula iimpawu zesixhobo: Ngokukhulisa i-epitaxial layer kwi-substrate, i-doping concentration kunye nohlobo lwe-silicon inokulawulwa ngokuchanekileyo, ukuphucula ukusebenza kombane kwesixhobo. Ngokomzekelo, i-doping ye-epitaxial layer inokulungelelaniswa kakuhle ukulawula i-voltage threshold ye-MOSFETs kunye nezinye iiparamitha zombane.
Ukunciphisa ukuvuza kwangoku: Umgangatho ophezulu we-epitaxial layer ine-defect density ephantsi, enceda ukunciphisa ukuvuza kwangoku kwizixhobo, ngaloo ndlela iphucula ukusebenza kwesixhobo kunye nokuthembeka.
3,ukuphucula ukusebenza kombane.
Ukunciphisa ubungakanani beFeature: Kwiindawo ezincinci zenkqubo (ezifana ne-7nm, i-5nm), ubukhulu besixhobo buyaqhubeka nokuncipha, kufuna izinto ezisulungekileyo nezikumgangatho ophezulu. Itekhnoloji yokukhula kwe-Epitaxial inokuhlangabezana nezi mfuno, ixhasa ukuveliswa kokusebenza okuphezulu kunye neesekethe ezidibeneyo ezidibeneyo.
Ukuphucula i-Voltage ye-Breakdown: I-Epitaxial layers inokuyilwa kunye ne-voltages ephezulu yokuphuka, ebaluleke kakhulu ekwenzeni izixhobo zamandla aphezulu kunye ne-high-voltage. Ngokomzekelo, kwizixhobo zamandla, i-epitaxial layers inokuphucula i-voltage yokuchithwa kwesixhobo, ukwandisa uluhlu olukhuselekileyo lokusebenza.
I-4, Ukuhambelana kweNkqubo kunye neZakhiwo ezininzi
I-Multilayer Structures: Itekhnoloji yokukhula kwe-Epitaxial ivumela ukukhula kwezakhiwo ezininzi kwii-substrates, ezinomaleko ohlukeneyo ohlukeneyo kunye neentlobo ze-doping. Oku kuluncedo kakhulu ekwenzeni izixhobo ze-CMOS ezintsonkothileyo kunye nokwenza ukuba kudityaniswe imida emithathu.
Ukuhambelana: Inkqubo yokukhula kwe-epitaxial ihambelana kakhulu neenkqubo ezikhoyo zokuvelisa i-CMOS, okwenza kube lula ukudibanisa kwi-workflows yangoku yokuvelisa ngaphandle kwesidingo sokuguqulwa okubalulekileyo kwimigca yenkqubo.
Isishwankathelo: Ukusetyenziswa kokukhula kwe-epitaxial kwiinkqubo ze-silicon ye-CMOS ngokuyinhloko kujolise ekuphuculeni umgangatho we-crystal wafer, ukwandisa ukusebenza kombane wesixhobo, ukuxhasa iindawo eziphambili zenkqubo, kunye nokuhlangabezana neemfuno zokwenza umsebenzi ophezulu kunye noxinzelelo oluphezulu lwesekethe edibeneyo yokuvelisa. I-teknoloji yokukhula kwe-Epitaxial ivumela ulawulo oluchanekileyo lwe-doping yezinto eziphathekayo kunye nesakhiwo, ukuphucula ukusebenza ngokubanzi kunye nokuthembeka kwezixhobo.
Ixesha lokuposa: Oct-16-2024