Iinzuzo zeNgeglasi nge-(TGV)kunye ne-Silicon Via(TSV) iinkqubo ngaphezulu kwe-TGV ikakhulu:
(1) iimpawu zombane ezibalaseleyo. Izinto zeglasi yimathiriyeli ye-insulator, i-dielectric engaguqukiyo imalunga ne-1/3 kuphela yezinto ze-silicon, kwaye ilahleko yi-2-3 yee-odolo zobukhulu obuphantsi kune-silicon, eyenza ilahleko ye-substrate kunye nemiphumo ye-parasitic iyancipha kakhulu. kwaye iqinisekisa ukuthembeka komqondiso ogqithisiweyo;
(2)ubukhulu obukhulu kunye ne-ultra-thin glass substratekulula ukuyifumana. I-Corning, i-Asahi kunye ne-SCHOTT kunye nabanye abavelisi beglasi banokubonelela nge-ultra-enkulu ubukhulu (> 2m × 2m) kunye ne-ultra-thin (<50µm) yeglasi yeglasi kunye ne-ultra-thin flexible glass materials.
3) Iindleko eziphantsi. Inzuzo ekufikeleleni ngokulula kwiglasi yepaneli ye-ultra-thin enkulu, kwaye ayifuni ukubekwa kwe-insulating layers, iindleko zokuvelisa i-glass adapter plate kuphela malunga ne-1/8 ye-silicon-based adapter plate;
4) Inkqubo elula. Akukho mfuneko yokubeka i-insulating layer kwi-substrate surface kunye nodonga lwangaphakathi lwe-TGV, kwaye akukho mfuneko yokunciphisa kwi-adapter plate ye-ultra-thin;
(5) Ukuzinza okuqinileyo komatshini. Nokuba ubukhulu bepleyiti yeadaptha bungaphantsi kwe-100µm, iphepha lokulwa lisencinci;
(6) Uluhlu olubanzi lwezicelo, bubuchwephesha obuvelayo bokuqhagamshelwa kwelongitudinal olusetyenziswa kwibala lokupakishwa kwenqanaba le-wafer, ukufezekisa owona mgama umfutshane phakathi kwe-wafer-wafer, i-pitch encinci ye-interconnect inikeza indlela entsha yobuchwepheshe, kunye nombane obalaseleyo. , i-thermal, i-mechanical properties, kwi-chip ye-RF, i-MEMS i-high-end sensors, i-high-density system integration kunye nezinye iindawo ezineenzuzo ezizodwa, sisizukulwana esilandelayo I-5G, i-6G i-chip ye-high-frequency chip 3D Yenye yeendlela zokuqala zokukhetha ukupakishwa kwe-3D yesizukulwana esilandelayo se-5G kunye ne-6G ye-high-frequency chips.
Inkqubo yokubumba ye-TGV ikakhulu ibandakanya i-sandblasting, i-ultrasonic drilling, i-etching emanzi, i-ion etching esebenzayo, i-photosensitive etching, i-laser etching, i-laser-induced deep etching, kunye nokugxininisa ukubunjwa komngxuma wokukhupha.
Uphando lwakutsha nje kunye neziphumo zophuhliso zibonisa ukuba itekhnoloji inokulungiselela ngemingxunya kunye ne-5: imingxuma eyi-1 eyimfama enobunzulu ukuya kobubanzi be-20: 1, kwaye ibe ne-morphology elungileyo. I-laser eyenzelwe ubunzulu obunzulu, obukhokelela kuburhabaxa obuncinci bomphezulu, yeyona ndlela ifundwayo ngoku. Njengoko kubonisiwe kuMzobo woku-1, kukho iintanda ezicacileyo ezijikeleze ukomba lwelaser eqhelekileyo, ngelixa iindonga ezijikelezileyo kunye nezisecaleni ze-laser-induced etching deep zicocekile kwaye zigudile.
Inkqubo yokusebenza yeTGVi-interposer iboniswe kuMfanekiso 2. Inkqubo iyonke kukugrumba imingxuma kwi-substrate yeglasi kuqala, kwaye emva koko ufake i-barrier layer kunye nomaleko wembewu kudonga olusecaleni kunye nomphezulu. Umaleko wesithintelo uthintela ukusasazwa kweCu kwi-substrate yeglasi, ngelixa ukwandisa ukunamathela kwezi zibini, ngokuqinisekileyo, kwezinye izifundo nazo zafumanisa ukuba umqobo womqobo awuyimfuneko. Emva koko i-Cu ifakwe nge-electroplating, emva koko i-annealed, kwaye i-Cu layer isuswe yi-CMP. Ekugqibeleni, i-RDL rewiring layer ilungiselelwe yi-PVD yokugqoka i-lithography, kwaye i-passivation layer yenziwa emva kokuba iglue isusiwe.
(a) Ukulungiswa kwewafer, (b) ukubunjwa kwe-TGV, (c) i-electroplating enamacala amabini - ukubekwa kobhedu, (d) ukupholishwa kweekhemikhali kunye ne-CMP, ukususwa komgangatho wobhedu ongaphezulu, (e) Ukwaleka kwe-PVD kunye ne-lithography , (f) ukubekwa kwe-RDL rewiring layer, (g) i-degluing kunye ne-Cu/Ti etching, (h) ukubunjwa kwe-passivation layer.
Ukushwankathela,iglasi emngxunyeni (TGV)amathuba ezicelo abanzi, kwaye imarike yasekhaya yangoku ikwinqanaba elikhulayo, ukusuka kwisixhobo ukuya kuyilo lwemveliso kunye nophando kunye nenqanaba lokukhula liphezulu kunomndilili wehlabathi.
Ukuba kukho ulwaphulo-mthetho, cima uqhagamshelwano
Ixesha lokuposa: Jul-16-2024