Itekhnoloji yokucoca iiWafer kwiMveliso yeeSemiconductor

Itekhnoloji yokucoca iiWafer kwiMveliso yeeSemiconductor

Ukucocwa kwe-wafer linyathelo elibalulekileyo kuyo yonke inkqubo yokwenziwa kwe-semiconductor kwaye yenye yezona zinto ziphambili ezichaphazela ngokuthe ngqo ukusebenza kwesixhobo kunye nemveliso. Ngexesha lokwenziwa kweetships, nokuba kungcoliseka okuncinci kunokonakalisa iimpawu zesixhobo okanye kubangele ukungasebenzi ngokupheleleyo. Ngenxa yoko, iinkqubo zokucoca zisetyenziswa ngaphambi nasemva kwenyathelo ngalinye lokuvelisa ukususa ungcoliseko lomphezulu kunye nokuqinisekisa ukucoceka kwe-wafer. Ukucocwa kukwayeyona nto ixhaphakileyo kwimveliso ye-semiconductor, kubalwa malungaAma-30% azo zonke iindlela zenkqubo.

Ngokukhula okuqhubekayo kokuhlanganiswa okukhulu kakhulu (VLSI), ii-process nodes ziye zaphucuka zaya kwi28 nm, 14 nm, nangaphezulu, okuqhuba uxinano lwezixhobo eziphezulu, ububanzi bemigca emincinci, kunye nokuhamba kweenkqubo okuntsonkothileyo ngakumbi. Ama-node aphucukileyo achaphazeleka kakhulu kungcoliseko, ngelixa ubungakanani beempawu ezincinci benza ukucoca kube nzima ngakumbi. Ngenxa yoko, inani lamanyathelo okucoca liyaqhubeka nokunyuka, kwaye ukucoca kuye kwaba nzima ngakumbi, kubaluleke ngakumbi, kwaye kunzima ngakumbi. Umzekelo, itshiphu ye-90 nm idla ngokufuna malungaAmanyathelo okucoca angama-90, ngelixa itshiphu ye-20 nm ifuna malungaAmanyathelo okucoca angama-215Njengoko ukwenziwa kwezinto kuqhubeka ukuya kwi-14 nm, 10 nm, kunye namaqhuqhuva amancinci, inani lemisebenzi yokucoca liya kuqhubeka lisanda.

Kwimeko,Ukucoca i-wafer kubhekisa kwiinkqubo ezisebenzisa unyango lweekhemikhali, iigesi, okanye iindlela ezibonakalayo ukususa ukungcola kumphezulu we-waferIzinto ezingcolisayo ezifana namasuntswana, iintsimbi, iintsalela zezinto eziphilayo, kunye nee-oxides zendalo zonke zinokuchaphazela kakubi ukusebenza kwesixhobo, ukuthembeka, kunye nokukhupha. Ukucoca kusebenza njengebhulorho phakathi kwamanyathelo okwenziwa alandelelanayo—umzekelo, ngaphambi kokufakwa kunye ne-lithography, okanye emva kokugrumba, i-CMP (i-chemical mechanical polishing), kunye nokufakelwa kwee-ion. Ngokubanzi, ukucoca i-wafer kunokwahlulwahlulwa ngokwezigaba:ukucoca okumanzikwayeicocwa ngokomisa.

Ukucoca ngamanzi

Ukucoca ngamanzi kusebenzisa izinyibilikisi zeekhemikhali okanye amanzi acocekileyo (DIW) ukucoca iiwafers. Iindlela ezimbini eziphambili zisetyenziswa:

• Indlela yokuntywilisela: ii-wafers zintywiliselwa kwiitanki ezizaliswe zizinyibilikisi okanye i-DIW. Le yeyona ndlela isetyenziswa kakhulu, ingakumbi kwii-nodes zobuchwepheshe ezivuthiweyo.

• Indlela yokutshizaIzinyibilikisi okanye i-DIW zitshizwa kwii-wafers ezijikelezayo ukuze kususwe ukungcola. Nangona ukuntywiliselwa kuvumela ukucutshungulwa kwee-wafers ezininzi, ukucocwa kwesitshizi kuphatha i-wafer enye kuphela kwigumbi ngalinye kodwa kubonelela ngolawulo olungcono, okwenza ukuba ixhaphake ngakumbi kwiindawo eziphambili.

Icocwa ngokomisa

Njengoko igama lisitsho, ukucoca nge-dry cleaner kuthintela izinyibilikisi okanye i-DIW, endaweni yoko kusebenzisa iigesi okanye i-plasma ukususa izinto ezingcolisayo. Ngokutyhalela phambili kwiindawo eziphambili, ukucoca nge-dry cleaner kuya kuba yinto ebalulekileyo ngenxa yokubaukuchaneka okuphezulukunye nokusebenza kakuhle ngokuchasene nezinto eziphilayo, ii-nitrides, kunye nee-oxides. Nangona kunjalo, ifunautyalo-mali oluphezulu lwezixhobo, ukusebenza okuntsonkothileyo, kunye nolawulo olungqongqo lwenkquboEnye inzuzo kukuba ukucoca ngamanzi amdaka kunciphisa amanzi amaninzi amdaka aveliswa ziindlela ezimanzi.

Iindlela Eziqhelekileyo Zokucoca Ngokumanzi

1. Ukucoca nge-DIW (amanzi acocekileyo)

I-DIW yeyona nto isetyenziswa kakhulu ekucoceni okumanzi. Ngokungafaniyo namanzi anganyangwanga, i-DIW ayinazo phantse ii-ions eziqhubayo, ezithintela ukugqwala, ukusabela kwe-electrochemical, okanye ukuwohloka kwesixhobo. I-DIW isetyenziswa kakhulu ngeendlela ezimbini:

1. Ukucoca umphezulu we-wafer ngqo– Ngokwesiqhelo kwenziwa kwimo ye-single-wafer ngee-roller, iibrashi, okanye ii-spray nozzles ngexesha lokujikeleza kwe-wafer. Umngeni kukwakheka kwe-electrostatic charge, okunokubangela iziphene. Ukunciphisa oku, i-CO₂ (kwaye ngamanye amaxesha i-NH₃) iyanyibilikiswa kwi-DIW ukuphucula ukuqhuba ngaphandle kokungcolisa i-wafer.

2. Ukuhlamba emva kokucoca ngamakhemikhali– I-DIW isusa izisombululo zokucoca ezisele ezinokuthi zingcolise i-wafer okanye zonakalise ukusebenza kwesixhobo ukuba zishiywe phezu komhlaba.

2. Ukucoca i-HF (i-Hydrofluoric Acid)

I-HF yeyona khemikhali isebenzayo ekususeniiileya ze-oxide zendalo (SiO₂)kwii-wafers ze-silicon kwaye ilandela i-DIW ngokubaluleka. Ikwanyibilikisa iintsimbi ezinamatheleyo kwaye ithintele ukuphinda kufakwe i-oxidation. Nangona kunjalo, ukugrumba kwe-HF kunokonakalisa iindawo ze-wafer kwaye kuhlasele ngokungafunekiyo ezinye iintsimbi. Ukujongana nale micimbi, iindlela eziphuculweyo zokunciphisa i-HF, zongeze ii-oxidizer, ii-surfactants, okanye ii-complexing agents ukuphucula ukukhetha kunye nokunciphisa ungcoliseko.

3. Ukucoca kwe-SC1 (Ukucoca okuqhelekileyo 1: NH₄OH + H₂O₂ + H₂O)

I-SC1 yindlela engabizi kakhulu nesebenza kakuhle yokususaiintsalela zezinto eziphilayo, amasuntswana, kunye nezinye iintsimbi. Le ndlela idibanisa isenzo sokuxovula se-H₂O₂ kunye nesiphumo sokunyibilikisa se-NH₄OH. Ikwagxotha amasuntswana ngamandla e-electrostatic, kwaye uncedo lwe-ultrasonic/megasonic luphucula ngakumbi ukusebenza kakuhle. Nangona kunjalo, i-SC1 inokulungisa iindawo ze-wafer, ifuna ukulungiswa ngononophelo kwee-chemical ratios, ulawulo loxinzelelo lomphezulu (nge-surfactants), kunye nee-chelating agents ukuze kuthintelwe ukuphinda kubekwe isinyithi.

4. Ukucoca kwe-SC2 (Ukucoca okuqhelekileyo 2: HCl + H₂O₂ + H₂O)

I-SC2 incedisa i-SC1 ngokuyisusaizinto ezingcolisayo zesinyithiAmandla ayo okuqina okuguqula iintsimbi ezi-oxidized zibe ziityuwa okanye ii-complexes ezinyibilikayo, ezihlanjwa. Nangona i-SC1 isebenza kakuhle kwizinto eziphilayo kunye nee-particles, i-SC2 ibaluleke kakhulu ekuthinteleni ukufunxwa kwesinyithi kunye nokuqinisekisa ungcoliseko oluphantsi lwesinyithi.

5. Ukucoca i-O₃ (i-Ozone)

Ukucoca i-ozone kusetyenziswa kakhuluukususa izinto eziphilayokwayeukubulala iintsholongwane kwi-DIW. I-O₃ isebenza njenge-oxidant enamandla, kodwa inokubangela ukuphinda isuswe, ngoko ke idla ngokudityaniswa ne-HF. Ukulungiswa kobushushu kubalulekile kuba ukunyibilika kwe-O₃ emanzini kuncipha xa amaqondo obushushu ephezulu. Ngokungafaniyo nezibulali-ntsholongwane ezisekelwe kwi-chlorine (azimkelekanga kwi-semiconductor fabs), i-O₃ iyabola ibe yi-oxygen ngaphandle kokungcolisa iinkqubo ze-DIW.

6. Ukucoca i-Organic Solvent

Kwiinkqubo ezithile ezikhethekileyo, kusetyenziswa izinyibilikisi zendalo apho iindlela zokucoca eziqhelekileyo zinganelanga okanye zingafanelekanga (umz., xa kufuneka kuphetshwe ukwakheka kwe-oxide).

Isiphelo

Ukucoca iiwaferinyathelo eliphindaphindwa rhoqokwimveliso ye-semiconductor kwaye ichaphazela ngokuthe ngqo imveliso kunye nokuthembeka kwesixhobo. Ngokuhambela phambili ukuyaii-wafer ezinkulu kunye neejometri zezixhobo ezincinci, iimfuno zokucoceka komphezulu we-wafer, imeko yeekhemikhali, uburhabaxa, kunye nobukhulu be-oxide ziya ziba nzima ngakumbi.

Eli nqaku liphonononge zombini iindlela zokucoca iiwafer ezivuthiweyo neziphucukileyo, kuquka i-DIW, i-HF, i-SC1, i-SC2, i-O₃, kunye neendlela ze-organic solvent, kunye neendlela zazo, iingenelo kunye nemida.iimbono zoqoqosho kunye nokusingqongileyo, ukuphuculwa okuqhubekayo kwitekhnoloji yokucoca iiwafer kubalulekile ukuhlangabezana neemfuno zokwenziwa kwee-semiconductor eziphambili.